NA Silicon Wafer Committee Meeting Minutes North America Standards Spring 2011 Meetings Tuesday, 29 March, 2011, 09:00 12:00

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1 NA Silicn Wafer Cmmittee Nrth America Standards Spring 2011 Meetings Tuesday, 29 March, 2011, 09:00 12:00 Intel, Next Cmmittee Meeting In cnjunctin with SEMICON West, July 11-13, 2011 in San Francisc, Califrnia Check fr the latest update. Attendees: SEMI Staff Kevin Nguyen SEMI NA C-chair Nel Pduje (SMS) Table 1 Meeting Attendees Last Name First Name Cmpany Chien Ku-Fu TSMC Gldstein Michael Intel Crpratin Gupta Dinesh STA Nakai Tetsuya SUMCO Perrts Len Silicn Slar Pduje Nel SMS Sinha Jaydeep KLA-Tencr Stver Jhn The Scatter Wrks, Inc Walden Michel SUMCO Table 2 Ballt Summary Dcument # Dcument Title Cmmittee Actin 5043 Revisin f SEMI MF , Test Methd fr Measuring Reflective Ttal Integrated Scatter Failed and return t fr reballt 5081 Reapprval f SEMI MF , Test Methds fr Cnductivity Type f Extrinsic Semicnducting Materials Passed as ballted 5082 Reapprval f SEMI MF , Test Methds fr Resistivity f Semicnductr Passed as ballted Materials 5083 Reapprval f SEMI MF , Test Methd fr Measuring Radial Resistivity Passed as ballted Variatin n Silicn Wafers 5084 Reapprval f SEMI MF , Guide fr Identificatin f Structures and Passed as ballted Cntaminants Seen n Specular Silicn Surfaces 5087 Reapprval f SEMI MF , Test Methd fr Measuring Resistivity f Passed as ballted Semicnductr Wafers r Sheet Resistance f Semicnductr Films with a Nncntact Eddy-Current Gauge 5088 Reapprval f SEMI MF , Practice fr Preparing Silicn fr Spreading Passed as ballted Resistance Measurements 5089 Reapprval f SEMI MF , Test Methd fr Measuring Crystallgraphic Passed as ballted Orientatin f Flats n Single Crystal Silicn Wafers by X-Ray Techniques 5133 Line Items Revisin f SEMI M1-0211, Specificatins fr Plished Single See belw Crystal Silicn Wafers Line Item 1 - Change reference t M77 and mdify apprpriate wrding Passed with editrial Changes Line Item 2 - Change reference f SOI Wafers Passed as ballted NA Silicn Wafer Cmmittee 1 March 29, 2011

2 Table 3 - Authrized Ballts # When SC//WG Details 5043A Cycle 3/4 Advanced Surface Inspectin 5167 Cycle 4 Advanced Wafer Gemetry Revisin f MF Test Methd fr Measuring the Reflective Ttal Integrated Scatter Revisin t SEMI M Guide Fr Specifying Gemetry Measurement Systems Fr Silicn Wafers Fr The 130-Nm T 22-Nm Technlgy Generatins Revisin f SEMI M Guide fr Specifying Silicn Annealed Wafers 5166 Cycle 3/4 Annealed Wafer 5162 Cycle 3 Test Methds Reapprval f SEMI MF Test Methd Fr Resistivity Of Silicn Bars Using A Tw-Pint Prbe 5163 Cycle 3 Test Methds Reapprval f SEMI MF Test Methd Fr Measurement Of Insulatr Thickness And Refractive Index On Silicn Substrates By Ellipsmetry 5164 Cycle 3 Test Methds Reapprval f SEMI MF Practice Fr Preparing An Optical Micrscpe Fr Dimensinal Measurements 5165 Cycle 3 Test Methds Reapprval f SEMI MF Test Methd Fr Characterizing Semicnductr Deep Levels By Transient Capacitance Techniques 5161 Cycle 3 Test Methds Reapprval f SEMI MF Test Methds Fr Measuring Cntrast Of A Linear Plarizer Table 4 Authrized Activities # Type SC//WG Details 5167 SNARF Advanced Wafer Gemetry 5166 SNARF Test Methds 5162 SNARF Test Methds 5163 SNARF Test Methds 5164 SNARF Test Methds 5165 SNARF Test Methds 5161 SNARF Test Methds OF Internatinal Revisin t SEMI M Guide Fr Specifying Gemetry Measurement Systems Fr Silicn Wafers Fr The 130-Nm T 22-Nm Technlgy Generatins (Re: ZDD s Sign