Partners from RF to Light

Transcription

1 Space_HiRel brochure_051316_final_space_hirel brochure_ /22/16 1:44 PM Page 1 Product Selection Guide Space & High-Reliability

2 Partners from RF to Light MACOM continues to build upon our legacy of providing high-reliability semiconductor products to the Aerospace and Defense industry by adding to our product portfolio and capabilities with high-reliability semiconductors for the military, defense, satellite and aerospace industries. Products include rectifiers, switching diodes, Zener diodes, temperature compensated Zeners, current regulators, transient voltage suppressors, silicon controlled rectifiers, small signal and power transistors, JANHC and JANKC qualified chips. MACOM also offers customer-specific design capabilities. Environmental screening is available on most products. Additionally, we have expertise in replacement designs for obsolete or discontinued products. Our applications engineering support team is responsive, flexible, innovative, and ready to help you with your next project. Additional product information can be found on our website at Contact our worldwide sales offices, authorized representatives, and industry-leading distributors to request samples, test boards, and application support. All contacts are listed on our website at: Copyright 2016, MACOM Technology Solutions Inc. All Rights Reserved. This Product Selection Guide is provided by MACOM as a service to its customers and may be used for informational purposes only by the customer. MACOM assumes no responsibility for errors or omissions in the Guide. MACOM and its affiliates reserve the right to change any specification, designs, models and other information contained herein without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts, incompatibilities, or other difficulties arising from future changes to its documentation, products, specifications and product descriptions. The products listed herein are subject to US Export Controls set forth by the Arms Export Control Act and the Export Administration Act.

3 Space & High-Reliability Contents Space & Hi-Rel > General Purpose Gain Block Hybrid Amplifiers > Low Noise Hybrid Amplifiers > Mixers > Switches: SPDT > Power Dividers > Rad Hard Transistor Chips > Zener Diodes: 1N6309 to 1N6349 > Switching Diodes Quality & Reliability > MIL-PRF Element Evaluation for Passive Products > MIL-PRF Element Evaluation for Semiconductor Die > MIL-PRE % Environmental Screening Semiconductor Packaged Diodes > MIL-PRF Group B Conformance Inspection > MIL-PRF Group C Conformance Inspection (all levels) > MIL-PRF % Environmental Screening Hybrid Devices & MMICs > MIL-PRF Group B Performance Inspection > MIL-PRF Group C Performance Inspection (all levels) > MIL-PRF Group D Performance Inspection > MIL-STD-750 Test Methods Diodes for Hi-Rel Applications > Zener Diodes: 1N to 1N > Zener Diodes: 1N746A-1 to 759A-1, 1N4307A-1 to 1N4372A-1 > Zener Diodes: 1N957B-1 to 1N986B-1 > Low Noise Zener Diodes: 1N5518B-1 to 1N5546B-1 > TC Zener Diodes: 1N to 1N > TC Zener Diodes: 1N821-1 to 1N Diodes for Hi-Rel Applications (continued) > Switching Diodes: 1N3600, 1N > Switching Diodes: 1N914, 1N > Switching Diodes: 1N6638 t0 1N6643 > Switching Diodes: 1N6638US to 1N6643US > Switching Diodes: 1N4531 > Switching Diodes: 1N > Current Regulator Diodes: 1N to 1N5314-1, 1N to 1N > Zener Diode Chip Series: CD5518B to CD5546B > Zener Diode Chip Series: CD4614 to CD4627 to CD5546B > Zener Diode Chip Series: CD5518B to CD5546B > Zener Diode Chip Series: CD746A to CD759A CD4370A to CD4372A > Zener Diode Chip Series: CD957B to CD986B > TC Zener Diode Chip Series: CD4565 to CD4584A > Ultrafast Rectifier Diode Chips: CD5802, CD5804 & CD5806 > Ultrafast Rectifier Diode Chips: CD5807, CD5809 & CD5811 > Silicon Switching Diode Chips: CD914, CD4148, CD4531, CD6642 & CD4454 > Silicon Switching Diode Chips: CD3600, CD4150, CD4153 & CD6640 Transistors for Hi-Rel Applications > NPN Transistors > NPN Rad Hard Small Signal Transistors > PNP Transistors > Silicon Controlled Rectifiers Diode Packaging Transistor Packaging

4 Space_HiRel brochure_051316_final_space_hirel brochure_ /22/16 1:44 PM Page 4 Space & High-Reliability A Spectrum of Aerospace and Defense Solutions Discrete components, MMICs, and integrated modules MACOM continues to build upon our legacy of providing high-reliability semiconductor products to the Aerospace and Defense industry by adding to our product portfolio and capabilities. MACOM s standard line of RF and microwave components provides solutions to meet the requirements commonly found on airborne applications, high MTBF ground-based equipment, and space applications. From our DLA-Certified and US Trusted Foundry in Lowell, Massachusetts, to our QML-Certified facility in Lawrence, Massachusetts where QPL JAN, JANTX, JANTXV, and JANS standard products are produced we continue to improve our ability to provide the highest quality aerospace and defense products. The Lawrence facility is also an environmental test center of excellence, as they continue to expand their list of DLA Lab Suitability tests and inspections. When program screening requirements call for more than MACOM s standard catalog screening, custom screening programs can be created by adding screening options or by generating a program specific sequence. MACOM s Space & High-Reliability Evolution Watkins Johnson Company/Stellex Microwave Systems/Tyco Electronics/Anzac/ RHG/Phoenix Microwave/Metelics/Micrometrics/Hi-Rel Components & MACOM 1960s > Pioneered production of TWT s for Pioneer, Voyager, and DSCS satellites 1970s > First solid state flight qualified production amplifiers and mixers 1980s / 1990s / through today > Participated in more than 85 programs (USA & International) > Provided hundreds of space qualified solid state space component models High-Reliability Catalog Screened Products > 40+ year history of proven Hi-Rel manufacturing processes supporting both thin film & solder circuit assemblies > Same proven manufacturing processes as used in equivalent component designs for custom military and space programs > Long established cost effective standardized screening programs for catalog products available in a variety of hermetically sealed metal package styles > Available for screening: hybrid amplifiers, hybrid mixers, switches, diodes > MACOM has an extensive in-house environmental screening capability > US Screening Lab to perform specific environmental test requirements > Working to expand our partner network > Custom environmental screening plans available for hermetically-sealed, packaged products (MIL-PRF-19500, MIL-PRF-38534, MIL-DTL B, MIL-STD-202, etc) Please contact your local sales representative to discuss any environmental screening options 2

5 Product Screening Programs Manufacturing & Screening Flow Chart Customer Specific High-Reliability Programs Internal & Screening Partners Group D Test Transistor Wafer Qualification Test Lot Kit Parts, Traceability, & Documentation Additional Screening Labs Assembly 100% Preseal Electrical Test 100% Non-Destruct Bond Pull Assembly & Quality Assurance Process Controls 100% Production Internal Visual 100% Quality Assurance Internal Visual Customer Source Inspection > Standard catalog environmental screening plans > Customer specific environmental screening plans Standard Requirements Supported > ESA / ESCC Specifications > MIL-PRF Performance/ General Specification for Hybrid Microcircuits > MIL-PRF Performance/ General Specification for Integrated Circuits > MIL-PRF General Specification for Semiconductor Devices > MIL-DTL General Specification for Radio Frequency Mixer Stages > MIL-STD-883 Test Methods > MIL-STD-750 Test Methods > MIL-STD-202 Test Methods > Customer Source Control Drawings Seal & Print Stabilization Bake Temperature Cycle Constant Acceleration Fine & Gross Leak Seal Tests PND Test Radiographic Inspection Pre Burn-In Electrical Test Burn-In Final Electrical & Group A Test with Quality Assurance Monitor Delta Evaluations External Visual PDA Evaluation Group B & C Tests Final Quality Assurance Inspection Customer Source Inspection Ship Hardware with Data Packet 3

6 Space & Hi-Rel General Purpose Gain Block Hybrid Amplifiers Part Min Frequency Max Frequency Gain OIP3 Number (MHz) (MHz) (db) (dbm) Package 4 SMPA SMT EA TO-5 A TO-8 CA Connectorized-SMA SMA SMT A TO-8 CA Connectorized-SMA A TO-8 SMA SMT A TO-8 EA TO-5 SMA SMT A TO-8 CA Connectorized-SMA AMC-151-SMA Connectorized-SMA SMRA SMT SMA SMT A TO-8 EA TO-5 A TO-8 A TO-8 SMA SMT A TO-8 A TO-8 SMA SMT SMA SMT RA TO-8 A TO-8 A TO-8 CA Connectorized-SMA CRA Connectorized-SMA SMA SMT AMC-146-SMA Connectorized-SMA MAAM SPA SMTO-8 PA TO-8 A TO-8 SMA SMT SMA SMT A TO-8 RA TO-8 SMRA SMT PA TO-8 CRA Connectorized-SMA A TO-8 MAAM CPA Connectorized-SMA MAAM A TO-8 SMA SMT A TO-8 CA Connectorized-SMA A TO-8 SMA SMT A TO-8 SMA SMT

7 Space & Hi-Rel General Purpose Gain Block Hybrid Amplifiers (continued) Part Min Frequency Max Frequency Gain OIP3 Number (MHz) (MHz) (db) (dbm) Package A TO-8 SMA SMT AMC-184-SMA Connectorized-SMA A TO-8 AMC-180-SMA Connectorized-SMA AMC-145-SMA Connectorized-SMA AM-177-PIN TO-8 CA Connectorized-SMA CA Connectorized-SMA CRA Connectorized-SMA CRA Connectorized-SMA CA Connectorized-SMA SMA SMT RA TO-8 SMRA SMT SMA SMT A TO-8 A TO-8 SMA SMT RA TO-8 A TO-8 SMA SMT CA Connectorized-SMA A TO-8 SMRA SMT AMC-155-SMA Connectorized-SMA CA Connectorized-SMA CA Connectorized-SMA SMA SMT SMA SMT A TO-8 A TO-8 CA TO-8 A TO-8 SMA SMT A TO-8 SMA SMT SMA SMT CA Connectorized-SMA SMA SMT A TO-8 A TO-8 A TO-8 SMA SMT CA Connectorized-SMA CA Connectorized-SMA A TO-8 CA Connectorized-SMA SMA SMT SMA SMT A TO-8 SMA SMT 5

