Product Catalog. Discrete Semiconductors.

Transcription

1 Product Catalog Discrete Semiconductors 2007-Dec.

2 NEW Low Voltage 1.5V Drive MOSFETs ECOMOS TM series Compact switches are increasingly moving towards low voltage drive. This series responds to those needs. VMT3 EMT3 EMT6 TUMT3 TSMT6 P.5 Complex MOSFETs for Mobile Device Power These MOSFETs combine a low ON-resistance MOSFET with a Schottky barrier diode in a single compact, thin package, reducing the amount of space required. TUMT5 TSMT5 TSMT6 P.6 NEW MPT6 Package Dual MOSFETs This high-power series features the same package power as conventional SOP8 units, but in a package 40% smaller. MPT6 P.7 MOSFETs for High Efficiency DC/DC Converters This high performance series uses the latest in element / packaging technology to provide high power supply efficiency to DC/DC converters. 1 PSOP8S PSOP8 P.8

3 Small Signal MOSFETs This series is optimized for compact (1208 to 2916 size), small current (up to A) applications. VMT3 EMT3 UMT3 SMT3 P.11 Middle Power MOSFETs This versatile series meets the demand for reduced mounting space while maintaining a certain current level. TUMT6 TSMT6 MPT3 P.12 Power MOSFETs This series is ideal for large current applications (up to 15A) requiring high voltage resistance (600V max.). SOP8 CPT3 TO-220FM P.13,14 NEW High-speed Switching High Voltage Resistance MOSFETs This high performance, high speed switching series reduces switching loss by 30% compared to conventional products. (500 to 600V) LPTS TO-220FM P.10 NEW TCPT Package MOSFETs High-power series ; The same mounting space as the one for conventional CPT3 package : yet more current is applicable. TCPT P.9 2

4 MOSFET Lineup Low Voltage 1.5V Drive MOSFETs RDS(on) Typ.(mΩ VGS=1.5V VGS=2.5V VGS=4.5V VMT3 EMT RUM003N Ω 1 0.8Ω 0.7Ω 0.15 RUE003N Ω 1 0.8Ω 0.7Ω EM6K Ω 1 EMT6 0.8Ω TUMT3 0.8 RUF025N Ω RUF015N Pch RZF030P RUL035N TUMT6 1 Pch RZL035P US6K TSMT3 1 RUR040N Pch RZR040P TSMT RUQ050N Pch RZQ050P Under Development 1 VGS=1.8V VGS=4V Page P.5 Complex MOSFETs for Mobile Device Power TSMT5 TUMT TSMT SBD(1A) +SBD(A) +SBD(0.7A) Pch+SBD(1A) Pch+SBD(A) Pch+SBD(A) VGS=1.5V RDS(on) Typ.(mΩ VGS=2.5V VGS=4V VGS=4.5V VGS=10V Qg(nC) VGS=4.5V SBD(0.7A) US5U SBD(A) QS5U12 QS5U17 QS5U13 QS5U16 QS5U34 QS5U36 QS5U21 QS5U27 QS5U28 QS5U33 QS5U23 QS5U26 QS6U22 QS6U24 US5U1 US5U2 VGS=1.8V Pch+SBD(A) US5U Pch+SBD(0.7A) US5U Pch+SBD(0.1A) US5U TUMT6 1 +SBD(0.7A) US6U VGS=5V Page P.6 3

5 MOSFET Lineup MPT6 Package Dual MOSFETs RDS(on) Typ.(mΩ Qg(nC) VGS=4V VGS=4.5V VGS=10V VGS=5V Page MP6K MP6K MP6K MPT P.7 MP6M Pch MP6M Under Development MOSFETs for High Efficiency DC/DC Converters PSOP8S 2.8 PSOP VGS=2.5V RDS(on) Typ.(mΩ VGS=4V VGS=4.5V VGS=10V Qg(nC) VGS=5V Qgd (nc) RQA130N RQA180N RQA200N RQW130N RQW180N RQW200N RTW060N Page P.8 TCPT Package MOSFETs RDS(on) Typ.(mΩ VGS=4V VGS=4.5V VGS=10V RSY200N TCPT 20 RSY300N Pch RSY160P Under Development Qg(nC) VGS=5V Page P.9 High-speed Switching High Voltage Resistance MOSFETs TO-220FM LPTS R5007ANX R5009ANX R5013ANX R5016ANX R6008ANX R5007ANJ R5009ANJ 100 R5016ANJ RDS(on) Typ.(Ω VGS=10V Qg(nC) VGS=10V Page P.10 4

