Surface MEMS Design Examples Dr. Lynn Fuller Webpage:

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1 ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING Surface MEMS Design Examples Webpage: 82 Lomb Memorial Drive Rochester, NY Tel (585) Department webpage: SurfaceMEMsDesignExamples.ppt Page 1

2 OUTLINE Introduction Cross Section Test Structures Cantilever Thermally Actuated Speaker Microphone Chemical/Humidity Sensor Mirror Electrostatic Torsional Heater and Sensors AC/DC Switch Thermal Actuators - Microgripper Comb Drive Actuators Probe Resistor- Bolometer Gas Flow Sensor Peltier Cooling Magnetic Field Sensor Page 2

3 INTRODUCTION This document provides example layouts for devices made with RIT s surface micromachine process. This process is capable of making many different types of MEMS devices. This MEMS fabrication process is CMOS compatible (with some modifications) back end module that can be added to realize compact microsystems (CMOS plus MEMS). Page 3

4 DEVICE CROSS SECTION Mechanical Poly Layer Sacrificial Oxide Metal Field Oxide Bottom Poly Starting Wafer Bottom Poly 1 (Red) Layer 1 Sacrificial Oxide (Blue Outline) Layer 2 Anchor (Green) Layer 3 Mechanical Poly 2 (Purple) Layer 4 Contact Cut (White) Layer 6 Metal (Blue) Layer 7 Outline (Yellow Outline) Layer 9 No Implant Yellow Layer 15 Holes Layer 16 (combined with Poly 2) Page 4

5 2014 MEMS MULTICHIP PROJECT DESIGN Total 15 mm by 15 mm plus 500 um for sawing into 9 chips for overall 16.5mm by 16.5mm size. Wafer sawing is easier if all chips are the same size 5mm by 5mm design space for each project Page 5

6 One of the cells will have test structures along the bottom edge for resolution/overlay,etc. TEST STRUCTURES Page 6

TEST STRUCTURES 1. Poly1 in Parallel with Poly2 2. No Etch Holes Poly 2 3. 5um Etch Holes Poly2 4. Metal contact to Poly2 to Poly1 5. Metal contact to Poly1 6. 2um Etch Holes Poly2 7.

7 TEST STRUCTURES 1. Poly1 in Parallel with Poly2 2. No Etch Holes Poly um Etch Holes Poly2 4. Metal contact to Poly2 to Poly1 5. Metal contact to Poly1 6. 2um Etch Holes Poly2 7. Poly2 No Implant, No SacOx 8. Poly2 No Implant 9. Poly2 No Implant 5um Gap 10. Poly2 No Implant 5um Resistor 11. Poly 2 No Implant 10um Resistor Starting from Left Resistors L = ~100µm W = ~50µm Page 7

8 CANTILEVER, MIRROR OR ACCELEROMETER R C m Ymax V+ Electrostatic Actuation Capacitor Sensor Resistor Sensor Accelerometer or Mirror Page 8

9 MENTOR GRAPHICS LAYOUT OF CANTILEVER Page 9

10 MENTOR GRAPHICS LAYOUT OF CANTILEVER Page 10

11 MENTOR GRAPHICS LAYOUT OF CANTILEVER Resistor Page 11

12 THERMALLY ACTUATED SPEAKER Starting Wafer Page 12

13 THERMALLY ACTUATED SPEAKER Page 13

14 THERMALLY ACTUATED SPEAKER Page 14

15 MICROPHONE Starting Wafer Top plate diaphragm Fixed bottom plate with holes Sound Pressure Output Capacitance Page 15

16 MICROPHONE Page 16

17 MICROPHONE Page 17

18 CHEMICAL SENSOR OR HUMIDITY SENSOR Interdigitated fingers form electrodes for either resistive or capacitive sensors. For capacitive sensors the fingers are closely spaced. The chemically sensitive coating is resistive and the resistance changes in the presence of some chemical to be sensed or the coating is not conductive but the dielectric constant changes in the presence of some chemical to be sensed. DC or DR Page 18

19 CHEMICAL SENSOR OR HUMIDITY SENSOR Page 19

20 CHEMICAL SENSOR OR HUMIDITY SENSOR 1µm gap 490µm length 82 fingers 500µm Heater L 460µm Heater W Page 20

21 MIRROR Page 21

22 MIRROR Page 22

23 MIRRORS Page 23

24 TORSIONAL MIRROR Page 24

25 HEATERS AND TEMPERATURE SENSORS Polysilicon SacOx Aluminum Oxide Resistor Heater Thermocouple Sensor Resistor Sensor Page 25

SEEBECK EFFECT When two dissimilar conductors are connected together a voltage may be generated if the junction is at a temperature different from the temperature at the other end of the conductors