8 Space & Hi-Rel General Purpose Gain Block Hybrid Amplifiers (continued) Part Min Frequency Max Frequency Gain OIP3 Number (MHz) (MHz) (db) (dbm) Package SMPA SMT SMA SMT A TO-8 A TO-8 CA Connectorized-SMA CRA Connectorized-SMA SMA SMT RA TO-8 A TO-8 A TO-8 SMRA SMT SMA SMT SMPA SMT CA Connectorized-SMA A TO-8 SMA SMT A TO-8 SMA SMT A TO-8 CA Connectorized-SMA SMA SMT CA Connectorized-SMA MAAM CA Connectorized-SMA A TO-8 SMA SMT PA TO-8 SMPA SMT A TO-8 SMA SMT CPA Connectorized-SMA RA TO-8 SMPA SMT PA TO-8 SMRA SMT SMRA SMT RA TO-8 AM R380/CR15 AM CR-15 AM R380/CR15 AM R380/CR15 Low Noise Hybrid Amplifiers Part Min Freq Max Freq Gain Noise Figure OIP3 Number (MHz) (MHz) (db) (ma) (dbm) Package AMC-162-SMA Connectorized-SMA AMS-162-PIN SF-1 AM-162-PIN TO-8 A TO-8 SMA SMT 6

9 Space & Hi-Rel Low Noise Hybrid Amplifiers (continued) Part Min Freq Max Freq Gain Noise Figure OIP3 Number (MHz) (MHz) (db) (ma) (dbm) Package MAAM CA Connectorized-SMA A TO-8 SMA SMT A TO-8 AMC-119-SMA Connectorized-SMA A TO-8 SMA SMT CA Connectorized-SMA SMA SMT SMA SMT SMA SMTO-8 A TO-8 A TO-8 A TO-8 A TO-8 SMA SMT CA Connectorized-SMA SMA SMT A TO-8 CA Connectorized-SMA A TO-8 A TO-8 SMA SMT SMA SMT CA Connectorized-SMA A TO-8 A TO-8 A TO-8 SMA SMTO-8 SMA SMT A TO-8 SMA SMTO-8 CA Connectorized-SMA A TO-8 SMA SMT PAW SOT115J CA Connectorized-SMA SMA SMT SMA SMT A TO-8 A TO-8 MAAM A TO-8 EA TO-5 PAW SOT115J CA Connectorized-SMA SMA SMT A TO-8 A TO-8 A TO-8 CA Connectorized-SMA CA Connectorized-SMA CA Connectorized-SMA 7

10 Space & Hi-Rel Low Noise Hybrid Amplifiers (continued) Part Min Freq Max Freq Gain Noise Figure OIP3 Number (MHz) (MHz) (db) (ma) (dbm) Package SMA SMT A TO-8 SMA SMT A TO-8 A TO-8 A TO-8 A TO-8 MAAM CA Connectorized-SMA SMA SMT SMA SMT MAAM SMA SMTO-8 CA Connectorized-SMA MAAM CA Connectorized-SMA CA Connectorized-SMA AMC-147-SMA Connectorized-SMA AMC-143-SMA Connectorized-SMA AM-131-PIN TO-8 AMC-123-SMA Connectorized-SMA MAAM SMA SMTO-8 A TO-8 CA Connectorized-SMA CA Connectorized-SMA A TO-8 SMA SMT SMA SMT SMA SMT SMA SMT EA TO-5 A TO-8 SMA SMT A TO-8 SMA SMT A TO-8 A TO-8 A TO-8 SMA SMT SMA SMT A TO-8 A TO-8 A TO-8 MAAM CA Connectorized-SMA SMA SMTO-8 AM-160-PIN FP-9 SMA SMT CA Connectorized-SMA A TO-8 A TO-8 SMA SMT A TO-8 SMA SMT CA Connectorized-SMA 8

11 Space & Hi-Rel Low Noise Hybrid Amplifiers (continued) Part Min Freq Max Freq Gain Noise Figure OIP3 Number (MHz) (MHz) (db) (ma) (dbm) Package SMA SMT SMA SMT A TO-8 A TO-8 A TO-8 A TO-8 CA Connectorized-SMA SMA SMT SMA SM AMC-176-SMA Connectorized-SMA A TO-8 SMA SMT A TO-8 AMC-182-SMA Connectorized-SMA SMA SMT CA Connectorized-SMA A TO-8 SMA SMT MAAM SMA SMTO-8 SMA SMT CA Connectorized-SMA A TO-8 MAAM CA Connectorized-SMA SMA SMT A TO-8 CA Connectorized-SMA A TO-8 SMA SMT A TO-8 CA Connectorized-SMA SMA SMT AM-153-PIN TO-8 PA TO-8 CPA Connectorized-SMA SMPA SMT CA Connectorized-SMA SMA SMT SMA SMT A TO-8 A TO-8 CA Connectorized-SMA A TO-8 A TO-8 SMA SMT MAAM A TO-8 MAAM CA Connectorized-SMA MAAM SA SMTO-8 CA Connectorized-SMA CA Connectorized-SMA SMA SMT CA Connectorized-SMA 9

12 Space & Hi-Rel Low Noise Hybrid Amplifiers (continued) Part Min Freq Max Freq Gain Noise Figure OIP3 Number (MHz) (MHz) (db) (ma) (dbm) Package SMA SMT A TO-8 SMA SMT A TO-8 A TO-8 SMA SMT A TO-8 SMA SMT A TO-8 A TO-8 SMA61 C SMT CA Connectorized-SMA SMA SMTO-8 Mixers Part Min Freq RF/RO Max Freq RF/RO Min Freq IF Max Freq Number (MHz) (MHz) (MHz) (MHz) Package 10 M6D Relay Header MAC-50-PIN TO-5 MDS-222-PIN SF-1 SM6D SMT M6E Relay Header M9BC Relay Header MAC-51-PIN TO-5 MD-108-PIN RH-3 MD-161-PIN FP-2 MDS-223-PIN SF-1 SM6V SMT M1H SMA M6EH Relay Header SM6EH SMT M2E TO-8 M2EC SMA SM2E SMT M2AC SMA M4A Flatpack-SMT M9H TO-8 M9HC SMA MD-148-PIN FP-2 MD-149-PIN FP-2 MD-149-PINN FPO2 MD-160-PIN RH-3 MDS-148-PIN SF-1 MDS-149-PIN SF-1 MDS-158-PIN SF-1 SM4A SMT SM4B SMT M2B TO-8 M2BC SMA M2TC SMA SM4G SMT

13 Space & Hi-Rel Mixers (continued) Part Min Freq RF/RO Max Freq RF/RO Min Freq IF Max Freq Number (MHz) (MHz) (MHz) (MHz) Package MD-123-PIN FP-2 M4TH Flatpack-SMT M8T TO-8 M8TC SMA M8TH TO-8 M8THC SMA SM4T SMT SM4T SMT SM4TH SMT M2G TO-8 M2GC SMA MD-169-PIN FP-2 MD-189-PIN FP-2 MDC-169-SMA C-7 MDS-169-PIN SF-1 MDS-189-PIN SF-1 MD-179-PIN FP-2 MDC-179-SMA C-7 M8H TO-8 SM5T SMT SM5T SMT SM5TH SMT M63C SMA MZ6310C SMA M8H TO-8 M8HC SMA MDC-162-SMA C-2 MY Versapac MY63C SMA M63H Minpac M63HC SMA MY63H Versapac MY63HC SMA M76H Minpac M76HC SMA MY76H Versapac MY76HC SMA M Minpac M76C SMA MY Versapac MY76C SMA MY Versapac MY84C SMA M77C SMA MY Versapac M14A SMA MY77C SMA M67C SMA M50A Minpac M50AC SMA M Minpac M74C SMA 11

14 Space & Hi-Rel Mixers (continued) Part Min Freq RF/RO Max Freq RF/RO Min Freq IF Max Freq Number (MHz) (MHz) (MHz) (MHz) Package M8H TO-8 SM5T SMT SM5T SMT SM5TH SMT M63C SMA MZ6310C SMA M8H TO-8 M8HC SMA MDC-162-SMA C-2 MY Versapac MY63C SMA M63H Minpac M63HC SMA MY63H Versapac MY63HC SMA M76H Minpac M76HC SMA MY76H Versapac MY76HC SMA M Minpac M76C SMA MY Versapac MY76C SMA MY Versapac MY84C SMA M77C SMA MY Versapac M14A SMA MY77C SMA M67C SMA M50A Minpac M50AC SMA M Minpac M74C SMA M79C SMA M79H Minpac M79HC SMA M80C SMA M Minpac M83C SMA M Minpac M85C SMA M86C SMA M88C SMA M88H Minpac M88HC SMA M89C SMA M93C SMA MY Versapac MY82C SMA MY83H Versapac MY83HC SMA 12

