LSIC1MO120E V N-channel, Enhancement-mode SiC MOSFET
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1 LSIC1MO120E N-channel, Enhancement-mode SiC MOSFET RoHS Pb Product Summary Characteristics alue Unit DS 1200 Typical R DS(ON) 160 mω I D ( T C 100 C) 14 A Circuit Diagram TO-247-3L Features * * Body diode Optimized for highfrequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off operation at all temperatures Ultra-low on-resistance Environmental Littelfuse RoHS logo = RoHS conform Littelfuse HF logo = Halogen Free Littelfuse Pb-free logo = Pb-free lead plating RoHS Pb Applications High-frequency applications Solar Inverters Switch Mode Power Supplies UPS Motor Drives High oltage DC/DC Converters Battery Chargers Induction Heating
2 Maximum Ratings Characteristics Symbol Conditions alue Unit Continuous Drain Current I D = 20, T C = 25 C 22 = 20, T C = 100 C 14 Pulsed Drain Current 1 I D(pulse) T C = 25 C 44 A Power Dissipation P D T C = 25 C, T J = 150 C 125 W Operating Junction Temperature T J -55 to 150 C Gate-source oltage,max Absolute maximum values -6 to 22,OP,TR Transient, <1% duty cycle -10 to 25,OP Recommended DC operating values -5 to 20 Storage Temperature T STG to 150 C Lead Temperature for Soldering T sold C Mounting Torque M D M3 or 6-32 screw Footnote 1: Pulse width limited by T J,max A 0.6 Nm 5.3 in-lb Thermal Characteristics Characteristics Symbol alue Unit Maximum Thermal Resistance, junction-to-case R th,jc,max 1.0 C/W Maximum Thermal Resistance, junction-to-ambient R th,ja,max 40 C/W Electrical Characteristics (T J = 25 C unless otherwise specified) Characteristics Symbol Conditions Min Typ Max Unit Static Characteristics Drain-source Breakdown oltage (BR)DSS = 0, I D = 250 μa Zero Gate oltage Drain Current DS = 1200, = I DSS DS = 1200, = 0, T J = 150 C μa Gate Leakage Current I GSS,F = 22, DS = I GSS,R = -6, DS = na I Drain-source On-state Resistance D = 10 A, = R DS(ON) I D = 10 A, = 20, T J = 150 C mω Gate Threshold oltage DS =, I D = 5 ma ,(th) DS =, I D = 5 ma, T J = 150 C Gate Resistance R G Resonance method, Drain-Source shorted Ω
3 Electrical Characteristics (T J = 25 C unless otherwise specified) alue Characteristics Symbol Conditions Unit Min Typ Max Dynamic Characteristics Turn-on Switching Energy E ON DD = 800, I D = 10 A, Turn-off Switching Energy E OFF = -5/+20, R G,ext = 5 Ω, μj L = 1.4mH, FWD=LSIC2SD120A05 Total Per-cycle Switching Energy E TS Input Capacitance C ISS Output Capacitance Reverse Transfer Capacitance C OSS C RSS DD = 800, = 0, f = 1 MHz, AC = 25 m pf C OSS Stored Energy E OSS μj Total Gate Charge Q g Gate-source Charge Q gs = 800, I DD = 10 A, D = -5/ nc Gate-drain Charge Q gd Turn-on Delay Time t d(on) Rise Time t DD = 800, GS = -5/+20, r I D = 10 A, R G,ext = 5 Ω, R L = 80 Ω, Turn-off Delay Time t d(off) Timing relative to DS ns Fall Time t f Reverse Diode Characteristics alue Characteristics Symbol Conditions Min Typ Max I Diode Forward oltage S = 5 A, = SD I S = 5 A, = 0, T J = 150 C Continuous Diode Forward Current I S GS = 0, T = 25 C C Peak Diode Forward Current 1 I SP Unit A Footnote 1: Pulse width limited by T J,max
4 Figure 1: Maximum Power Dissipation ( T J = 150 C ) Figure 2: Transfer Characteristics ( DS = 10 ) Figure 3: Output Characteristics ( T J = 25 C ) Figure 4: Output Characteristics ( T J = 150 C ) Figure 5: Output Characteristics (T J = -55 C) Figure 6: Reverse Conduction Characteristics (T J = 25 C)
5 Figure 7: Reverse Conduction Characteristics (T J = 150 C) Figure 8: Reverse Conduction Characteristics (T J = -55 C) Figure 9: Transient Thermal Impedance Figure 10: Safe Operating Area (T C = 25 C) Figure 11: On-resistance vs. Drain Current Figure 12: Normalized On-resistance
6 Figure 13: Threshold oltage Figure 14: Drain-Source Blocking oltage Figure 15: Junction Capacitances Figure 16: Junction Capacitances Figure 17: C OSS Stored Energy E OSS Figure 18: Gate Charge
7 Figure 19: Switching Energy vs. Drain Current Figure 20: Switching Energy vs. Gate Resistance Package Dimensions TO-247-3L E A E2/2 A2 OPTIONAL b2 (2x) E2 Q D e e A1 Recommended Hole Pattern Layout 2.46 R0.93 L1 L UNIT: mm c Notes: S ØP1 E1 b4 ØP D1 D2 b (3x) 1. Dimensions are in millimeters 2. Dimension D, E do not include mold flash. Mold flash shall not exceed mm per side measured at outer most extreme of plastic body. 3.øP to have a maximum draft angle of 38.1 mm to the top of the part with a maximum hole diameter of mm. Symbol Millimeters Min Nom Max A A A b b b c D D D e 5.44 BSC E E E L L øp øp Q S
8 Part Numbering and Marking System Packing Options SIC1MO120E0160 L F YYWWE ZZZZZZ-ZZ SIC = SiC 1 = Gen1 MO = MOSFET 120 = oltage Rating (1200 ) E = TO-247-3L 0160 = RDS(ON) (160 mohm) YY = Year WW = Week E = Special Code ZZZZZZ-ZZ = Lot Number Part Number Marking Packing Mode M.O.Q LSIC1MO120E0160 SIC1MO120E0160 Tube (30pcs) 450 Packing Specification TO-247-3L Ø Ø Ø Ø NOTE: 1. All pin plug holes are considered critical dimension 2. Tolerance is to be ±0.010 unless otherwise specified 3. Dimension are in inch (and millimeters). Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at
LSIC1MO120E V N-channel, Enhancement-mode SiC MOSFET
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