Power semiconductor devices. Short form catalog.

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Deirdre Harrell
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1 Power semiconductor devices Short form catalog

Power semiconductor devices Dear Friends! Introducing this technical catalog I would like to tell a little about our company, its objectives and achievements.

3 Power semiconductor devices Dear Friends! Introducing this technical catalog I would like to tell a little about our company, its objectives and achievements. Proton-Electrotex company was founded on 6th of February in year 1996 by a group of engineers who were specializing in development of electronic components. Production facilities of the company were placed on territory of Proton factory, which was in possession of Ministry of Electronics Industry in the Soviet Union times. Development and production of fast thyristors was the first step since they were in great demand within CIS region. Up to date fast thyristors produced by Proton-Electrotex are being used by many customers around the globe. The reason of that is high quality of products and constant improvement of characteristics based on usage of modern technologies. The next step in development of the company was adaptation of the whole range of bipolar semiconductor thyristors and diodes, and as a result different power assemblies on their basis. At present Proton-Electrotex holds a leading position in sphere of development and production of power semiconductor devices, heatsinks and power assemblies for different industrial applications. Production facilities of Proton-Electrotex cover over m 2. We cooperate with the major Russian research institutes. Moreover Proton-Electrotex has its own research and development center in Moscow, which is responsible for development of technologies for production of new products. Trying to completely satisfy growing demands of our customers we annually put new developments into production. I suggest You to take a closer look at our new line of high voltage thyristor and diode modules displayed on page 33 of the catalog and series of phase control thyristors with diameter of semiconductor element from 2,5 up to 4 (page 10-11). Proton-Electrotex pays great attention to the level of labor safety and environmental protection. In 2007 environmental management system was certified ISO14001 standard. Corporate culture and ethics of business conduct are the foundations of sustainable development of our company. Our strategy is to produce high quality power semiconductor devices aimed at customers on reasonable prices. Quality of the products is same for all customers regardless of their cooperation history. All customers are able to place order for devices with additional individual requirements for them up to production of exclusive devices for special projects. Every customer has the same high level of technical service and support. You will receive a qualified answer from technical support or customer service team within 24 hours after Your request. Proton-Electrotex is constantly developing representatives chain and looking to cooperate with companies concerned. Detailed information about company, terms and conditions of cooperation and products can be found on our website or get by telephone and We will be happy to have You as our long-term customer! Sales and Purchasing Director Andrey Tyukov 3

4 Contents Symbols and Terms... 5 Part I. Devices in Disc Design... 6 Overview Thyristors in Disc Housings... 7 Ultra Fast Thyristors... 8 Fast Thyristors... 8 Phase Control Thyristors Thyristor in Disc Design Overview Diodes in Disc Housings Fast Diodes Avalanche Diodes Rectifier Diodes Welding Diodes Diode in Disc Design Part II. Devices in Stud Design Overview Thyristors and Diodes in Stud Housings Phase Control Thyristors Fast Thyristors Thyristor in Stud Design Fast Diodes Avalanche Diodes Rectifier Diodes Diode in Stud Design Part III. Devices in Module Design Overview Modules Thyristor Modules Diode Modules Module Avaliable Wire Connections Heatsinks Representatives... 39

5 Symbols and Terms Power semiconductor devices Letter symbols for thyristors Letter symbols for diodes V DRM V RRM Repetitive peak off-state and reverse voltage V RRM Repetitive peak reverse voltage I TAV Mean on-state current I FAV Mean forward current I TRMS RMS on-state current I FRMS RMS forward current I TSM Surge on-state current I FSM Surge forward current T j Junction temperature T j Junction temperature T stg Storage temperature T stg Storage temperature T C Case temperature T C Case temperature M Tightening torque M Tightening torque F Mountain force F Mountain force V TM Peak on-state voltage V FM Peak forward voltage V T(TO) Threshold voltage V (TO) Threshold voltage r T On-state slope resistance r T Slope resistance I RRM I DRM Repetitive peak reverse and off-state current I RRM Repetitive peak reverse current U GT Gate trigger direct voltage P RSM Surge reverse power dissipation I GT Gate trigger direct current R thjc Thermal resistance junction to case (dv D /dt) crit Critical rate of rise of off-state voltage t rr Reverse recovery time (di T /dt) crit Critical rate of rise of on-state current t q Turn-off time R thjc Thermal resistance junction to case du/dt value code Symbol of group (dv D /dt) crit, V/µs 0 P3 E3 A3 P2 K2 E2 A2 T1 P1 M1 K1 H1 E1 C1 B Not limited t q value code for phase control thyristors t q value code for fast thyristors Symbol of group t q,µs 0 B2 C2 E2 H2 K2 M2 P2 T2 X2 A3 B Not limited *I tav < 100 A C3 E3 H3 K3 M3 P3 T3 X3 A4 B4 C4 E , ,3 5 t rr value code for fast recovery diodes Symbol of group t rr, µs 0 T3 X3 A4 B4 C4 E4 H4 K4 M4 P4 T4 X4 A5 B5 C5 E5 H Not limited 16 12, , ,2 2,5 2 1,6 1,25 1 0,8 0,63 0,5 0,4 5