15 Space & Hi-Rel Mixers (continued) Part Min Freq RF/RO Max Freq RF/RO Min Freq IF Max Freq Number (MHz) (MHz) (MHz) (MHz) Package MY Versapac MY85C SMA MY Versapac MY88C SMA MY88HC SMA MY Versapac MY89C SMA MY Versapac MY93C SMA MZ Versapac MZ7407C SMA MZ Versapac MZ7410C SMA MZ Versapac MZ7420C SMA MZ8810C SMA MZ Versapac MZ Versapac MZ9310C SMA MZ Versapac MZ9313C SMA M87C SMA MY Versapac MY87C SMA M51C SMA M52C SMA MY Versapac MY51C SMA MY Versapac MY52C SMA M50C SMA M53C SMA MY Versapac MY50A Versapac MY50AC SMA MY50C SMA MZ Versapac MZ5010C SMA Switches: SPDT Part Min Freq Max Freq Insertion Loss Isolation Input IP3 Number (MHz) (MHz) (db) (db) (dbm) Package SW-313-PIN CR-2 SW-226-PIN CR-2 SW-227-PIN CR-2 SW-228-PIN CR-2 13

16 Space & Hi-Rel Power Dividers Part Min Freq Max Freq Channels Amplitude Phase Balance Isolation Max Input Number (MHz) (MHz) (#) Balance (db) ( ) (db) Power (dbm) Package M3H-50-PIN TO-5 DS-310-PIN FP-5 M3V-50-PIN TO-5 DS-113-PIN FP-2 DSS-113-PIN SF-1 DS-318-PIN RH-1 DS-109-PIN FP-2 DSS-333-PIN SF-1 DS-319-PIN TO-8 DS-112-PIN TO-5 DS-328-PIN TO-8 DSS-327-PIN FP-2 DSS-333-PIN FP-2 DS-323-PIN FP-3 DS-324-PIN FP-5 DS-331-PIN TO-8 DS-313-PIN FP-2 DSS-313-PIN SF-1 DS-332-PIN TO-8 Rad Hard Transistor Chips (SUS) V CEO V CBO I C (max) h I C / V CE C OBO Type Slash Sheet (amps) (min/max@a/v) (pf) f T (MHz) JANKCDR2N2221A JANKCCR2N2222A JANKCCR2N / JANKCE2N5152* / JANKCE2N5154* / JANKCD2N5151* / JANKCD2N5153* / JANKCCR2N JANKCE2N5339* / JANKCDR2N / *Chips qualified to M, D, P, L, and R RAD levels All chips are also available in JANHC quality level CD Schottky Chips Working Peak Average Max Reverse Max Reverse Max Forward Max Forward Max Capacitance Part Reverse Rectified Leakage Current Leakage Current Voltage Voltage Capacitance Number Voltage Forward V V (pk) 5 V dc F 1 MHz V RWM I O I R1 I R2 V F1 V F2 C T (A) (ma) (ma) (pf) CD CD CD JANHC, JANKC1N JANHC, JANKC1N

17 Space & Hi-Rel Zener Diodes: 1N6309 to 1N6349, available in JAN, JANTX, JANTXV, and JANS per MIL-PRF-19500/533 Nominal Zener Voltage Zener Test Max Zener Reverse Voltage Max Reverse Max Noise Density Max Zener Type V Z (Note 2) Current I ZT Impedance Z zt V R Current I 2 N ua Current, IZM (ma) (ohms) (ua) uv/ HZ 1N6309, 1N6309US N6310, 1N6310US N6311, 1N6311US N6312, 1N6312US N6313, 1N6313US N6314, 1N6314US N6315, 1N6315US N6316, 1N6316US N6317, 1N6317US N6318, 1N6318US N6319, 1N6319US N6320, 1N6320US N6321, 1N6321US N6322, 1N6322US N6323, 1N6323US N6324, 1N63240US N6325, 1N6325US N6326, 1N6326US N6327, 1N6327US N6328, 1N6328US N6329, 1N6329US N6330, 1N6330US N6331, 1N6331US N6332, 1N6332US N6333, 1N6333US N6334, 1N6334US N6335, 1N6335US N6336, 1N6336US N6337, 1N6337US N6338, 1N6338US N6339, 1N6339US N6340, 1N6340US N6341, 1N6341US N6342, 1N6342US N6343, 1N6343US N6344, 1N6344US N6345, 1N6345US N6346, 1N6346US N6347, 1N63470US N6348, 1N6348US N6349, 1N6349US Electrical specifications at TA = 250 C (unless otherwise noted) Note 1: Standard voltage tolerance is +/- 5%. Tighter tolerances are availble. C suffix denotes +/- 2%; D suffix denotes +/- 1% Switching Diodes IFSM IFSM VF1 (max) VF2 (max) IR1 IR2 C t rr (max) VRWM IO tp=1s tp=1 us IF=200 ma dc IF=100 ma dc VR=125V VR=125V, VR=0, IF=10 ma, Type 150 C f=1 MHz VR=35 V (ma) (A) (na) (ua) (pf) (us) 1N N3595US N3595A

18 Quality & Reliability MACOM s Commitment to Quality Engineering, manufacturing, and quality assurance partnerships at all levels MACOM Technology Solutions is committed to quality through interactions between engineering, manufacturing, and quality assurance groups at design, development, manufacture, test, and environmental screening levels for all MACOM products. MACOM is firmly committed to producing and providing the highest level of quality products free of defects and deviations. Our primary goal is to achieve consistently high standards and customer satisfaction based on internal and customer expectations and requirements by: > Documenting procedures and specifications used in the manufacturing, testing, and environmental screening of all MACOM products > Calibrating equipment with standards traceable to National Institute of Standards and Technology (NIST) > Assuring all incoming materials conform to documented specifications > Verifying process controls at fabrication, manufacturing, and test levels > Performing environmental screening and conformance inspection up to and including space level per MIL-PRF-19500, MIL-PRF-38534, MIL-PRF-38535, and/or customer specific requirements Element Evaluation, Environmental Screening, and Conformance Inspection > MACOM provides standard high-reliability test programs for our semiconductor and thin film products. Element evaluations are performed in accordance with MIL-PRF Class H and Class K levels for passive components and semiconductor die. Environmental Screening and Conformance Inspection are performed in accordance with MIL-PRF JAN, JANTX, JANTXV, and JANS requirements and/or per customer specified requirements. > MMIC and Hybrid products use the standard process flows for class H and K devices > Table 1 and Table 2 represent MACOM standard element evaluation, environmental screening, and conformance inspection testing. Certain process steps may be omitted or modified due to device performance restraints, packaging, or screening levels. Please note that the tables are provided for reference. Actual CI and PI flow can be modified to meet mission requirements. MACOM reserves the right to modify these flows as appropriate. All MACOM environmental test flows are based on the appropriate MIL-PRF for the product. Only our Lawrence facitily has QLP product and those products are produced and sold to separate slash sheets. MACOM s Lowell and Lawrence, Massachusetts facilities are ISO9001:2008 registered. A copy of our ISO certificates are available upon request. 16

19 Quality & Reliability Table 1: MIL-PRF Element Evaluation for Passive Products Step K Class H Process Conditions Comments 1 Subgroup 1 2 X X Die Electrical Rs (resistors), Vr, Cj (capacitors) 100% electrical, remove rejects 3 Subgroup 2 4 X X Die Visual MIL-STD-883, Meth % visual inspection, remove rejects 5 Subgroup 3 6 X Temperature Cycling MIL-STD-883, Meth 1010, Cond C 10 cycles, t+10 minutes min Ta=-65 C to +150 C 7 X Constant Acceration MIL-STD-883, Meth 2001, Cond D 20,000Gs, Y1 direction 8 X Aging (capacitors only) MIL-STD-883, Meth 1015, Cond A t=240 hrs min, Ta=+125 C, Vr= V 9 X X Visual Inspection MIL-STD-883, Meth X X End-point Electricals Rs (resistors), Vr, Ir, Ct (capacitors) Read & record 11 Subgroup 4 12 X X Bond Strength MIL-STD Au wire or equivalent Meth 2011 Bond Strength=3G min 10 (0) wires or 20 (1) wires Table 2: MIL-PRF Element Evaluation for Semiconductor Die Step K Class H Process Conditions Comments 1 Subgroup 1 2 X X Die Electrical Per catalog data sheet/device 100% electrical specification 3 Subgroup 2 4 X X Die Visual MIL-STD-883, Meth % visual inspection 5 Subgroup 3 6 X X Internal Visual MIL-STD-883,Meth 2010 or MIL-STD-750, Meth 2072 or Subgroup 4 8 X Temperature Cycling MIL-STD-883, Meth 1010, Cond C 10 Cycles, t= 10 minutes min, Ta= -65 C to +150 C 9 X X Constant Acceleration MIL-STD-883, Meth 2001, Cond D 20,000 g Y1 direction 10 X X Pre Burn-In Electrical Go/No Go 11 X HTRB MIL-STD-883, Meth 1015, Cond A t= 240 hrs min, Ta= +125 C, Vr= V 12 X X Post Burn-In Electrical Go/No Go 13 X Steady State Life MIL-STD-883, Meth 1005, Cond B t= 1000 hrs min, Ta= +125 C, Vr= V or (when conditions provided) If= ma 14 X X Final Electricals Read & Record 15 Subgroup 5 16 X X Bond Strength MIL-STD-883, Meth (0) wires or 20 (1) wires 17 Subgroup 6 18 X SEM MIL-STD-883, Meth 2018 or MIL-STD-750, Meth

