3DS-IC North America TC Chapter Meeting Summary and Minutes

Transcription

1 3DS-IC Nrth America TC Chapter Meeting Summary and Minutes SEMICON West 2017 Standards Meetings Wednesday, July 12, 15:00 17:00 Marritt Marquis Htel, San Francisc, Califrnia TC Chapter Annuncements Next TC Chapter Meeting NA Standards Fall Meetings 2017 Tuesday, Nvember 7, 15:00 17:00 SEMI Headquarters, Milpitas, Califrnia Table 1 Meeting Attendees Italics indicate virtual participants C-Chairs: Richard Allen (NIST), Chris Mre (Frntier Semicnductr), Sesh Ramaswami (Applied Materials) SEMI Staff: Laura Nguyen Cmpany Last First Cmpany Last First Asahi Glass Takahashi Mark NIST Allen Richard Asahi Glass Yichir Sat Slberg Technical Cnsulting Slberg Vern BW & Assciates / ITRI Wu Bevan SuperSight Perrts Len Cimetrix Francis David Unily SC Guillu Yann Flagship Internatinal Ltd. Tuan Andy T. F. SEMI Japan Yanagisawa Chie King Tuan Electrnics C., Ltd. Chen Wendy SEMI Taiwan Chang Dean Micrn Hacker Jn SEMI Aman James NIST Obeng Yaw SEMI Nguyen Laura Table 2 Leadership Changes Nne Table 3 Cmmittee Structure Changes The prpsal t transfrm the 3DS-IC and Assembly & Packaging Cmmittees int a single, unified glbal technical cmmittee (GTC) was apprved at the Internatinal Standards Cmmittee (ISC) meeting held n July 13, 2017 during SEMICON West. Prpsal Details: T transfrm the 3DS-IC GTC and the Assembly & Packaging GTC int a unified GTC T name the transfrmed GTCs as "3D Packaging and Integratin" GTC Each TC chapter f the unified GTC will inherit the c-chairs f the existing TC chapters Previus WG/TF/SC Name (NA Chapter) 3DS-IC Bnded Wafer Stacks TF 3DS-IC Inspectin and Metrlgy TF New WG/TF/SC Name (NA Chapter) 3DP&I Bnded Wafer Stacks TF 3DP&I Inspectin and Metrlgy TF 3DS-IC NA TC Chapter 1 Wednesday, July 12, 2017 San Francisc, Califrnia/USA

2 Table 4 Ballt Results Dcument # Dcument Title Cmmittee Actin 5822A New Standard, Specificatin fr Reference Material fr Bnded Wafer Stack Vid Metrlgy 6179 Reapprval f SEMI 3D1-0912, Terminlgy fr Thrugh Silicn via Gemetrical Metrlgy #1 Passed ballts and line items will be submitted t the ISC Audit & Review Subcmmittee fr prcedural review. #2 Failed ballts and line items were returned t the riginating task frces fr re-wrk and re-ballting r abandning. Passed, with editrial changes Passed, as ballted Table 5 Activities Apprved by the GCS between meetings f the TC Chapter Nne Table 6 Authrized Activities Listing f all revised r new SNARF(s) apprved by the Originating TC Chapter. Nne #1 SNARFs and TFOFs are available fr review n the SEMI Web site at: Table 7 Authrized Ballts Nne Table 8 SNARF(s) Granted a One-Year Extensin Nne Table 9 SNARF(s) Ablished Nne Table 10 Standard(s) t receive Inactive Status Nne Table 11 New Actin Items Item # Assigned t Details 2017July#01 Laura Nguyen, Rich Allen Wrk with Cristina Chu t create survey, launch and have prpsal/presentatin at Fall meetings. Table 12 Previus Meeting Actin Items Item # Assigned t Details 2017April#03 Rich Allen T cntact Victr Vartanian (pending) and David Read (n) t see if they are still interesting f being TF leader. Onging. 2017April#02 Junk Cllins T set up recurring meetings between NA and Japan every tw weeks t discuss the details f the charter prpsal and ptentially have a final prpsal t present at SEMICON West. CLOSED. 3DS-IC NA TC Chapter 2 Wednesday, July 12, 2017 San Francisc, Califrnia/USA