6 ECOMOS TM Low Voltage 1.5V Drive MOSFETs Features Summary Applications Energy saving Stable low voltage drive The development of a new low voltage drive process has enabled operation at VGS = 1.5V General load switch drives, LED lamp drives, Muting circuits, DC/DC converters, Switch for charger control, and the like. A new low-voltage drive process ensures stable operation at VGS = 1.5V. ON-resistance is also significantly reduced compared to conventional 2.5V products, resulting in 20 to 85% less power consumption when ON. Circuit example ON-resistanceRDS(on) (Ω) ON-resistance comparison Conventional Product (2.5V drive) 1.5V drive Drive voltagevgs(v) 4 5 Load switch driveled lamp driver Muting circuit Battery DC/DC Converters Switch for charger control Lineup VMT RUM003N EMT RUE003N EMT EM6K RUF015N TUMT3 0.8 RUF025N Pch RZF030P RUL035N TUMT6 1 Pch RZL035P US6K TSMT3 1 RUR040N Pch RZR040P TSMT RUQ050N Pch RZQ050P Note) Please see p.17 for the internal circuitry Under Development RDS(on) Typ.(mΩ Internal VGS=1.5V VGS=2.5V VGS=4.5V Circuitry 1Ω 1 0.8Ω 2 0.7Ω 1Ω 1 0.8Ω 2 0.7Ω 1Ω 1 0.8Ω 2 0.7Ω VGS=1.8V 2 VGS=4V 5

7 Complex MOSFETs for Mobile Device Power QS5U, QS6U, US5U series Features Summary Applications Space saving Delivers high power: 1.25W and 1.0W in mounting areas of mm (QS5U, QS6U) and 2.1 mm (US5U), respectively. A low ON-resistance MOSFET and a Schottky barrier diode are integrated into a single package, reducing mounting area. Mobile device Power supplies Excellent thermal conductivity The frame shape and materials were modified to create a thin, compact package with excellent thermal conductivity (package power). The QS5U and QS6U series features a package power of 1.25W, while the US5U series delivers a power rating of 1.0W. QS5U series (TSMT5) US5U series (TUMT5) 1.25W 1.0W (Unit:mm) Reduces mounting space Combining a low ON-resistance MOSFET with a Schottky barrier diode in one package reduces the number of parts in the mobile device power supply block, contributing to end-product miniaturization. Power supply circuit PWM IC Single package design Vin Vout Lineup RDS(on) Typ.(mΩ Qg(nC) Internal VGS=1.5V VGS=1.8V VGS=2.5V VGS=4V VGS=4.5V VGS=10V VGS=4.5V Circuitry +SBD(1A) QS5U QS5U QS5U SBD(A) QS5U QS5U TSMT SBD(0.7A) QS5U QS5U Pch+SBD(1A) QS5U QS5U QS5U Pch+SBD(A) QS5U QS5U TSMT Pch+SBD(A) QS6U QS6U SBD(0.7A) US5U SBD(A) US5U US5U TUMT5 1 Pch+SBD(A) US5U Pch+SBD(0.7A) US5U Pch+SBD(0.1A) US5U TUMT6 1 +SBD(0.7A) US6U Note) Please see p.17 for the internal circuitry. VGS=5V 6

8 MPT6 Package Dual MOSFETs MP6K, MP6M series Features Summary Applications High power Space saving High performance The frame pattern was optimized to create a compact package requiring 40% less mounting area while delivering the same package power as the conventional SOP8. Power management circuit, Motor drive circuit, Amusement equipment Excellent package power Provides the same package power as the SOP8 (5060 size) in the 4540 size. 1.2 Space-saving, Thin, Low ON-resistance Delivers the same low ON-resistance as the SOP8 (5060 size) in a package 40% smaller and 40% thinner. Package power: PD(W) MPT6 SOP Outline Board size(mm 2 ) 5.0 SOP8 6.0 The new industry standard MPT6 40% smaller Front side Back side % thinner 1.0 (Unit:mm) Circuit example DC/DC Converters Motor drive circuit VCC VIN PWM Control IC VOUT Half bridge Full bridge 3-Phase motor control Lineup MPT6 + +Pch Note) Please see p.17 for the internal circuitry 7 RDS(on) Typ.(mΩ Under Development Qg(nC) VGS=5V VGS=4V VGS=4.5V VGS=10V MP6K MP6K MP6K MP6M63 MP6M Internal Cuircuitry