20 Quality & Reliability MIL-PRF % Environmental Screening Semiconductor Packaged Diodes Step Process Conditions Comments JANS JANTXV JANTX 1 Visual Inspection MIL-STD-750, Meth 2073 Performed at chip level prior X when N/A to assembly specified 2 Pre-cap Visual MIL-STD-750, Meth 2074 X X 3 Temperature Storage MIL-STD-750 Meth 1032 t= hrs., Ta= +150 C X X X 4 Temperature Cycling MIL-STD-750 Meth 1051, Cond F 20 Cycles, t(ext)= 10 min X X X Ta= -65 C to +150 C 5 Constant Acceleration MIL-STD-750 Meth ,000 g min Y1 axis only X X X (Au ribbon/wire bond only) 6 PIND MIL-STD-750 Meth 2052, Cond A Shock Pulse= g, X Noise= +20 mv peak to peak 7 FIST / BIST MIL-STD-750 Meth 2081(FIST), Acc=_, Pulse=_, t=_ms, f=_hz X (axial lead diodes only) 2082(BIST) _blows in direction, V=_V,I=_A 8 Fine Leak MIL-STD-750 Meth 1071, Cond H 5x10-8 atm cc 3 /s max X X 9 Gross Leak MIL-STD-750 Meth 1071, Cond C X X 10 Intial Electricals Ir (or as specified) Read & Record serialize diode X X X 11 HTRB 1 MIL-STD-750 Meth 1038, Cond A t= 48 hrs min, Ta= +150 C, X X X Vr= V 12 Interim Electricals Ir (or as specified) Read & Record within 16 hrs X X X from removal of applied bias 13 Delta HTRB Delta Ir= + _na or 100% Read & Record delta Ir from X X X Measurements whichever is greater Initial-to-Interim electrical test 14 PDA 2 PDA = 5% max, PDA = (qty rej delta Ir/qty acc X X X Actual PDA = delta Ir) x Forward Burn In 1 MIL-STD-750 Meth 1038, t= 240 hrs min, Ta= + C, X X X Cond B If= ma 16 Final Electricals Ir (or as specified) Read & Record w/in 96 hrs. from X X X removal of applied bias 17 Delta Forward B Delta Ir= + na or 100% Read & Record delta Ir from X X X Measurements whichever is greater Interim to Final electrical test 18 PDA 2 PDA = 5% max, PDA = (qty rej delta Ir/qty acc X X X Actual PDA = delta Ir) x Fine Leak MIL-STD-750 Meth 1071, Cond H 5x10-8 atm cc 3 /s max X 20 Gross Leak MIL-STD-750 Meth 1071, Cond C X 21 Radiography MIL-STD-750, Meth views, X and Y X 22 External Visual MIL-STD-750 Meth 2071 X Inspection Notes: 1 Burn-In methods and conditions to be provided by customer and agreed upon by engineering. 2 PDA for JANTX & JANTXV level screening is +10%; PDA for JANS level screening is +5%. 18

21 Quality & Reliability MIL-PRF Group B Conformance Inspection Group B Inspection Sample Size 1, 2 Conditions Comments JANS JANTXV JANTX Subgroup 1 4 Electrical rejects may be used Physical Dimensions 22 (8) MIL-STD-750 Meth 2066 Specified case outline dimensions X Subgroup 2 4 Electrical rejects may be used Solderability 15 (6) leads MIL-STD-750 Meth 2026 Leads from a minimum of X X X 3 devices shall be tested Resistance to Solvents 15 (6) MIL-STD-750 Meth 1022 X X X Subgroup 3 4 Temperature Cycling 22 (6) MIL-STD-750 Meth 1051, 45 Cycles including screening, X X X Cond F text = 10 min Ta= -65 C to +150 C (JANS 100 cycles) Thermal Shock 22 (6) MIL-STD-750 Meth 1056, 10 cycles (JANS 25 cycles) X X X Cond B (glass axial lead only) Surge 22 (6) Only when specified X X X Fine Leak 22(6) MIL-STD-750, Meth 1071, 5x10-8 atm cc 3 /s max X X X Cond H Gross Leak 22 (6) MIL-STD-750 Meth 1071, X X X Cond C Electrical Tests 3 22 (6) Read & Record X X X Intermittent 22 (12) MIL-STD-750 Meth 1037, Submit to 6000 cycles to satisfy X X Operating Life 2000 cycles Group C Subgroup 6 requirement Electrical Tests 3 22 (12) Read & Record X X De-cap Internal Visual 6 (6) MIL-STD-750 Meth 2075 Decap devices X X X Bond Strength 22 (12) wires or MIL-STD-750 Meth 2037 Use for die shear X X X 1 (6) devices SEM 22 (12) MIL-STD-750, METH 2077 When specified X X X Die Shear 11 (6) MIL-STD-750, METH 2017 Use bond pull samples X Subgroup 4 4 Intermittent 22 (12) MIL-STD-750 Meth 1037, Submit to 6000 cycles to satisfy X Operating Life 2000 cycles Group C Subgroup 6 requirement Electrical Tests 22 (12) Read & Record satisfy X with Group C Subgroup 6 Subgroup 5 4 Accelerated Steady 22 (12) MIL-STD-750, Meth 1027 t= 96 hrs., Ta= +275 C Vr= V(pk), X State Life *Schottky= Tj max, 240 hrs. lo= ma, f= Hz Electrical Tests 3 22 (12) Read & Record X Subgroup 6 4 Thermal Resistance 22 (8) MIL-STD-750 Meth 408 Read & Record X X X (Meth 3101 option JANS) High Temp Life 22 (12) MIL-STD-750 Meth 1032 t= 340 hrs, Ta= T STG(MAX) N/A X X (Non-operating) Electrical Tests 3 22 (12) Read & Record N/A X X Notes: 1 Small lot sample size defined in parentheses ( ). Inspection lot quantity shall not exceed 2,500 pcs for JANTX & JANTXV Group A small lot sampling; inspection lot quantity shall not exceed 1,000 pcs for JANS Group A small lot sampling. Group B small lot sampling: inspection lot quantity shall not exceed 1,000 pcs for JANS Group B small lot sampling. 2 Electrical test parameters shall be defined by product type and specific requirements; test limits at temperature may vary from those published in this catalog. 3 Endpoint electrical tests parameters shall be defined by product type and specific requirements. 4 Test sequence may differ according to JAN screening level. 19

22 Quality & Reliability MIL-PRF Group C Conformance Inspection (all levels) Group C Inspection Sample Size 1, 2 Conditions Comments Subgroup 1 Physical Dimensions 15 (6) MIL-STD-750, Meth 2066 Subgroup 2 Thermal Shock 22 (6) MIL-STD-750 Meth 1056, Cond A Glass axial lead only Terminal Strength 22 (6) MIL-STD-750 Meth 2036, Cond E Leaded packages only, w= oz.; t= sec Fine Leak 22 (6) MIL-STD-750 Meth 1071, Cond H 5x10-8 atm cc 3 /s max Gross Leak 22 (6) MIL-STD-750 Meth 1071, Cond C Moisture Resistance 22 (6) MIL-STD-750, Meth 1021 Omit initial conditioning End-point Electricals 2 22 (6) Read & Record Subgroup 3 Shock 22 (6) MIL-STD-750 Meth 2016 Non-operating,1500G, 0.5ms, 5 blows X1, Y1, Z1 Variable Frequency 22 (6) MIL-STD-750 Meth 2056 Acceleration 22 (6) MIL-STD-750 Meth minute min, 20K g X1, Y1, Z1 End-point Electricals 2 22 (6) Read & Record Subgroup 4 Salt Atmosphere 15 (6) MIL-STD-750, Meth 1041 Electrical rejects may be used Subgroup 5 Thermal Resistance 15 (6) MIL-STD-750, Meth 4081 Read & Record Subgroup 6 Intermittent Operating Life 22 (12) MIL-STD-750, Meth 1037 Units from Group B-2000 cycle test may be used 6000 cycles to complete the 6000 cycles End-point Electricals 2 22 (12) Read & Record Bond Strength 11 wires MIL-STD-750 Meth 2037 Only when Group B units continue to satisfy Group C requirement, Read & Record Subgroup 7 Internal Water Vapor 3 MIL-STD-750, Meth devices c= 0 or 5 devices c= 1 Notes: 1 Small lot sample size defined in parentheses ( ). Inspection lot quantity shall not exceed 2,500 pcs for JANTX & JANTXV Group A small lot sampling; inspection lot quantity shall not exceed 1,000 pcs for JANS Group A small lot sampling. 2 Electrical test parameters shall be defined by product type and specific requirements; test limits at temperature may vary from those published in this catalog. 20

23 Quality & Reliability MIL-PRF % Environmental Screening Hybrid Devices & MMICs Step Process MIL-STD-883 Test Method Comments K H 1 Non Destruct Bond Pull 2023 X 2 Internal Visual 017 X X 3 Temperature Cycling 1051 Cond. C; 10 Cycles X X 4 Constant Acceleration 2001 Cond B; Y1 Only X X 5 PIND 2020 Cond A X Optional 6 Pre Burn-In Electrical Test In accordance with device specification Read & Record, serialize X X 7 Burn-In 1015 X 10 Interim Electricals In accordance with device specification Read & Record X 11 Burn-In 1015 X X 12 Final Electricals In accordance with device specification Read & Record X X 13 Fine Leak 1014 X X 14 Gross Leak 1014 X X 15 Radiography views, X and Y X 16 External Visual Inspection 2009 X X Notes: 1 Burn-In methods and conditions to be provided by MACOM. If provided by customer, MACOM reserves the right to review and approve conditions. 2 PDA for Class H is 10% or 1 device. Class K is 2% or 1 device. MIL-PRF Group B Performance Inspection Group B Inspection Sample Size 1, 2 MIL-STD-883 Test Method Comments Subgroup 1 2 (0) Physical Dimensions 2016 Subgroup 3 3 (0) Resistance to Solvents 2015 Subgroup 4 1 (0) Internal Visual and Mechanical 2014 Subgroup 5 2 (0) Bond Strength 2011 Condition C; 100 cycles Subgroup 6 2 (0) Die Shear Strength 2019 Subgroup 7 1 (0) Solderability 2003 Solder Temperature +245 C + 5 C Subgroup 8 5 (0) Fine Leak 1014 Class H only Gross Leak 1014 Class H only Notes: 1 Small lot sample size with defects allowed provided in parentheses ( ). 2. Electrical test parameters shall be defined by product type and specific requirements; test limits at temperature may vary from those published in this catalog. 21

