PRODUCT/PROCESS CHANGE NOTIFICATION

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1 PRODUCT/PROCESS CHANGE NOTIFICATION PCN APG-ABD//77 Dated Feb VIPower M5 - Activation of " Wafer Fab Catania as Additional Location /

2 PCN APG-ABD//77 - Dated Feb Table. Change Implementation Schedule Forecasted implementation date for change Forecasted availability date of samples for customer Forecasted date for STMicroelectronics change Qualification Plan results availability Estimated date of changed product first shipment -Jul- -Feb- -Feb- -Jul- Table. Change Identification Product Identification (Product Family/Commercial Product) Type of change Reason for change Description of the change see list Waferfab additional location Service Improvement In order to improve Capacities and Service inches wafer Fab Catania has been qualified as additional location for VIPower M5 technology products. Change Product Identification Manufacturing Location(s) "V5" traceability code identify " wafer fab ]Catania Ctm ]Catania Ctm /

3 PCN APG-ABD//77 - Dated Feb DOCUMENT APPROVAL Name Liporace, Nicola Nicoloso, Riccardo Minerva, Francesco Function Marketing Manager Product Manager Q.A. Manager /

4 PROCESS/PRODUCT CHANGE NOTIFICATION VIPower M5: Activation of " Wafer Fab. Catania as Additional Location. WHAT In order to improve Capacities and Service inches wafer Fab Catania has been qualified as additional location for VIPower M5 technology products. WHO All the Customers using below list of products. Part Number VND5ASP E / VND5ASPTR E VND5ATR E VND5BSP E / VND5BSPTR E VND5BTR E VNH59A E / VNH59ATR E VND5EASP E / VND5EASPTR E VN5EAFH E / VN5EAFHTR E VN5EAHTR E VN5EMH E / VN5EMHTR E VN5ENAHTR E VN5RH E / VN5RHTR E Samples Availability wk wk9 wk wk available wk wk wk wk wk wk WHEN Change will be implemented according to the following schedule: -Qualification results enclosed to this PCN (RRCT5). -Samples availability: see upon table. -Tentative Implementation on July WHERE Catania (CT CTM) / Catania (CM5 CTM).

5 VIPower ML5 technology transfer from CTM Catania (Italy) to CTM Catania (Italy) General Informations Locations Commercial Product VND5EASP-E Diffusion fab location ST CTM Catania (Italy) Product Line VH Assembly plant location ST Muar (Malaysia) Silicon process technology VIPower M5 Test plant location ST Muar (Malaysia) Package PowerSO Reliability lab location ST Catania (Italy) General Informations Locations Commercial Product VND5B-E Diffusion fab location ST CTM Catania (Italy) Product Line VH Assembly plant location ASE (Korea) Silicon process technology VIPower M5 Test plant location ST Muar (Malaysia) Package PQFN Power x Reliability lab location ST Catania (Italy) Author: F.CERAULO Product Qualification Eng APG Q&R Catania Reliability and electrical test executed by: S.Di Stefano - M.Spitaleri Rel. Eng. APM Rel Dept. APG Support RRCT5 Date of issue: Dec the rd Page: of

6 Table of contents Section Pag Content Reliability evaluations overview. Objectives. Results Traceability Devices characteristics VND5ASP-E. Generalities. 7 Pins connection. 7 Blocks diagram. 7 Bonding diagram.5 Package outline / Mechanical data 9 Devices characteristics VND5B-E. 9 Generalities. Pins connection. Blocks diagram. Bonding diagram.5 Package outline / Mechanical data 5 Reliability qualification plan and results Summary table Electrical Drift Analysis RRCT5 Date of issue: Dec the rd Page: of

