The application of SiC on vehicles and its future

Transcription

1 Center for Power Electronics Annual Conference 2018 Loughborough University 1 The application of SiC on vehicles and its future 4 th July, 2018 Dr. Kimimori Hamada Project General Manager EHV Electronics Design Div. Toyota Motor Corporation

2 Contents 2 1. Vehicle Electrification - Toyota s strategy - Development of electrified vehicles - Vehicle electrification technologies - Application of SiC Power Semiconductor Devices on Electrified Vehicles 2. SiC device technologies to expand automotive use - Development of Trench MOSFET With Ultra Low R on Q gd - Stacking Fault Expansion and the Countermeasures 3. Summary

3 What our customers and society require for cars 3

4 To reduce CO 2 emissions 4

5 Units in operation (in billions) Global Population Growth and Vehicle Units in Operation 5 Population 10 (in billions) Asia Population vehicle per 8 people 750 mil. units Africa vehicle per 40 people 70 mil. units Units in operation North America Latin America, Caribbean Europe Oceania Population and number of vehicles on load will grow mainly in emerging markets Sources: 1) United Nations Department of Economic and Social Affairs 2) World Business Council for Sustainable Development

6 Toyota s Basic Response 6 To address 3 issues, vehicle electrification is essential 1) Improving fuel efficiency 2) Reducing CO 2 to prevent global warming 3) Making emissions cleaner to prevent air pollution Environment-friendly vehicles contribute to the environment only when widely used.

7 Contents 7 Toyota s development of electrified vehicles

8 Vehicle size Environmentally friendly electrified vehicles 8 FCV HV/PHV Full-size trucks EV Short-distance commuter vehicles Home delivery vehicles Passenger cars Route buses Home delivery trucks Personal mobility Travel distance EVs: Short-to-medium distance; HVs & PHVs: Wide-use; FCVs: Medium-to-long distance

9 New Vehicle Zero CO 2 Emissions Challenge 9 Challenge 1: New-vehicle Zero CO 2 Emissions Challenge Average CO 2 emissions for new vehicles 90% reduction Vehicles powered by only internal combustion engines HV PHV FCV EV Accelerate next-generation vehicle development toward 90% reduction in CO 2 emissions

10 Vehicle electrification milestones : Zero CO2 emissions challenge Vehicles powered by only internal combustion engines From 2020: BEV rollout in earnest 2030 Electrified vehicles > 50% BEV FCEV >10% By around 2025: Electrified grade available for all vehicle models HEVs PHEVs 1997: World s first mass-production HEV 2014: FCEV FCEVs BEVs

11 Total (in millions 累計 of ( 万台 units) ) 1, Yearly 年間 ( 万台 ) 1, mil (in millions of 販売台数 No. of Total sales units) units sold ( 年間 ) mil., units (annual) (at end of Sept. 2017) No. of 販売台数 units sold ( 累計 ) (total) 5005 万台 mil 万台 mil 万台 mil (1 月 ) 0 CO2 2 reduction 1, 削減量 (annual) 2, ( 年間 ) 3, CO2 2 reduction 削減量 (total) 4, ( 累計 ) 5, Toyota HV Sales Results & CO 2 Reduction 10 million 6, ,200 Yearly 7, mil. tons 141,400 (in millions of Total tons) (in millions 累計 of ( 万 tons) t) 8, ,600 年間 ( 万 t) Total HV sales reached 10 million units in January 2017! CO 2 reduction compared to similar gasoline-engine vehicles was 77 mil. tons ,000 11

12 Top OEM of Electrified Vehicles 12 3,232 Global Total HV 2,410 EV 490 PHV 330 FCV 2.6 Toyota HV+PHV+FCV 1,400 43% Electrified Vehicle Market Share (CY 2016) (Unit: 1,000 vehicles) Calculated by Toyota from IHS data

13 Contents 13 Toyota s vehicle electrification technologies

14 3 Core Technologies and Electrified Vehicles 14 Motor Engine HV Battery Engine Charging PHV PCU(Inverter) Fuel Cell Charging Hydrogen Tank H 2 O 2 H 2 EV FCV

15 Evolution of 3 Core Technologies 15 Motor Output: 200% UP Volume: DOWN 50% Power Density 400% UP Battery Weight: 30~50% DOWN Volume: 60% DOWN PCU Energy loss: 80% DOWN Volume: 50% DOWN

16 Higher Fuel Efficiency & Lower Hybrid System Costs 16 Fuel efficiency (km/l) Fuel 燃費 efficiency (km/l)(km/l) JC08 Japanese test cycle JC08 Japanese test cycle Japanese test cycle Japanese test cycle HV HVsystem システムコスト cost HV system cost 1st-generation First-generation Prius PriusSecond-generation 2nd-generation Prius Prius Third-generation 3rd-generation Prius New New Prius HV HV technology technology significantly significantly evolved evolved in in fuel terms efficiency of fuel with efficiency reduced with reduced cost cost

17 Contents 17 Application of SiC Power Semiconductor Devices on Electrified Vehicles

18 CAMRY 18 SiC MOSFET SiC JBS Diode Full SiC PCU Installing SiC power semiconductors (MOSs and diodes) in the PCU We started road testing of this Camry in early February, 2015 Evaluating fuel efficiency under various driving condition

