Efficient High-Voltage GaN Devices and ICs for Next Generation Power Management Solutions

Transcription

1 Efficient High-Voltage GaN evices and ICs for Next Generation Power Management Solutions

2 History 1997 Preparation of foundation at Ulm University 2002 Foundation Seed Investment (KfW) 1st customers 2005 Series A Invest (MAZ, TechnoStart, KfW) inch Production Capacity 2007 JEEC/HTOL Test 1000V Power evice- and 400 C IC-Prototypes 2008 ISO 9001:2000 Certification Patent 3 -GaN evice Technology for State of the Art (Performance & Cost) Power evices 2009 Series B Invest (TechnoStart, KfW) 6-inch Production Capacity First 600V 5A iode Prototypes New Cleanroom facility started operation 2010 First HV GaN-Switch & iode Successful Prototype Tests at several cooperation partners

3 Target Application Power Supply Solar Avionics HEV High Volume High Volume Low Volume Time-to-Market? -up to 600V V V 600V..1200V - efficiency improvement - compact (volume/weight) - lower device count - circuit complexity reduction - efficiency improvement - compact (volume/weight) - HT operation - weight reduction - efficiency improvement - weight reduction initial Market for MicroGaN 600V SB & Switch

4 HV GaN/SiC Market 600 Mio US$ 500 Mio US$ 400 Mio US$ PFC Power Supply UPS Industrial Motor rives PV Inverters 300 Mio US$ 200 Mio US$ 100 Mio US$ 0 Mio US$ Source: IMS Report 2010

5 GaN Power Electronic: Global Players USA: Commercial: IRF 30A/12V Module, 600V in Q4/2011 EPC V 4..25mΩ Noff Transphorm 600V devices and modules (Integra 200V RF-HEMT) Research: HRL Labs 5A/1110V NOff Commercial focus on low Voltage Apps Europe: Commercial: MicroGaN Research: IMEC FBH ST IAF MGG 3 180mΩ/600V NOn, SB 600V 600V NOff 300V NOff G²REC national devel. program starting, PowerGaNPlus NeuLand only MicroGaN commercially visible Asia: Commercial:? Research: Furukawa Sanken Matsushita ROHM Fujitsu 1800V NOn SB 600V, NOff 800V NOff starting NOff HEMT large # of Papers & Presentations MicroGaN is leading in efficient 600V GaN technology!

6 GaN-on-Si Technology

7 MicroGaN Technology Advantages Surface devices: epitaxial malfunctions are less critical Simple and robust technology Multiple wafer sources Standard and low cost processing technologies High margin iodes and transistors introduced simultaneously Unique on Market NO oping NO Implantation One Chip High Speed Switching diodes and transistors on one chip Unique on Market 4 & 6 wafer size at production start Prosper prospective Ampere/ No body diode freedom to integrate or to omit Lower component count, NO recovery current NO Qrr for Switch NO Qrr for iode

8 GaN-on-Si Technology Process / evice Advantages by MicroGaN 3-GaN approach: Chip area efficiency: Price/IE, parasitics/ie iode & Switch process on same Wafer Interleave technology Potential of complex HV circuits Standard Packaging compatibility: low Assembly/Packaging cost Pad Area Pad Area Pad Area Active Area Pad Area ie Area Pad Area Pad Area Active Area ie Area 3-GaN Chip

9 evices Today High Power evices

10 evices Today High Power evices Source 0V rain 600V 200µm Au MicroGaN evice Unit Cell AlGaN/GaN AlGaN GaN Si Silicon Ti/Ni/Au MicroGaN Core Functional evices S N-ON Switch N-OFF Switch G iode G S Si MOSFET S Gate Si-SB GaN HEMT G GaN HEMT S Cathode If rain G G S Source Anode Basic elements for all power application with ONE MICROGaN CORE EVICE

11 evices Today High Power evices MicroGaN evice Unit Cell S N-ON Switch 600V / 180mOhm N-ON Switch G 2580 µm 1244 µm rain Gate Ron On-Resistance / mω S G Source RON= 180mΩ Area Efficiency Today: ~ 570mΩmm2 IS rain-source Current / A

12 N-ON Switch in ThinPAK by Infineon AG

13 Results obtained by Infineon AG

14 Results obtained by Infineon AG

15 Results obtained by Infineon AG

16 Basic Benchmark CoolMOS IPL60R199CP N-On GaN HEMT in 8x8 ThinPAK QG = 32nC QG = 3.5nC COSS = 72pF COSS = 38pF RSon = 199mΩ RSon = 200mΩ I,pulse = 52A I,pulse > 35A Qrr = 5.5µC Qrr = -- Cut dynamic losses in halve! Hard switching new topologies made possible!