Crrectin) Revisin f SEMI M Guide fr Specifying Silicn Annealed Wafers Reapprval f SEMI MF Test Methd Fr Resistivity Of Silicn Bars Using A Tw-Pint Prbe Reapprval f SEMI MF Test Methd Fr Measurement Of Insulatr Thickness And Refractive Index On Silicn Substrates By Ellipsmetry Reapprval f SEMI MF Practice Fr Preparing An Optical Micrscpe Fr Dimensinal Measurements Reapprval f SEMI MF Test Methd Fr Characterizing Semicnductr Deep Levels By Transient Capacitance Techniques Reapprval f SEMI MF Test Methds Fr Measuring Cntrast Of A Linear Plarizer Charter and scpe were revised t eliminate duplicatin with Plished Wafer 450 mm Wafer. Nte: SNARFs and OFs are available fr review n the SEMI Web site at: NA Silicn Wafer Cmmittee 2 March 29, 2011

3 Table 5 Previus Meeting Actins Items Item # Assigned t Details Status NASW- Mar Test Methd T further cnsider US , US , and JP and MF1708 and MF1723 and reprt their findings t the Silicn Wafer Cmmittee at SEMICON Cmpleted. NASW- Nv NASW- Nv Murray Bullis (Materials & Metrlgy) Tetsuya Nakai (SUMCO) West. T send an Excel list cntaining terminlgies f Silicn Wafers t Peter Wagner and Tetsuya Nakai T find an English abstract f Japanese Patent JP and send t Dinesh Gupta and Kevin Nguyen Table 6 New Actins Items Item # Assigned t Details Cmpleted. Cmpleted. NAWS- Mar Kevin Nguyen(SEMI) T send the revised Int l 450 mm Wafer OF fr GCS t apprve 1.0 Call t Order Nel Pduje called the meeting t rder and welcmed everyne wh attended. A rund f self intrductin was made. All SEMI standards meetings are subjected t SEMI Anti-Trust Reminder and Guidelines cncerning Patentable Technlgy. Nel briefly mentined that SEMI is nw wrking n prpsal fr Letter f Intent. The idea is that if a Patentable technlgy is knwn in advance. The Letter f Intent can be sent t the Patent hlder prir t the wrk f the task frce. If the patent hlder is unwilling r unable t grant licenses, this measure will save task frce s time and effrt by nt prceeding with the SNARF. SEMI Regulatins nw require all attendees t be members f SEMI standards. If nt a member, please enrll at Agenda was reviewed and prceed as shwn. 2.0 Review f Schedule fr the next meeting (SEMICON West, July 11-13, 2011) The next meeting will be in San Francisc Marritt Marquis in Califrnia n July in cnjunctin with SEMICON West Check n calendar f entry fr the latest schedule and meeting rms. Tentative schedule fr the next meeting is shwn belw. Mnday, July 11, 2011 Time Meeting Name 08:30-10:00 Int'l 450 mm Wafer () 10:00-11:00 Int l Plished Wafer () 11:00-12:00 Int l Terminlgy () 12:00-13:00 Silicn Wafer GCS (Invitatin Only) 13:00-14:00 Int'l Epi Wafer/Annealed () 14:00-18:00 Int'l Advanced Wafer Gemetry () Tuesday, July 12, 2011 Time Meeting Name 08:30-09:30 Int l Plished Wafer ()/Int l Terminlgy () 09:30-10:30 Int l Test Methds () 10:30-12:00 Int l Advanced Surface Inspectin () 13:00-17:00 Wafer Edge Prfile (STEP) Wednesday, July 13, 2011 Time Meeting Name 08:30-12:00 Silicn Wafer (C) NA Silicn Wafer Cmmittee 3 March 29, 2011

