A Trace-Embedded Coreless Substrate Technique
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1 A Trace-Embedded Coreless Substrate Technique Chang-Yi(Albert) Lan, 藍章益 SPIL (Siliconware Precision Industries Co., Ltd) No. 153, Sec. 3, Chung Shan Rd, Tantzu Dist, Taichung, Taiwan, R.O.C.
2 Outline Introduction of Embedded Technology Package Features & KEY Drivers Challenges & its Solutions Future Developing Roadmap Conclusions
3 Outline Introduction of Embedded Technology Package Features & KEY Drivers Challenges & its Solutions Future Developing Roadmap Conclusions
4 Smartphone Evolution NOW 9.3mm 140g 7.6mm Smartphone 112g Outstanding Battery Life Better Performance Thinner & Lighter Form Factors Mobile Phone is going for several KEY features, including longer battery life, better performance with more functions, and small form factors (thinner & lighter).
5 Smartphone Thickness/Area Trend Area vs. Thickness System Volume vs. Battery Volume Source: PRISMARK, 2013, Jan x58.6 mm 9.3mm 140g 123.8x58.6 mm 7.6mm 112g Smartphone panel size will continue to increase, but thickness continue to decrease. Battery volume can only remained relatively SAME due to small factor constraints.
6 Advantages of Embedded & Coreless Technology Portable Devices becoming smaller, thinner, and more complex driving the advantages of Embedded & Coreless Technology Core ETS Coreless Substrate C R L PCB IPD PCB
7 Types of Embedded Technology Embedded Technology Embedded Passive Embedded Trace Embedded IPD Embedded Active Die Die Die
8 Types of Embedded Technology Embedded Technology Embedded Passive Embedded Trace Embedded IPD Embedded Active Die Die Die Today!!!
9 WHY EMBEDDED TRACE? 612.3/018KK CORE Normal Sub. 4 PP Embedded Sub. Source: PRISMARK, Unimicron, 2013, Aug.
10 Outline Introduction of Embedded Technology Package Features & KEY Drivers Challenges & its Solutions Future Developing Roadmap Conclusions
11 Package Features Wire Bond / Flip Chip Type Package Structures Package Characteristic: Using mold compound/pre-preg material & lead-frame to build up Embedded trace & coreless substrate. It allows lead-frame as routable traces Flexible I/O layout. Wire Bond Type Package Flip Chip Type Package Compound Die Bonding wire Compound Die Embedded trace & coreless substrate Cu Pillar Bump Die Die
12 Shrink PKG size by Design Design capability can shrink package size for low cost and small form factor 128 IO : TQFP 14X14 10x10 ( Due to Routable Trace) 256 IO : LQFP 24X24 12X12 or 13x13 Product Drivers Flexible I/O layout and package outline as same as TFBGA. TQFP 128, 14x14 DR-QFN 128, 12x12 Embedded Trace 128, 10x10
13 Product Drivers - continue Better Electrical Performance (Based on same 10*10mm2 PKG size) Compared with QFN (w/ longer wire length), Product has much shorter wire length and better electrical performance. Better Thermal Performance (Based on same 10*10mm2 PKG size) Compared with TFBGA, Product has thicker stud via Cu volume and has much better thermal performance.
