IGBT TRENCHSTOP TM Performancetechnology. IGW30N60TP 600VIGBTTRENCHSTOP TM Performanceseries. Datasheet. IndustrialPowerControl

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1 IGBT TRENCHSTOP TM Performanceechnology 6VIGBTTRENCHSTOP TM Performanceseries Daashee IndusrialPowerConrol

2 G C E TRENCHSTOP TM PerformanceSeries HighspeedIGBTinTrenchandFieldsopechnology Feaures: TRENCHSTOP TM echnologyoffering verylowvcesa lowurnofflosses shorailcurren lowemi maximumjuncionemperaure175 C qualifiedaccordingojedecforargeapplicaions Pbfreeleadplaing;RoHScomplian compleeproducspecrumandpspicemodels: hp:// Applicaions: drives solarinverers uninerrupiblepowersupplies convererswihmediumswichingfrequency G C E KeyPerformanceandPackageParameers Type VCE IC VCEsa,Tvj=25 C Tvjmax Marking Package 6V 3A 1.6V 175 C G3DTP PGTO2473 2

3 TableofConens Descripion Table of Conens Maximum Raings Thermal Resisance Elecrical Characerisics Elecrical Characerisics Diagrams Package Drawing Tesing Condiions Revision Hisory Disclaimer

4 MaximumRaings Foropimumlifeimeandreliabiliy,Infineonrecommendsoperaingcondiionshadonoexceed8%ofhemaximumraingssaedinhisdaashee. Parameer Symbol Value Uni Collecoremiervolage,Tvj 25 C VCE 6 V DCcollecorcurren,limiedbyTvjmax TC=25 C TC=1 C IC Pulsedcollecorcurren,plimiedbyTvjmax 1) ICpuls 9. A Turn off safe operaing area VCE 6V,Tvj 175 C,p=1µs 1) 9. A Gaeemier volage VGE ±2 V Shor circui wihsand ime VGE=15.V,VCC 4V Allowed number of shor circuis < 1 Time beween shor circuis: 1.s Tvj=15 C PowerdissipaionTC=25 C PowerdissipaionTC=1 C SC Po Operaing juncion emperaure Tvj C Sorage emperaure Tsg C Soldering emperaure, wave soldering 1.6mm (.63in.) from case for 1s 26 Mouning orque, M3 screw Maximum of mouning processes: 3 A µs W C M.6 Nm ThermalResisance Parameer Symbol Condiions Value min. yp. max. Uni RhCharacerisics IGBT hermal resisance, juncion case Rh(jc).5.75 K/W 1) Defined by design. No subjec o producion es. 4

5 ElecricalCharacerisic,aTvj=25 C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni SaicCharacerisic Collecoremier breakdown volage V(BR)CES VGE=V,IC=2.mA 6 V Collecoremier sauraion volage VCEsa VGE=15.V,IC=3.A Tvj=25 C Tvj=175 C Gaeemier hreshold volage VGE(h) IC=.48mA,VCE=VGE V Zero gae volage collecor curren ICES VCE=6V,VGE=V Tvj=25 C Tvj=175 C Gaeemier leakage curren IGES VCE=V,VGE=2V 1 na Transconducance gfs VCE=2V,IC=3.A 26. S V µa ElecricalCharacerisic,aTvj=25 C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni DynamicCharacerisic Inpu capaciance Cies 15 Oupu capaciance Coes VCE=25V,VGE=V,f=1MHz 45 Reverse ransfer capaciance Cres 36 Gae charge Inernal emier inducance measured 5mm (.197 in.) from case Shor circui collecor curren Max. 1 shor circuis Time beween shor circuis: 1.s QG VCC=48V,IC=3.A, VGE=15V pf 13. nc LE 13. nh IC(SC) VGE=15.V,VCC 4V, SC 5µs Tvj=15 C 137 A SwichingCharacerisic,InduciveLoad Parameer Symbol Condiions Value min. yp. max. Uni IGBTCharacerisic,aTvj=25 C Turnon delay ime d(on) Tvj=25 C, 15 ns Rise ime VCC=4V,IC=3.A, r 21 ns VGE=./15.V, Turnoff delay ime d(off) RG(on)=1.5Ω,RG(off)=1.5Ω, 179 ns Fall ime Lσ=32nH,Cσ=6pF f 12 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include ail and.71 mj Turnoff energy diode (IKW3N6DTP) reverse Eoff.42 mj recovery. Toal swiching energy Es 1.13 mj 5

