Monolithic GaN Device Integration Drives Efficiency, Density and Reliability in Power Conversion

Transcription

1 Monolithic GaN Device Integration Drives Efficiency, Density and Reliability in Power Conversion Dan Kinzer, CTO/COO & Stephen Oliver, VP Sales & Marketing August 16 th 2018

2 Navitas Semiconductor Inc. World s first & only GaN power IC company Mass production, qualified Beyond JEDEC Founder member JEDEC JC-70.1 GaN Reliability 2

3 The Si Landscape 1MW+ 100kW EV Inverters Wind Turbines Traction Utility Application Power 10kW 1kW 100W On-board Battery Chargers & DC/DC Converters Si FETs LED Lighting Microinverters Commercial Solar String Inverters Server Power TV, Game Players Industrial Drives, Welders, UPS, Inverters Si IGBTs Mobile Wireless Power Laptop Adapters 10W Class D Audio Smartphone, Tablet Chargers Device Voltage (V) 30V 100V 300V 600V 1,200V 3,300V 6,500V+

4 The GaN / SiC Landscape 1MW+ 100kW EV Inverters Wind Turbines Traction Utility Application Power 10kW 1kW 100W GaN (Lateral) On-board Battery Chargers & DC/DC Converters LED Lighting Microinverters Commercial Solar String Inverters Server Power TV, Game Players Industrial Drives, Welders, UPS, Inverters SiC (Vertical) Mobile Wireless Power Laptop Adapters 10W Class D Audio Smartphone, Tablet Chargers Device Voltage (V) 30V 100V 300V 600V 1,200V 3,300V 6,500V+

5 The Next Revolution in Power Systems Linear Regulators Switching Regulators Switching Regulators HF Switching Regulators Hz 30 khz 65 khz 1 MHz+ Power Density (W/in 3 ) (AC-DC converters ~300 W) x Lower Loss 3x Lower $/W 80% 90% 3x Lower Loss 3x Lower $/W 96-98% % efficiency New GaN Power ICs New Magnetics New Controllers New Topologies

6 Market Demands Legislative US DoE VI, Euro CoC Tier 2 CoC Features Type C, USB PD 3.0 / PPS / QC 4.0 Performance Fast charging, size, weight, low profile Cost Premium vs old, slow designs? 6

7 Speed & Efficiency are Key Speed enables small size, low-cost and faster charging Efficiency enables energy savings With Silicon or Discrete GaN power devices, you can get one or the other With GaN power ICs, you get both at the same time, unequaled Speed & Efficiency Up to 100x faster Shrink size, weight & cost Up to 5x Energy Savings 7

8 High-Frequency Eco-System GaNFast power ICs plus HF Controllers HF Magnetics HF SR FETs HF Architectures 8

9 Magnetics: 10x Faster Every Decade 3.0x10 3 P v =500 mw/cm 3 Modified Performance factor F 3/4 =Bf 3/4 (T Hz 3/4 ) C90 (Ferroxcube) ~1990s ML91S (Hitachi Metal) ~2010s 3F35 (Ferroxcube) ~2000s (Fair-Rite) ~2015s Future F SW (MHz) 9

10 World s First GaNFast Power ICs Fastest, most efficient GaN Power FETs First & Fastest Integrated GaN Gate Drivers World s First Power ICs >20x faster than silicon >5x faster than cascoded GaN Proprietary design >3x faster than any other gate driver Proprietary design 30+ patents granted/applied Up to 40MHz switching, 5x higher density & 20% lower system cost 10

11 Single GaNFast Power IC Monolithic integration, 650V GaN FET GaN Driver GaN Logic Mass production 10 30V 5 x 6 mm QFN 11

12 Clean, Controlled FET Gate Discrete driver Gate-loop inductance creates overshoot (even with good layout) Reliability concern 2 V Overshoot Discrete Driver & Discrete FET V GS GaNFast Power IC No gate loop parasitic Clean and fast gate signal No CdV/dt turn-on No IV crossover turn-off switching losses GaN Power IC V GS 4V Undershoot 12