3 1 Welcme, Reminders, and Intrductins Richard Allen (NIST) called the meeting t rder at 15:10. The meeting reminders n antitrust issues, intellectual prperty issues and hlding meetings with internatinal attendance were reviewed. Attendees intrduced themselves. SEMI Standards Required Meeting Elements 2 Review f Previus The TC Chapter reviewed the minutes f the previus meeting. Mtin: By / 2 nd : Discussin: Vte: T accept the previus meeting minutes as written. Steve Martell (Snscan) / Vern Slberg (Slberg Technical Cnsulting) Nne. 8-0 in favr. Mtin passed. [2017Spring] 3DS-IC Minutes FINAL 3 Liaisn Reprts 3.1 3DS-IC Japan TC Chapter Laura Nguyen (SEMI) reprted fr the 3DS-IC Japan TC Chapter. Of nte: Cmmittee Cchairs: Masahir Tsuriya (inemi), Haru Shimamt (AIST) Organizatin Chart {See attachment fr Figure} Meeting Infrmatin Last meeting Japan Summer 2017 Meetings: Mnday, June 19, 2017 at SEMI Japan ffice, Tky Next meeting Japan Fall 2017 Meetings: Wednesday, September 13, 2017 at SEMI Japan ffice, Tky TF / SG Updates: Steering Grup Charter Leadership: Masahir Tsuriya/ inemi, Eiji Yshin / Hitachi High-Technlgies, Haru Shimamt / AIST Define the wrk areas and review the glbal TC charter Prvide the fllwing inputs and pprtunities; Plan technical wrkshp t prmte the latest technlgies and market trends n the 3DIC/SiP. Brainstrm the areas f ptential taskfrce activities, and recmmend the taskfrce team frmatin t the Technical Cmmittee Handle any type f 3 dimensinal IC package technlgies including fan-ut wafer level package r integrated SiP. Prvide the cmmunicatin link frm all layer f supply chain in Japan. Interact with Nrth America and Taiwan Technlgy Cmmittee fr the jint prgrams planning. Tpics Review the current charter as t expand the scpe t cver the advanced package technlgies (i.e. add FO-WLP), and plan t initiate discussin with ther reginal TC. Wrkshps fr 3DS-IC Standardizatin 3DS-IC NA TC Chapter 3 Wednesday, July 12, 2017 San Francisc, Califrnia/USA

4 1 st Wrkshp Held n Sept. 7, 2015 at SEMI Japan ffice / Mre than 60 attendees Yle, ITRI, Tky Seimitsu and Tray Engineering made presentatins 2 nd Wrkshp Held n January 12, 2016 at SEMI Japan ffice / Mre than 60 attendees Yle, Otsuka Electrnics and Hitachi Chemical made presentatins 3 rd Wrkshp Held n June 6, 2016 at SEMI Japan ffice / Mre than 60 attendees Fukuka IST, Thku University and Tray Engineering made presentatins 4 th Wrkshp Held n June 19, 2017 at SEMI Japan ffice / Mre than 60 attendees Tshiba, Hitachi Autmtive Systems, PETRA made presentatins Other 3DS-IC related activities in Japan Thin Chip Handling Task Frce under Assembly & Packaging Japan TC Chapter New Standard: SPECIFICATION FOR ADHESIVE TRAY USED FOR THIN CHIP HANDLING Dc was published as SEMI G in January 2016 Ballt 6028 (Line Item Revisin t SEMI G ) was published as SEMI G in June Dc. 5836: New Standard: TEST METHOD FOR ADHESIVE STRENGTH FOR ADHESIVE TRAY USED FOR THIN CHIP HANDLING Ballt draft t be prepared Staff Cntact: Chie Yanagisawa (cyanagisawa@semi.rg) _JA_3DS-IC_Liaisn_v DS-IC Taiwan TC Chapter Laura Nguyen (SEMI) reprted fr the 3DS-IC Taiwan TC Chapter. Of nte: Leadership Cmmittee cchairs: Wendy Chen (King Yuan Electrnics), Rger Hwang (ASE), Chien-Chung Lin (ITRI) Organizatin Chart {See attachment fr Figure} Meeting Infrmatin Previus meeting 14:20-15:30, June 29, 2017, SEMI ffice, Hsinchu, Taiwan Next meeting 14:30-16:00, September 29, 2017, SEMI ffice, Hsinchu, Taiwan 3DS-IC Standard Cmmittee Highlights Prpsed SEMI 3DS-IC TC and Assembly & Packaging TC Integratin t new TC name as 3D packaging and Integratin TC. The draft f Dc#5800 New Standard: Guide fr Wafer Edge Trimming fr 3DS-IC Prcess will be cmpleted befre next TC meeting. Prpsed t frm the new TF Fan-ut TF in the next TC 3DS-IC NA TC Chapter 4 Wednesday, July 12, 2017 San Francisc, Califrnia/USA