PART I Devices in Disc Design Main Characteristics: Mean on-state and forward currents up

High resistance to cyclic load due to pressure construction.

Diameter of semiconductor element 24, 32, 40, 56, 70, 80, 90, 100 mm.

Selection of devices in groups for parallel, series and combined connection.

6 PART I Devices in Disc Design Main Characteristics: Mean on-state and forward currents up to 7100 А. Blocking voltage up to 6500 V. High resistance to cyclic load due to pressure construction. Height of housing 14, 20, 26, 35 mm. Diameter of semiconductor element 24, 32, 40, 56, 70, 80, 90, 100 mm. Optional opportunities: Supply of devices assembled with heat sinks. Selection of devices in groups for parallel, series and combined connection. Production of devices according to the special requirements of customers. Application: Power Semiconductor Disc Devices are applied in rectifying installation, softstarters, invertors, welding equipment, power supply equipment, wind-powered generator, induction heating equipment.

7 Power semiconductor devices Overview Phase Control Thyristors in Disc Housings 6500 T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T Т T T T T T T T T T T T T T T T T Blocking voltage [V] of the element [mm] Disc Design Thyristors Overview Fast Thyristors in Disc Housings 4000 TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFI TFIS TFIS TFIS TFI TFI TFIS TFIS TFI TFI TFIS Blocking voltage [V] of the element [mm] Part numbering guide TFI A2 A4 - N T Phase Control / TFI Fast Thyristor / TFIS Ultra Fast Thyristor 2. Design version 3. Mean on-state current, A 4. Voltage code 5. Critical rate of rise of off-state voltage 6. Group of turn-off time 7. Ambient conditions: N - normal; T - tropical 7

8 I Devices in Disc Design Thyristors You can find the Datasheets on our website Ultra Fast Thyristors Part Number of the element V DRM V RRM I TAV T C V TM I TM V T(TO) r T t q R thjc package max/ active/ height [V] [A] [ o C] [V] [A] [V] [mω] [μs] [ o C] [ o C/W] [mm] up to 1800 V TFIS , ,40 3,200 6, ,0700 T.A1 42/19/14 TFIS , ,80 0,950 5, ,0400 T.B2 42/25/14 TFIS , ,40 0,800 5, ,0320 T.C3 58/34/26 TFIS , ,40 0,800 5, ,0300 T.C1 60/38/14 TFIS , ,50 0,500 8, ,0210 T.D5 75/50/26 TFIS , ,35 0,350 10, ,0210 T.D5 75/50/26 Fast Thyristors Part Number of the element V DRM V RRM I TAV T C V TM I TM V T(TO) r T t q R thjc package max/ active/height [V] [A] [ o C] [V] [A] [V] [mω] [μs] [ o C] [ o C/W] [mm] up to 1200 V TFI , ,35 0,850 10, ,0400 T.B2 42/25/14 TFI , ,35 0,850 10, ,0400 T.B3 54/32/20 TFI , ,50 1,400 25, ,0300 T.C1 60/38/14 TFI , ,40 0,080 10, ,0085 T.F2 112/75/26 TFI , ,40 0,080 10, ,0100 T.F5 109/75/35 up to 1500 V TFI , ,35 0,850 16, ,0400 T.B2 42/25/14 TFI , ,35 0,850 16, ,0400 T.B3 54/32/20 TFI , ,50 1,250 10, ,0320 T.C3 58/34/26 TFI , ,50 1,250 10, ,0300 T.C1 60/38/14 TFI , ,50 1,250 10, ,0320 T.C2 60/38/20 TFI , ,40 0,800 12, ,0320 T.C3 58/34/26 TFI , ,40 0,800 12, ,0300 T.C1 60/38/14 TFI , ,40 0,800 12, ,0320 T.C2 60/38/20 TFI , ,20 0,650 16, ,0320 T.C3 58/34/26 TFI , ,20 0,650 16, ,0300 T.C1 60/38/14 TFI , ,20 0,650 16, ,0320 T.C2 60/38/20 TFI , ,40 0,490 10, ,0210 T.D5 75/50/26 TFI , ,30 0,340 12, ,0210 T.D5 75/50/26 TFI , ,20 0,290 16, ,0210 T.D5 75/50/26 8