4 3.0 Review and Apprval f the Minutes frm NA Fall Standards Meeting, Nvember at Intel The meeting minutes reviewed. N changes were made. Mtin: Accept the minutes f the previus meeting as submitted By / 2 nd : Dinesh Gupta (STA)/ Mike Gldstein (Intel) Discussin: Nne Vte: Unanimus. Mtin passed Attachment 1, MinutesNASiWfr1110.pdf 4.0 Staff Reprt Reprt was given by Kevin Nguyen. The fllwing were highlighted: 2011 Events Event Name SEMICON Singapre 2011 SEMICON Russia 2011 Interslar Eurpe 2011 SEMICON West 2011 Interslar Nrth America, 2011 SEMICON Taiwan 2011 SEMICON Eurpa 2011 May 11-13, 2011 Suntec, Singapre May 31 - June 2, 2011 Mscw, Russia June 8-10, 2011 Munich, Germany Event Details July 12-14, 2011 San Francisc, Califrnia July 13-15, 2011 San Francisc, Califrnia September 7-9, 2011 Taipei, Taiwan Octber 11-13, 2011 Dresden, Germany Upcming NA Meetings Event Name Event Type Cntents NA Standards Meetings at SEMICON West 2011 NA Standards Fall 2011 Meetings July 11-14, 2011 Standards Meetings San Francisc Marritt Marquis in SF, CA Octber 24-28, 2011 (tentative) Standards Meetings SEMI Headquarters in San Jse, Califrnia Technical Ballt Critical Dates Cycle 3 (Cmmittee Meetings after May 30, 2011) Ballt Submissin Date: April 11, 2011 Vting Perid Starts: April 25, 2011 Vting Perid Ends: May 25, 2011 Cycle 4 (Cmmittee Meetings after July 4, 2011) NA Silicn Wafer Cmmittee 4 March 29, 2011

5 Ballt Submissin Date: May 16, 2011 Vting Perid Starts: May 31, 2011 Vting Perid Ends: June 30, 2011 Feb 2011 Publicatin Cycle New Standards: 7 (+2 AUX) Revised Standards: 26 Reapprved Standards: 16 Withdrawn Standards: 2 Ttal SEMI Standards in prtfli: 805 On-line Standards Prduct - SEMIViews Attachment 2, NA Staff Reprt Fall 2010 Tue-Wed.ppt 5.0 Liaisn Reprts 5.1 SEMI Japan Tetsuya Nakai (SUMCO) reprted. Highlights: Dc. 5029A, Revisin t SEMI M , with title change frm: Test Methd fr Characterizing Silicn Wafers by Gate Oxide Integrity t: Test Methd fr Time Zer Dielectric Breakdwn Characteristics f SiO2 Films fr Silicn Wafer Evaluatin Passed technical cmmittee review. Hwever, befre frwarding the ballt t the ISC A&R SC fr prcedural review, A Minrity Reprt was submitted by Murray Bullis. Minrity Reprt was frwarded t the Silicn Wafer GCS and later was fund upheld. Dc. 5029A was sent back t technical cmmittee fr further review. Int l Plished Wafers Task Frce Submissin f Dc.5090 (SEMI M1 revisin ballt regarding additin f 450 mm wafer spec. table) fr Cycle 1 was authrized at SEMICON Japan 2010, hwever, it was fund at a later stage that the ballt was abut t be submitted with the cntents different frm what was agreed upn. As a result, the ballt became pending submissin hping reaching cnsensus within the at NA Spring. Int l Terminlgy Task Frce reached cnsensus n the fllwings: SEMI M59 shuld be Terminlgy Standard by integrating all the definitins f individual standards int it. Individual standards shuld have detailed explanatin f terminlgy nly, if necessary, by creating a new sectin called Cmprehensive Explanatin f Term. als discussed the crdinated ballt prcedure between SEMI M59 and individual standards. Cntinued discussin will be held at NA Spring. Int l 450 mm Wafer Task Frce Dc.5070, Revisin t SEMI M , Specificatin fr Develpmental 450 mm Diameter Plished Single Crystal Silicn Wafers (an update t imprve edge shape design) Submitted fr Cycle 1. Vting results will be reviewed at SEMICON West Wrking n Dc.5090 in cllabratin with the Int l Plished Wafer t incrprate in a future SEMI M1 revisin a shrt table (see the Int l Plished Wafer reprt). Started discussin n Dc.5112, a lng table (generate a new specificatin detailing 450 mm plished wafer requirements fr 32 nm technlgy nde). Attachment - 3, JP_SiW_NA Spring 2011_r0.ppt 5.2 SEMI Eurpe N meeting was taken place since SEMICON Eurpa frm Octber, N new reprt was given. 6.0 Ballt Review NA Silicn Wafer Cmmittee 5 March 29, 2011