5 Staff Cntact: Dean Chang Taiwan 3DS-IC Standards Cmmittee Liaisn Reprt June SEMI Staff Reprt Laura Nguyen (SEMI) gave the SEMI Staff Reprt. Of nte: SEMI Glbal 2017 Calendar f Events SEMICON West (July 11-13, 2017, San Francisc, Califrnia) SEMICON Taiwan (September 13-15, 2017; Taipei, Taiwan) PV Taiwan (Octber 12-14, 2017; Taipei, Taiwan) SEMICON Eurpa (Nvember 14-17, 2017; Munich, Germany) SEMICON Japan (December 13-15, 2017; Tky, Japan) Upcming Nrth America Standards Meetings NA Standards Fall 2017 Meetings (Nvember 6-9 [tentative], SEMI HQ in Milpitas, Califrnia) NA Standards Spring 2018 Meetings (April 2-5, 2018 [tentative], SEMI HQ in Milpitas, Califrnia) SEMICON West 2018 (July 9-12, 2017, San Francisc, Califrnia) Letter Ballt Critical Dates fr 2017 Fall 2017 adjudicatin Cycle 6: ballt submissin due: Jul 21/Vting Perid: Aug 1 Aug 31 Cycle 7: ballt submissin due: Aug 18/Vting Perid: Sep 1 Oct 2 Critical Dates 2017; Standards Publicatins Reprt Cycle New Revised Reapprved Withdrawn March April May June Ttal in prtfli 974 (includes 191 Inactive Standards) GTC Charter & Scpe Review Prblem Statement Majrity f GTCs have defined charter but many dn t have distinct Scpe It is stipulated in the Regulatins that each GTC ught t have a distinct charter and scpe. (See Regulatins , 6.2) As charter is ften very generic (e.g., The XXXGTC discusses and creates cnsensusbased specificatins and guides that prmte mutual understanding and imprved cmmunicatin between users and suppliers f XXXX), it may nt be useful t decide if the TF is within the scpe f GTC r judge if a technical area prpsal fr installatin f new GTC is really new. Status as f tday {See attachment fr chart} SEMI Website publishes charter f GTC 3DS-IC NA TC Chapter 5 Wednesday, July 12, 2017 San Francisc, Califrnia/USA

6 3DS-IC GTC Only a cuple f GTCs clearly define scpe while mst f them define its Standards scpes r at least include scpe descriptin in its charter. Current Charter T explre, evaluate, discuss, and create cnsensus-based specificatins, guidelines, and practices that, thrugh vluntary cmpliance, will; prmte mutual understanding and imprved cmmunicatin between users and suppliers f 3DS-IC materials, carriers, equipment, autmatin systems and devices enhance the manufacturing efficiency, capability and shrten 3DS-IC time-t-market reduce manufacturing cst in the 3D-IC industry. Current Scpe Undefined Requirements/Prcess Reminders fr TC Chapter Meetings Standards Dcument Develpment Prject Perid Prject perid shall nt exceed 3 years (Regs 8.3.2) SNARF apprval t TC Chapter apprval If dcument develpment activity is fund t be cntinuing, but cannt cmpleted with the prject perid, TC Chapter may grant ne-year extensin at a time, as many times as necessary. The TC Chapter shuld review the expiratin dates fr all applicable SNARFs at each TC Chapter meeting. (PM Nte 10) SNARF Review Perid A submitted SNARF fr a new, r fr a majr revisin t an existing, Standard r Safety Guideline is made available t all members f a TC Chapter s parent glbal technical cmmittee fr tw weeks fr their review and cmment. (Regs 8.2.1) If the SNARF is submitted at a TC Chapter meeting, the cmmittee can review and apprve, but the SNARF will need t be distributed fr tw weeks and then apprved via GCS. SNARF & TFOF Frm: {See attachment fr frms} Prcedures fr Crrecting Nncnfrming Titles f Published Standards Dcument (PM Appendix 4) Sme Standards qualify fr a special prcedure where a line item change can be used t crrect the titles. Otherwise, the crrective actin will likely require a majr revisin. Use f PIP frm is allwed t crrect title if all f the fllwing cnditins are met: Nncnfrming Titles {Nne} Standards having nly ne Subtype Changes either Specificatins t Specificatin r Test Methds t Test Methd N cncmitant text change is required Apprved by at least ne c-chair f the TC Chapter Example: SEMI F , Test Methds fr Transprt and Shck Testing f Gas Delivery Systems 3DS-IC NA TC Chapter 6 Wednesday, July 12, 2017 San Francisc, Califrnia/USA