13 Half-Bridge GaNFast Power IC Monolithic integration, 650V 2x GaN FETs 2x GaN drivers GaN Logic (level-shift, bootstrap, UVLO, shoot-through, ESD) 6 x 8 mm QFN 13

14 Robust GaNFast Half-Bridge Non-Overlapping Logic Input (Typical Operation) Overlapping Logic Input (GaNFast Power IC Protection) 5 V digital input, 6.2 V gate output, 80 ns/div

15 Beyond JEDEC Qualification GaN-Based Qual Plan Package Stress Die Stress Reference Test Conditions Duration Lots S.S. Preconditioning (MSL1): JESD22-A113 Moisture Preconditioning + 3x reflow: N/A J-STD-020 HAST, UHAST, TC & PC JESD22-A104 JESD22-A122 JESD22-A110 JESD22-A108 JESD22-A108 Temperature Cycle: -55 C / 150 C Power Cycle: Delta Tj = 100 C 1,000cy ,000cy 3 77 Highly Accelerated Stress Test: 130 C / 85%RH / 100V V DS 96hrs 3 77 High Temperature Reverse Bias: 150 C / 520V V DS 1,000hrs 3 77 High Temperature Gate Bias: 150 C / 6V V GS 1,000hrs 3 77 JESD22-A108 High Temperature Operating Life 1,000hrs 3 77 JS Human Body Model ESD N/A 1 3 Lifetime Models (HTOL, HTRB) Failure Modes Established JS Charged Device Model ESD N/A 1 3 Application Specific HTOL Test Bench

16 ZVS HTOL at Statistical Sample Sizes Matches all elements of application profile FET & IC HTOL Mother Board Qualification 3 Lots x 77 Many cells in parallel Statistical sample sizes Low total power consumption Lifetime Models Voltage Current Frequency Temperature Conditions changeable to develop lifetime and acceleration models Early Life Failure Rate 3 Lots x 1,000

17 HTOL-based Lifetime Model T=150 C, Voltage Acceleration Voltage/ Temperature TTTTTTTT tttt FFaaaaaa hrrrr 1 (VVVVVVVVVVVVVV) nn= V= 650 V, Temperature Acceleration 650 TTTTTTTT tttt FFaaaaaa hrrrr ee EEEE= eeee kkkk

18 Lifetime Estimation: ACF Charger EE aa 1 1 ( TTTTTTTTTTTTTTTTTTTTTT AAAAAAAAAAAAAAAAAAAAAAAA FFFFFFFFFFFF AAAA tttttttt = ee kk TT aaaaaaaaaaaaaaaaaaaaaa TT ) rrrrrrrrrrrrrrrrrrrrrr VVVVVVVVVVVVVV AAAAAAAAAAAAAAAAAAAAAAAA FFFFFFFFFFFF AAAA vvvvvvvvvvvvvv = ( VV rrrrrrrrrrrrrrrrrrrrrr ) nn VV aaaaaaaaaaaaaaaaaaaaaa E a = 0.71eV n = 17.2 TTTTTTTTTT AAAAAAAAAAAAAAAAAAAAAAAA FFFFFFFFFFFF AAAA TToooooooo = AAAAAAAAAAAA xx AAAAAAAAAAAAAAAAAA LLLLLLLLLLLLLLLL eeeeeeeeeeeeeeee iiii aaaaaaaaaaaaaaaaaaaaaa = AAAAAAAAAAAA ll xx TTTTTTTT tttt ffffffffffffff iiii rrrrrrrrrrrrrrrrrrrrrr (TTTTTTTTTTTTTTTTTTTTTTTTTTTT) ACF Charger Full-Power Profile AC line Voltage (V) Rectified AC voltage (V) Reflected Voltage (V) Switch Voltage (V) Full power Temp ( C) LLLLLLLLLLLLLLLL = AAAAAAAAAAAAAA xx TTTTTTTTTTTTTT aaaaaaaaaaaaaa = VV AAAA iiiiiiiiii Predicted lifetime in charger application (ACF) exceeds 10yr lifetime requirement