24 Quality & Reliability MIL-PRF Group C Performance Inspection (all levels) Group C Inspection Sample Size 1, 2 MIL-STD-883 Test Method Comments Subgroup 1 5 (0) Resistance to Soldering Heat 2036 External Visual 2009 PIND 2020 Condition A Temperature Cycle 1010 Condition C; 100 cycles Mechanical shock 2002 B, Y1 direction Constant Acceleration g, Y1 direction Random Vibration 2026 Condition A Fine Leak 1014 Gross Leak 1014 PIND 2020 A, 1 pass Visual Examination 1010 Omit initial conditioning End-point Electricals 2 Read & Record Subgroup 2 5 (0) Steady State Life Test ,000 hours at +125 C or equivalent End-point Electricals 2 Read & Record Subgroup 3 3 (0) or 5(1) Internal Water Vapor 1018 Subgroup 4 2 (0 Internal Visual 2017 Wire Bond Strength 2011 Element Shear 2019 or 2027 Subgroup 5 3 (0 End-point Electricals 2 Group A-1 ESDS 3015 End-point Electricals 2 Group A-1 Notes: 1 Small lot sample size with defects allowed provided in parentheses ( ). 2 Electrical test parameters shall be defined by product type and specific requirements; test limits at temperature may vary from those published in this catalog. MIL-PRF Group D Performance Inspection Group D Inspection Sample Size 1, 2 MIL-STD-883 Test Method Comments 22 Subgroup 1 Thermal Shock 5 (0) 2016 Condition C Stabilization Bake 5 (0) C, 1 hour Lead Integrity 1 (0) 2004 Fine Leak 5 (0) 1014 Condition A or B Gross Leak 5 (0) 1014 Condition C or D Subgroup 3 Salt Atmosphere 5 (0) 1009 Condition A Subgroup 4 Metal Package Isolation 3 (0) V dc, 100 na maximum

25 Quality & Reliability Macom is qualified to perform the following MIL-STD-750 test methods Test Test Method Condition MIL-STD-750 Method Title Test Test Method Condition MIL-STD-750 Method Title 1016 Insulation Resistance 1020 ESD Test Method 1021 Moisture Resistance 1022 Resistance to Solvents 1026 Steady-State Operation Life 1027 Steady-State Operation Life (sample plan) 1031 High Temperature Life Non-Operating 1032 High Temperature Life (non-operating) 1033 A, B Reverse Voltage Leakage Stability 1037 Intermittent Operation Life 1038 A, B HTRB Burn-In & Power Burn-In 1039 A, B HTRB Power Burn-In 1040 A, B Burn-In (Thyristors Controlled Rectifiers) / Blocking Voltage Test 1041 Salt Atmosphere 1048 Blocking Life 1051 A, F, G Temp Cycling (Air-to-Air) and LN Potted Environment Stress Test 1055 Monitored Mission 1056 A, B, D Thermal Shock 1057 B Glass Cracking 1071 A, B, E, G1 Hermetic Seal 1081 Dielectric Withstanding Voltage 2005 Axial Lead Tensile Test 2006 A thru E Constant Acceleration 2017 A Die Attach Integrity (Die Shear) 2026 Solderability 2031 A, B Resistance to Soldering Heat 2036 A, E Terminal Strength 2037 D Bond Strength (Destructive Bond Pull Test) 2038 Surface Mount End Cap Bond Integrity 2052 A PIND Test 2066 Physical Dimensions 2068 Visual Inspection for NonTransparent Devices 2071 Visual and Mechanical Inspection 2072 Internal Visual Inspection (Pre-Cap) 2073 Chip and Die Visual Inspection 2074 Internal Visual Inspection 2075 Decap Internal Visual Design Verification 2078 Internal Visual For Wire Bonded Diodes and Rectifiers 2101SB DPA Procedures for Diodes (Scribe and Break only) 3001 Breakdown Voltage, Collector to Base 3011 Breakdown Voltage, Collector to Emitter 3036 Collector to Base Cutoff Current 3041 Collector to Emitter Cutoff Current 3051 Safe Operating Area 3053 Safe Operating Area (Switching) 3061 Emitter to Base Cutoff Current 3066 Base Emitter Voltage (saturated or nonsaturated) 3071 Saturation Voltage and Resistance 3076 Forward-Current Transfer Ratio 3100 Junction Temperature Measurement 3101 Thermal Impedance Testing of Diodes 3131 Thermal Impedance Testing of Transistors 3181 Thermal Resistance for Thyristors 3201 Small-Signal, Short-Circuit Input Impedance 3206 Small-Signal, Short-Circuit Forward-Current Transfer Ratio 3211 Small-Signal, Short-Circuit Reverse-Voltage Transfer Ratio 3216 Small-Signal, Open-Circuit Output Admittance 3236 Cobo Measurement 3240 Cibo Measurement 3246 Noise Figure 3251 A, B Pulse Response Measurement 3306 Frequency Response 3401 Breakdown Voltage, Gate-to-Source 3403 Gate-to-Source Voltage or Current 3405 Drain-to-Source On-State Voltage 3407 Breakdown Voltage, Drain-to-Source 3411 Gate Reverse Current 3413 Drain Current 3421 Static Drain-to-Source On-State Resistance 3423 Small-Signal, Drain-to-Source On-State Resistance 4001 Capacitance 4011 Forward Voltage 4016 Reverse Current Leakage 4021 Breakdown Voltage (Diodes) 4022 BreakdownVoltage (Voltage Regulators Diodes) and Voltage-Reference 4023 A, B Scope Display 4026 Forward Recovery, Voltage and Time 4031 A, B Reverse Recovery TRR 4051 Small-Signal Reverse Breakdown Impedance 4065 Peak Reverse Power Test 4066 A1, A2, B Test Procedure Surge Current 4071 Temperature Coefficient of Breakdown Voltage 4081 Thermal Resistance of Diodes (Forward Voltage, Switching Method) 4201 Holding Current 4206 Forward Blocking Current 4211 Reverse Blocking Current 4219 Reverse Gate Current 4221 Gate-Trigger Voltage 4226 Forward On Voltage 23

26 Diodes for Hi-Rel Applications Zener Diodes: 1N to 1N4627-1, available in JAN, JANTX, JANTXV and JANS per/435 Part Number 1 Nominal Zener 2 Voltage, V Z Zener Test Current, I ZT (µa) Max Zener 3 Impedance, Z ZT (Ohms) Max Reverse Current, I V R (µ Max Noise Density, N I ZT (µv / Hz) Max Zener DC Current, I ZM (ma) 1N4614-1, 1N4614UR N4615-1, 1N4615UR N4616-1, 1N4616UR N4617-1, 1N4617UR N4618-1, 1N4618UR N4619-1, 1N4619UR N4620-1, 1N4620UR N4621-1, 1N4621UR N4622-1, 1N4622UR N4623-1, 1N4623UR N4624-1, 1N4624UR N4625-1, 1N4625UR N4626-1, 1N4626UR N4627-1, 1N4627UR N4099-1, 1N4099UR N4100-1, 1N4100UR N4101-1, 1N4101UR N4102-1, 1N4102UR N4103-1, 1N4103UR N4104-1, 1N4104UR N4105-1, 1N4105UR N4106-1, 1N4106UR N4107-1, 1N4107UR N4108-1, 1N4108UR N4109-1, 1N4109UR N4110-1, 1N4110UR N4111-1, 1N4111UR N4112-1, 1N4112UR N4113-1, 1N4113UR N4114-1, 1N4114UR N4115-1, 1N4115UR N4116-1, 1N4116UR N4117-1, 1N4117UR N4118-1, 1N4118UR N4119-1, 1N4119UR N4120-1, 1N4120UR N4121-1, 1N4121UR N4122-1, 1N4122UR N4123-1, 1N4123UR N4124-1, 1N4124UR N4125-1, 1N4125UR N4126-1, 1N4126UR N4127-1, 1N4127UR N4128-1, 1N4128UR N4129-1, 1N4129UR N4130-1, 1N4130UR N4131-1, 1N4131UR N4132-1, 1N4132UR (table continued on page 25) 24

27 Diodes for Hi-Rel Applications Zener Diodes: 1N to 1N4627-1, available in JAN, JANTX, JANTXV and JANS per/435 (continued) Part Number 1 Nominal Zener 2 Voltage, V Z Zener Test Current, I ZT (µa) Max Zener 3 Impedance, Z ZT (Ohms) Max Reverse Current, I V R (µ Max Noise Density, N I ZT (µv / Hz) Max Zener DC Current, I ZM (ma) 1N4133-1, 1N4133UR N4134-1, 1N4134UR N4135-1, 1N4135UR Electrical T A = +25 C (unless otherwise specified). Note 1: The JEDEC type numbers shown have a ±5% tolerance on nominal Zener voltage. The suffix C is used to identify ±2%: and suffix D is used to identify ±1%. Note 2: Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25 C + 3 C. Note 3: Zener impedance is derived by superimposing on I ZT A 60 Hz rms a.c. current equal to 10% of I ZT. Zener Diodes: 1N746A-1 to 1N759A-1; 1N4307A-1 to 1N4372A-1, available in JAN, JANTX, JANTXV per /127 Part Number 1 Nominal Zener 2 Voltage V I ZT Zener Test Current I ZT (ma) Max Zener 3 Impedance Z I ZT (Ohms) Max Reverse Current, I V R (µ Max Zener Current, I ZM 1N4370A-1, 1N4370AUR N4371A-1, 1N4371AUR N4372A -1, 1N4372AUR N746A-1, 1N746AUR N747A-1, 1N747AUR N748A-1, 1N748AUR N749A-1, 1N749AUR N750A-1, 1N750AUR N751A-1, 1N751AUR N752A-1, 1N752AUR N753A-1, 1N753AUR N754A,-1, 1N754AUR N755A-1, 1N755AUR N756A-1, 1N756AUR N757A-1, 1N757AUR N758A-1, 1N758AUR N759A-1, 1N759AUR Electrical T A = +25 C (unless otherwise specified). Note 1: Zener voltage tolerance on A suffix is ±5%. No suffix denotes ±10% tolerance, C suffix denotes ±2% tolerance and D suffix denotes ±1% tolerance. Note 2: Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25 C + 3 C. Note 3: Zener impedance is derived by superimposing on I ZT A 60 Hz rms a.c. current equal to 10% of I ZT. 25