7 Five-Year Review Actin by Spring 2018 SEMI 3D3-0613, Guide fr Multiwafer Transprt and Strage Cntainers fr 300 mm, Thin Silicn Wafers n Tape Frames SNARF 3 Year Status, TC Chapter may grant a ne-year extensin Dc. 5173: New Standard, Guide fr Describing Silicn Wafers fr Use in a 300 mm 3DS-IC Wafer Stack SNARF was apprved n 3/29/2011 One-year extensin granted in Spring 2017 Actin needed by Spring 2018 [2017West] Staff Reprt 3DS-IC 4 Ballt Review NOTE 1: TC Chapter adjudicatin n ballts reviewed is detailed in the Audits & Review (A&R) Subcmmittee Frms fr prcedural review. The A&R frms are available as attachments t these minutes. The attachment number fr each ballted dcument is prvided under each ballt review sectin belw. 4.1 Dcument # 5822A, New Standard, Specificatin fr Reference Material fr Bnded Wafer Stack Vid Metrlgy The ballt passed TC Chapter review with editrial changes. See attachment fr ballt adjudicatin. 5822APrceduralReview 4.2 Dcument # 6179, Reapprval f SEMI 3D1-0912, Terminlgy fr Thrugh Silicn via Gemetrical Metrlgy The ballt passed TC Chapter review as ballted. See attachment fr ballt adjudicatin. 6179Prcedural Review 5 Subcmmittee and Task Frce Reprts 5.1 3DS-IC Inspectin and Metrlgy Task Frce Rich Allen (NIST) reprted fr this task frce. This reprt cntained infrmatin n ballt results, pen SNARFs, IPC and JEDEC Liaisn reprts and brief discussin n the merger f the 3DS-IC GTC and Assembly and Packaging GTC. Ballt Review {See sectin 4 f these minutes fr Ballt results} Dc. 5822A, New Standard: Specificatin fr Reference Material fr Bnded Wafer Stack Vid Metrlgy. Dc 6179, reapprval f SEMI 3D1, TERMINOLOGY FOR THROUGH SILICON VIA GEOMETRICAL METROLOGY See ntes in ballt results dcument. Open SNARFs Dcument 5976 New Standard: Terminlgy fr 3DS-IC Technlgy Dcument 6175 New Standard, Guide n Measurements f Openings and Vias in Glass 3DS-IC NA TC Chapter 7 Wednesday, July 12, 2017 San Francisc, Califrnia/USA

8 Reprt frm Activity leader Ilna Schmidt: Here I have t admit that nt much prgress was made. Hwever, we fund that we need t address an additinal issue mre imprtantly: It s abut accuracy f the alignment, when we measure the crdinates f an array f TGVs n a panel r wafer. Here, we have started t wrk a test prcedure, and we wuld have smething t circulate r present fr discussins fairly sn. The questin is whether t incrprate this int 6175 r have a separate dcument. Or address this in the guide and have a test methd extra? I als was wndering whether TSV wuld nt have the same issue, but 3D5 seems nt t address this issue at all. IPC Liaisn reprt (IPC 7091) This dcument, which is a general verall dcument n 3D, has been published. JEDEC Liaisn reprt (JEP 158) Currently being wrked n in JEDEC as a revisin Discussin n merger f 3DS-IC GTC and Assembly and Packaging GTC Will review during TC Chapter meeting [Ballt Results] Cycle DS-IC_during meeting I&M Minutes 5.2 3DS-IC Bnded Wafer Stacks Task Frce Rich Allen (NIST) reprted fr this task frce. This reprt cntained infrmatin n pened SNARFs and a brief discussin n the tpic abut panel scale fan-ut. Open SNARFs Dcument 5173 New Standard: Guide fr Describing Silicn Wafers fr Use in a 300 mm 3DS-IC Wafer Stack Dcument 6075 New Standard: Guide fr Describing Glass-Based Material fr Use in 3DS-IC Prcess (frmer 5692) Reprt frm Activity leader Ilna Schmidt: I will circulate this dcument the next weeks fr cmments t get apprval t ballt at Fall meeting. Dcument 6076 New Standard: Specificatin fr Identificatin and Marking fr Bnded Wafer Stacks (frmer 5174) Discussin n Panel Scale Fan Out Cristina Chu frm TEL will be present during the TC Chapter meeting and present the prblem statement BWS Minutes 6 Old Business 6.1 Previus Actin Items Previus actin items are nted in Table 12 in red and fr recent updates in blue. There is n further ld business. 3DS-IC NA TC Chapter 8 Wednesday, July 12, 2017 San Francisc, Califrnia/USA