26 SEEBECK EFFECT When two dissimilar conductors are connected together a voltage may be generated if the junction is at a temperature different from the temperature at the other end of the conductors (cold junction) This is the principal behind the thermocouple and is called the Seebeck effect. Hot DV = a 1 (T cold -T hot ) + a 2 (T hot -T cold )=(a 1 -a 2 )(T hot -T cold ) Where a 1 and a 2 are the Seebeck coefficients for materials 1 and 2 Material 1 Material 2 Cold DV Nadim Maluf, Kirt Williams, An Introduction to Microelectromechanical Systems Engineering, 2 nd Ed Page 26

27 HEATER AND TEMPERATURE SENSORS Page 27

28 MEMS SWITCH Signal Line Signal Line Electrostatic actuation (V) pulls down contactor to make connection along the signal line. Signal Line Signal Line V Page 28

29 SWITCH CALCULATIONS PLUS DIMENSIONS Each project has 5mm x 5mm layout space Artur Nigmatulin 2011 Page 29

30 AC MEMS SWITCH Page 30

31 AC MEMS SWITCH Page 31

32 DC MEMS SWITCH Page 32

33 DC MEMS SWITCH Page 33

34 PROBE Page 34

35 ALL ABOVE CELLS Page 35

36 RESISTOR - BOLOMETER Resistor is suspended in air. Page 36

37 THERMAL FLOW SENSORS gas Heater Upstream Temp Sensor Downstream Temp Sensor Flow Spring 2003 EMCR 890 Class Project Polysilicon SacOx Si3N4 Silicon Substrate Aluminum Page 37

38 GAS FLOW SENSOR gas Overall Size 5000um x 1400um Heater 700um x 200um Sensors 700um x 50um Page 38

39 CHEVRON ACTUATOR 10 Angle 1000um Thermal Expansion for Si is 2.33E-6/ C Current flow causes heating and movement Page 39

40 CHEVRON ACTUATOR 10 Angle 1000um Page 40

41 POLYSILICON THERMAL ACTUATORS No current flow Current flow Page 41

42 TWO ARM THERMAL ACTUATOR Dots on 100µm Page 42

43 MICRO GRIPPER 2000µm Page 43

44 MICRO GRIPPER Page 44

45 CALCULATION OF DISPLACEMENT VS VOLTAGE t L F = r o t V 2 / 2 d d movement Page 45

46 COMB DRIVE ACTUATOR Page 46

47 COMB DRIVE ACTUATOR Dots - 1um Markers Page 47

48 PELTIER EFFECT Heat pump device that works on the gain in electron energy for materials with low work function and the loss in energy for materials with higher work function. Electrons are at higher energy (lower work function) in n-type silicon. heat Cu Cu Cu n p n p n electrons I Cu Cu Cu Cu heat Page 48

49 PELTIER COOLING Page 49

50 PELTIER COOLING Page 50

51 THE HALL EFFECT The Hall effect was discovered in 1879 by Edwin H Hall. The Hall voltage (V H ) is created across a conductor, transverse to the current flow (I) and perpendicular to a magnetic field (B). The Hall coefficient is defined as the ratio of the Hall voltage to the product of Current and magnetic field. The Hall coefficient is a function of the carrier type (+ or -), charge (q=1.6e-19), and carrier concentration (n). V H = - I B q n t - V H + L B t I w Page 51

52 HALL EFFECT MAGNETIC FIELD SENSOR Page 52

53 HALL EFFECT MAGNETIC FIELD SENSOR Dots 10µm Grid Page 53

54 HOMEWORK DESIGN EXAMPLES 1. Draw the Layout for a device you would like to build. 2. Export the GDS-II file and it to your instructor. Use the process /tools/ritpub/process/mems-2014 Page 54

55 HOMEWORK DESIGN PRESENTATION 1. Prepare a PowerPoint presentation and present it to the class. 1.Title page, Name, Date, Rochester Institute of Technology, MCEE770 MEMS Fabrication 2. Introduction and Overview (1 or 2 pages) 3. Appropriate Calculations (1 or 2 pages) 4. Layout (a few pages) with dimensions added, zoom in to some areas, show all layers, show selected layers 2. Bring your PowerPoint on a Flash Drive and load on the instructors computer at the start of class. Page 55

Miniature Aerial Vehicle. Lecture 4: MEMS. Design Build & Fly MIT Lecture 4 MEMS. IIT Bombay

Miniature Aerial Vehicle. Lecture 4: MEMS. Design Build & Fly MIT Lecture 4 MEMS. IIT Bombay Lecture 4 MEMS MEMS Micro Electrical Mechanical Systems Practice of making and combining miniaturized mechanical and electrical components Micromachines in Japan Microsystems Technology in Europe MEMS