7 -. Reliability evaluations overview. Objectives Aim of this report is to present the results of the reliability evaluations performed on VND5EASP- E (VH as ST internal silicon line) and on VND5B-E (VH as ST internal silicon line) chosen as test vehicles in order to transfer the VIPower ML5 technology from ST CTM Catania (Italy) wafer fab to ST CTM Catania (Italy) wafer fab. These are multi chip Double High Side Driver products with analog current sense for Automotive Application. The VND5EASP-E is assembled by ST Muar (Malaysia) in PowerSO- package while the VND5B-E is assembled by ASE (Korea) subcontractor in QFPN x package. The reliability evaluation was based on three lots, two of them of VND5EASP-E and one of VND5B-E. According with the AEC_Q Rev.G specification for the Accelerated Environment Stress (test Group A) and the Accelerated Lifetime Simulation (test Group B) the following tests were performed for each lot: Preconditioning (PC), Temperature Humidity Bias (THB), Autoclave (AC), Thermal Cycling (TC), High Temperature Storage (HTS), Power Temperature Cycling (PTC), High Temperature Operative Life (HTOL). An ESD characterization (HBM, CDM), the Latch-UP (LU) and Gate Leakage (GL) control were also done as Electrical Verification (test Group E).. Results All reliability tests have been completed with positive results, neither functional nor parametric rejects were detected at final electrical testing. The drift analysis performed at T=+5 C examining I OFF@V, R ON@V, K _CK@V (for VND5EASP- E) and I OFF@V, R ON@V (for VND5B-E), showed a good stability for all the electrical monitored parameters. Based on the overall positive results we consider the products qualified from a reliability point of view. RRCT5 Date of issue: Dec the rd Page: of

8 -. Traceability VND5ASP-E Wafer fab manufacturing location Wafer diameter Silicon process technology Die finishing back side Die size Metal materials/levels Die finishing front side Wafer fab information ST CTM CATANIA (Italy) as signal part ST CTM CATANIA (Italy) as power die as signal part, as power die VIPower M5E signal part, VIPower ML5 power die VNS (signal) Raw silicon, VNS9 (power) Ti-Ni-Au VNS (signal) x9, VNS9 (power) 57x5 micron VNS (signal) Ti/TiN/Ti/AlSiCu / levels (. micron last level) VNS9 (power) Ti/TiN/TiAlCu/ level (.7 micron) SiN / Polyimide Diffusion Lots # Lot : VNS (signal) 5, VNS9 (power) 55 Lot : VNS (signal) 79, VNS9 (power) 55 Assembly plant location Package description Molding compound Wires bonding materials/diameters Assembly Information ST Muar (Malaysia) PowerSO_ FRAME PSO- riv -/5-fused SUMITOMO EME-G7LS Au.mils (on signal) / Al mils (on power) Die attach material PREFORM Pb/Ag/Sn 97.5/.5/ TAPE ADWILL LE-5PAS Assembly Lots # Lot: 999VS, Lot: 999VT Electrical testing manufacturing location Final Testing Information ST Muar (Malaysia) Reliability test execution location Reliability Information ST Catania (Italy) RRCT5 Date of issue: Dec the rd Page: of

9 VND5B-E Wafer fab information Wafer fab manufacturing location ST CTM CATANIA (Italy) as signal part ST CTM CATANIA (Italy) as power die Wafer diameter as signal part, as power die Silicon process technology VIPower M5E signal part, VIPower ML5 power die Die finishing back side VNS (signal) Ti-Ni-Au, VNI (power) Ti-Ni-Au Die size VNS (signal) x5, VNI (power) 799x micron Metal materials/levels VNS (signal) Ti/TiN/TiAlCu / levels (. micron last level) VNI (power) Ti/TiN/TiAlCu / level (.7 micron) Die finishing front side VNS (signal) SiN / Polyimide, VNI (power) Teos + PTeos + SiOn + PIX Diffusion Lots # VNS (signal), VNI (power) 557 Assembly Information Assembly plant location ASE (Korea) Package description PQFN Power x Molding compound Sumitomo G7 Wires bonding materials/diameters Au.mils (on signal) / Al mils (on power) Die attach material PREFORM Pb/Ag/Sn 95.5/.5/ D/A ADHESIVE ABLE 9 Assembly Lots # HACZA Electrical testing manufacturing location Final Testing Information ST Muar (Malaysia) Reliability test execution location Reliability Information ST Catania (Italy) RRCT5 Date of issue: Dec the rd Page: 5 of

10 -. VND5EASP-E - Devices characteristics. Generalities RRCT5 Date of issue: Dec the rd Page: of

11 . Pins connection. Blocks diagram. Bonding diagram RRCT5 Date of issue: Dec the rd Page: 7 of

12 .5 Package outline/mechanical data RRCT5 Date of issue: Dec the rd Page: of

13 -. VND5B-E - Devices characteristics. Generalities RRCT5 Date of issue: Dec the rd Page: 9 of

14 . Pins connection. Blocks diagram. Bonding diagram RRCT5 Date of issue: Dec the rd Page: of

