202 ESD Design and Analysis Handbook
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1 Index 201 A activation energy, 12 active area bonding, 122 adiabatic, 41, 61, 126 AHDL,193 air ionizers, 20, 87, 92 ambient temperature, 185 Amerasekera, 56, 58, 59, 62, 63, 151,153,154,155, 177, 178, 179 amplitude, 162, 163, 173, 174 Anderson, 56, 83, 106, 107, 108, 109, 122, 148, 154 anode, 32, 118, 136, 146, 189 anomalies, 39, 68, 69 ANSI, 22 antistatic coating, 13 assembly, 7,10,19,53,85,86, 102 auditing, 91, 104, 106 audits, 103 automated handlers, 103 automated testing, 19 avalanche, 32, 35, 38, 39, 49, 80, 117,130,132,158,174,191 avalanche breakdown, 32, 38, 49, 117,130,132,158,174 avalanche multiplication, 49, 191 B ballasting, 81, 187 BaneQee,59, 126, 149, 151,200 Barth, 149, 174, 178, 179 base-emitter junction, 49, 89, 116, 132, 138 behavioral model, 183 Benjamin Franklin, 5 Bernier, 57, 58, 89, 108, 122, 148, 149, 150, 152, 178, 180, 199, 200 bipolar junction transistor, 49, 132 blocking diodes, 128 bond wires, 8, 19, 28, 68, 76, 96 boundary conditions, 197 breakdown voltage, 30, 32, 39, 50, 80,81,117,118,125, 135, 137, 139, 142, 143, 159, 190 Brin, 103, 109 burn-in, 8, 53 c C code, 193 calibration, 19, 22, 25, 178, 179, 198 Calvin, 21, 57 capacitance, 11, 16, 19,21,23,26, 27,30,41,42,47,74,94,114, 117,118,123,128,132,134, 138,141,143,166, 169, 170, 174, 186, 187 capacitive coupling, 33, 195 capacitor, 23, 24, 29, 30, 33, 35, 41,97, 112, 114, 116, 120, 128, 129,136,160,174,176, 187, 195 carriers, 8, 49, 50, 77, 90, 96, 97, 100,130 cathode, 7, 18, 32, 118, 136, 146, 189 cathode ray tube, 7, 18 CD4001, 183, 184, 185, 195 charge bleed off, 19 charge conduction, 111 charge dissipation, 96, 104 charge flow, 2, 3, 15,27, 112, 113, 132 charge generation, 6,15, 16, 17, 19,91,92,94,99, 102, 103, 104 charge injection, 33, 44, 48, 49 charge separation, 3, 5 charge transfer, 5, 11, 174, 194 charged device model, 24, 151 Chase, 11,21,57,60,94, 106, 152 Chubb, 96, 106
2 202 ESD Design and Analysis Handbook circuit protection, 10, 16,29, 121 clamp voltage, 139, 142, 144 clamping properties, 177 clamping voltage, 122, 126, 134, 135, 136, 138, 141, 142, 158, 172, 194 classification, 65 common ground, 95, 103, 104 conduction, 12, 15, 16, 19,29,30, 31,32,33,34,35,36,38,40, 41,49,80, 111, 118, 125, 128, 130, 134, 136, 137, 138, 141, 147, 158, 159, 161, 162, 163, 182, 183, 190, 191 conduction mechanisms, 33, 34, 36, 191 conduction paths, 12,29,30,31, 40,138 conductivity, 7, 10, 19,91,92, 137 conductivity modulation, 137 conductor,42,52,88 constant current TLP tester, 162 constant impedance TLP tester, 164 continuity equations, 184, 196 controlled discharge, 3 controlled sources, 193 converge, 185, 187 corona discharge, 19,21,92,93 corrective action, 9, 65, 66, 69, 80, 81 Croft, 58, 148, 149, 150, 152, 154, 155, 178, 180, 199,200 crowbar, 117, 118 cumulonimbus, 5 current density, 14,36,37,48,49, 111, 125, 126, 128, 144, 188 current handling capability, 42, 142, 172, 177, 191 current magnitude, 173 current multiplier, 190 curve tracer, 71, 159, 162 D