9 MOSFETs for High Efficiency DC/DC Converters RQA, RQW series Features Summary Applications High power Energy saving High performance Excellent element and package characteristics make this series ideal for optimizing the efficiency of DC/DC converters. DC/DC converter Superior power supply efficiency The element and package are optimized for DC/DC converters. Specially designed low ON-resistance / fast switching elements are encapsulated in high-power PSOP8S and PSOP8 packages that have the same mounting area as SOP8 package but can handle 40% or greater package power. Also, power supply efficiency is dramatically improved, which contributes to low-current drive (energy-saving) of electric appliances. DC/DC converter power supply efficiency ratings Efficiency() Vin=19V Vout=1.3V Conventional product RQA130N03 RQA200N03 Conventional ratio 10% improvement Load current(a) Circuit example The RQA series delivers maximum performance when used with RQW series in pairs as high-side and low-side switching devices in the large-current DC/DC converter. DC/DC converter circuit VCC PWM Control IC VIN High side MOSFET VOUT Low side MOSFET Lineup RDS(on) Typ.(mΩ Qg(nC) Qgd VGS=2.5V VGS=4V VGS=4.5V VGS=10V VGS=5V (nc) RQA130N PSOP8S 2.8 RQA180N RQA200N RQW130N PSOP8 3 RQW180N RQW200N RTW060N

10 TCPT Package MOSFETs Features Summary Applications Thin High power The same mounting space as the one for conventional CPT3 package : yet more current is applicable. LCD backlight inverters Motor drive circuit High power, Thin Improvement of heat-radiation efficiency has enable higher current intake with the same mounting space as the one for conventional CPT3 package. CPT (Unit:mm) % Thinner 9.5 Circuit example Controlling heat emission is a major challenge with large LCDs. The high power TCPT package helps reduce heat dissipation in the backlight inverter circuit. LCD backlight inverter circuit Motor drive circuit 24VIN Control CCFL / EEFL Half bridge Full bridge 3-Phase motor control Lineup TCPT 20 Pch RSY200N05 RSY300N05 RSY160P05 Under Development RDS(on) Typ.(mΩ Qg(nC) VGS=4V VGS=4.5V VGS=10V VGS=5V

11 High-speed Switching High Voltage Resistance MOSFETs Features Summary Applications High power Energy saving High performance This high-performance series was developed using a new high voltage resistance process that enables fast switching and low ON-resistance. Switching power supplies High-speed switching (Low switching loss) A new low ON-resistance process reduces ON-resistance by 50% over conventional units, significantly improving switching speed (by 30%) while reducing switching loss. The lineup is available in two different power packages, TO-220FM and LPTS, featuring lower heat emission. ON-resistance comparison RDS(on) Qg(ΩnC) Conventional product RDX series 10 New R50R60 series VDSS(V) Switching speed comparison Conventional product ID [V] nsec VDS Speed 30% improvement [A] [V] RDS(on) 50% Reduction R50R60 series ID 140nsec VDS [A] Circuit example Ideal for use in the PFC block, requiring low ON-resistance, and in switching (SW) circuits in the switching power supply, where switching speed is of critical importance. Switching power supply circuit (Primary) IC IC PFC SW Lineup Package PD(W) Polarity Part No. VDSS(V) ID(A) RDS(on) Typ.(Ω Qg(nC) VGS=10V VGS=10V 40 R5007ANX R5009ANX TO-220FM R5013ANX R5016ANX R6008ANX R5007ANJ LPTS 50 R5009ANJ R5016ANJ

12 Small Signal MOSFETs MOSFET Lineup RDS(on) Typ.(Ω VGS=2.5V VGS=4V VGS=4.5V VGS=10V 2SK VMT Pch RTM002P RSM002P EMT Pch 2SK3019B SK RTE002P RSE002P EMT EM5K EMT EM6K Pch EM6M SK RJU003N RHU003N UMT3 RJU002N RHU002N Pch RTU002P RSU002P UMT UM5K1N UMT UM6K1N SST3 RK max. 7.5 max. RK7002A SK SMT3 RJK005N RHK005N RHK003N SMT6 + SM6K VGS=5V 11

13 Middle Power MOSFETs Package PD(W) polarity Part No. VDSS(V) ID(A) RDS(on) Typ.(mΩ MOSFET Lineup Qg(nC) VGS=4.5V VGS=2.5V VGS=4V VGS=4.5V VGS=10V RTF015N RTF025N RSF014N TUMT3 0.8 RTF010P Pch RTF015P RTF020P RSF010P RTL035N US6K US6K RTL020P Pch RTL030P TUMT6 1 RSL020P Pch+Pch US6J Pch US6M US6M RTR025N RTR040N RSR025N RTR020N RTR011P TSMT3 1 RTR020P RTR025P Pch RTR030P RSR015P RSR020P RSR025P TSMT QS5K RTQ020N RTQ035N RTQ045N RSQ020N RSQ035N RSQ045N RVQ040N QS6K RTQ025P RTQ030P RTQ035P TSMT Pch RTQ040P RSQ025P RSQ030P RSQ035P Pch+Pch QS6J QS6J Pch QS6M QS6M RJP020N MPT3 RHP030N RHP020N :When mounted on a ceramic board. VGS=5V 12