19 SiC JBS Diode Fuel cell system of the FC bus FC Boost Converter FC boost Converter FC Stack 19

20 Tokyo Toei FC Bus 20 To( 都 )05line: Tokyo station Marunouchi-Minamiguchi~Tokyo Big Sight Regular commercial operation in Tokyo since March, 2017 Over 100 FC Buses will be introduced before Tokyo Olympic/Paralympic games

21 Heavy-duty FC Track 21 The Project Portal heavy-duty truck concept generates more than 670 horsepower and 1,325 pound feet of torque from two Mirai fuel cell stacks, and its estimated driving range is more than 200 miles Toyota Drives the Future of Zero Emission Trucking

22 Next generation Convenience Stores and Small FC Truck 22 Toyota Promotes CO2 Emission Reduction and Energy Conservation in Convenience Store Distribution and Operation

23 Electric Vehicles 23 Toyota to Introduce 10 New Electrified Vehicles in China by 2020 City Commuters E-Palette Concept Toyota Strongly Promotes the Development of Electric Vehicles.

24 Contents Vehicle Electrification - Toyota s strategy - Development of electrified vehicles - Vehicle electrification technologies - Application of SiC Power Semiconductor Devices on Electrified Vehicles 2. SiC device technologies to expand automotive use - Development of Trench MOSFET With Ultra Low R on Q gd - Stacking Fault Expansion and the Countermeasures 3. Summary

25 25 ICSCRM2007(Ohtsu) Keynote Speech Challenges to reduce cost: 1) Development of Low R on Q gd MOSFET 2) Practical use of body diode of MOSFET

26 Contents 26 Development of Trench MOSFET With Ultra Low R on Q gd Deep-P Encapsulated 4H-SiC Trench MOSFETs With Ultra Low R on Q gd (DENSO@ISPSD2018)

27 Development of ultra low R on Q gd power MOSFET 27 [1] DENSO REVOSIC HP

28 Development of ultra low R on Q gd power MOSFET 28

29 Development of ultra low R on Q gd power MOSFET 29

30 Development of ultra low R on Q gd power MOSFET 30

31 Development of ultra low R on Q gd power MOSFET 31

32 Contents 32 Stacking Fault Expansion due to Body Diode Operation and the Countermeasures

33 Synchronous Rectification 33 In order to reduce conduction losses and device cost, the synchronous rectification is important technology. However, the body diode of MOSFET operates during dead time. Gate Source Dead Time Synchronous rectification Dead Time Vg:ON P N Vg:OFF I diode Vg 0 H L V Ron V ak 0 V f Vdd Drain Time chart of synchronous rectifier operation

34 Types of Stacking Faults 34 There are Two types of Stacking Faults: Triangle and Bar-shaped. The expansion of the triangle SFs ended when the shape reached a triangle. Bar-shaped SFs expand continuously to the end of the active area. Larger impact on electrical properties

35 VDS(V) VDS(V) Stacking Faults Expansion 35 Initial 1min 2min 3min 5min 7min 10min 20min 30min VON(Ids=200) Stress Time (min) VF(Ids=200) Stress Time (min)

36 Effect of Thickness of Buffer layer to suppress the expansion of SFs 36 Reliability Investigation with Accelerated Body Diode Current Stress for 3.3kV 4H-SiC MOSFETs with Various Buffer Epilayer Thickness 3.3 kv 4H-SiC MOSFETs with various buffer layer thickness has been fabricated in order to investigate the bipolar degradation associated with the expansion of stacking faults. Y. Ebiike, et. al., Mitsubishi Electric Corporation, ISPSD (2018)

37 Embedded SBDs in planar SiC MOSFETs kv Schottky-Barrier-Diode-Embedded SiC-MOSFET for Compact Full- Unipolar Module The purpose of this work is to remove external SBD chips from modules while maintaining device reliability to realize compact high Voltage SiC modules that are free from bipolar degradation. K. Kawahara, et. al., Mitsubishi Electric Corporation, ISPSD (2017)

38 SWITCH-MOS (SBD-wall integrated trench MOSFET) 38 "Body-PiN-diode inactivation with low on-resistance achieved by a 1.2 kv-class 4H-SiC SWITCH-MOS" Y. Kobayashi, et. al., Fuji Electric Co. Ltd. and AIST, IEDM (2017)

39 SWITCH-MOS (SBD-wall integrated trench MOSFET) 39 Y. Kobayashi, et. al., Fuji Electric Co. Ltd. and AIST, IEDM (2017)

40 Contents Vehicle Electrification - Toyota s strategy - Development of electrified vehicles - Vehicle electrification technologies - Application of SiC Power Semiconductor Devices on Electrified Vehicles 2. SiC device technologies to expand automotive use - Development of Trench MOSFET With Ultra Low R on Q gd - Stacking Fault Expansion and the Countermeasures 3. Summary

41 Summery Automotive industry is facing profound transformation that comes only once in 100 years. 2.Toyota will strategically develop new values, Electrification, Information and Intelligence. 3.Toyota believes vehicle electrification is essential to reduce CO 2. We accelerate next-generation electrified vehicles development. 4.In order to expand SiC application on vehicles to contribute toward the reduction of CO 2, we have to reduce total cost of system. Low R on A device development and improving reliability are key activities for engineers and researches.