decapsulation, 68 decay time, 92, 96, 142 decoupling capacitor, 114, 115, 142 deencapsulation, 75, 76 delta limit, 46, 54 depletion region, 32, 35, 77, 137 deprocessing, 78 design review, 148 device characterization, 159, 161 device level modeling, 183 device level simulation, 174, 183, 185, 198, 199 device simulator, 183 Diaz, 56, 63, 153, 154, 177 dielectric breakdown, 33 dielectric rupture, 48, 52, 53, 80, 111 dielectric strength, 35, 41, 50, 52, 54,81,128 diffused resistor, 12,29,41,52, 127, 128 diode,29,30,32,33,38,45,72, 73,81, 117, 118, 119, 128, 130, 132, 135, 136, 137, 138, 140, 141,146,163,188,189, 190, 191,195,197 Dion, 126, 151 dipole, 5 discharge path, 3, 16,25,47,85, 90,95,97,99, 111, 112, 114, 116,120,134,137,141,174 discrete elements, 186 displacement current, 125, 143, 174 dissipative, 8, 20, 94, 95, 96, 97, 10 1, 102, 104 dopant, 50 doping profiles, 44, 197, 198 dry etch, 78 dual diode protection, 143
3 Index 203 duration, 21, 42,92, 134, 142, 162, 163 dv/dt triggering, 125, 135 dynamic impedance, 138 dynamic resistance, 122, 125, 135, 158, 159, 177 E EIAJ,22 electric field, 5, 15, 17, 18,21,37, 38,39,41,42,44,48,49,50, 93,98,103, Ill, 112, 125,128, 197 electrical overstress, 10, 53, 63, 121, 157 electrical signature, 68, 69 electrical verification, 76 electromagnetic interference, 97, 120 electromigration, 126 electron current, 191 electrostatic adhesion, 86 electrostatic force, 3, 6, 16 electrostatic repulsion, 88 electrothermal, 63 element hierarchy, 183 Environmental Protection, 85, 91 ESD Association, 102, 108 ESD characterization, 161, 175, 176 ESD classification, 65 ESD Protection, 13, 15,58,59,60, 106, 109, 115, 148, 149, 153, 154,155,177,178,179, 187, 188,200 ESD Protection Program, 15 ESD threshold, 22, 37,46,47,54, 65, 112, 123, 143, 146, 148, 158, 161, 163, 172, 182, 195 ESD tolerance, 10,22,47, 113, 115 explosive, 4 F failure analysis, 9, 46, 65, 66, 67, 68,71,75,76,77,78,82,84, 103, 174 failure criteria, 175 failure mechanisms, 12, 48, 53, 54, 65, 79, 162 failure mode, 26, 48, 62, 68, 71, 175 failure point, 126, 182 failure verification, 75 Faraday cup, 102 Faraday shield, 100 field strength, 5, 41, 42 figure of merit, 143, 172, 173 filamentation, 48, 50, 53, 68, 80, 128,173 finger cots, 99 flammable, 4 floor mats, 97 flooring, 13,94,97,99, 106 footwear, 11,21,94,97,99,106, 108 forward conduction, 32, 136 functional test, 46, 54, 69, 71, 75 fused resistor, 68 G GaAs, 42, 54, 63 Gao, 199 garment, 104, 108 gate oxide, 14, 41, 42, 43, 44, 48, 52,54,69,81,89,173,195 gate rupture, 67 Gendron, 128, 152 generation current, 191 ggnmos, 135, 158 ground,4,5,8, 12, 16,20,24,25, 26,27,29,32,73,88,94,96, 97, 103, 104, 107, 108, 114, 115, 136, 143, 166