6 SwichingCharacerisic,InduciveLoad Parameer Symbol Condiions Value min. yp. max. Uni IGBTCharacerisic,aTvj=175 C Turnon delay ime d(on) Tvj=175 C, 15 ns Rise ime VCC=4V,IC=3.A, r 23 ns VGE=./15.V, Turnoff delay ime d(off) RG(on)=1.5Ω,RG(off)=1.5Ω, 22 ns Fall ime Lσ=32nH,Cσ=6pF f 59 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include ail and.99 mj Turnoff energy diode (IKW3N6DTP) reverse Eoff.74 mj recovery. Toal swiching energy Es 1.73 mj 6

7 IC,COLLECTORCURRENT[A] 1 1 DC Po,POWERDISSIPATION[W] VCE,COLLECTOREMITTERVOLTAGE[V] Figure 1. Forwardbiassafeoperaingarea (D=,TC=25 C,Tj 175 C;VGE=15V) TC,CASETEMPERATURE[ C] Figure 2. Powerdissipaionasafuncionofcase emperaure (Tj 175 C) VGE=2V IC,COLLECTORCURRENT[A] 5 25 IC,COLLECTORCURRENT[A] V 13V 11V 9V 7V TC,CASETEMPERATURE[ C] Figure 3. Collecorcurrenasafuncionofcase emperaure (VGE 15V,Tj 175 C) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 4. Typicaloupucharacerisic (Tj=25 C) 7

8 9 8 VGE=2V 6 Tj=25 C Tj=175 C IC,COLLECTORCURRENT[A] V 13V 11V 9V 7V IC,COLLECTORCURRENT[A] VCE,COLLECTOREMITTERVOLTAGE[V] Figure 5. Typicaloupucharacerisic (Tj=175 C) VGE,GATEEMITTERVOLTAGE[V] Figure 6. Typicalransfercharacerisic (VCE=2V) VCE(sa),COLLECTOREMITTERSATURATION[V] IC=19A IC=38A IC=76A,SWITCHINGTIMES[ns] 1 1 d(off) f d(on) r Tj,JUNCTIONTEMPERATURE[ C] Figure 7. Typicalcollecoremiersauraionvolageas afuncionofjuncionemperaure (VGE=15V) IC,COLLECTORCURRENT[A] Figure 8. Typicalswichingimesasafuncionof collecorcurren (ind.load,tj=175 C,VCE=4V,VGE=15/V, rg=1.5ω,escircuiinfig.e)

9 1 d(off) f d(on) r d(off) f d(on) r,switchingtimes[ns] 1,SWITCHINGTIMES[ns] rg,gateresistor[ω] Figure 9. Typicalswichingimesasafuncionofgae resisor (ind.load,tj=175 C,VCE=4V,VGE=15/V, IC=3A,escircuiinFig.E) Tj,JUNCTIONTEMPERATURE[ C] Figure 1. Typicalswichingimesasafuncionof juncionemperaure (ind.load,vce=4v,vge=15/v,ic=3a, rg=1.5ω,escircuiinfig.e) VGE(h),GATEEMITTERTHRESHOLDVOLTAGE[V] yp. min. max. E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Es Tj,JUNCTIONTEMPERATURE[ C] Figure 11. Gaeemierhresholdvolageasafuncion ofjuncionemperaure (IC=,48mA) IC,COLLECTORCURRENT[A] Figure 12. Typicalswichingenergylossesasa funcionofcollecorcurren (ind.load,tj=175 C,VCE=4V,VGE=15/V, rg=1.5ω,escircuiinfig.e)

10 4 2. Eoff Eon Es Eoff Eon Es E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] rg,gateresistor[ω] Figure 13. Typicalswichingenergylossesasa funcionofgaeresisor (ind.load,tj=175 C,VCE=4V,VGE=15/V, IC=3A,escircuiinFig.E) Tj,JUNCTIONTEMPERATURE[ C] Figure 14. Typicalswichingenergylossesasa funcionofjuncionemperaure (indload,vce=4v,vge=15/v,ic=3a, rg=1.5ω,escircuiinfig.e) E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Es VGE,GATEEMITTERVOLTAGE[V] V 48V VCE,COLLECTOREMITTERVOLTAGE[V] Figure 15. Typicalswichingenergylossesasa funcionofcollecoremiervolage (ind.load,tj=175 C,VGE=15/V,IC=3A, rg=1.5ω,escircuiinfig.e) QGE,GATECHARGE[nC] Figure 16. Typicalgaecharge (IC=3A)

