The State-of-The-Art and Future Trend of Power Semiconductor Devices

Size: px

Start display at page:

Download "The State-of-The-Art and Future Trend of Power Semiconductor Devices"

Elfrieda Stone
5 years ago
Views:

1 CPSSC 2015, Shenzhen The State-of-The-Art and Future Trend of Power Semiconductor Devices 7 Nov Dr. T. Fujihira( ( 藤平龍彦 ) Fuji Electric Co., Ltd( ( 富士電機 ) Fuji Electric Co., Ltd. All rights reserved. 1

3 What will come? Population grows 1.5 times GDP grows 6 times World Population (Billions) World GDP (Billions 2005 USD) Red line: IEO2014 history & projection Dashed line: linear fitting Year Source: World Population Prospects: The 2012 Revision Population Division of the Department of Economic and Social Affairs of the United Nations Secretariat Year Source: International Energy Outlook 2014, Reference case, U.S. Energy Information Administration Fuji Electric Co., Ltd. All rights reserved. 3

4 Energy/Resources and Climate Change Energy consumption 3 times Temperature +1 to +3 degree Sea level +0.4 to +0.8 m World Primary Energy Consumption (Quadrillion Btu) Red line: IEO2013 history & projection Dashed line: linear fitting Year Source: International Energy Outlook 2013, Reference case, U.S. Energy Information Administration Source: IPCC 5 th Assessment Report Climate Change 2014 Synthesis Report, 2015 Figure SPM.6. Fuji Electric Co., Ltd. All rights reserved. 4

5 What we should do as power electronic R&D or Industries Switch from fossil to renewable energies solar, wind, storage, etc. Increase efficiency of power conversion, generation, transmission, distribution, etc. Reduce consumption, increase reuse and recycle of limited natural resources including Cu and Iron in PE systems to establish a sustainable society Fuji Electric Co., Ltd. All rights reserved. 5

8 Latest Performance of GaN Devices Ron-A[mΩ cm2] Panasonic(GaN-HEMT) Avogy(GaN-vertical-PNDi) Avogy(GaN-vertical-FET) Hitachi-metal(GaN-vertical-PNDi) Sumitomo(GaN-vertical SBD) Toyota Gosei(GaN-vertical-FET) All data are from published papers. No mass-produced product in the market BV [V] Fuji Electric Co., Ltd. All rights reserved. 8

Applications of Hybrid-SiC Power Modules

Shinkansen Auxiliary power supply - Tokyo

690V stack inverter 200/400V general purpose

, Ltd. - Fuji Electric Co., Ltd. TOSHIBA Co.

9 Applications of Hybrid-SiC Power Modules VVVF inverter for next gen. Shinkansen Auxiliary power supply - Tokyo Metro Co., Ltd. - Fuji Electric Co., Ltd. Mitsubishi Electric Co. 690V stack inverter 200/400V general purpose inverter VVVF inverter - Tokyo Metro Co., Ltd. - Fuji Electric Co., Ltd. TOSHIBA Co. Fuji Electric Co., Ltd. All rights reserved. 9

Applications of All-SiC Power Modules Test vehicle and power

- Residential PV inverter Toyota Motor Co.

1MW PV inverter 320kV high voltage pulse generator Using SiC

10 Applications of All-SiC Power Modules Test vehicle and power control units VVVF inverter - Odakyu Electric Railway Co., Ltd. - Residential PV inverter Toyota Motor Co. Mitsubishi Electric Co. 1MW PV inverter 320kV high voltage pulse generator Using SiC discrete MOSFET Fuji Electric Co., Ltd. Fukushima SiC Applied Engineering Inc. Fuji Electric Co., Ltd. All rights reserved. 10

11 Applications of GaN HEMT Yaskawa Electric. Co. applied GaN-HEMT to residential PV inverter high efficiency 96.5% 98.2% 40% size down Toshiba Lighting & Technology Co. GaN-HEMT applied to power supply of LED Fuji Electric Co., Ltd. All rights reserved. 11

Loss Comparison IGBT/Hybrid-SiC/All-SiC [Calc. condition] fc=2 ~16kHz,Vcc=600V, Io=1/2rated, λ=1.0, fo=50hz, cosφ=0.