19 GaNFast Applications 19

20 EMI? Si khz vs. GaN khz Si 45 W 90V AC 240V AC 115V AC Si: Overshoot/ringing: Need low-frequency to pass EMI GaNFast 45 W 90V AC 240V AC 115V AC GaN: No overshoot/ringing: good EMI Smaller, cheaper EMI filter 20

21 Quiet Power: GaNFast ACF at 1 MHz High frequency + Soft-switching + Pre-emptive EMI design Noise Level(dBuV) CM Noise 27dB W/O Shielding With Shielding EN55022B Noise Level(dBuV) DM Noise 21dB W/O Shielding With Shielding EN55022B Frequency(Hz) Frequency(Hz) 21

22 World s Smallest 27 W USB-PD NV6252 Half-Bridge Power, Output 27 W USB-PD 16 mm Topology Frequency Size Density Efficiency ACF with UCC28780 and NV6252 GaNFast Power IC 300 khz 23 cc (39 cc with case) 1.2 W/cc (19 W/in 3 ) (0.7 W/cc (11 W/in 3 ) cased >93% peak, 92.8% at 90 V AC, full load DoE Level VI, Euro CoC (EuP) Tier 2 Proprietary; Authorized Use with Navitas License Available now 22

23 27 W Clean Design Transformer RM6 SR FET NV6252 ACF IC CM Choke AC Plug SR IC Type-C Receptacle AC Bridge GND V SW DM Choke Bulk Caps 23

24 27 W High Efficiency 94% 94% 93% 92% 91% 90 VAC 115 V AC 230 V AC 4-Pt Average 92% 90% 88% 86% 84% 82% 115 V AC 230 V AC CoC Tier 2 Full Load 90% 89% 88% 87% 86% 85% 84% V OUT =5V 9V 11V 10% Load 80% 90% 88% 86% 84% 82% 80% 78% 76% 74% 72% 70% V OUT =5V V OUT = 5 V 9V 11V 9 V 11 V 115 V AC 230 V AC CoC Tier 2 24

25 27 W Cool Operation Top Bottom AC Bridge 80 C Transformer 75 C SR IC 80 C GaNFast Half-Bridge 75 C V CC LDO 80 C 90 V AC, 27 W, 25 C, uncased, no airflow 25

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27 World s Thinnest Universal 45 W NV611x Power ICs 11 mm Mu One 45W Apple 27W In mass production, see search Mu One Size : 29 cc (41 cc with case) Density : 1.7 W/cc (27 W/in 3 ), 1.1 W/cc (18 W/in 3 ) cased Proprietary; Authorized Use with Navitas License 27

28 45 W Mu One: Major Components Planar Transformer NV611x Power ICs ACF IC UCC28780 EMI Filter Type-C Receptacle AC Bridge PD IC Bulk Caps SR FET 28

29 45 W Mu One: Cool Operation Top Bottom GaNFast Power IC 75 C, 80 C Transformer 80 C AC Bridge 80 C SR IC 85 C SR FET 85 C 90 V AC, 45 W, 25 C, uncased, no airflow 29

30 45 W Mu One: Efficiency 94.5% 94.0% 92.0% 115 V AC 91.0% 93.5% 90.0% 89.0% 90 V AC 230 V AC Full Load, 20V 93.0% 92.5% 92.0% 4-Point Average 88.0% 87.0% 86.0% 85.0% CoC Tier % 84.0% 91.0% 83.0% 82.0% 90.5% 81.0% 90.0% Input V AC (V) 80.0% 5 V 9 V 15 V 20 V OUT 30