6 6.1 Dcument 5043, Revisin f SEMI MF , Test Methd fr Measuring Reflective Ttal Integrated Scatter Dcument failed technical review and was sent back t fr reballt. See attachment belw fr detail f ballt adjudicatin. Attachment 4, 5043Fail.pdf 6.2 Dcument 5081, Reapprval f SEMI MF , Test Methds fr Cnductivity Type f Extrinsic Semicnducting Materials Dcument passed technical review and frwarded t ISC Audits and Reviews Subcmmittee fr prcedural review. See attachment belw fr detail f ballt adjudicatin. Attachment 5, 5081PrcedureReview.dc 6.3 Dcument 5082, Reapprval f SEMI MF , Test Methds fr Resistivity f Semicnductr Materials Dcument passed technical review and frwarded t ISC Audits and Reviews Subcmmittee fr prcedural review. See attachment belw fr detail f ballt adjudicatin. Attachment 6, 5082PrcedureReview.dc 6.4 Dcument 5083, Reapprval f SEMI MF , Test Methd fr Measuring Radial Resistivity Variatin n Silicn Wafers Dcument passed technical review and frwarded t ISC Audits and Reviews Subcmmittee fr prcedural review. See attachment belw fr detail f ballt adjudicatin. Attachment 7, 5083PrcedureReview.dc 6.5 Dcument 5084, Reapprval f SEMI MF , Guide fr Identificatin f Structures and Cntaminants Seen n Specular Silicn Surfaces Dcument passed technical review and frwarded t ISC Audits and Reviews Subcmmittee fr prcedural review. See attachment belw fr detail f ballt adjudicatin. Attachment 8, 5084PrcedureReview.dc 6.6 Dcument 5087, Reapprval f SEMI MF , Test Methd fr Measuring Resistivity f Semicnductr Wafers r Sheet Resistance f Semicnductr Films with a Nncntact Eddy-Current Gauge Dcument passed technical review and frwarded t ISC Audits and Reviews Subcmmittee fr prcedural review. See attachment belw fr detail f ballt adjudicatin. Attachment 9, 5087PrcedureReview.dc 6.7 Dcument 5088, Reapprval f SEMI MF , Practice fr Preparing Silicn fr Spreading Resistance Measurements Dcument passed technical review and frwarded t ISC Audits and Reviews Subcmmittee fr prcedural review. See attachment belw fr detail f ballt adjudicatin. Attachment 10, 5088PrcedureReview.dc NA Silicn Wafer Cmmittee 6 March 29, 2011

7 6.8 Dcument 5089, Reapprval f SEMI MF , Test Methd fr Measuring Crystallgraphic Orientatin f Flats n Single Crystal Silicn Wafers by X-Ray Techniques Dcument passed technical review and frwarded t ISC Audits and Reviews Subcmmittee fr prcedural review. See attachment belw fr detail f ballt adjudicatin. Attachment 11, 5089PrcedureReview.dc 6.9 Dcument 5133, Line Items Revisin f SEMI M1-0211, Specificatins fr Plished Single Crystal Silicn Wafers Dcument passed technical review and frwarded t ISC Audits and Reviews Subcmmittee fr prcedural review. See attachment belw fr detail f ballt adjudicatin. Attachment 12, 5133PrcedureReview.dc 7.0 Task Frce Reprts 7.1 Specificatins Grup Int l 450 mm Wafer /Mike Gldstein (Intel) Mike reprted a preliminary review f rejects and cmments t dc. 5070, Revisin f SEMI M The fficial adjudicatin will take place at SEMICON West in July. Discussin was cntinued with agreement n the additin f dimensinal specificatin fr 450 mm plished wafer (similar t table 11) t M1 tk place Agreement was nt reached n hw t incrprate ther 450 mm specificatins int M1 r elsewhere. Discussin is still nging. Mike presented a revised Int l 450 mm Wafer Task Frce frm, where the charter and scpe were mdified. Mtin: T apprve the revised Int l 450 mm Wafer Task Frce By / 2 nd : Dinesh Gupta (STA)/Tetsuya Nakai (SUMCO) Discussin: Kevin Nguyen pinted ut that anytime when there is a revisin t an Int l Task Frce, the GCS shuld als review