14 MOSFET Lineup Power MOSFETsSOP8 RSS065N03 RDS(on) Typ.(mΩ VGS=4V VGS=4.5V VGS=10V Qg(nC) VGS=5V RSS090N RSS100N RSS110N RSS125N RSS130N RRS070N RRS090N RRS100N RRS110N RRS125N RRS130N RSS070N RSS080N RSS085N RSS095N RSS065N SP8K SOP8 SP8K SP8K SP8K SP8K SP8K SP8K SP8K SP8K SP8K SP8K SP8K SP8K SBD SP8K10S RSS040P RSS050P Pch RSS075P RSS090P RSS060P RSS070P SP8J Pch+Pch SP8J SP8J SP8J SP8J

15 MOSFET Lineup Power MOSFETsSOP8 SP8M2 VGS=4V VGS=4.5V VGS=10V Qg(nC) VGS=5V SP8M SP8M SP8M SOP8 +Pch SP8M SP8M SP8M SP8M SP8M SP8M SP8M Ω Ω 8 VGS=10V Power MOSFETsCPT3, TO-220FN, TO-220FM Package PD(W) Polarity Part No. VDSS(V) ID(A) RDS(on) Typ.(Ω VGS=4V VGS=10V 10 2SK SK CPT3 RK3055E Max. 20 2SK RSD200N TO-220FN TO-220FM RDD050N RDN050N RDN100N RDN150N RDN080N RDN120N RDX050N RDX080N RDX120N RDX030N RDX045N RDX060N RDX100N

16 (Unit: mm) VMT3 (1) Gate (2) Source Drain (1)(2) EMT3 SC-75A SOT EMT5 1.0 (5) (4) EMT6 1.0 (6) (5) (4) (1) Source (2) Gate Drain UMT3 SC-70 SOT-323 (2) 1.0 (1) Min. 0.7 UMT5 SC-88A SOT (5) (4) UMT6 SC-88 SOT (6) 1.3 (5) (4) (1) Source (2) Gate Drain TUMT3 TUMT (5) (4) Max Max. TUMT6 (1) (2) (6) (5) (4) Max Max. (1) Gate (2) Source Drain SMT3 SC-59 SOT-346 (1) Source (2) Gate Drain TSMT3 TSMT Max SMT6 SC-74 SOT-457 TSMT6 0.3 (4) 0.3 (5) (6) (2) (1) 1.0Max (4) (5) (6) (5) (4) (1) Gate (2) Source Drain SST3 SOT-23 MPT3 SC-62 SOT ~ (1) (2) (2) (1) Min. 0.85Max Max. 0.1Min. 0.1Min. Surface Mount Type (1) (2) (2) (1) Max Min Min. 2.8 (1) 1.9 (2) Min. 0.3~0.6 MPT6 0.3~ (2) (1) (1) (2) (1) Source (2) Gate Drain (1) Gate (2) Drain Source SOP PSOP8S (8) (7) (6) (5) 8 Typ. PSOP8 (8) (7) (6) (5) (8) (5) (1) (4) Min. (4) Typ. (4) Typ Typ Typ. 3.5 Typ. Notes: 1) Characters in ( ) under package designation denotes JEITA No. Characters in < > under package designation denotes JEDEC No. 2) For details of dimensions, please refer to the technical specifications. 15

17 Dimensions (Unit : mm) Leaded Type Surface Mount Type CPT3 SC-63 SOT-428 (1) Gate (2) Drain Source TO-220FN 1Gate 2Drain 3Source (1) 10.0 (2) Min φ3.2 TCPT 1Gate 2Drain 3Source (2) TO-220FM 1Gate 2Drain 3Source 0.8 (1) LPTS 1Gate 2Drain 3Source φ Under Development 16

18 Internal Circuitry MOSFET + SBD +SBD(A) +SBD(B) ch+sbd(c) (5) (4) (5) (4) (6) (5) (4) 2 1 (1)Anode (2)Source Gate (4)Drain (5)Cathode (1)Gate (2)Source Anode (4)Cathode (5)Drain (1)Gate (2)Source Cathode (4)Anode (5)Anode (6)Drain Pch+SBD(A) Pch+SBD(B) Pch+SBD(C) (5) (4) (5) (4) (6) (5) (4) (1)Anode (2)Source Gate (4)Drain (5)Cathode (1)Gate (2)Source Anode (4)Cathode (5)Drain (1)Anode (2)Source Gate (4)Drain (5)N/C (6)Cathode MOSFET Dual + +Pch (6) (5) (4) (6) (5) (4) (1)TR1: Source (1)TR1: Source (2)TR1: Gate (2)TR1: Gate TR2: Drain TR2: Drain (4)TR2: Source (4)TR2: Source (5)TR2: Gate (6)TR1: Drain (5)TR2: Gate (6)TR1: Drain 1:Static protection diode. 2:Internal diode. 17

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20 -MOSFETs 1st. December Catalog No.50P5842E ROHM TSU