4 204 ESD Design and Analysis Handbook grounded gate, 135, 158, 174, 191 grounding, 8, 17, 25, 88, 94, 96, 97,98,100,102,104 H Halperin, 104, 106, 109 heel straps, 13 Hermetic, 68 high current behavior, 158, 159 high current conduction, 182, 183 high current phenomenon, 27, 112 holding current, 118 hole current, 184, 191, 193, 196 holes, 49, 191 Hot carrier injection, 44 Hot plug, 123 human body model, 11, 22, 106, 114, 179 humidity, 19, 20, 92 hydrometeors, 5 I IDDQ, 54, 64, 75,82 ideal resistor, 169, 185, 188 lec,22,120 ignition energy, 4 ignition source, 4 impact ionization, 191 impedance, 3, 11, 12, 17, 19,21, 23,25,27,29,30,32,33,39, 42,47,69,78,88,89,90,91, 99, 104, Ill, 112, 114, 116, 117,118,123,125,132,134, 138, 162, 164, 168, 170, 186, 188 impurities, 6, 7 induction, 16, 97 inductive charging, 17, 18 infant mortality, 8 insulator, 2, 3, 7, 8, 16, 42, 86, 88, 91,97 intangible cost, 9, 10 interconnect lines, 40 internal probing, 68, 78 ion balance, 93 ionic contamination, 53, 67 ionization, 92, 102 ionizers, 7, 10, 13, 19,21,92,93, 97, 103, 104 IR drop, 81, 138, 143 JEDEC,22 Jonassen, 4, 55 joule heating, 42, 48, 196 junction depths, 40 junction leakage, 49, 73 J K Kende,94,106 Khurana, 161, 178 L latchup, 45, 135 latency, 52, 54 latent damage, 52, 53, 54, 55 latent failure, 48, 52 lattice heating, 184 leakage, 33,46,48,49,50,53,54, 69,71,72,73,74,76,78,89, 123, 128, 134, 138, 139, 165, 175, 187 leakage current, 33, 46, 49, 50, 53, 69, 71, 72, 73, 76, 78, 89, 123, 138, 139, 188 Lee, 59, 61, 84, 154, 155, 174, 178,180,199,200 lightly doped drain, 44, 121 lightning, 5 Liou,9,54,56, 126, 151, 178, 180,199,200 liquid crystal, 76, 77 local ionizers, 13, 97
5 Index 205 logic gate model, 183 LVTSCR,135 M Machine Model, 22, 23, 25 macro modeling, 193 Maloney, 59, 151, 154, 155, 161, 178 Manso, 94, 106 mask,6,45,53,175 matched load, 168, 169, 170, 171, 172 McFarland, 103, 109 Mesa, 43 MESFET, 54, 63 metal oxide varistor, 117 metal routing, 38, 39, 143, 146, 148 metallurgical junction, 32, 197 model equations, 188, 193 model file, 185 model parameters, 157, 185, 190 modeling, 157, 181, 182, 183, 184, 188, 193, 196, 197, 199 modeling space, 182 MOS transistors, 135, 143 MOSFET, 30, 31, 33, 45, 49, 50, 52,59,61, 128, 129, 131, 141, 153,155,177,188, 191, 199, 200 N neutralization time, 93 NiCr, 60,61,62, 127, 152 non-linear behavior, 186 non-socketed, 26 Notermans, 59, 175, 178 NPN,45, 115, 130, 139, 155, 174, 191 nuclear, 92 nuclear decay, 92 o operational amplifier, 18,29,89 operational space, 181, 185 overstress, 28, 53, 182 overstress conditions, 28, 182 oxide rupture, 49, 53, 80, 81 oxide thickness, 40, 89 p package, 7,8,17,19,24,25,26, 28,47,68,69,71,76,86,100, 101, 122, 134 parasitic, 23, 24, 26, 28, 29, 30, 32,40,41,42,45,123,128, 129, 130, 132, 135, 138, 141, 149, 159, 163, 166, 169, 170, 173, 174, 176, 177, 187, 191, 192, 193, 194, 195 parasitic effects, 149, 187 parasitic elements, 23, 24, 29, 30, 32,41,163,166,170,173,176, 194, 195 particle contamination, 86, 96 passive components, 125, 181, 186 peak current, 12, 19,21,23,24, 25,52, 112, 127, 136, 160, 162, 173,174 Petroleum Equipment Institute, 4, 55 pick-and-place, 8 p-n junction, 33, 49 Poisson equation, 184, 196 polarized charge, 17 Polysilicon, 37, 60 precharge voltage, 168, 170 probabilistic, 12, 89 probability density function, 12 process simulator, 198 process variability, 15 programming language, 193