and make a decisin. Actin Item - Kevin will frward t the GCS fr apprval. Vte: Unanimus. Mtin passed Attachment 13, OFs fr Plished Wafer and 450 mm s dc Attachment 14, 450mm NA spring meeting 2011reprtRev1.ppt Int l Epitaxial Wafer /Dinesh Gupta (STA) Dinesh Gupta reprted the review dcument, 5035A, Line Item Revisin f SEMI M , Specificatins fr Silicn Epitaxial Wafers (Adding Table R2-8 Guide fr the Specificatin f 22 nm Design Rule Epitaxial Wafers with DSP Substrates), which will be adjudicated at the SEMICON West meeting. The ballt received ne Negative (M. Bullis). The negative pertained t the editrial crrectins that did nt affect the technical cntent. The negative was withdrawn by M. Bullis. Next meeting will be in San Francisc. Attachment 15, MinEpi0311.dc Int l Plished Wafer Task Frce/Murray Bullis (Materials & Metrlgy) Murray sent a brief meeting summary. The ballt review was cnducted fr dcument 5133, Line Items Revisin f SEMI M1-0211, Specificatins fr Plished Single Crystal Silicn Wafers. This dcument had tw cmments and n negatives. As it turns ut, the first cmment (On Line Item 1) is crrect and we need t editrially crrect the manuscript t include it. The secnd cmment (n Line Item 2) merely repeats the first cmment and des nt apply t Line Item 2. Thus the nly the single editrial change with the additinal NA Silicn Wafer Cmmittee 7 March 29, 2011

8 parenthesis clse is as fllws with yellw backgrund: Fr ff-rientatin {111} wafers, the rthgnal misrientatin may be specified (see line f Table 1, Part 2). There is n standardized measurement methd fr this prperty s it shuld be determined by a methd agreed upn between supplier and custmer. 8.2 Metrlgy Grup Int l Advanced Wafer Gemetry Task Frce/Nel Pduje (SMS) Minutes were presented by Nel Pduje. Highlights. Presentatins EUV Lithgraphy & Wafer Flatness Plishing Variatin at Ntch Larger Ntch Width fr Greater Precisin f Alignment Ballt develpment Guide fr flatness measurement f 450mm wafers Old Business Changes t M49 Jaydeep pints ut that there is an errr in the recently apprved M49 revisin related t the sign f ZDD in Table 4. The sign is given as psitive. It shuld be negative. Mtin: T apprve a SNARF fr revisin f SEMI M49 [ZDD] and send fr cycle 3 r 4 fr ballt t review in San Francisc. By / 2 nd : Dinesh Gupta (STA)/Jaydeep Sinha (KLA-Tencr) Discussin: Nne Vte: Unanimus. Mtin passed Attachment 16, M49 ERO SNARF_Negative ZDDRev1.dc New Business Fritz prpsed a STEP prgram at West related t new edge prfile standards, e.g., M73. He pints ut that they are nt widely used. He will rganize, alng with Murray and Nakai-san. Kevin will prvide the WG with histrical edge prfile STEP material. Deadline fr g r n-g decisin is April 12. Attachment -17, AWG.zip Int l Advanced Surface Inspectin Task Frce/Jhn Stver (The Scatter Wrks) Jhn reprted the fllwing actins are still ustanding within his grup, see belw. These items will be revisited at the next meeting in San Francisc. Fritz Passek and Mike Gldstein will arrange meeting between SEMI and ITRS fr alignment with respect t future requirements n wafers fr design rules < 22nm. These requirements t wafers have direct impact n future standards fr surface inspectin but als flatness measurement systems. Nt Cmpleted. Fritz Passek t send list f pssible SEMI standard participants t Mike Gldstein. Nt Cmpleted. Mike Gldstein t arrange the ITRS members. Target date is late March Nt Cmpleted. Mike Gldstein / Gerge Kren t make draft M52 by the meeting and send ut t participants. Nt Cmpleted. A ballt fr dcument 5043, Revisin f SEMI MF , Test Methd fr Measuring Reflective Ttal Integrated Scatter, received a technical reject frm Thm Germer (NIST). Jhn and Thm agreed t rewrite the dcument in time fr submissin prir t May 16 fr reviewing in San Francisc. Mtin: T apprve dc. 5043A, revisin f SEMI MF1048 fr cycle 4 fr review at West By / 2 nd : Dinesh Gupta (STA)/Jhn Stver (The Scatter Wrks) NA Silicn Wafer Cmmittee 8 March 29, 2011