9 7 New Business 7.1 Panel Scale Fan Out Discussin Rich Allen (NIST) intrduced Cristina Chu (TEL) wh addressed the cmmittee n this tpic. (Cristina Chu) I am part f Tky Electrn; we are an equipment supplier, in the Bstn area that builds tls that are fcused n tls in advanced packaging. I am chair f the Nrth East cmmittee fr SEMI in the Bstn area and when I raised that t the members we have, they suggested I cme t this meeting and share this cncern. Prblem Statement (C.C.): A lt f interest frm different custmers fr plating and sputtering tls fr advanced packaging frm the far back f the line. There are many different many sizes f wafers r ther substrates that we either plate r sputter. Recently we ve seen a lt f interest n plating r sputtering f panels, but we have seen a great deal f variatin in the material itself and in the size f the material. S the sizes range frm 400 mm x 500 mm t 600 mm x 600 mm. Much f the demand is fr panels with dimensins in the range f 500, 510, and 515 mm. Discussin: (C.C) We ve seen this fr glass, epxy, and a series f different substrate types, but there really has been a lack f standardizatin in terms f sizes f the substrate. A standardize substrate size wuld be extrardinarily useful. (S.M.) I think we wuld have t start with certain size f the panel, dn t think we can standardize materials but size we can. (C.C.) That wuld be ideal. (S.M.) Next thing we wuld lk at is, des it fit within ne f ur task frces? Or wuld we have t create a new ne? We ll have t put a survey ut there and see what the industry leans tward. Start with a list f questins and g frm there. Next steps: Cristina and Rich will wrk will Laura and James at SEMI t prduce a survey and present results and pssible TFOF at Fall 2017 meetings. Actin Item: 2017July#01, Laura and Rich t wrk with Cristina Chu t create survey, launch and have prpsal/presentatin at Fall 2017 meetings 7.2 3DS-IC Charter Prpsal Update Rich Allen (NIST) presented t the cmmittee n this tpic. Of nte, cntents f the presentatin: Transfrming existing 3DS-IC GTC and Assembly & Packaging GTC int a unified GTC Ratinale As semicnductr packaging and integratin technlgies evlve, standards fr these new technlgies culd fit int either the wrk area f 3DS-IC TC r the wrk area f the Assembly & Packaging TC. Emerging packaging technlgies require 3D stacking IC technlgies, including thrugh-silicn via (TSV), as well as extended packaging technlgies These new innvated semicnductr packaging technlgies are difficult t clearly be categrized based n technlgy basis. This mve cause verlapping the wrk areas amng 3DS-IC TC and Assembly & Packaging TC One example is plans by bth technical cmmittees t expand their wrk area int: Fan-Out Wafer Level Packages Current Charters f Assembly & Packaging GTC and 3DS-IC GTC {please see attachment fr details} 3DS-IC NA TC Chapter 9 Wednesday, July 12, 2017 San Francisc, Califrnia/USA

