Between elements measure. Active area (per 1 element)

Transcription

1 16, 35, 46 element Si photodiode rry for UV to NIR re Si photodiode liner rry mounted in cermic DIPs (Dul Inline Pckges). These photodiode rrys re primrily developed for low-light-level detection such s spectrophotometry, nd cover wide spectrl rnge from UV to ner infrred light. Since ll elements cn be used with reverse bis for chrge storge redout, re ble to detect low level light with high sensitivity. Cross-tlk between elements is minimized to mintin signl purity. Specil filters cn be ttched s the input window (custom order products). Fetures Lrge ctive re Low cross-tlk S4111 series: Enhnced infrred sensitivity, low drk current S4114 series: IR sensitivity suppressed type, low terminl cpcitnce, high-speed response Applictions Multichnnel spectrophotometers Color nlyzers Light spectrum nlyzers Light position detection Generl rtings / Absolute mximum rtings Type No Window mteril Pckge Active re (per 1 element) Size (mm) Between elements mesure Between elements pitch Number of elements (mm) S R Resin potting S Q 18 pin DIP S Q 40 pin DIP S Q Qurtz 48 pin DIP S Q 40 pin DIP 35 S Q 48 pin DIP 46 Absolute mximum rtings Operting temperture Topr Reverse voltge VR mx Storge temperture Tstg Effective re (mm 2 ) (mm) (mm) (V) ( C) ( C) to to +80 Note: Absolute mximum rtings re the vlues tht must not be exceeded t ny time. If even one of the bsolute mximum rtings is exceeded even for moment, the product qulity my be impired. Alwys be sure to use the product within the bsolute mximum rtings. Electricl nd opticl chrcteristics (Typ. T=25 C, per 1 element, unless otherwise noted) Type No. Spectrl response rnge λ Pek sensitivity wvelength λp Photo sensitivity S Drk current ID Mx. Shunt resistnce Rsh VR=10 mv Terminl cpcitnce Ct Rise time tr RL=1 kω λ=655 nm λp 200 nm 633 nm VR=10 mv VR=10 V Min Typ. VR=0 V VR=10 V VR=0 V VR=10 V VR=0 V VR=10 V (nm) (nm) (A/W) (A/W) (A/W) (pa) (pa) (GΩ) (GΩ) (pf) (pf) (μs) (μs) (W/Hz 1/2 ) (W/Hz 1/2 ) S R 340 to S Q S Q 190 to S Q S Q 190 to S Q -15 NEP λ=λp 1

2 Spectrl response Photo sensitivity temperture chrcteristics 0.8 (Typ. T=25 C) +1.4 (Typ.) Photo sensitivity (A/W) S R S4114 SERIES S Q/-35Q/-46Q Temperture coefficient (%/ C) S4114 SERIES S4111 SERIES Wvelength (nm) KMPDB0112EB Wvelength (nm) KMPDB0113EA Drk current vs. reverse voltge Terminl cpcitnce vs. reverse voltge 100 pa S Q/-46Q (Typ. T=25 C) 1 nf (Typ. T=25 C) Drk current 10 pa 1 pa 100 fa S Q/-46Q S Q/-16R Terminl cpcitnce 100 pf S Q/-16R S Q/-46Q S Q/-46Q 10 fa Reverse voltge (V) KMPDB0114EA 10 pf Reverse voltge (V) KMPDB0115EA 2

3 Exmple of cross-tlk S4111 series (T=25 C, λ=655 mm, VR=0 V) S4114 series (T=25 C, λ=655 mm, VR=0 V) Reltive sensitivity (%) 10 1 Reltive sensitivity (%) Light position on ctive re (500 µm/div.) KMPDB0015EA Light position on ctive re (500 µm/div.) KMPDB0018EB Dimensionl outline (unit: mm) S R S Q ± ± ch 1 Active re 15.9 ch ± ± ± ± 0.3 ch 1 Active re ch ± ± ± ± Index mrk Index mrk 8 9 Resin 0.9 ± ± Qurtz window 0.9 ± ± 0.3 P 8 = P 8 = KMPDA0136EB KMPDA0135EB 3

4 S Q, S Q S Q, S Q 4.4 ch ± 0.6 Active re Pin no Qurtz window P 19 = ch ± ± 15.5 ± 0.3 Type No ± * S Q 1.45 S Q ch ± 0.8 Active re Index mrk Qurtz window P 23 = ch ± 3.0 ± ± 0.3 Type No. S Q 1.65 Detils of elements (for ll types) ± * S Q 1.55 KMPDA0019ED KMPDA0021ED b c S Q/16R S Q/46Q S Q/46Q c b c KMPDA0112EA 4

5 Pin connections Pin No. 16-element 35-element 46-element type type type 1 KC KC KC KC NC NC KC KC NC Operting circuits In the most generlly used circuit, opertionl mplifiers re con-nected to ech chnnel to red the output in rel time. The output of n opertionl mplifier is of low impednce nd thus cn be esily multiplexed. PHOTODIODE ARRAY MULTIPLEXER In the chrge storge redout method, the chrge stored in the junction cpcitnce of ech chnnel, which is proportionl to the incident light intensity, cn be red out in sequence by multiplexer. With this method, reverse voltge must be pplied to the photodiodes, so S4111 nd S4114 series re suitble. One mplifier is sufficient but cre should be tken regrding noise, dynmic rnge, etc. BIAS PHOTODIODE ARRAY ADDRESS MULTIPLEXER KMPDC0001EA KMPDC0002EA HAMAMATSU lso provides the C9004 driver circuit for Si photodiode rrys, tht llows direct mounting of the S Q/R on the circuit bord. 5

6 Informtion described in this mteril is current s of October, Product specifictions re subject to chnge without prior notice due to improvements or other resons. Before ssembly into finl products, plese contct us for the delivery specifiction sheet to check the ltest informtion. Type numbers of products listed in the delivery specifiction sheets or supplied s smples my hve suffix "(X)" which mens preliminry specifictions or suffix "(Z)" which mens developmentl specifictions. The product wrrnty is vlid for one yer fter delivery nd is limited to product repir or replcement for defects discovered nd reported to us within tht one yer period. However, even if within the wrrnty period we ccept bsolutely no libility for ny loss cused by nturl dissters or improper product use. Copying or reprinting the contents described in this mteril in whole or in prt is prohibited without our prior permission. HAMAMATSU PHOTONICS K.K., Solid Stte Division Ichino-cho, Higshi-ku, Hmmtsu City, Jpn, Telephone: (81) , Fx: (81) U.S.A.: Hmmtsu Corportion: 360 Foothill Rod, P.O.Box 6910, Bridgewter, N.J , U.S.A., Telephone: (1) , Fx: (1) Germny: Hmmtsu Photonics Deutschlnd GmbH: Arzbergerstr. 10, D Herrsching m Ammersee, Germny, Telephone: (49) , Fx: (49) Frnce: Hmmtsu Photonics Frnce S.A.R.L.: 19, Rue du Sule Trpu, Prc du Moulin de Mssy, Mssy Cedex, Frnce, Telephone: 33-(1) , Fx: 33-(1) United Kingdom: Hmmtsu Photonics UK Limited: 2 Howrd Court, 10 Tewin Rod, Welwyn Grden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) , Fx: (44) North Europe: Hmmtsu Photonics Norden AB: Smidesvägen 12, SE Soln, Sweden, Telephone: (46) , Fx: (46) Itly: Hmmtsu Photonics Itli S.R.L.: Strd dell Moi, 1 int. 6, Arese, (Milno), Itly, Telephone: (39) , Fx: (39) Ct. No. KMPD1002E07 Oct DN