31 45W Mu One Conducted EMI 31

32 45W Mu One: Radiated EMI 32

33 World s Smallest 65 W USB-PD Adapter 15.5 mm 38 mm Power ICs 46 mm Power, Output Topology Frequency Size Density Efficiency Proprietary; Authorized Use with Navitas License 65 W USB-PD ACF with UCC28780 and NV6115, NV6117 GaNFast Power ICs 300 khz 27 cc (45 cc with case) 2.4 W/cc (39 W/in3) (1.5 W/cc (24 W/in3) cased >93% peak, 92.8% at 90 V AC, full load DoE Level VI, Euro CoC (EuP) Tier 2 33

34 Highest Efficiency Peak efficiency = 94.3% at 230 V AC, full load (20V/3.25A) Lowest line efficiency = 93.4% at 90 V AC, full load Standby: 25 mw at 115 V AC, 40 mw at 230 V AC CoC Tier 2 spec is < 75mW, DoE Level VI spec <= 210 mw 34

35 Cool Performance SR IC 82 C AC Rectifier 90 C GaN IC 81 C Meets customer case specification of <=50 C Conditions: 115V AC, 20V DC, 65W, 25 C ambient, no airflow, no heatsink 35

36 100W: Topology? Fixed or variable output? LLC best for fixed output ACF best for variable (PD) output AC #1 PFC CrCM Block Schematic Example 100 W Output Total Efficiency (Full load, 90 V AC, 25 C, no airflow, includes PD loss) LLC 97.5% 19 V fixed 94.5% #2 AC PFC CrCM ACF 96.5% [PD] USB-PD, Type C 93.6% AC #3 PFC CrCM LLC 97.5% DC-DC [PD] DC-DC [PD] DC-DC [PD] DC-DC [PD] USB-PD, Type A 15 W USB-PD, Type A 15 W USB-PD, Type C 45 W USB-PD, Type C 45 W 100 W max 92.6% 97% 98% 36

37 World s Smallest 100 W USB-PD Height = 14 mm Power, Output Topology Frequency Size Density Proprietary; Authorized Use with Navitas License 100 W USB-PD CrCM PFC with NCP1615 and NV6115 GaNFast Power IC ACF with UCC28780 and NV6115, NV6117 GaNFast Power ICs PFC min. 200 khz, ACF 300 khz 40 cc (65 cc with case) 2.5 W/cc (41 W/in 3 ) (1.5 W/cc (25 W/in 3 ) cased Efficiency >93.7% peak, 92.1% (target >93%) at 90 V AC, full load, DoE Level VI, Euro CoC (EuP) Tier 2 37

38 100 W USB-PD Light Load (20 V, 500 ma) V ACF_sw Heavy Load (20 V, 4.8 A) 10 ms/div 1 us/div V PFC_sw Light Load (20 V, 500 ma, zoom) Half Load (20V, 2.5A) V ACF_sw 50 us/div V SR i ACF_Lp 5 us/div V sr 38

39 150 W, 19 V: 200/500 khz Power, Output Topology Frequency Size Density Efficiency 150 W, 19 V CrCM PFC NCP1615 & LLC NCP13992AB with NV6115 GaNFast Power ICs PFC min. 200 khz, LLC typ. 500 khz 63 cc (101 cc with case) 2.4 W/cc (39 W/in 3 ) 1.5 W/cc (24 W/in 3 ) cased 95% peak, 93% at 90 V AC, full load DoE Level VI, Euro CoC (EuP) Tier 2 Proprietary; Authorized Use with Navitas License 39

40 150 W Highest Efficiency Efficiency [%] V 230V 90V P OUT [W] 40

41 150 W Cool Operation 100 PFC GaNFast 85 C LLC GaNFast 70 C PFC Inductor 90 C AC Bridge 85 C LLC Transformer 90 C SR FETs 85 C V AC, 150 W, 25 C, uncased, no airflow 41

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