14 Product Sweet Spot (for Wire Bonding) Mainly compete with current substrate based products(tfbga) Product Sweet Spot: Area III (8x8~15x15mm Body Size; 100~400 I/O Range) Is working on bigger PKG size up to 18*18mm I/O Body size v.s. I/O count Product TFBGA QFN DR-QFN Multi-row QFN sweet spot I x x x o x o o x x o x x x o o o o o o o x o x o o x II o x o o 6x6 12x12 18x18 3x3 9x9 15x15 x o x o o x o o x o x III x x x x x x Under development PKG Size
15 Product Sweet Spot (for Flip Chip) FC type Sweet Spot: Area II (4x4~15x15mm Body Size ; 52~600 I/O Range) In sweep spot area, FC type product can replace FCCSP for low cost solution. III II I
16 Outline Introduction of Embedded Technology Package Features & KEY Drivers Challenges & its Solutions Future Developing Roadmap Conclusions
17 Substrate Process Flow Pre-mold/Pre-PregLead-frame Process Using lithography and Cu plating on a carrier purposely to create routable lines. Plating Line(PL) and None Plating Line(NPL) all can design in. (1) (2) (1). Bottom Window Image Pre-treatment Cu view plating transfer Etching of real sample Dry Metal Film Molding Carrier Stripping (2). Side and view (2nd (For (Cu (1st OSP top ball plating) Cu of coating diagram layer) trace) pad) (Cu trace + Pre-Mold) Embedded Trace & Coreless substrate Flip-Chip Substrate Unit Top side (1/4 Bock) Supporting Frame Mold Compound Back side (1/4 Bock) same as (Cu trace + PP + S/M)
18 Assembly Process Flow Assembly Process Flow Wafer Grinding / Saw Die Attach Molding Marking FC Type Product PMC Packing / Shipping FVI S/G B/P
19 PKG Comparison (Embedded Trace v.s. SAP) Item Feature 1 ETS SBT Coreless Normal FCCSP SBT Core Photo PP Core Cost Warpage Feature 2 Lower much earlier induce non-wetting issue due to poor warpage Trace below base line Higher more difficult induce non-wetting issue due to better warpage Trace above base line Photo DF Seed Layer Etchant 15 Etchant Etch Process Seed Layer Etching 15 5 After Etching 15 Confidential Routine-ability Non-Wetting Performance Much earler to achieve finer L/S for more routine-ability space Poor More difficult to achieve finer L/S for more routine-ability space Good
20 Signed Warpage [um] Process Risk Assessment & 1 st ENG Run Process Risk Assessment Process (PKG: 1.2mm) Risk Level Die Attach Wire Bonding Molding Ball Placement Final Inspection Reliability Test Risk Item * Warpage Silicon Substrate PCB Board Warpage Schematic st ENG run SPEC: HT <=80um (=3.1mils) RT <=100um (=4mils) C 50C 100C 150C 183C 217C 245C 260C 245C 217C 183C 150C 100C 50C 32C Avg Conclusion : Warpage issue is major concern. Actions : Go simulation & DOE study by different Pre-mold & Molding compound to find out better BOM material.
21 Simulation Result Package Information : Package size: 13 mm x 13 mm Die size: 5 mm x 6 mm Simulation Results : Warpage Simulation Pre-mold MC-A MC-B Pre-mold Pre-A Pre-B Pre-C Tg ( ) Tg ( ) CTE (ppm/c) High Low CTE (ppm/c) Low High Medium E (kg/mm2) Low High E (kg/mm2) High Medium Low Leg Compound material MC-A MC-B Tg ( ) CTE (ppm/c) High Low E (kg/mm2) Low High Pre-mold material Pre-A Pre-B Pre-C Pre-A Compound thickness (mm) Die thickness (mil) Simulation warpage (mil) Base on simulation, low CTE & high modulus of Pre-A and MC-B can get better warpage performance. MC Simulation model Pre-mold
22 DOE for Warpage Performance Screen DOE Result Leg Pre mold Type Compound Type Warpage Performance Criterion Max Min Avg Stv Cpk 1 Pre-A MC-A Pre-A MC-B Pre-B MC-A Pre-B MC-B Pre-C MC-A Pre-C MC-B MC (thicker) Pre-mold Base on DOE result, MC-B can get better warpage performance than MC-A (which is aligned with the simulation data) since MC is much thicker than Pre-mold.
23 High Temp Shadow Moire Test Package information: Warpage measurement: Package size 13x13 mm 2 Device Name xxxx Sign direction SPEC: HT <=80um (=3.1mils) RT <=100um (=4mils) Smiling (+) Crying (-) Item w/ 8mil die w/ 12mil die Test Result The result can meet criteria: < +/-4 mils (R/T) and <3.1mils(H/T) after selecting Pre-A(as pre-mold) and MC-B(mold compound).
24 Board Level Reliability Test (for PP+S/M substrate) Solder joint crack Solder joint crack Test Result The Drop test passed >30X, and TCT test passed >1000X
25 Board Level Reliability Test (for Pre-Mold substrate) Solder crack Solder crack Test Result The Drop test passed >30X, and TCT test passed >500X Need to improve TCT performance!!!
26 Board Level TCT Improvement Using Different Solder Ball for TCT Test Improvement Type of Solder Ball A (Data1) B (Data2) Baseline C (Data3) Composition Ball-A (higher Ag% & dopping) Ball-B Ball-C First Failure Characteristic Life Failure mode (Solder Crack) Significant TCT capability improvement by using ball-a of solder ball with higher Ag% w/ Bi & Ni doping (compared with ball-b PoR).