28 Diodes for Hi-Rel Applications Zener Diodes: 1N957B-1 to 1N986B-1, available in JAN, JANTX, JANTXV per /117 Part Number 1 Nominal Zener 2 Voltage, V Z Zener Test Current, I ZT (ma) Max Zener 3 Impedance Z I ZT (Ohms) Max Zener 3 Knee Impedance Max DC Zener Max Surge Max Reverse Leakage, Z I ZT Current, I ZM Current, I ZSM T A = 25 C, I V R (Ohms) (ma) (ma) (ma) (µa) Max Temperature Coefficient α VZ (%/ C) 1N957B N958B N959B N960B N961B N962B N963B N964B N965B N966B N967B N968B N969B N970B N971B N972B N973B N974B N975B N976B N977B N978B N979B N980B N981B N982B N983B N984B N985B N986B Electrical T A = +25 C (unless otherwise specified). Note 1: The JEDEC type numbers shown (B Suffix) have a ±5% tolerance on nominal Zener voltage. The suffix A is used to identify ±10% tolerance; suffix C is used to identify ±2%: and suffix D is used to identify ±1%; no suffix indicates ±20%. Note 2: Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25 C + 3 C. Note 3: Zener impedance is derived by superimposing on I ZT A 60 Hz rms a.c. current equal to 10% of I ZT. 26

29 Diodes for Hi-Rel Applications Low Noise Zener Diodes: 1N5518B-1 to 1N5546B-1, available in JAN, JANTX and JANTXV per/437 Part Number 1 Nominal Zener 2 Voltage, V I ZT Zener Test Current, I ZT (ma) Max Zener 3 Impedance B, C, D Suffix Z I ZT (Ohms) (µa dc) Max ReverseCurrent, I R V R = Volts (NON & A- Suffix) (B- C- D- Suffix) Max Zener DC Current, I ZM (ma) Max Reverse Current, I V R (µa) Max Noise Density, N I ZT (µv / Hz) Low V Z Current, I ZL 1N5518B-1, 1N5518BUR N5519B-1, 1N5519BUR N5520B-1, 1N5520BUR N5521B-1, 1N5521BUR N5522B -1, 1N5522BUR N5523B-1, 1N5523BUR N5524B-1, 1N5524BUR N5525B-1, 1N5525BUR N5526B-1, 1N5526BUR N5527B -1, 1N5527BUR N5528B-1, 1N5528BUR N5529B-1, 1N5529BUR N5530B-1, 1N5530BUR N5531B-1, 1N5531BUR N5532B-1, 1N5532BUR N5533B-1, 1N5533BUR N5534B-1, 1N5534BUR N5535B-1, 1N5535BUR N5536B-1, 1N5536BUR N5537B-1, 1N5537BUR N5538B-1, 1N5538BUR N5539B-1, 1N5539BUR N5540B-1, 1N5540BUR N5541B-1, 1N5541BUR N5542B-1, 1N5542BUR N5543B-1, 1N5543BUR N5544B-1, 1N5544BUR N5545B-1, 1N5545BUR N5546B-1, 1N5546BUR Electrical T A = +25 C (unless otherwise specified). Note 1: No suffix type numbers are ±20% with guaranteed limits for only V Z, l R, and V F. Units with A suffix are ±10% with guaranteed limits for V Z, l R, and V F. Units with guaranteed limits for all six parameters are indicated by a B suffix for ±5.0% units, C suffix for ±2.0% and D suffix for ±1.0%. Note 2: Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25 C + 3 C. Note 3: Zener impedance is derived by superimposing on I ZT A 60 Hz rms a.c. current equal to 10% of I ZT. 27

30 Diodes for Hi-Rel Applications TC Zener Diodes: 1N to 1N4584-1, available in JAN, JANTX, JANTXV and JANS per /452 Part Number 1 Zener Test Current, I ZT (ma) Effective Temperature Coefficient (% / C) Voltage Temperature Stability ( V ZT ) 1 (mv) Temperature Range ( C) Maximum Dynamic Zener Impedance 2 (Ohms) 1N4565-1, 1N4565UR to +75 C 200 1N4565A-1, 1N4565AUR to +100 C 200 1N4566-1, 1N4566UR to +75 C 200 1N4566A-1, 1N4566AUR to +100 C 200 1N4567-1, 1N4567UR to +75 C 200 1N4567A-1, 1N4567AUR to +100 C 200 1N4568-1, 1N4568UR to +75 C 200 1N4568A-1, 1N4568AUR to +100 C 200 1N4569-1, 1N4569UR to +75 C 200 1N4569A-1, 1N4569AUR to +100 C 200 1N4570-1, 1N4570UR to +75 C 100 1N4570A-1, 1N4570AUR to +100 C 100 1N4571-1, 1N4571UR to +75 C 100 1N4571A-1, 1N4571AUR to +100 C 100 1N4572-1, 1N4572UR to +75 C 100 1N4572A-1, 1N4572AUR to +100 C 100 1N4573-1, 1N4573UR to +75 C 100 1N4573A-1, 1N4573AUR to +100 C 100 1N4574-1, 1N4574UR to +75 C 100 1N4574A-1, 1N4574AUR to C 100 1N4575-1, 1N4575UR to +75 C 50 1N4575A-1, 1N4575AUR to +100 C 50 1N4576, 1N4576UR to +75 C 50 1N4576A, 1N4576AUR to +100 C 50 1N4577-1, 1N4577UR to +75 C 50 1N4577A-1, 1N4577AUR to +100 C 50 1N4578-1, 1N4578UR to + 75 C 50 1N4578A-1, 1N4578AUR to +100 C 50 1N4579-1, 1N4579UR to +75 C 50 1N4579A-1, 1N4579AUR to +100 C 50 1N4580-1, 1N4580UR to +75 C 25 1N4580A-1, 1N4580AUR to +100 C 25 1N4581-1, 1N4581UR to +75 C 25 1N4581A-1, 1N4581AUR to +100 C 25 1N4582-1, 1N4582UR to +75 C 25 1N4582A-1, 1N4582AUR to +100 C 25 1N4583-1, 1N4583UR to +75 C 25 1N4583A-1, 1N4583AUR to +100 C 25 1N4584-1, 1N4584UR to +75 C 25 1N4584A-1, 1N4584AUR to +100 C 25 Electrical +25 C (unless otherwise specified). Note 1: The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mv at any discrete temperature between the established limits, per JEDEC standard No. 5. Note 2: Zener impedance is derived by superimposing on l Z T A 60 Hz rms a.c. current equal to 10% of l Z T. 28

31 Diodes for Hi-Rel Applications TC Zener Diodes: 1N821-1 to 1N829-1, available in JAN, JANTX, JANTXV and JANS per /159 Part Number Zener Test Current, I ZT Effective Temperature Coefficient (ma) Max Zener Impedance Z ZT 1 (Ohms Ω) Voltage Temperature Stability, V ZT -55 C to C 2 (mv) Efficient Temperature Coefficient (% / C) 1N821-1, 1N821UR N821A-1, 1N821AUR N822-1, 1N822UR N823-1, 1N823UR N823A-1, 1N823AUR N824-1, 1N824UR N825-1, 1N825UR N825A-1, 1N825AUR N826-1, 1N826UR N827-1, 1N827UR N827A-1, 1N827AUR N828-1, 1N828UR N829-1, 1N829UR N829A-1, 1N829AUR Double anode: electrical specifications apply under both bias polarities. Electrical +25 C (unless otherwise specified). Note 1: Zener impedance is derived by superimposing on l ZT A 60 Hz rms a.c. current equal to 10% of l ZT. Note 2: The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mv at any discrete temperature between the established limits, per JEDEC standard No

32 Diodes for Hi-Rel Applications Switching Diodes: 1N3600, 1N available in JAN, JANTX and JANTXV per /231 Part Number V BR I R = 10 µa V RWM I R VR = 50 Vdc I R2 V R = 50 Vdc T A = 150 C C I R = 0; f = 1 MHz AC signal = 50 mv (p-p) T A = 25 C (V pk) (µa dc) (µa dc) (pf) (na) t rr I R = ma I F = ma R L = 100 W (V dc min) V f1 I F = 1 ma dc (V dc max) (V dc min) V f2 I F = 10 ma dc (V dc max) (V dc min) V f3 I F = 50 ma dc (pulsed) (V dc max) (V dc min) V f4 I F = 100 ma dc (pulsed) (V dc max) (V dc min) V f5 I F = 200 ma dc (pulsed) (V dc max) 1N N4150-1, 1N4150UR Electrical +25 C (unless otherwise specified). Switching Diodes: 1N914, 1N available in JAN, JANTX and JANTXV per /116 Part Number V 100 µa V RWM I O V f1 IF = 10 ma V f2 IF = 50 ma t rr I R = 10 ma I F = 10 ma R L = 100 W I R3 V R = 20 Vdc T A = 150 C (V pk) (ma) (V dc) (V dc) (nsec) (na) (µa) (µa) (µa) (pf) (pf) I 20 Vdc I 75 Vdc I R3 V R = 20 Vdc T A = V Capacitance 1.5 V 1N914, 1N914UR N4148-1, 1N4148UR Electrical +25 C (unless otherwise specified). Switching Diodes: 1N6638 to 1N6643, available in JAN, JANTX, JANTXV and JANS per /578 and /609 Part Number V I R V RWM V FR / t I F = 200 ma C T1 V R = 0.0 V C T2 V R = 1.5 V t rr I R = 10 ma I F = 10 ma V R1 V R = V RWM I R2 V R = 20 V T A = 150 C I R3 V R = 20 V T A = 150 C I R4 V R = V RWM V I F V I F T A = -55 C I F (V pk) (ma) (V pk) V FR t fr (V pk) (ns) (pf) (pf) (ns) (na dc) (na dc) (µa dc) (µa dc) (V dc min) (V dc max) (V dc max) (ma pulsed) 1N N N N N N Electrical T A = +25 C (unless otherwise specified)

