POWER MANAGEMENT EL Lamp Drivers: Die Specifications
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1 POWER MANAGEMENT EL Lamp Drivers: Die Specifications IMP2 Single Cell Battery Powered Electroluminescent Lamp Driver IMP2 Single Cell Battery Powered EL Lamp Driver, 180V PP Drive IMP28 IMP0 IMP803 High-Voltage EL Lamp Driver, 220V PP Drive Power Efficient EL Lamp Driver High-Voltage EL Lamp Driver
2 IMP2 - Die Specifications IMP2 Single Cell Battery Powered EL Lamp Driver Die Thickness: Bond Wire Size: Back Side Metal: Back Side Potential: Die Attach Method: Bond Metal: Bond Size: LX CS mils (2 microns) 1.0 mil (2 microns) None Ground Conductive Adhesive Aluminum, 1% Silicon, 1/2% Copper 0 microns per side 1.3mm x 1.4mm IMP2 1.3mm 9 DIS 1 VDD 1.4mm Name Function Ground pad. V B EL lamp drive. 9* DIS Disable pad. DIS = HIGH disables chip. * See table Location 1 X (microns) Y (microns) Disable Disable IMP2/D 9 IMP2/D1 9 2 Daily Silver IMP Electroluminescent Lamp Driver 1
3 IMP2 - Die Specifications IMP2 Single Cell Battery Powered EL Lamp Driver, 180V PP Drive Die Thickness: Bond Wire Size: Back Side Metal: Back Side Potential: Die Attach Method: Bond Metal: Bond Size: LX CS mils (2 microns) 1.0 mil (2 microns) None Ground Conductive Adhesive Aluminum, 1% Silicon, 1/2% Copper 0 microns per side 1.3mm x 1.4mm IMP2 1.3mm 9 DIS 1 VDD 1.4mm Name Function Ground pad. V B EL lamp drive. 9* DIS Disable pad. DIS = HIGH disables chip. * See table Location 1 X (microns) Y (microns) Disable Disable Disable IMP2/D 9 IMP2/D Daily Silver IMP
4 IMP28 - Die Specifications IMP28 High-Voltage EL Lamp Driver, 220V PP Drive Die Thickness: 2 mils (2 microns) Bond Wire Size: 1.0 mil (2 microns) Back Side Metal: None Back Side Potential: Ground Die Attach Method: Conductive Adhesive Bond Metal: Aluminum, 1% Silicon, 1/2% Copper Bond Size: 0 microns per side 1.38mm x 1.82mm DIS VDD 1 Name Function Ground pad. V B EL lamp drive. 9 Ground pad. * DIS Disable pad. DIS = HIGH disables chip. * See table 2 Location 1 CS LX 3 4 IMP mm 1.82mm X (microns) Y (microns) Disable Disable Disable IMP28/D IMP28/D1 28 Daily Silver IMP Electroluminescent Lamp Driver 3
5 IMP0 - Die Specifications IMP0 Power Efficient EL Lamp Driver Die Thickness: 2 mils (2 microns) Bond Wire Size: 1.0 mil (2 microns) Back Side Metal: None Back Side Potential: Ground Die Attach Method: Conductive Adhesive Bond Metal: Aluminum, 1% Silicon, 1/2% Copper Bond Size: 0 microns per side 1.38mm x 1.82mm DIS VDD 1 Name Function Ground pad. V B EL lamp drive. 9 Ground pad. * DIS Disable pad. DIS = HIGH disables chip. * See table CS LX IMP mm 1.82mm Location 1 X (microns) Y (microns) Disable Disable IMP0/D IMP0/D1 0 4 Daily Silver IMP
6 IMP803 High-Voltage EL Lamp Driver IMP803 - Die Specifications Die Thickness: 2 mils (2 microns) Bond Wire Size: 1.0 mil (2 microns) Back Side Metal: None Back Side Potential: Ground Die Attach Method: Conductive Adhesive Bond Metal: Aluminum, 1% Silicon, 1/2% Copper Bond Size: 0 microns per side 1.38mm x 1.82mm DIS VDD 1 Name Function Ground pad. V B EL lamp drive. 9 Ground pad. * DIS Disable pad. DIS = HIGH disables chip. * See table 2 Location 1 CS LX 3 4 IMP mm 1.82mm X (microns) Y (microns) Disable Disable IMP803SX IMP803/D1 803 Daily Silver IMP Electroluminescent Lamp Driver
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