15 .5 Package outline/mechanical data RRCT5 Date of issue: Dec the rd Page: of

16 - 5. Reliability qualification plan and results AEC # Test Name STM Test Conditions Sample Size/ Lots Results Fails/SS/Lots Comments A A A PC Pre Cond THB Temp Humidity Bias AC Autoclave Preconditioning at Jedec Level, store 9 hours at Ta=ºC, RH=%, reflow ( times) at 5ºC Ta=5ºC, RH=5%, V CC =5V for hours Ta=ºC, Pa=atm, RH=% for 9 hours Before THB, AC, TC Reliability executed on units soldered on PCB 77/ /77/ 77/ /77/ xvnd5easp xvnd5b xvnd5easp xvnd5b A A5 A B E E E E TC Temp. Cycling PTC Power Temp. Cycling HTSL High Temp. Storage Life HTOL High Temp. Op. Life Ta=-5ºC / +5ºC for 5 cycles 77/ /77/ Per JA5. Ta=-ºC / +5ºC for cycles. Test before and after at room and hot temperatures. Ta=5ºC for hours. TST before and after at room and hot temperatures. Bias Static stress (JESD-A): Ta=5ºC, V CC = 5V for hours ESD HBM 5/ 5/ /5/ 5/ /5/ 77/ /77/ V CC/Output: ±5.kV CS_DIS/Input: ±.kv CS: ±.kv xvnd5easp xvnd5b Only on VND5EASP-E xvnd5easp xvnd5b xvnd5easp xvnd5b Only on VND5EASP-E ESD HBM / All pins: ±.kv Only on VND5B-E ESD CDM / All pins: ±75V Both products LU Latch-Up / ±ma E GL Gate Leakage / Passed RRCT5 Date of issue: Dec the rd Page: of

17 -. Electrical drift analysis Assy Lot_999VS VND5EASP-E - Assy Lot _999VS TC- K_CH@V(k) VND5EASP-E - Assy Lot _999VS Autoclave - K_CH@V(k) TC cy TC cy TC 5cy Line h Line +% AC 9h Line h Line +% VND5EASP-E - Assy Lot _999VS HTOL- K_CH@V(k VND5EASP-E - Assy Lot _999VS THB - K_CH@V(k) HTOL h HTOL 5h Line h HTOL h Line +% THB h THB 5h Line h THB h Line +% VND5EASP-E - Assy Lot _999VS HTSL - K_CH@V(k) HTS h HTS 5h Line h HTSh Line +% RRCT5 Date of issue: Dec the rd Page: of

18 VND5EASP-E Assy Lot_999VS TC - Isoff@V(µA) - Lot VND5EASP-E Assy Lot_999VS HTOL - Isoff@V(µA) - Lot TC cy TC cy TC 5cy Line h HTOL h Line h HTOL 5h HTOL h VND5EASP-E Assy Lot_999VS Autoclave - Isoff@V(µA) - Lot AC 9h Line h VND5EASP-E Assy Lot_999VS THB - Isoff@V(µA) - Lot THB h THB h THB 5h Line h VND5EASP-E Assy Lot_999VS HTSL - Isoff@V(mA) - Lot HTS h HTS h HTS 5h Line h RRCT5 Date of issue: Dec the rd Page: of

19 VND5EASP-E - Assy Lot _999VS TC - Ron@V_CH(mΏ) VND5EASP-E - Assy Lot _999VS HTOL - Ron@V_CH(mΏ) TC cy TC cy Line h Line +% TC 5cy 5 7 HTOL h HTOL 5h Line h Line +% HTOL h VND5EASP-E - Assy Lot _999VS Autoclave - Ron@V_CH(mΏ) VND5EASP-E - Assy Lot _999VS THB - Ron@V_CH(mΏ) AC 9h Line h Line +% 5 7 THB h THB 5h Line h Line +% THB h VND5EASP-E - Assy Lot _999VS HTSL - Ron@V_CH(mΏ) HTS h HTS 5h Line h Line +% HTS h RRCT5 Date of issue: Dec the rd Page: 5 of