33 Diodes for Hi-Rel Applications Switching Diodes: 1N6638US to 1N6643US, available in JAN, JANTX, JANTXV and JANS per /578 and /609 Part Number V I R V RWM V FR / t I F = 200 ma C T1 V R = 0.0 V C T2 V R = 1.5 V t rr I R = 10 ma I F = 10 ma V R1 V R = V RWM I R2 V R = 20 V T A = 150 C I R3 V R = 20 V T A = 150 C I R4 V R = V RWM V I F V I F T A = -55 C I F (V pk) (µa) (V pk) V FR t fr (V pk) (ns) (pf) (pf) (ns) (na dc) (na dc) (µa dc) ( µa dc) (V dc min) (V dc max) (V dc max) (ma pulsed) 1N6638U and US N6639U and US N6640U and US N6641U and US N6642U, US and UB N6643U and US Electrical T A = +25 C (unless otherwise specified) Switching Diodes: 1N4531, available in JAN, JANTX and JANTXV per /116 Part Number V F I R Ambient (V dc) Ambient V dc A max ( C) (I F ma) max ( C) Ambient ( C) (I R µa) V BR (V dc max) t rr I R = 10 ma I F = 10 ma rec = 100 Ω T I F = 50 ma V I F = 50 0 V Capacitance (V dc max) (nsec) (nsec) (V pk) (pf) (pf) 1.5 V 1N Switching Diodes: 1N4454-1, available in JAN, JANTX and JANTXV per /144 Part Number V 5 µa V RWM (V pk) I O (ma) V f1 I F = 10 ma V f2 I F = 10 ma (V dc) T rr (nsec) I 50 Vdc (µa) I 75 Vdc T A = 150 C (µa) 0 V (pf) 1N4454-1, 1N4454UR

34 Diodes for Hi-Rel Applications Current Regulator Diodes: 1N to 1N5314-1; 1N to 1N available in JAN, JANTX, JANTXV and JANS per /463 Part Number Regulator Current I P V S =25V Nominal Minimum Maximum Max Dynamic V S = 25V Z S (M) 1 Min Knee V K = 6.0V Z K (M) 2 Max Limiting I L = 0.8 l P (min) V L Peak Operating Voltage 1N5283-1, 1N5283UR N5284-1, 1N5284UR N5285-1, 1N5285UR N5286-1, 1N5286UR N5287-1, 1N5287UR N5288-1, 1N5288UR N5289-1, 1N5289UR N5290-1, 1N5290UR N5291-1, 1N5291UR N5292-1, 1N5292UR N5293-1, 1N5293UR N5294-1, 1N5294UR N5295-1, 1N5295UR N5296-1, 1N5296UR N5297-1, 1N5297UR N5298-1, 1N5298UR N5299-1, 1N5299UR N5300-1, 1N5300UR N5301-1, 1N5301UR N5302-1, 1N5302UR N5303-1, 1N5303UR N5304-1, 1N5304UR N5305-1, 1N5305UR N5306-1, 1N5306UR N5307-1, 1N5307UR N5308-1, 1N5308UR N5309-1, 1N5309UR N5310-1, 1N5310UR N5311-1, 1N5311UR N5312-1, 1N5312UR N5313-1, 1N5313UR N5314-1, 1N5314UR N7048-1, 1N7048UR N7049-1, 1N7049UR N7050-1, 1N7050UR N7051-1, 1N7051UR N7052-1, 1N7052UR N7053-1, 1N7053UR N7054-1, 1N7054UR N7055-1, 1N7055UR Electrical +25 C (unless otherwise specified). Note 1: Z S is derived by superimposing A 90 Hz RMS signal equal to 10% of V S on V S Note 2: Z K is derived by superimposing A 90 Hz RMS signal equal to 10% of V K on V K Available In chip form. 32

35 Diodes for Hi-Rel Applications Zener Diode Chip Series: CD4099 to CD4135, available in JANHC and JANKC per /435 Part Number Nominal Zener Voltage V I ZT 1 Zener Test Current, I ZT (µa) Max Zener Impedance Z I ZT 2 (Ohms) Maximum Reverse Leakage Current, I V R (µa) CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD CD Electrical +25 C (unless otherwise specified). Note 1: Zener voltage range equals nominal Zener voltage ± 5% for no suffix types. Zener voltage is read using a pulse measurement, 10 milliseconds maximum. C suffix = ± 2% and D suffix = ± 1 %. Note 2: Zener impedance is derived by superimposing on l ZT a 60 Hz rms AC current equal to 10 % of I ZT. 33

36 Diodes for Hi-Rel Applications Zener Diode Chip Series: CD4614 to CD4627, available in JANHC and JANKC per /435 Part Number Nominal Zener Voltage V I ZT 1 Zener Test Current, I ZT (µa) Max Zener Impedance Z I ZT 2 (Ohms) Maximum Reverse Leakage Current, I V R (µa) CD CD CD CD CD CD CD CD CD CD CD CD CD CD Electrical +25 C (unless otherwise specified). Note 1: Zener voltage range equals nominal Zener voltage ± 5% for no suffix types. Zener voltage is read using a pulse measurement, 10 milliseconds maximum. C suffix = ± 2% and D suffix = ± 1 %. Note 2: Zener impedance is derived by superimposing on l ZT a 60 Hz rms AC current equal to 10 % of I ZT. Zener Diode Chip Series: CD746A to CD759A, CD4370A to CD4372A, available in JANHC and JANKC per /127 Part Number Nominal Zener Voltage V I ZT 1 Zener Test Current, I ZT (ma) Max Zener Impedance Z I ZT 2 (Ohms) Maximum Reverse Leakage Current, I V R (µa) Max Zener Current, I ZM (ma) CD4370A CD4371A CD4372A CD746A CD747A CD748A CD749A CD750A CD751A CD752A CD753A CD754A CD755A CD756A CD757A CD758A CD759A Electrical +25 C (unless otherwise specified). Note 1: Zener voltage range equals nominal voltage ± 5% for A suffix. No suffix denotes ± 10%. C suffix = ± 2% and D suffix = ± 1%. Zener voltage is read using a pulse measurement, 10 milliseconds maximum. Note 2: Zener impedance is derived by superimposing on l ZT a 60 Hz rms a.c. current equal to 10 % of I ZT. 34

37 Diodes for Hi-Rel Applications Zener Diode Chip Series: CD5518B to CD5546B, available in JANHC and JANKC per /437 Part Number Nominal Zener Voltage V I ZT 1 Zener Test Current, I ZT (ma dc) Max Zener Impedance Z I ZT 2 (Ohms) Max Reverse Leakage Current I R (ma dc) Max Reverse Leakage Current V R Regulation Factor 3 V Z Low V Z Current, I ZL (ma dc) CD5518B CD5519B CD5520B CD5521B CD5522B CD5523B CD5524B CD CD5526B CD5527B CD5528B CD5529B CD CD5531B CD5532B CD5533B CD5534B CD5535B CD5536B CD5537B CD5538B CD5539B CD5540B CD5541B CD5542B CD5543B CD5544B CD5545B CD5546B Electrical +25 C (unless otherwise specified). Note 1: Suffix B voltage range equals nominal Zener voltage. ± 5%. Suffix A equals ± 10 %. C suffix = ± 2 % and D suffix= ± 1 %. No suffix equals ± 20 %. Zener voltage is read using a pulse measurement, 10 milliseconds maximum. Note 2: Zener impedance is derived by superimposing on lzt a 60 Hz rms ac current equal to 10 % of IZT. Note 3: DV Z is the maximum difference between V Z -@ I ZT and VZ at I ZL measured with the device junction in thermal equilibnum at an ambient temperature of +25 ± 3 C. 35

38 Diodes for Hi-Rel Applications Zener Diode Chip Series: CD957B to CD986B, available in JANHC and JANKC per /117 Part Number Nominal Zener Voltage, V Z 1 Zener Test Current, I ZT (ma) Max Zener Impedance Z I ZT 2 (Ohms) Max Zener Impedance Max DC Zener Max Reverse 2 Z I ZK Current, I Leakage Current, I V R ZM (Ohms) (ma) (ma) (µa) CD957B CD958B CD959B CD960B CD961B CD962B CD963B CD964B CD965B CD966B CD967B CD968B CD969B CD970B CD971B CD972B CD973B CD974B CD975B CD976B CD977B CD978B CD979B CD980B CD981B CD982B CD983B CD984B CD985B CD986B Electrical +25 C (unless otherwise specified). Note 1: Zener voltage range equals nominal voltage ± 5% for B suffix. A Suffix denotes ± 10%. No suffix denotes ± 20%. C suffix = ± 2% and D suffix = ± 1%. Zener voltage is read using a pulse measurement, 10 milliseconds maximum. Note 2: Zener impedance is derived by superimposing on lzt a 60 Hz rms a.c. current equal to 10 % of IZT. 36

