Reliability and Qualification Report EPISIL 2um CMOS Process (SP232CE and SP3223EEA Products)

Transcription

1 Reliability and Qualification Report EPISIL 2um CMOS Process (SP232CE and SP3223EEA Products) Prepared by: G. West Reviewed by: Fred Claussen Manager, Quality Assurance VP Quality & Reliability Date: 6/9/6 Date: 6/9/6 EPISIL 2um CMOS Process Qualification Page 1 of 6 June 6, 26

2 Table Of Contents Title Page 1 Table of Contents 2 Manufacturing Information 2 Package Information 2 Reliability Test Summary 3 Life Test Data 3 FIT Data Calculations 4 MTBF Data Calculations 4 Temperature Cycle Testing 4 ESD Testing Contact Discharge 5 Air Gap Discharge 5 Human Body Model 6 Latch-up 85C 6 Manufacturing Information: Products: Lot Numbers: Mask Sets: Process: Wafer Manufacturer: Assembly Location: SP232CE and SP3223EEA 2um CMOS Products SP232CE: B5C14L5A, B5C14L51A, B5C14L52A SP3223EEA:, B5C14L54, B5C14L55 SP232CE: MS187DZ SP3223EEA: MS117D 2um CMOS Episil Carsem / Unisem - Malaysia Package Information: Package Type: SP232CE: 16L NSOIC SP3223EEA: 2L TSSOP EPISIL 2um CMOS Process Qualification Page 2 of 6 June 6, 26

3 Reliability Test Summary: As part of the plan to transfer 2um CMOS production from Sipex Hillview fabrication facility to Episil, a subcontractor foundry in Taiwan, a suite of reliability tests were performed on two representative Sipex products, the SP23CE - Enhanced RS-232 Line Driver/Receiver, and the SP3223EEA - Intelligent +3.V to +5.5V RS-232 Transceiver. The reliability test suite included 125C Operating Life Test for 1 hours; 3 cycles of temperature cycling from -65C to 15C; Latch-up testing at high temperature (85C), and ESD testing using the Human Body Model, Machine Model, and Contact Discharge Model. The results of each of these tests are reported below. 125C Operating Life Test Reliability Qualification Summary: Stress Level Device Lot Number Sample Size No. Fail 168Hrs 5Hrs 1Hrs SP232CE SP3223EEA SP232CE SP3223EEA SP232CE SP3223EEA B5C14L5A B5C14L51A B5C14L52A B5C14L5A B5C14L51A B5C14L52A B5C14L5A B5C14L51A B5C14L52A Life Test Results As part of the Episil process characterization and qualification program, the Engineering group had subjected 3 lots of samples of each of the SP232CE and SP3223EEA parts (total 462 parts) for a 1hour reliability life test at 125 C. EPISIL 2um CMOS Process Qualification Page 3 of 6 June 6, 26

4 FIT Rate Calculations The FIT (failures in time) rate is the predicted number of failures per billion devicehours. This predicted value is based upon the: 1. Life Test conditions (time and temperature, device quantity, and number of failures) are summarized under HTOL test table. 2. Activation Energy (E a ) of the potential failure modes. The weighted Activation Energy, E a, of observed failure mechanisms of Sipex products has been determined to be.8 ev. Based on the above criteria, FIT rates at 25, 55, and 7 C operation at both 6% and 9% confidence levels for 2um Episil process were calculated and listed below. FIT Rate: 2um CMOS Episil Process Confidence Level +25 C +55 C +7 C 6% % FIT = 1 Failure per Billion Device-Hours MTBF Rate: 2um CMOS Episil Process Confidence Level +25 C +55 C +7 C 6% 1.7E E+7 2.2E+7 9% 4.22E E E+6 Temperature Cycle Testing As part of the Episil process characterization and qualification program, the Engineering group had subjected 3 lots of samples of each of the SP232CE and SP3223EEA parts (total 462 parts) for a 3 cycles of Temperature Cycle testing over the temperature range of -65C to 15C. No failures were detected through the duration of the test. SP232CE 3 cycles Temp Cycle ( -65C/ 15C): B5C14L5A Pass B5C14L51A Pass B5C14L52A Pass EPISIL 2um CMOS Process Qualification Page 4 of 6 June 6, 26

5 SP3223EEA 3 cycles Temp Cycle ( -65C/ 15C) : Pass B5C14L54 Pass B5C14L55 Pass ESD Testing Two units from each lot of each device type were subjected to Contact Discharge ESD testing and Air Gap discharge ESD testing. Both device types passed Contact Discharge ESD testing at +/- 8KV. The SP232CE passed Air Gap Discharge ESD testing at +15KV/-9KV, whereas the SP3223EEA passed Air Gap Discharge ESD testing at +/- 15KV. Three units of each device type were subjected to Human Body Model ESD testing. Both device types passed HBM testing at +/-2KV. The ESD results are summarized below: SP232CE CONTACT DISCHARGE ESD: B5C14L5A 2 Pass +/8KV, -8KV B5C14L51A 2 Pass +/8KV, -8KV B5C14L52A 2 Pass +/8KV, -8KV SP3223EEA CONTACT DISCHARGE ESD: 2 Pass +/8KV, -8KV B5C14L54 2 Pass +/8KV, -8KV B5C14L55 2 Pass +/8KV, -8KV SP232CE AIR GAP DISCHARGE ESD: B5C14L5A 2 Pass + 15 KV, -9KV B5C14L51A 2 Pass + 15 KV, -9KV B5C14L52A 2 Pass + 15 KV, -9KV EPISIL 2um CMOS Process Qualification Page 5 of 6 June 6, 26

6 SP3223EEA AIR GAP DISCHARGE ESD: 2 Pass + 15 KV, -15 KV B5C14L54 2 Pass + 15 KV, -15 KV B5C14L55 2 Pass + 15 KV, -15 KV SP232CE Human Body Model ESD: B5C14L5A 3 Pass + 2 KV, -2KV B5C14L51A 3 Pass + 2 KV, -2KV B5C14L52A 3 Pass + 2 KV, -2KV SP3223EEA Human Body Model ESD: 3 Pass + 2 KV, -2KV B5C14L54 3 Pass + 2 KV, -2KV B5C14L55 3 Pass + 2 KV, -2KV Latch-up Testing Two units from each lot of each device type were subjected to Latch-up testing at high temperature, 85C. Both device types passed Latch-up testing. The test results are summarized below: SP232CE 85C: B5C14L5A 2 Pass B5C14L51A 2 Pass B5C14L52A 2 Pass SP3223EEA 85C: 2 Pass B5C14L54 2 Pass B5C14L55 2 Pass EPISIL 2um CMOS Process Qualification Page 6 of 6 June 6, 26