20 Assy Lot_999VT VND5EASP-E - Assy Lot _999VT TC - K_CH@V(k) VND5EASP-E - Assy Lot _999VT Autoclave - K_CH@V(k) TC cy TC cy TC 5cy Line h Line +% AC 9h Line h Line +% VND5EASP-E - Assy Lot _999VT HTOL - K_CH@V(k) VND5EASP-E - Assy Lot _999VT THB - K_CH@V(k) HTOL h HTOL 5h Line h HTOL h Line +% THB h THB 5h Line h THB h Line +% VND5EASP-E - Assy Lot _999VT HTSL - K_CH@V(k) HTS h HTS 5h Line h HTSh Line +% RRCT5 Date of issue: Dec the rd Page: of

21 VND5EASP-E - Assy Lot _999VT TC - Isoff@V(µA) VND5EASP-E - Assy Lot _999VT HTOL - Isoff@V(µA) TC cy TC cy TC 5cy Line h HTOL h Line h HTOL 5h HTOL h VND5EASP-E - Assy Lot _999VT Autoclave - Isoff@V(µA) - Lot VND5EASP-E - Assy Lot _999VT THB - Isoff@V(µA) - Lot AC 9h Line h THB h THB h THB 5h Line h VND5EASP-E - Assy Lot _999VT HTSL - Isoff@V(mA) - Lot HTS h HTS h HTS 5h Line h RRCT5 Date of issue: Dec the rd Page: 7 of

22 VND5EASP-E - Assy Lot _999VT TC - Ron@V_CH(mΏ) VND5EASP-E - Assy Lot _999VT HTOL - Ron@V_CH(mΏ) TC cy TC cy Line h Line +% TC 5cy 5 7 HTOL h HTOL 5h Line h Line +% HTOL h VND5EASP-E - Assy Lot _999VT Autoclave - Ron@V_CH(mΏ) VND5EASP-E - Assy Lot _999VT THB - Ron@V_CH(mΏ) AC 9h Line h Line +% 5 7 THB h THB 5h Line h Line +% THB h VND5EASP-E - Assy Lot _999VT HTSL - Ron@V_CH(mΏ) HTS h HTS 5h Line h Line +% HTS h RRCT5 Date of issue: Dec the rd Page: of

23 Assy Lot_HACZA VND5B E_Assy Lot HACZA cy VND5B E_Assy Lot HACZA h cy 5cy Line h 5h h Line h Line +% Line +% VND5B E_Assy Lot HACZA HTSL_ISOFF@V_(uA) h VND5B E_Assy Lot HACZA THB_ISOFF@V_(uA) h 5h h Line h 5h h Line h Line +% Line +% VND5B E_Assy Lot HACZA AUTOCLAVE_ISOFF@V_(uA) 9h Line h Line+ % RRCT5 Date of issue: Dec the rd Page: 9 of

24 VND5B E_Assy Lot HACZA cy cy 5cy Line h Line +% VND5B E_Assy Lot HACZA HTOL_RON@V_(mΩ) h 5h h Line h Line +% VND5B E_Assy Lot HACZA HTSL_RON@V_(mΩ) h VND5B E_Assy Lot HACZA THB_RON@V_(mΩ) h 5h h Line h 5h h Line h Line +% Line +% VND5B E_Assy Lot HACZA AUTOCLAVE_RON@V_(mΩ) 9h Line h Line +% RRCT5 Date of issue: Dec the rd Page: of

25 Public Products List PCN Title : VIPower M5 - Activation of " Wafer Fab Catania as Additional Location PCN Reference : APG-ABD//77 PCN Created on : 5-FEB- Subject : Public Products List Dear Customer, Please find below the Standard Public Products List impacted by the change: ST COMMERCIAL PRODUCT VN5EAHTR-E VN5EMH-E VN5EMHTR-E VN5RH-E VN5RHTR-E VND5ASP-E VND5ASPTR-E VND5ATR-E VND5BSP-E VND5BSPTR-E VND5BTR-E VND5EASP-E VND5EASPTR-E VNH59A-E /

26 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND / OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE ( AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION ), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS AUTOMOTIVE GRADE MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners c STMicroelectronics - All rights reserved. STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

PRODUCT/PROCESS CHANGE NOTIFICATION

PRODUCT/PROCESS CHANGE NOTIFICATION PCN APG-ABD/3/795 Dated 28 Jun 203 VIPower M05 in SOT-223: Transfer from Carsem to Fujitsu Assembly Plant /5 PCN APG-ABD/3/795 - Dated 28 Jun 203 Table. Change Implementation