12 Loss Comparison IGBT/Hybrid-SiC/All-SiC [Calc. condition] fc=2 ~16kHz,Vcc=600V, Io=1/2rated, λ=1.0, fo=50hz, cosφ= V Device Decreasing rate of All-SiC against Si -19% -33% -48% -61% Fuji Electric Co., Ltd. All rights reserved. 12

Loss Comparison IGBT/Hybrid-SiC/All-SiC [Calc. condition] fc=2 ~16kHz, Vcc=900V, Io=1/2rated, λ=1.0, fo=50hz, cosφ=0.

13 Loss Comparison IGBT/Hybrid-SiC/All-SiC [Calc. condition] fc=2 ~16kHz, Vcc=900V, Io=1/2rated, λ=1.0, fo=50hz, cosφ= V Device Decreasing rate of All-SiC against Si -48% -59% -68% -73% Fuji Electric Co., Ltd. All rights reserved. 13

14 Loss Comparison IGBT/Hybrid-SiC/All-SiC [Calc. condition] fc=2 ~16kHz, Vcc=1800V, Io=1/2rated, λ=1.0, fo=50hz, cosφ= V Device Decreasing rate of All-SiC against Si -73% -79% -82% -84% Fuji Electric Co., Ltd. All rights reserved. 14

17 All-SiC Module Example SiC MOSFET Module installed to 1MW 3-phase PV inverter 98.8% Efficiency 20% smaller footprint, lighter weight, less mechanical materials Product Release Aug Fuji Electric Co., Ltd. All rights reserved. 17

All-SiC Example - 20kW 3-Phase PV Inverter 99% efficiency

1/2 device loss 1/2 Device Loss Compared to Si IGBT

2 Power Conversion Efficiency All-SiC PV Inverter Si-IGBT

18 All-SiC Example - 20kW 3-Phase PV Inverter 99% efficiency even at high carrier frequency 1/8 power stack size and 1/2 device loss 1/2 Device Loss Compared to Si IGBT Efficiency 効率 [%] (%) Power Conversion Efficiency All-SiC PV Inverter Si-IGBT PV Inverter 1/4 Inverter Size 1/8 Power Stack Size 周波数 fc (khz) [khz] 1200V-100A All-SiC Module Installed Fuji Electric Co., Ltd. All rights reserved. 18

19 Silicon / Hybrid-SiC / All-SiC IGBT Hybrid-SiC All-SiC Loss 1 2/3 1/2 Material 1 2/3 1/2 or fc LC 1 1/4 1/16 C C D G G G E Si-IGBT+Si-FWD (conventional) E Si-IGBT+SiC-SBD (started) S SiC-MOS+SiC-SBD (coming) Fuji Electric Co., Ltd. All rights reserved. 19

Device :1G RC-IGBT Aluminum direct cooling fin with jacket

175 guaranteed Dimension :162mm 116mm 24mm Application example

25 Application of RC-IGBT Next Gen. high power module for EV/HEV Features System :750V/800A 6in1 Device :1G RC-IGBT Aluminum direct cooling fin with jacket Tj(op) :Operation Temp. 175 guaranteed Dimension :162mm 116mm 24mm Application example Motor Output :80-150kW VDCmax :450V IACpeak :460Arms Carrier freq. :6kHz outlet flange inlet Fuji Electric Co., Ltd. All rights reserved. 25

Trend and Forecast of Power Density of Automotive IGBT Module 800

gen M651,M652 Automotive 2 st.gen Cu direct Water-cooling 6 th.