11 25 C,CAPACITANCE[pF] 1 1 Cies Coes Cres IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] VCE,COLLECTOREMITTERVOLTAGE[V] Figure 17. Typicalcapacianceasafuncionof collecoremiervolage (VGE=V,f=1MHz) VGE,GATEEMITTERVOLTAGE[V] Figure 18. Typicalshorcircuicollecorcurrenasa funcionofgaeemiervolage (VCE 4V,saraTj=25 C) 16 SC,SHORTCIRCUITWITHSTANDTIME[µs] VGE,GATEEMITTERVOLTAGE[V] Figure 19. Shorcircuiwihsandimeasafuncionof gaeemiervolage (VCE 4V,saraTj 15 C) ZhJC,TRANSIENTTHERMALIMPEDANCE[K/W] 11.1 D= E4 1E6 1E5 1E p,pulsewidth[s] Figure 2. TypicalIGBTransienhermalimpedance (D=p/T) single pulse i: ri[k/w]: E3 τi[s]: 3.1E5 1.8E4 1.9E

12 Package Drawing PGTO

13 Tesing Condiions V GE () I,V 9% V GE di F/d rr = a + b Qrr = Qa + Qb 1% V GE a b I () C Q a Q b di 9% I C 9% I C 1% I C 1% I C Figure C. Definiion of diode swiching characerisics V CE () d(off) f d(on) r Figure A. V GE () 9% V GE Figure D. 1% V GE I () C CC 2% I C V CE () E V I off = x x d 1 2 CE C E V I on = CE x C x d % V CE Figure E. Dynamic es circui Parasiic inducance L s, parasiic capacior C s, relief capacior C r, (only for ZVT swiching) Figure B. 13

14 RevisionHisory Revision:21625,Rev.2.1 Previous Revision Revision Dae Subjecs (major changes since las revision) 2.1 Release of final daashee Publishedby InfineonTechnologiesAG 81726München,Germany InfineonTechnologiesAG216. AllRighsReserved. ImporanNoice Theinformaiongiveninhisdocumenshallinnoevenberegardedasaguaraneeofcondiionsorcharacerisics ( Beschaffenheisgaranie ).Wihrespecoanyexamples,hinsoranyypicalvaluessaedhereinand/orany informaionregardingheapplicaionofheproduc,infineontechnologiesherebydisclaimsanyandallwarraniesand liabiliiesofanykind,includingwihoulimiaionwarraniesofnoninfringemenofinellecualproperyrighsofanyhird pary. Inaddiion,anyinformaiongiveninhisdocumenissubjecocusomer scompliancewihisobligaionssaedinhis documenandanyapplicablelegalrequiremens,normsandsandardsconcerningcusomer sproducsandanyuseof heproducofinfineontechnologiesincusomer sapplicaions. Thedaaconainedinhisdocumenisexclusivelyinendedforechnicallyrainedsaff.Iisheresponsibiliyof cusomer sechnicaldeparmensoevaluaehesuiabiliyofheproducforheinendedapplicaionandhe compleenessofheproducinformaiongiveninhisdocumenwihrespecosuchapplicaion. Forfurherinformaiononheproduc,echnology,deliveryermsandcondiionsandpricespleaseconacyourneares InfineonTechnologiesoffice( PleasenoehahisproducisnoqualifiedaccordingoheAECQ1orAECQ11documensofheAuomoive ElecronicsCouncil. Warnings Dueoechnicalrequiremensproducsmayconaindangeroussubsances.Forinformaiononheypesinquesion pleaseconacyournearesinfineontechnologiesoffice. ExcepasoherwiseexplicilyapprovedbyInfineonTechnologiesinawriendocumensignedbyauhorized represenaivesofinfineontechnologies,infineontechnologies producsmaynobeusedinanyapplicaionswherea failureofheproducoranyconsequencesofheusehereofcanreasonablybeexpecedoresulinpersonalinjury. 14

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