Mitsubishi Electric Semi-Conductors Division. IGBT Module 7th Generation T-Series. June 14, 2018

Transcription

1 Mitsubishi Electric Semi-Conductors Division IGBT Module 7th Generation T-Series June 14, 2018

2 7 th generation IGBT module SLC-Technology (SoLid Cover Technology) Optimized structure with resin insulation Direct potting resin PC-TIM / PressFit available LV100 package type NX package type std package type 7 th chip technology Improved trade-off IGBT (CSTBT) Diode (RFC) VCEsat vs Eoff dv/dt vs Eoff VEC vs Err dv/dt vs Err Low loss & Low dv/dt device TMS-Technology (Thick Metal Substrate) Optimized structure with Si 3 N 4 ceramic insulation Terminal US bonding PC-TIM available

3 IGBT Module T Series with 7th Gen. IGBT NX type Point New modules equipped with CIB*, contributes to simplifying design. Significant improvement of Power loss High reliability Simplified assembly process VC ES(V) 650V 1200V 1700V * CIB: Converter, Inverter, and Brake circuit C onnection C urrent Rating(A) NEW Some products are under development 35A 50A 75A 100A 150A 200A 225A 300A 450A 600A 1000A 2in1 6in1 7in1 CIB 2in1 6in1 7in1 CIB 2in1 6in1 2

4 VCEsat(V) Eoff(mJ/pulse) Significant improvement of Power loss 2,5 2 1,5 1 0,5 0 V GE =15V, Tj=125 5 th (CM75MX-24A) 6 th (CM75MXA-24S) 7 th (CM75MXUB-24T) VCEsat: 0.15V improvement from 6th Ic(A) Vcc=600V, Ic=75A V GE =±15V, Tj=125 7 th (CM75MXUB-24T) 5 th (CM75MX-24A) 6 th (CM75MXA-24S) Improvement of Trade off VCEsat and Eoff 0 1,4 1,6 1,8 2 2,2 2,4 VCEsat(V) Power loss is reduced with 7th-Gen. IGBT 3

5 High reliability 7 th -generation chips lead better trade-off characteristics and lower loss New package technologies realize High reliability and Light weight Press-Fit pins and PC-TIM* achieve easy mounting Outlook Features High Reliability Compatible with 6 th Gen. NX type Press-Fit pins available Package structure comparison wire 6 th Gen. chip Pre-applied PC-TIM* Power Auxiliary terminals terminals solder base plate 7 th Gen. direct potting ceramic substrate *PC-TIM: Phase Change - Thermal Interface Material Insulated Metal Base-plate structure 3

6 Matched Thermal Expansion NX/LV100 type Conventional Al wire Si Chip Al wire SLC-Technology DP- Resin Si Chip Cu baseplate Solder layers Material CTE * Al wire 23 Si Chip 2.3 [ppm/k] Ceramic substrate 4.5 ~ 7.0 Cu baseplate 17 Ceramic substrate Resin insulation Cu Material CTE * Al wire 23 Si Chip 2.3 Cu, Resin CTE*= Coefficient of Thermal Expansion Matching thermal expansion of copper and resin Solder layer [ppm/k] 17

7 DP-resin Matched Thermal Expansion Chi p SLC-Technology Al wire CTE*= Coefficient of Thermal Expansion Solder layer NX type Resin insulation Cu CTE * : Copper Resin SLC-Technology structure stress concentrates between different CTE of chip, solder, Al wire and decreases strain of each elements Reduced baseplate warpage reduced pumping out

8 Simulation CTE of components Warpage NX type Conventional SLC-Technology Plastic case Gel Chip Solder d e Chip Solder a b c a b c Base materials Symbol a b c Symbol a b c d e Material DBC Solder Copper CTE(10-6 /K) Material CTE (10-6 /K) Coppe r Insulato r Copper Plastic Resin Ta = 90 C Ta = 25 C *10 times amplified image Practically no pumping out of thermal interface material Improved reliability of Rth(c-s) which results in improved overall reliability