10 Summary f Existing Glbal Technical Cmmittees {please see attachment fr graph} 3DS-IC TC Chapters exist in Nrth America, Japan, and Taiwan Ttal membership: 117, Overlapping membership: 49 Japan TC chapter frmed ut f Study Grup The participating membership f this TC chapter is mstly cmprised f the participating membership f the A&P TC Chapter Number f existing current standards, 16 standards, all current Assembly and Packaging TC Chapter nly in Japan Ttal membership: 103, Overlapping membership: 49 Number f existing standards 97 standards, f which, Apprximately 60 are current Mst f remainder are inactive, A few withdrawn Cmmn Interests f bth Glbal Technical Cmmittees Cmmnality f Members and Cmpanies Participating n Bth 29 f cmmn members Cmmnality f Technical Areas Wafer Thinning & Handling Wafer/Die Stacking and Intercnnectin Technlgy Emerging packaging technlgies, including Fan-Out Wafer Level Packaging and Panel Level Packaging Packaging Media fr Wafers (w/, w/ stacked) and chips (w/, w/ stacked) Current Overlap f Charter and Scpe Terminlgy f Advanced Packaging Packaging Material, Packaging Equipment and Packing Materials Prpsal t transfrm existing 3DS-IC GTC and Assembly & Packaging GTC int a Unified GTC\ 1. T transfrm the 3DS-IC GTC and the Assembly & Packaging GTC int a Unified GTC 2. T name the transfrmed GTCs as 3D Packaging and Integratin GTC 3. Each TC chapter f the unified GTC will inherit the c-chairs f the existing TC chapters Prpsed new Charter and Scpe: 3D Packaging & Integratin GTC Charter T explre, evaluate, discuss, and create cnsensus-based specificatins, guidelines, test methds, and practices that, thrugh vluntary cmpliance, will: include the materials, piece parts, and intercnnectin schemes, and unique packaging assemblies that prvide fr the cmmunicatin link between the semicnductr chip and the next level f integratin, either single- r multi-chip cnfiguratins. It relates t the technlgies fr hetergeneus and ther multi-chip packaging such as Fan-ut/Fan-in Wafer Level Packaging, Panel Level Packaging, Three-Dimensinal Stacking IC, device embedded packaging, flexible electrnics technlgy 3DS-IC NA TC Chapter 10 Wednesday, July 12, 2017 San Francisc, Califrnia/USA

11 prmte mutual understanding and imprved cmmunicatin between users and suppliers, equipment, autmatin systems, devices, and services enhance the manufacturing efficiency, capability and shrten time-t-market and reduce manufacturing cst Scpe The 3D Packaging and Integratin Cmmittee develps standards fr semicnductr devices, including prcessed wafers, chips, r multi-chip cnfiguratins t the next level f integratin, either in single- r multi-chip cnfiguratins materials needed fr 3D applicatins, including prime silicn and glass wafers, temprary and permanent bnding material, specificatins needed fr prcessed wafers and/r chips t enter an integratin step, etc. the materials related t the elements f, intercnnectin schemes, and unique packaging assemblies that prvide fr the cmmunicatin link between device and packaging the technlgies fr hetergeneus and ther multi-chip packaging such as Fan-ut/Fan-in Wafer Level Packaging, Panel Level Packaging, Three-Dimensinal Stacking IC, device embedded packaging, and flexible electrnics technlgy metrlgies t supprt these 3D integratin and packaging technlgies Prpsal f 3DS_AP Integratin- rev.8a 7.3 TEM Grid Survey Presentatin Try Mrrisn (Therm Fisher Scientific) presented t the cmmittee n this tpic t see if this falls within the charter and scpe t want t be included as an intercmmittee ballt. Ratinale: TEM metrlgy and analysis, frm LAB t FAB Semicnductr Industry metrlgy needs: TEM demand expldes t meet 3D transistr and multiple patterning challenges Faster TEM data and mre TEM data: TEM transitin frm Lab t Fab TEM micrscpy needs t be fast, autmated and easy t use TEM micrscpy requires a wrkflw with different tls t: Prepare thin TEM lamellas frm full wafers, Extract TEM lamellas frm wafer, return wafers in manufacturing line, Measure TEM lamellas in TEM micrscpe TEM lamellas are munted n TEM grids and transprted n these grids between the different tls: 300 mm FIB/SEM tl, TEM micrscpe and if needed, plasma cleaner, strage units, Tday s state-f-the-art in TEM metrlgy Lamella preparatin and extractin frm full wafers is autmated Data acquisitin (TEM imaging) and TEM metrlgy is autmated But TEM grid transprt between tls is manual, using tweezers Requires peratr interventins, and has a nn-zer failure rate Is slw and nt really cmpatible with FAB peratin A fully autmated wrkflw requires autmatic TEM grid handling Like wafer handling, but unlike wafers, grids have different frm-factrs Why is standardizatin f TEM grids imprtant? Tday the industry uses 3 mm grids that have different frm factrs and d nt respect a standard fr critical dimensins. 3DS-IC NA TC Chapter 11 Wednesday, July 12, 2017 San Francisc, Califrnia/USA