39 Diodes for Hi-Rel Applications TC Zener Diode Chip Series: CD4565 to CD4584A, available in JANHC and JANKC per /452 Part Number Zener Test Current, I ZT (ma) Effective Temperature Coefficient (% / C) Voltage Temperature Stability, V ZT Max -55 to (Ohms) Temperature Range ( C) Max Zener Impedance, Z ZT 2 (Ohms) CD to +75 C 200 CD4565A to +100 C 200 CD to +75 C 200 CD4566A to +100 C 200 CD to +75 C 200 CD4567A to +100 C 200 CD to +75 C 200 CD4568A to +100 C 200 CD to +75 C 200 CD4569A to +100 C 200 CD to +75 C 100 CD4570A to +100 C 100 CD to +75 C 100 CD4571A to +100 C 100 CD to +75 C 100 CD4572A to +100 C 100 CD to +75 C 100 CD4573A to +100 C 100 CD to +75 C 100 CD4574A to +100 C 100 CD to +75 C 50 CD4575A to +100 C 50 CD to +75 C 50 CD4576A to +100 C 50 CD to +75 C 50 CD4577A to +100 C 50 CD to +75 C 50 CD4578A to +100 C 50 CD to +75 C 50 CD4579A to +100 C 50 CD to +75 C 25 CD4580A to +100 C 25 CD to +75 C 25 CD4581A to +100 C 25 CD to +75 C 25 CD4582A to +100 C 25 CD to +75 C 25 CD4583A to +100 C 25 CD to +75 C 25 CD4584A to +100 C 25 Electrical +25 C (unless otherwise specified). Note 1: The maximum allowable change observed over the entire temperature range, i.e., the diode voltage will not exceed the specialized mv at any discrete temperature between the established limits, per JEDEC standard No.5. Note 2: Zener impedance is derived by superimposing on l ZT a 60 Hz rms ac current equal to 10% of l ZT. 37

40 Diodes for Hi-Rel Applications Ultrafast Rectifier Diode Chips: CD5802, CD5804 & CD5806, available in JANHC and JANKC per /477 Part Number (V min) (V pk) (A) (ns) (pf) (V dc) (V dc) (V dc) (V dc) (µa dc) (µa dc) (V dc) CD CD CD Electrical +25 C (unless otherwise specified). V RVM V BR I O T J = 75 C T rr I F = 0.5 A, I RM = 0.5 A, I (REC) = 0.05 A C j V R = 10.0 V V FM1 I FM = 1.0 A, T P = 8.3 ms (max) V FM2 I FM = 2.5 A, T P = 8.3 ms (max) V FM3 I FM = 1.0 A, T A = +125 C V FM4 I FM = 1.0 A, T A = -65 C I V RWM T c = 25 C I V RWM Rated T A = 125 C V FRM t r = 8 ns, I FM = 250 ma Ultrafast Rectifier Diode Chips: CD5807, CD5809 & CD5811, available in JANHC and JANKC per /477 V RVM V BR I O T J = 75 C T rr I F = 0.5 A, I RM = 0.5 A, I (REC) = 0.05 A C j V R = 10.0 V V FM1 I FM = 1.0 A, T P = 8.3 ms (max) V FM2 I FM = 2.5 A, T P = 8.3 ms (max) V FM3 I FM = 1.0 A, T A = +125 C Part Number (V min) (V pk) (A) (ns) (pf) (V dc) (V dc) (V dc) (V dc) (µa dc) (µa dc) (V dc) V FM4 I FM = 1.0 A, T A = -65 C I V RWM T c = 25 C I V RWM Rated T A = 125 C V FRM t r = 8 ns, I FM = 250 ma CD CD CD Electrical +25 C (unless otherwise specified). Silicon Switching Diode Chips: CD914, CD4148, CD4531, CD6642 & CD4454, available in JANHC and JANKC per /116 and /578 V 100 ma V RVM I O V F1 I F = 10 ma V F2 I F = 50 ma V F3 I F = 100 ma T rr I 20 Vdc I R2 I 20 Vdc T A = 150 C I R4 T A = 150 C 0 V 1.5 V Part Number (V min) (V pk) (ma) (Vdc) (Vdc) (Vdc) (nsec) (na) V) (µa) V) (pf) (pf) CD N/A CD4148 CD4531 CD N/A CD N/A N/A 4 N/A 50 N/A N/A Electrical +25 C (unless otherwise specified). Silicon Switching Diode Chips: CD3600, CD4150, CD4153 & CD6640. CD6640 available in JANHC and JANKC per /609 Part Number V BR IR = 10 µa* (V min) V RVM (V pk) I R1 V R = 50 Vdc T A = 150 C (µa Vdc) I R2 V R = 50 Vdc T A = 150 C (µa Vdc) Capacitance V R = 0; f = 1 MHz ac signals = 50 mv (p-p) (pf) t rr (nsec) CD CD CD6640 CD * ma for CD Electrical +25 C (unless otherwise specified).

41 Transistors for Hi-Rel Applications NPN Transistors, available in JAN, JANTX, JANTXV and JANS and JANSR as noted Part Number Slash Sheet V CEO (sus) V CBO I C (max) (Amps) h I C / V CE min/max@a/v C obo (pf) f T (MHz) Package 2N / TO-3 2N3418* / TO-5 / TO-39 2N3419* / TO-5 / TO-39 2N3420* / TO-5 / TO-39 2N3421* / TO-5 / TO-39 2N / TO-3 2N / TO-3 2N TO-66 2N TO-66 2N / TO-66 2N / TO-3 2N4150* / TO-5 / TO-39 / U3 2N TO-39 2N TO-39 2N TO-39 2N5152* / TO-5 / TO-39 2N5154* / TO-5 / TO-39 / U3 2N / TO-3 2N5339* / TO-5 / TO-39 / U3 2N TO-39 2N TO-39 2N / TO-3 2N / TO-3 2N / TO-3 2N / TO-3 2N / TO-3 2N / TO-3 2N / TO-3 2N / TO-66 2N / TO-66 2N / TO-3 2N / TO-3 2N / TO-3 2N / TO-3 2N / TO-3 2N / TO-3 2N / TO-3 * Also available in JANS. These parts are RAD Hard. NPN Rad Hard Small Signal Transistors: available in JANTXV, JANS and JANSR Part Number Slash Sheet V CEO (sus) V CBO I C (max) (Amps) h I C / V CE min/max@a/v C obo (pf) f T (MHz) Package JANS2N TO-5 / TO-39 JANS2N2222A TO-18, UA, UB JANS2N TO-18, UA, UB JANS2N TO-5 / TO-39 JANS2N TO-18, UA, UB 39

42 Transistors for Hi-Rel Applications PNP Transistors: available in JAN, JANTX, JANTXV and JANS and JANSR as noted Part Number Slash Sheet V CEO (sus) V CBO I C (max) (Amps) h I C / V CE min/max@a/v C obo (pf) f T (MHz) Package 2N3740* / TO-66 2N3741* / TO-66 2N / TO-3 2N / TO-3 2N3867* / TO-5 / TO-39 2N3868* / TO-5 / TO-39 2N / TO-39 2N / TO-39 2N / TO-39 2N5151* / TO-5 / TO-39 2N5153* / TO-5 / TO-39 / U3 2N / TO-39 2N / TO-39 2N / TO-3 2N / TO-3 2N6193* / TO-5 / TO-39 / U3 2N / TO-3 2N / TO-3 2N / TO-66 2N / TO-66 JANS2N2905A** TO-5/TO-39 JANS2N2907A** TO-18, UA, UB ** PNP Rad Hard Small Signal Transistors: JANS and JANSR Silicon Controlled Rectifiers: available in JAN, JANTX and JANTXV per /276 Part Number Slash Sheet V DRM I O (ma) I RBX (µa) V GT (V min/max) I GT (µa) I HOX (ma) Package 2N / TO-5 2N2323S / TO-39 2N2323A / TO-5 2N2323AS / TO-39 2N / TO-5 2N2324S / TO-39 2N2324A / TO-5 2N2324AS / TO-39 2N / TO-5 2N2326S / TO-39 2N2326A / TO-5 2N2326AS / TO-39 2N / TO-5 2N2328S / TO-39 2N2328A / TO-5 2N2328AS / TO-39 2N / TO-5 2N2329S / TO-39 2N2329A / TO-5 2N2329AS / TO-39 40

43 Diode Packaging DO-213AA S BD DO-213AA ECT BL ECT DO-213AB S BD DO-213AB ECT BL ECT DO-34, DO-35 BD LL Polarity Band (Cathode) BL LD LL 41

44 Diode Packaging DO-7 BL LL1 LL BL Polarity Band (Cathode) LL1 LD LL D-5D LL BL Polarity Band(Cathode) BD LD D-5DUS ECT BL S BD BD 42

45 Transistor Packaging TO-3 CH CD HT LL L1 Emitter PS PS1 LD 1 2 HR Seating Plane HR1 Base S1 MHS MHD TO-18 P CD Q L1 L2 CH LU LL LD Seating Plane HD 1 2 TW r 3 TL LC TO-5, TO-39 P CD Q CH L1 L2 LU LL LD Seating Plane HD 1 2 TW r 3 TL LC 43

46 Transistor Packaging TO-66 CD CD HT LL L1 Seating Plane LD Emitter PS1 PS MHS 1 2 S1 MHD HR1 Base HR UA BW LL2 BL BL2 PIN 1 Identifier LL1 LL1 BW2 LW CH Seating Plane LH LS LW2 L3 See Detail A Detail A Collector Emitter Base UB Orientation Key BW CL CW BH See Detail A r1 r2 BL LW 3 PLS LS1 LS2 LL1 3 PLS LL2 Detail A r 3 PLS 44