9 Discussin: The revised dcument was nt presented in the cmmittee. At the very least, Nel Pduje recmmended sending the latest draft t the task frce members prir t submitting fr ballt. Vte: Unanimus. Mtin passed Attachment 18, MINUTES dc 8.3 Cmmittee Task Frces Int l Test Methds /Dinesh Gupta (STA) All previus ballts (SEMI M42, SEMI M43, SEMI M81, SEMI M154, SEMI M673, SEMI M674, SEMI M847) fr 5 year review were apprved. There are additinal test methds that need 5 year review as required by SEMI Regulatins. The fllwing 5 dcuments need cmmittee s attentin Reapprval f SEMI MF Test Methds Fr Measuring Cntrast Of A Linear Plarizer 5162 Reapprval f SEMI MF Test Methd Fr Resistivity Of Silicn Bars Using A Tw-Pint Prbe 5163 Reapprval f SEMI MF Test Methd Fr Measurement Of Insulatr Thickness And Refractive Index On Silicn Substrates By Ellipsmetry 5164 Reapprval f SEMI MF Practice Fr Preparing An Optical Micrscpe Fr Dimensinal Measurements 5165 Reapprval f SEMI MF Test Methd Fr Characterizing Semicnductr Deep Levels By Transient Capacitance Techniques Mtin: T send 5 dcuments listed abve fr reapprval ballts in cycle 3 fr review at SEMICON West By / 2 nd : Dinesh Gupta (STA)/ Mike Gldstein (Intel) Discussin: Nne Vte: 7/0. Mtin passed Attachment 19, MinTestMethdsMtg0311.dc Int l Terminlgy /Murray Bullis (Materials and Metrlgy) Nakai-san prpsed a revisin prcedure fr SEMI M59 and individual standards. These slides give a detailed utline fr future revisin f M59 and related silicn technlgy. Nakai hpes t narrw the cmmunicatin gap between internatinal members when dealing with terminlgy issues. Attachment 20, Int'l Terminlgy _ ppt 9.0 Old Business 9.1 Ptential Patents in SEMI MF1708, MF1723, and MF1724. On January 7, 2010, Peter Wagner infrmed SEMI staff that Patents US , US and JP may be ptentially materials in SEMI MF1708, MF1723, and MF1724. Base n the previus meeting at the Fall, 2010, the NA Silicn Wafer cmmittee determined and vted t find US patents US and US were nt ptentially material in SEMI MF1708, MF1723, and MF1724. Hwever, patent JP was nt determinable due t the English translatin cpy was nt available at that time. Patents US , Analytical Methd fr Particulate Silicn US , Methd fr Analyzing Irregular Shaped Chunked Silicn fr Cntaminants JP , Methd fr Analyzing Impurity f Plycrystalline Silicn Standards in Questin. NA Silicn Wafer Cmmittee 9 March 29, 2011

10 SEMI MF Practice fr Evaluatin f Granular Plysilicn by Melter-Zner Spectrscpies SEMI MF Practice fr Evaluatin f Plycrystalline Silicn Rds by Flat- Zne Crystal Grwth and Spectrscpy SEMI MF Test Methd fr Measuring Surface Metal Cntaminatin f Plycrystalline Silicn by Acid Extractin-Atmic Absrptin Spectrscpy The cmmittee asked assistance frm Tetsuya Nakai (SUMCO) t find an English abstract f Japan Patent JP and reprt back. At this meeting, March 29, 2011, Tetsuya Nakai (SUMCO) reprted that after his research, he stated that Patent JP was nt accepted by the Japanese Patent Office. Therefre, it is irrelevant t MF1708, MF1723, and MF1724. See attachment belw fr