Module 2 st.gen Al direct Water-cooling 14 in 1 Module 1 st.

gen Al direct Water-cooling Output Power density [kva/l] = Max.

26 Trend and Forecast of Power Density of Automotive IGBT Module 800 Output Power density [kva/l] Industry 4 th.gen M651,M652 Automotive 2 st.gen Cu direct Water-cooling 6 th.gen 1 st.gen Cu indirect Water-cooling M in 1 2 nd Gen.Module 2 st.gen Al direct Water-cooling 14 in 1 Module 1 st.gen Al direct Water-cooling st.gen Al direct Water-cooling Output Power density [kva/l] = Max. continuous output power [kva] / Module volume [L] Fuji Electric Co., Ltd. All rights reserved. 26

28 Technical Overview of 1200V IGBT Gate Emitter Gate Emitter Emitter Emitter Emitter N + P N + P N + P N + P N + P Gate Gate Gate N - drift N - drift N - drift N - drift N - drift N + field-stop N + field-stop P + collector P + collector Collector N + buffer P + substrate 3 rd Gen. (N-Series) Y1995 P + collector Collector 4 th Gen. (S-Series) Y1998 N-field-stop P + collector Collector 5 th Gen. (U-Series) Y2002 Collector 6 th Gen. (V-series) Y th Gen. (X-series) Trench gate + Field-stop Fine surface pattern Thinner drift layer Collector Fuji Electric Co., Ltd. All rights reserved. 28

30 Technical Overview of 1200V FWD Anode Anode Anode Anode Cathode 6 th Gen. (V-series) Y2007 Cathode 7 th Gen. (X-series) Cathode 3 rd Gen. (JA-Series) Y1994 Cathode 5 th Gen. (U-Series) Y2002 Optimized lifetime control Thinner drift layer Fuji Electric Co., Ltd. All rights reserved. 30

31 Achievement of 7G FWD 1200V Reduced Vf Soft recovery Reduced Eon+Err Tj=150 C 9% reduction at dv/dt=10kv/us. Reverse recovery dv/dt: Tj=R.T., V CC =600V, I C =10A (1/10x I nom ), V GE =+15/-15V. Switching conditions: Tj=150 C, V CC =600V, I C =100A (1x I nom ), V GE =+15V/-15V. Fuji Electric Co., Ltd. All rights reserved. 31

Cross-section of solder (under chips) after dtj power cycling

32 Achievement of 7G IGBT Package 175 degree C operation is assured Cracks Conventional solder Less deterioration New solder Cross-section of solder (under chips) after dtj power cycling test (at the same cycles). Fuji Electric Co., Ltd. All rights reserved. 32

9, modulation rate=1.0, Rg=reverse recovery dv/dt 10kV/us, Ta=40 C, Rth(f-a)/leg=0.

33 Impact of 7G IGBT Module Reduced loss and reduced Tj or increased output Inverter drive conditions: V DC =600V, I O =35Arms, f O =50Hz, f C =4, 8kHz, cosφ=+0.9, modulation rate=1.0, Rg=reverse recovery dv/dt 10kV/us, Ta=40 C, Rth(f-a)/leg=0.60 C/W, Loss characteristics are at Tj=150 C with smaller package Fuji Electric Co., Ltd. All rights reserved. 33

36 RB-IGBT Installed T-3level IGBT Module Already available in market AT-NPC : Advanced T-type NPC (Neutral-Point-Clamed) 4in1 IGBT Module (1200V/300A) P T1Gu T1Gv T1Gw TH1 TH2 T3Gu T3Eu T1/T4Eu T1/T4Ev T1/T4Ew U T3Gv T3Ev T4Gu M V 12in1 IGBT Module (1200V/100A) T3Ew T3Gw T4Gv W T2Gu T2Gv T2Gw T4Gw T1 P N T2Eu T2Ev T2Ew T3 C M U T4 T2 N Fuji Electric Co., Ltd. All rights reserved. 36

