FMM3191DG. 2.5Gb/s GaAs Laser Driver

Transcription

1 .Gb/s Gs FMM9DG FETURES Opertion DC to. Gbit/s, NRZ Pek to Pek Output oltge, Min: (RL=0Ω) Pek nd Bis Current djustment ECL Comptible Input Single Ended or Differentil Input Single. Power Supply Bis Current Monitoring High Relible, Metl/Cermic pin Hermetic Flt Pckge MILser use only JPN FMM 9DG 9608 DESCRIPTION The FMM9DG Gs is highdt rte driver circuit designed for fiber optic trnsmitters operting t dt rtes up to.gbit/s (NRZ). The device is cpble of driving the highpower Lser Diodes. Pek nd bis currents cn be utomticlly controlled by pplying feedbck signl from n externl utomtic Power Control. This driver is used for MILser. BSOLUTE MXIMUM RTINGS (mbient Temperture T= C) Prmeter Symbol Rtings Supply oltge Input oltge Power Supply Current Pek Current Control oltge Bis Current Control oltge Storge Temperture SS 7.0 to 0 IN SS to 0 ISS 00 SS.0 to SS +. IP (RL = 0 Ω) IB SS.0 to SS +. IB Tstg to C

2 FMM9DG.Gb/s Gs ELECTRICL CHRCTERISTICS (Tc= C, SS=., RL=0Ω, t Pin) Prmeter Mximum Dt Rte Symbol Test Conditions NRZ Min.. Limit Typ. Mx. Mximum Pek Current Mximum Pek Current Mximum Bis Current Power Supply Current Rise Time Fll Time Reference oltge Output oltge IP IPDH IB ISS tr tf ref out IP=. IB=. IB=. DIN="Lo" IP=. IB=. IB=. DIN="Hi" IB=. IB=. IP=. IP=. IB=. IB=. 0% to 80% 0% to 80% Duty 0% IP=. IB=. IB=. DIN="Lo" Gb/s ps ps.0 RECOMMENDED OPERTING CONDITIONS Prmeter Symbol Test Conditions Min. Limits Typ. Mx. Supply oltge SS.6..9 High Level Input oltge IH ref = Low Level Input oltge IL ref =..7.6 Pek Current Control oltge IP SS SS+. Bis Current Control oltge IB IB SS SS+.8 Cse Temperture Tc 0 +6 C

3 .Gb/s Gs FMM9DG FMM9DG MILser Block Digrm MILser 0Ω 0Ω MOD LD SS SS D IN REF IB IP IB SS SS SS 70 Tc= C, t Pin 60 SS=. IB=. IB=. Pek Current IP[] Pek Current Control oltge IP[]

4 .Gb/s Gs FMM9DG FMM9DG Test C SS R R IP IB C C 0 9 Pulse Pttern Genertor R R 6 SS DIN REF SS IP SS SS IB IB SS R R 0dB TTN 0dB TTN Smpling Oscilloscope R R R R IB C: 0.µF : 0.068µF R: 0Ω R: 00Ω R: 0~kΩ R: 0~kΩ DG PCKGE 9.± UNIT: mm INDEX Mx 8 9.± Typ ±0. 0..± MIN MX

5 FMM9DG.Gb/s Gs For further informtion plese contct: FUJITSU COMPOUND SEMICONDUCTOR, INC. merics & R.O.W. Znker Rd. Sn Jose, C 98, U.S.. Phone: (08) 900 FX: (08) 89 FME, QDD Fujitsu Microelectronics Europe GmbH Quntum Devices Division Network House Norreys Midenhed, Berkshire SL6 FJ ed Kingdom TEL: + (0) FX: + (0) CUTION Fujitsu Compound Semiconductor Products contin gllium rsenide (Gs) which cn be hzrdous to the humn body nd the environment. For sfety, observe the following procedures: Do not put this product into the mouth. Do not lter the form of this product into gs, powder, or liquid through burning, crushing, or chemicl processing s these byproducts re dngerous to the humn body if inhled, ingested, or swllowed. Observe government lws nd compny regultions when discrding this product. This product must be discrded in ccordnce with methods specified by pplicble hzrdous wste procedures. FUJITSU QUNTUM DEICES SINGPORE PTE LTD. Hong Kong Brnch Rm. 0, Ocen Centre, Cnton Rd. Tsim Sh Tsui, Kowloon, Hong Kong TEL: FX: FUJITSU QUNTUM DEICES LIMITED Globl Business Division Globl Sles Support Deprtment Shinjuku Diichiseimei Building, 7 Nishishinjuku, Shinjukuku, Tokyo, 607, Jpn TEL: +86 FX: +898 Fujitsu Limited reserves the right to chnge products nd specifictions without notice. The informtion does not convey ny license under rights of Fujitsu Limited or others. 000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.. FCSI000M00