6 206 ESD Design and Analysis Handbook pulse width, 160, 162, 163, 173, 174, 175, 187 punch through, 128, 139 R R-2R matched load, 169 Radiation hardened, 124 Ramaswamy, 154, 177 rectangular pulse, 174 recycling, 9 reflected energy, 163 reflections, 164 relative humidity, 10, 19,86,92 reliability, 44, 49, 53, 54 resistivity, 7, 19,49,96,97, 104 reverse diode conduction, 33 risetime, 114 Roesch, 54, 63 root cause, 66, 78, 79 Ruba1cave, 54, 63 s sapphire, 42, 63 scaling, 40, 41, 44, 121, 122, 143, 151, 176 second breakdown, 49,50,62,80, 130, 159 self protection, 10 self-protecting, 80, 81, 121, 126, 195 sheet resistance, 95 shielding, 94, 103, 120 shipping, 8, 89, 101 shorting clips, 101 SiCr, 127 silicide, 44, 131, 134, 198 silicide block, 131, 134 silicon controlled rectifier, 135 simulation, 63, 142, 157, 174, 181, 182, 183, 185, 186, 187, 188, 194, 195, 197,198, 199,200 simulation schematic, 186, 194, 195 simulation space, 181, 182, 198 skin resistance, 21, 23 smock, 104 snap back, 80,131, 132, 159, 174, 191 snapback, 45, 159, 170, 174, 177, 191 socketed, 26 Sal, 42, 43, 149, 177 SOS, 42, 43, 63, 153 spark gap, 118 SPICE, 185, 186, 188, 189, 190, 191,193,194, 198, 199 Standards, 22, 149 static clamps, 134, 138, 142 static dissipative foam, 101 static electricity, 2, 6, 7, 92 subcontractor, 86 subroutine, 193 substrate, 29, 128, 130, 132, 187, 191, 199 substrate current, 191 substrate resistance, 191, 199 supply clamp, 114, 124, 138, 141, 142, 143, 144, 188, 191, 195 supply current, 46, 48, 54, 69, 71, 73,74,75,82,123 surface charge, 33, 88 surface resistance, 96, 97 sustaining voltage, 35, 45, 130, 159 tangible cost, 9 Tasca, 61, 62, 152 Teems, 122, 148 temperature dependence, 188 test vector, 74, 75 thermal mass, 48, 125 thermal resistance, 48 T
7 Index 207 thermal runaway, 48,128,131 thermal voltage, 190 thermally generated carriers, 130 thin film resistor, 14, 127, 128 thyristor, 118 topical sprays, 97 training, 9, 10, 100 transient clamp, 134, 141, 142 transient voltage suppression, 117, 118 transient voltage suppressors, 116, 117 transistor level model, 183, 185 transmission line, 126, 161, 162, 163, 164, 168, 170, 178, 186 transmission line pulse, 126 triboelectric charging, 3, 7, 17, 86 triboelectrification, 3, 16, 17, 19, 21,87,102 trigger, 15,30,35,45, 75, 76, 112, 118,119,121,123, 124, 125, 126, 132, 134, 135, 138, 141, 142,174,175, 191,195 trigger voltage, 35, 124, 135, 138, 142 U Unger, 11,21,56,57,94,105,109 v vaporization, 126 verification, 71, 148 Vinson, 9, 18,30,41,54,56,59, 60, 61, 126, 151 Voldman, 126, 149, 151, 155, 176, 180 voltage clamp, 117, 190 voltage probe, 166, 168 voltage source, 2, 163, 186, 187 W wafer, 6, 7,15,40,45,53,65,85, 86,90,91, 121, 125, 157, 186, 194, 198, 199 wafer fabrication, 6, 7, 40, 65, 85, 86,90,91,125,157,194,198, 199 VVagner, 9, 56,60, 179 walking wounded, 52 VVaveform, 164, 166 VVeaver, 152 work function, 16 workbench, 20, 96, 100 workstation, 91, 94, 95, 96, 97, 98, 100, 103, 104 wrist strap, 13, 98 Yeh, 161, 178 Yots, 152 y Z Zener, 30, 117, 118, 119, 138, 141,189,190
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