500kVA 3phase-UPS Using RB-IGBT Peak efficiency improved by 2 point Volume and weight cut down to 2/3 of 2-level Conventional 2-level T-Type With RB-IGBT

37 500kVA 3phase-UPS Using RB-IGBT Peak efficiency improved by 2 point Volume and weight cut down to 2/3 of 2-level Conventional 2-level T-Type With RB-IGBT installed FUJI UPS 7000HX-T3 500kVA η=95.1% η=97.1% S. Takizawa et al., Proceedings of PCIM Europe 2012 pp Fuji Electric Co., Ltd. All rights reserved. 37

39 Comparison of SiC and Si-IGBT Power Density Loss or fc Material Chip Inverter IGBT+FWD Next gen RB-IGBT AT-NPC 2/3 2 2/3 3/4* 1.5 RC-IGBT Hybrid-SiC 2/3 2 2/ All-SiC 1/2 4 1/2 2 2 *because of the increased number of switches Fuji Electric Co., Ltd. All rights reserved. 39

40 Trend and Forecast of Power Density and Loss of Power Device Chips 1200V chip or chip set Power Density: Power Rating (Voltage x Current) / Total Chip Area Loss: Estimated Total Power Dissipation in 400VAC General Purpose Inverter Fuji Electric Co., Ltd. All rights reserved. 40

41 Power Semiconductor Device Technology Year of Products All-SiC Module 1G 2G 3G Hy-SiC Module 1G 2G 3G RC-IGBT Module 1G 2G 3G RB-IGBT Module 1G 2G 3G IGBT Module 6G 7G 8G SiC MOSFET 1G 2G 3G SiC SBD 1G 2G 3G SJ-MOSFET 1G 2G 3G 600V,1200V,1700V 4G Trench MOSFET(LV) 2G 3G 4G 5G Fuji Electric Co., Ltd. All rights reserved. 41

42 Die footprint size (a.u.) [L series=100] Power Module Packaging Technologies 175 o C Improve tech today, 200 o C Evolutional new package Junction max temperature 125 o C 150 o C 175 o C 200 o C L series N series Si IGBT trend (50A-1200V) S series U series V series Si Limit 7G-IGBT SiC-Hybrid New package for SiC device SiC device Fuji Electric Co., Ltd. All rights reserved. 42

,"1-mw Solar Power Inverters using new Three-level IGBT Modules

46 1MW 3-phase PV Inverter Using RB-IGBT Peak efficiency measured is as high as 98.5% K.Fujii et.al.,"1-mw Solar Power Inverters using new Three-level IGBT Modules connected in parallel," in Proc. PCIM Asia 2012, pp Fuji Electric Co., Ltd. All rights reserved. 46

et al, IEDM2013 Dynamic Characteristics of

47 SiC Updates 16kV IGBT Low Vf and highly reliable 16 kv ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT, Yonezawa, Y.et al, IEDM2013 Dynamic Characteristics of Large Current Capacity Module using 16-kV Ultrahigh Voltage SiC Flip-Type n-channel IE-IGBT, Mizushima T, ISPSD2014 Fuji Electric Co., Ltd. All rights reserved. 47

48 7G-IGBTs and RC-IGBTs as The Next Generation Silicon Power Devices RB-IGBT and AT-NPC for η=98.5%+ SiC-SBD/Si-IGBT for η=98.8%+ reducing cost & size of LC and mechanical or 1.5XIout SiC-MOSFET/SBD for η=99.0%+ and reducing cost & size of LC and mechanical or 2XIout Fuji Electric Co., Ltd. All rights reserved. 48

Fuji Electric Power Semiconductors

Fuji Electric Power Semiconductors Device Application Technology Dept. Semiconductors Division-Sales Group Fuji Electric. Co., Ltd. July 2018 Fuji Electric Co., Ltd. All rights reserved. 1 Fuji Electric