SPHV-C Series 200W Discrete Bidirectional TVS Diode

Transcription

1 SPHV-C Series W Discrete Bidirectional TVS Diode RoHS Pb GREEN Description The SPHV-C series is designed to replace multilayer varistors (MLVs) in portable applications, LED lighting modules, and low speed I/Os. It will protect sensitive equipment from damage due to electrostatic discharge (ESD) and other overvoltage transients. The SPHV-C series can safely absorb repetitive ESD strikes above the maximum level of the IEC-- international standard (Level, ±kv contact discharge) without performance degradation and safely dissipate up to A (SPHV-ETG-C) of induced surge current (IEC--5, t P =/μs) with very low clamping voltages. Pinout Features ESD, IEC--, ±3kV contact, ±3kV air EFT, IEC--, A (5/5ns) Lightning, IEC--5, A (t P =/μs, SPHV- ETG-C) Low clamping voltage Low leakage current Small SOD packaging helps save board space AEC-Q qualified Functional Block Diagram Applications LED Lighting Modules Portable Instrumentation General Purpose I/O Mobile & Handhelds RS3 / RS5 CAN and LIN Bus Life Support Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. Littelfuse, Inc. Revised: /7/

2 Absolute Maximum Ratings Symbol Parameter Value Units P pk Peak Pulse Power ( =/μs) W T OP Operating Temperature - to 5 C T STOR Storage Temperature -55 to 5 C Notes: CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Rating Units Storage Temperature Range -55 to 5 C Maximum Junction Temperature 5 C Maximum Lead Temperature (Soldering -s) C SPHV-ETG-C Electrical Characteristics (T OP =5ºC) μa. V =ma 3.3 V =V. μa Clamp Voltage V C =A, =/µs, Fwd 9. V =A, t P =/μs, Fwd 5. V Dynamic Resistance R DYN =ns, I/O to GND. Ω =/µs. A ESD Withstand Voltage V ESD IEC-- (Contact Discharge) ±3 kv IEC-- (Air Discharge) ±3 kv Diode Capacitance C D-GND Reverse Bias=V, f=mhz 3 pf Transmission Line Pulse (TLP) with ns width and ps rise time. SPHV5-ETG-C Electrical Characteristics (T OP =5ºC) μa 5. V =ma.7 V =5V. μa I Clamp Voltage PP =A, =/µs, Fwd. V V C =5A, =/µs, Fwd 3. V Dynamic Resistance R DYN =ns, I/O to GND.3 Ω =/µs 5. A ESD Withstand Voltage V ESD IEC-- (Contact Discharge) ±3 kv IEC-- (Air Discharge) ±3 kv Diode Capacitance C I/O-GND Reverse Bias=V, f=mhz pf Transmission Line Pulse (TLP) with ns width and ps rise time. Littelfuse, Inc. Revised: /7/

3 SPHV-ETG-C Electrical Characteristics (T OP =5ºC) μa. V =ma.7 V =V. μa I Clamp Voltage PP =A, =/µs, Fwd 3. V V C =3A, =/µs, Fwd 5. V Dynamic Resistance R DYN =ns, I/O to GND.5 Ω =/µs 3. A ESD Withstand Voltage V ESD IEC-- (Contact Discharge) ± kv IEC-- (Air Discharge) ±3 kv Diode Capacitance C I/O-GND Reverse Bias=V, f=mhz 7 pf Transmission Line Pulse (TLP) with ns width and ps rise time. SPHV3-ETG-C Electrical Characteristics (T OP =5ºC) μa 3. V =ma. V =3V. μa I Clamp Voltage PP =A, =/µs, Fwd 5. V V C =A, =/µs, Fwd 5. V Dynamic Resistance R DYN =ns, I/O to GND.33 Ω =/µs. A ESD Withstand Voltage V ESD IEC-- (Contact Discharge) ±5 kv IEC-- (Air Discharge) ± kv Diode Capacitance C I/O-GND Reverse Bias=V, f=mhz 3 pf Transmission Line Pulse (TLP) with ns width and ps rise time. Non-Repetitive Peak Pulse Power vs. Pulse Time Peak Pulse Power - P pk (kw)... Pulse Duration - tp (µs) Littelfuse, Inc. Revised: /7/

4 Pulse Waveform SPHV-ETG-C Transmission Line Pulsing(TLP) Plot Percent of % % 9% % 7% % 5% % 3% % % SPHVC % Time (μs) SPHV5-ETG-C Transmission Line Pulsing(TLP) Plot SPHV-ETG-C Transmission Line Pulsing(TLP) Plot SPHV5-C SPHV-C SPHV3-ETG-C Transmission Line Pulsing(TLP) Plot SPHV3-C Littelfuse, Inc. Revised: /7/

5 Temperature TVS Diode Arrays (SPA Diodes) Power Derating Curve Pulse Waveform % of Rated Power Ambient Temperature - TA ( o C) Percent of % % 9% % 7% % 5% % 3% % % % Time (μs) Soldering Parameters Reflow Condition - Temperature Min (T s(min) ) 5 C Pb Free assembly T P Ramp-up t P Critical Zone TL to TP Pre Heat - Temperature Max (T s(max) ) C - Time (min to max) (t s ) secs Average ramp up rate (Liquidus) Temp (T L ) to peak T S(max) to T L - Ramp-up Rate 3 C/second max 3 C/second max T L T S(max) T S(min) t S Preheat t L Ramp-down Reflow - Temperature (T L ) (Liquidus) 7 C - Temperature (t L ) 5 seconds 5 time to peak temperature Time Peak Temperature (T P ) +/-5 C Time within 5 C of actual peak Temperature ( ) seconds Ramp-down Rate C/second max Time 5 C to peak Temperature (T P ) minutes Max. Do not exceed C Product Characteristics Lead Plating Pre-Plated Frame Lead Material Copper Alloy Lead Coplanarity. inches (.mm) Substitute Material Silicon Body Material Molded Epoxy Flammability UL 9 V- Ordering Information Part Number Package Marking Min. Order Qty. SPHV-ETG-C SOD B SPHV5-ETG-C SOD B5 SPHV-ETG-C SOD B SPHV3-ETG-C SOD B Notes :. All dimensions are in millimeters. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr.. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI -3. Littelfuse, Inc. Revised: /7/

6 Part Marking System Part Numbering System SPHV** E T G C B * : SPHV-ETG-C 5: SPHV5-ETG-C : SPHV-ETG-C : SPHV3-ETG-C TVS Diode Arrays (SPA Diodes) Voltage Number of Channels Package E: SOD Bidirectional G= Green T= Tape & Reel Package Dimensions SOD Package SOD Symbol JEDEC MO-3 Millimeters Inches Min Typ Max Min Typ Max A B C D.5. E F Recommended Soldering Pad Layout Embossed Carrier Tape & Reel Specification SOD Feeding Direction Top mark and pin direction in Tape and Reel Symbol Millimeters A.7+/-.5 B.+/-.5 C.5+/-.5 d.55+/-. E.75+/-.5 F 3.5+/-.5 P.+/-. P.+/-. P.+/-. W BX Littelfuse, Inc. Revised: /7/