27 Using Different Solder Ball for Drop Test Board Level Drop Test Type of Solder Ball A (Data1) B (Data2) C (Data3) Composition Ball-A (higher Ag% & dopping) Ball-B Baseline Ball-C First Failure Characteristic Life Failure mode (Solder Crack) Using Ball-A has a little worse drop performance than ball B & C, but still meet criteria.
28 Performance in Real Product Device Information: Device: Application Processor Package: 12*12~15*15mm 2 Quality check item _PASS Item Measured Method Criteria Unit Wire-pull WP tester >3 g Ball-shear BS tester >8 g Ball- size Microscope 500X 38+/-2 um Al splash Microscope 500X <43 um Ball -thickness Microscope 500X 8+/-2 um Cratering Microscope 200X Not allow Crack IMC Microscope 500X >80% 2 nd Level Test Drop test 30 times PASS TCT 1000 PASS BOM Substrate : Trace/Space 25/35um Bonding Wire : 0.7mil CuPd & Ag wire Compound : XXXX Solder Ball : XXXX FT Result FT yield is compatible PASS on-board speed test Reliability Test Items MSL : Level 3a (60 / 60%RH / 40hrs) uhast 96/192, PASS (45/45 units) TCT 1000, PASS (45/45 units) HTSL 1000, PASS (45/45 units)
29 Outline Introduction of Embedded Technology Package Features & KEY Drivers Challenges & its Solutions Future Developing Roadmap Conclusions
30 Package Roadmap Performance Wire Bond Technology More Dies, Mult-Pkg Package Development Hybrid type(wb+fc) High Thermal FC type Ag alloy Wire CuPd Wire Single Die Stacked Die or Side-by-Side 1.2 mm 1.0 mm 0.8/0.7 mm Small Form Factor Package Height Production Available 2013~2015 Roadmap: Wire Bond Flip Chip Hybrid (Wire bond + Flip Chip) PKG Structure: Single Die Stacked Die or Side-by-Side Hybrid or High Thermal Thickness Reduction: 1.2mm 1.0mm 0.8mm
31 FC Type - Test Vehicle Package Dimension: Package size: 12*12~15*15 mm 2 Mold thickness: 0.45mm Ball stand off height: 0.18mm Substrate thickness: 0.12mm Bump pitch : 105um Substrate BOM: Bump composition: Cu pillar Ball size /ball pitch : 0.25 / 0.4mm Substrate
32 FC Type - Test Vehicle Inline Assembly Process Checking Items Criteria Sample Size Result Non-wetting Not allow 100% Pass Die Bond Stand-off Height ±10% 4pcs/Lot Pass Accuracy ±15um 4pcs/Lot Pass Bleeding on chip <1.0mm 100% Pass Fillet Height 1/2 chip thk. 100% Pass Under-fill Void 1% chip area 100% Pass De-lamination Not allow 100% Pass Strip war-page <4mm 100% Pass Molding De-lamination Not allow 100% Pass Reliability Test Condition Read point Judge Method Result MSL3 /260 Post reflow 3X SAT ; O/S Pass TCT (-65~150 ) 500X O/S test Pass 1000X O/S test Pass HAST ( 130 / 85% RH ) 168hrs O/S test Pass HTSL (150 ) 1000hrs O/S test Pass Drop test 30X O/S test Pass FC Type -TV Internal Qualification PASS. X X-ray top view X-Section (0hr) X & Y-direction Y 32
33 FC Type PKG Benchmark PKG Structure FCCSP FC type FO Ball I/O Body size 12*12 12*12 12*12 POD Trace L/S (um) 25 / / / 10 Substrate layer 2L 2L 2L Min. PKG Height (mm) Performance Ranking Electrical Thermal Dissipation Cost Ranking High Low Low-Medium FC Type can provide the competitive device performance with lower cost benefits.
34 Outline Introduction of Embedded Technology Package Features & KEY Drivers Challenges & its Solutions Future Developing Roadmap Conclusions
35 Conclusions PKG Warpage performance can be improved by selecting the mold compounds or Pre-preg material with the fit properties(ie. CTE or Modulus). Board level reliability tests can be obviously improved by fit solder ball types. As a low cost PKG and small form factor solution, a PKG with routable embedded trace and coreless substrate features has been well demonstrated in both of wire-bond and flip-chip PKG solutions. More work on FC type PKG with finer pitch line width & space.
36 Solution Providing Innovative Leader Contact Information: 藍章益
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