cpy. The cmmittee nw needs t reslve this utstanding issue. A mtin was made as fllwing: Mtin: T find JP appears nt t be enfrced by Japanese Patent ffice because it was nt accepted. Thus it is irrelevant t MF1708, MF1723, and MF1724. By / 2 nd : Dinesh Gupta (STA)/ Mike Gldstein (Intel) Discussin: Nne Vte: 7-0. Mtin passed. Issue is reslved. Attachment 21, JP Patent.zip 10.0 New Business 10.1 M57 Revisin Dinesh Gupta reprted SEMI M Guide fr Specifying Silicn Annealed Wafers is due fr 5 year. The dcument needs mre than a reapprval ballt. Dinesh prvided a SNARF fr revisin f SEMI M57. Mtin: T apprve M57 Revisin SNARF By / 2 nd : Dinesh Gupta (STA)/ Jhn Stver (The Scatter Wrks) Discussin: Nne Vte: Unanimus. Mtin passed Dinesh als wuld like t seek cmmittee s authrizatin fr submissin f technical ballt. Mtin: T ballt M57 revisin fr cycle 3 r 4 fr review in San Francisc By / 2 nd : Dinesh Gupta (STA)/ Mike Gldstein (Intel) Discussin: Nne Vte: Unanimus. Mtin passed Attachment 22, SnarfRevTAWGuideM rev1.dc 10.2 SEMI MF397 Withdrawal prpsal On behalf f Win Baylies and Susan Tsa, Nel Pduje relayed the message n prpsal fr Withdrawal f SEMI MF Test Methd fr Resistivity f Silicn Bars Using a Tw-pint Prbe. This Test Methd describes methd fr measuring silicn samples with a tw-pint prbe. There are currently n suppliers f tw-pint prbe equipment. Further there are n related standard reference materials. Because f this, mst f the PV Silicn wafer prducers and users in China are unable t establish crrelatin amng varius interests, accrding t GCL, a majr PV material prducer. Mtin: T reject prpsal t withdraw MF397 frm SEMI Publicatin By / 2 nd : Dinesh Gupta (STA)/ Mike Gldstein (Intel) NA Silicn Wafer Cmmittee 10 March 29, 2011

11 Discussin: Nel stated that everyne is entitled t submit a SNARF. The cmmittee shuld apprve the SNARF. A separate mtin t submit fr the ballt is als required. By then, if the dcument is fund t be valid, the cmmittee can then be rejected fr ballt. Dinesh Gupta is aware that there are at least tw cmpanies using SEMI MF397 fr tw pints prbe n the silicn bar. He stated that this standard is still valid and shuld nt be remved. Vte: 4-2. Mtin passed. This prpsal failed cmmittee. MF397 SNARF fr withdrawal was rejected Actin Item Reviews Kevin Nguyen reviewed the new actin items. These can be fund in the New Actin Items table 6 at the beginning f these minutes Adjurn The meeting was adjurned at 11:44 AM. These minutes are respectfully submitted by: Kevin Nguyen, SEMI NA Standards Cmmittee Manager Phne: knguyen@semi.rg Minutes apprved by: Nel Pduje (SMS) C-chair Date: Dinesh Gupta (STA) C-chair Date: April 18, 2011 Table 7 Index f Attachment Summary # Title Title 1 MinutesNASiWfr1110.pdf PrcedureReview.dc 2 NA Staff Reprt Fall 2010 Tue-Wed.ppt 13 OFs fr Plished Wafer and 450 mm s dc 3 JP_SiW_NA Spring 2011_r0.ppt mm NA spring meeting 2011reprtRev1.ppt Fail.pdf 15 MinEpi0311.dc PrcedureReview.dc 16 16, M49 ERO SNARF_Negative ZDDRev1.dc PrcedureReview.dc 17 AWG.zip PrcedureReview.dc 18 MINUTES dc PrcedureReview.dc 19 MinTestMethdsMtg0311.dc PrcedureReview.dc 20 Int'l Terminlgy _ ppt PrcedureReview.dc 21 JP Patent.zip PrcedureReview.dc 22 SnarfRevTAWGuideM rev1.dc #1 Due t file size and delivery issues, attachments must be dwnladed separately. A.zip file cntaining all attachments fr these minutes is available at Fr additinal infrmatin r t btain individual attachments, please cntact Kevin Nguyen at the cntact infrmatin abve NA Silicn Wafer Cmmittee 11 March 29, 2011