9 Simplified assembly process (NX type/std type) PC-TIM support Delivered product Solid in room temp. PC-TIM <ADVANTAGES> Easier to handle than thermal grease Save grease applied process at assembly Superior thermal conductivity owing to high heat dissipation material and strict thickness control After phase changed (during operation) Get softened and expand same as thermal grease Pre-application of PC-TIM is applicable to both stdtype and NX-type products. Mounted on glass for observation PC-TIM: Phase Change Thermal Interface Material PC-TIM contribute to simplifying the assemble process 4

10 Converter + Brake + Inverter Approx. 36% size reduction CIB Module (75A/1200V CIB-S package) IGBT Module S/S1series (75A/1200V CIB-M package) Smaller, simpler design for inverter systems 9

11 Converter + Brake + Inverter Converter Brake Inverter P P1 GuP GvP GwP R S T B W V U N GB N1 GuN GvN GwN E Smaller, simpler design for inverter systems 10

12 IGBT Module T Series with 7 th Gen. IGBT std type NEW Point Significant improvement of Power loss High reliability/compact and Light weight Simplified assembly process Some products are under development C urrent Rating(A) VC ES(V) conecction 75A 100A 150A 200A 300A 400A 450A 600A 650V 1200V 2in1 1700V 11

13 New package technologies realize Low internal inductance, High reliability, Compact, and Light weight Outlook High reliability/compact and Light weight Package inductance Main terminals of 6 th Gen. Package structure comparison 6 th Gen. wire chip wire bonding Approx. 30% reduction solder base plate ceramic substrate Pre-applied PC-TIM* Main terminals of 7 th Gen. 7 th Gen. ultrasonic (US) bonding *PC-TIM: Phase Change - Thermal Interface Material laminate area Solderless structure at the bottom side of substrate (TMS ** technology) **TMS: Thick Metal Substrate 6

14 7 th gen LV100 type line-up LV100-type Rated Curent Ic [A] Circuit Topology Package outline Package size 1200V 1700V 2in1 D 100mm x 140mm 800A t.b.d. 1200A

15 IGBT chip feature Cross sectional structure Conventional 7 th generation Keys 1. Thinner N - drift layer Low V CEsat Low E off 2. Optimized cell design Better controllability of dv/dt with R G

16 Tj=150, Vcc=600V, Ic=450A 1200V IGBT chip characteristics dv/dt(off) [kv/usec] V CEsat vs E off trade-off E off vs dv/dt (off) trade-off R G _total=2.1 Sample evaluation result 40 Conventional 450A/1200V Rg_total=4.3~ th gen. IGBT 450A/1200V Better performance!! 0 1,7 1,75 1,8 1,85 1,9 1,95 2 V CEsat Tj=150, Ic=450A - - Mitsubishi 7 th - - Conventional Eoff [mj] 7 th gen. IGBT has better static and dynamic characteristics. It also has better controllability of dv/dt with R G.

17 E rr T j =150 C, I E =450A,V CC =600V 1200V Diode chip characteristics dv/dt(on) [kv/usec] Mitsubishi 7 th - - Mitsubishi 6 th 7 th gen. IGBT 450A/1200V V EC vs E rr trade-off Better performance!! 0 1,5 1,6 1,7 1,8 V EC Tj=150 C, I E =450A Conventional 450A/1200V E rr vs dv/dt (rec) trade-off 10.3 R G _total= R G _total= Sample evaluation result E rr [mj] RFC diode improves the E rr vs. V EC trade-off from 6 th gen. Diode. Err against dv/dt is further reduced than the other diodes.

18 Thermal cycling capability std type Conventional TMS Weakest point against thermal cycle No solder Temperature cycling test (-40 ~ 125 ) Corner of Cu layer Before test After 300cyc. Before test After 1000cyc. No crack until 1000cyc. more than 3 times higher capability

19 PressFIT Main terminals Market standard MITSUBISHI (6in1) NX type Shape IGBT module Press-in force 75-81N/pin 76N/pin Press-out force 59-64N/pin 50N/pin PCB Auxiliary terminals Market standard MITSUBISHI (2in1) Press fit main terminal Press fit terminals Shape Press-in force 110N/pin (typ.) 100N/pin (typ.) Press-out force n/d 40N/pin Plated through-hole The same requirement as market standard (PCB material, thickness and hole diameter) Improved reliability and reduced contact resistance

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