12 There are several TEM grid suppliers (Ted Pella, Omniprbe, Agar, ) There are several TEM micrscpe suppliers (JEOL, Hitachi, FEI,..) Our custmers need t be able t buy FIB/SEM and TEM systems frm different suppliers (mix and match, best-in-class) cmpatibility between tls needs t be guaranteed a TEM grid shuld be cmpatible with all FIB/SEM/TEM systems Hw t standardize TEM grids? A standard fr diameter and thickness: t allw rbtics fr grid handling Edge grippers (end effectrs) f handling rbts Receptrs f grids in TEM systems A standard fr the grid frm factr: t ensure that all kind f receptrs are cmpatible A cassette fr grid transprt and grid strage Mechanical psitining and alignment f grids in cassettes, r in TEM systems, plasma cleaners, A standard fr grid material ptins: t cntrl mechanical strength (defrmatin) and TEM perfrmance (e.g. EDX spurius peaks) A SEMI Standards task frce in which IC manufacturers, TEM equipment and TEM grid suppliers define new standards tgether, enabling future develpments f mre autmated TEM wrkflw slutins that are pen rather than prprietary and industry-wide cmpatible/acceptable! Scpe f TEM grid survey TEM grid survey: the SEMI Standards Questinnaire T find answers abut hw relevant TEM grid standardizatin is fr the Semicnductr industry, direct stakehlders were invited t cmplete a simple questinnaire. The Survey was prepared by Therm Fisher Scientific and launched thrugh the SEMI Standards rganizatin. The Survey and questinnaire was launched n June 1, 2017 and feedback was cllected fr ne mnth The questinnaire was sent t varius stakehlders: IC manufacturers, SEMI Standard Prgram Members: PIC, Silicn Wafer, 3DS-IC Custmer feedback survey results Executive Summary A gd respnse was btained with all majr IC manufacturers respnding t the survey (n = 64) 90% f current TEM sample handling is dne manually and 75% f respndents wuld like t have it autmated. > 80% f respndents are in favr f having standard grids fr: Further autmatin (80%), TEM wrkflw efficiency (75%) Cmpatibility between tls used in wrkflw (70%) < 20% f respndents see drawbacks related t csts/cmpatibility > 80% f respndents are in favr f a SEMI standardizatin effrt and 60% f respndents are willing t actively cntribute t this effrt Please see attachment fr survey data. 3DS-IC NA TC Chapter 12 Wednesday, July 12, 2017 San Francisc, Califrnia/USA

13 After discussin, the cmmittee agreed that the activity shuld be based in a different TC, but that there is likely enugh interest that there shuld be liaisn with the 3DS-IC Cmmittee. TEM grid survey results_11julyreview rev1 8 Next Meeting and Adjurnment The next meeting is scheduled fr Tuesday, Nvember 7, at the SEMI Standards Nrth America Fall 2017 Meetings lcated at SEMI Headquarters in Milpitas, Califrnia. See fr the current list f events. Tentative Schedule: Tuesday, Nvember 7 13:00-14:00 3DP&I Inspectin and Metrlgy (TF) 14:00-15:00 3DP&I Bnded Wafer Stacks (TF) 15:00-17:00 3DP&I (C) Adjurnment: 16:43. Respectfully submitted by: Laura Nguyen Internatinal Standards Crdinatr SEMI Headquarters Phne: lnguyen@semi.rg Minutes tentatively apprved by: Richard Allen (NIST), C-chair Octber 11, 2017 Sesh Ramaswami (Applied Materials), C-chair <Date apprved> Chris Mre (Frntier Semicnductr), C-chair <Date apprved> Table 13 Index f Available Attachments #1 Title SEMI Standards Required Meeting Elements [2017Spring] 3DS-IC Minutes FINAL _JA_3DS-IC_Liaisn_v1 6179PrceduralReview BWS Minutes I&M Minutes Taiwan 3DS-IC Standards Cmmittee Liaisn Reprt June [Ballt Results] Cycle DS-IC_during meeting [2017West] Staff Reprt 3DS-IC 5822APrceduralReview Title Prpsal f 3DS_AP Integratin- rev.8a TEM grid survey results_11julyreview rev1 #1 Due t file size and delivery issues, attachments must be dwnladed separately. A.zip file cntaining all attachments fr these minutes is available at Fr additinal infrmatin r t btain individual attachments, please cntact Laura Nguyen at the cntact infrmatin abve. 3DS-IC NA TC Chapter 13 Wednesday, July 12, 2017 San Francisc, Califrnia/USA