17 evices Today High Power evices MicroGaN 600V Schottky Barrier iode A Si-SB Q = 18.6nC GaN HEMT S Vb = 0.3V C IF = 4A A 1 C A 2: Cathode 5 iode If 4 G 3: Anode 5L TO-263 I-V-Characteristics I-V-Characteristics V VR Reverse Voltage / V 0 0,0 0,4 0,8 1,2 1,6 VF Forward Voltage / V 2,0 iode Capacitance C / pf -300 C-V-Characteristics IF Forward Current / A IR Reverse Current / µa V VR Reverse Voltage / V 0

18 evices Today High Power evices Best in Class 600V Schottky Barrier iode C-V-Characteristics SiC MicroGaN CR Reverse-Capacitance / pf I-V-Characteristics IF Forward Current / A iode SiC MicroGaN VF Forward Voltage / V Lowest barrier voltage lowest C-loss highest power efficiency VR Reverse Voltage / V Lowest reverse capacitance lowest reload charge QR highest power efficiency

19 evices Today High Power evices Best in Class Reverse Recovery Charge current iode - MicroGaN Prototype - Fast Si-evice Forward trr MicroGaN time Irrpeak MicroGaN trr Silicon Irrpeak Silicon 50ns/div Measurement: iotec Semicondutor AG Lowest Irr x trr Lowest Qrr highest speed highest power efficiency

20 evices Today High Power evices MicroGaN 600V N-OFF Switch N-OFF Switch G S Si MOSFET GaN HEMT S COSS = 42pF 3: rain 2: Gate G RSon = 320mΩ 1 G S 5 G S 4: Source 5L TO-263 VGS = 0V Transfer-Characteristics 2,5 I rain Current / A I rain Current / µa VS = 0.7V 2,0 1,5 COSS = 42pF 1,0 CISS = 1.3nF VS = 100V VGS = 0V 0,0-0, VS rain-source Voltage / V VGS Gate-Source Voltage / V 5

21 evices Today Benefit

22 Application Example SiC and GaN SB Performance Comparison Loss istribution Ultra High Efficiency PFC Prototype Integrated Magnetics Volume / Loss Reduction New MOSFETs / iodes Ceramic Capacitors Low Power SP Power ensity: ~ 1.35kW/ltr. GaN (Simulated) and Cree-SiC System (Re-Simulated) required ie area for 99.34% efficiency: 16.5mm2 25mm2 MicroGaN's first prototype requires 35% less die area than SiC diodes Further Information: J. Biela, ETH Zurich, biela@lem.ee.ethz.ch Power Ele ctronicsystem s Labo ratory

23 Benefit Conventional Power Conversion Benefits from MicroGaN evices MicroGaN iode (Step up converter): less voltage barrier & less stored charge flat efficiency curve + high switching speed Step up converter H-Bridge MicroGaN Switch (Step up converter): less output charge flat efficiency curve + high peak efficiency in MicroGaN Switch (H-Bridge): less output charge + less/no Qrr flat efficiency curve + high peak efficiency MicroGaN Freewheeling-iode (H-Bridge): hard switch and high switching speed Highest Efficiency & Smaller Passive Components Light Weight & Compact Application Lowest Application Cost out

24 Basic Elements for Power Applications MicroGaN evice Unit Cell N-ON Switch in ThinPAK N-OFF Switch iode G S

25 Contact: r. Ertuğrul Sönmez Business evelopment Lise-Meitner-Straße Ulm / Germany ertugrul.soenmez@microgan.com web: Phone: Fax: Content Confidential. All rights at MicroGaN GmbH.