9 Power semiconductor devices Part Number of the element V DRM V RRM I TAV T C V TM I TM V T(TO) r T t q R thjc package max/ active/height [V] [A] [ o C] [V] [A] [V] [mω] [μs] [ o C] [ o C/W] [mm] up to 2200 V TFI , ,50 1,400 25, ,0340 T.C3 58/34/26 TFI , ,50 1,400 25, ,0340 T.C2 60/38/20 TFI , ,40 0,800 32, ,0340 T.C3 58/34/26 TFI , ,20 0,650 32, ,0300 T.C1 60/38/14 TFI , ,40 0,800 32, ,0340 T.C2 60/38/20 TFI , ,20 0,650 32, ,0340 T.C3 58/34/26 TFI , ,20 0,650 32, ,0300 T.C1 60/38/14 TFI , ,20 0,650 32, ,0340 T.C2 60/38/20 TFI , ,40 0,490 20, ,0210 T.D5 75/50/26 TFI , ,20 0,470 20, ,0210 T.D5 75/50/26 TFI , ,25 0,300 50, ,0200 T.D5 75/50/26 TFI , ,25 0,150 32, ,0085 T.F2 112/75/26 TFI , ,25 0,150 32, ,0100 T.F5 109/75/35 up to 2800 V TFI , ,50 1,250 25, ,0500 T.B3 54/32/20 TFI , ,50 1,250 25, ,0500 T.B2 74/50/26 TFI , ,40 0,870 50, ,0500 T.B3 54/32/20 TFI , ,35 0,350 50, ,0200 T.D5 75/50/26 TFI , ,40 0,200 50, ,0100 T.F5 109/75/35 TFI , ,40 0,200 50, ,0085 T.F2 112/75/26 TFI , ,30 0,150 40, ,0100 T.F5 109/75/35 TFI , ,30 0,150 40, ,0085 T.F2 112/75/26 up to 3600 V TFI , ,00 1,200 50, ,0400 T.B3 54/32/20 TFI , ,50 0,500 40, ,0200 T.D5 75/50/26 TFI , ,30 0,700 63, ,0210 T.D5 75/50/26 up to 4400 V TFI , ,44 0, , ,0100 T.F5 109/75/35 TFI , ,44 0, , ,0085 T.F2 112/75/26 Disc Design Thyristors 9

10 I Devices in Disc Design Thyristors You can find the Datasheets on our website Phase Control Thyristors 10 Part Number of the element V max/ DRM V I TAV T C V TM I TM V T(TO) r T t q R thjc active/ RRM package height [V] [A] [ o C] [V] [A] [V] [mω] [μs] [ o C] [ o C/W] [mm] up to 800 V T , ,80 0, ,0700 T.A1 42/19/14 T , ,80 0, ,0400 T.B2 42/25/14 T , ,80 0, ,0300 T.C1 60/38/14 T , ,80 0, ,0180 T.D1 75/51/14 up to 1000 V T , ,83 0, ,0700 T.A1 42/19/14 T , ,95 0, ,0400 T.B2 42/25/14 T , ,85 0, ,0300 T.C1 60/38/14 T , ,83 0, ,0085 T.F2 112/75/26 T , ,83 0, ,0100 T.F5 109/75/35 up to 1800 V T , ,90 0, ,0700 T.A1 42/19/14 T , ,95 0, ,0400 T.B2 42/25/14 T , ,00 0, ,0300 T.C1 60/38/14 T , ,00 0, ,0320 T.C2 60/38/20 T , ,85 0, ,0350 T.C3 58/34/26 T , ,95 0, ,0180 T.D5 75/50/26 T , ,95 0, ,0180 T.D5 75/50/26 T , ,80 0, ,0180 T.D5 75/50/26 T NEW! , ,85 0, ,0100 T.E3 102/63/26 T , ,88 0, ,0085 T.F2 112/75/26 T , ,88 0, ,0100 T.F5 109/75/35 T , ,81 0, ,0085 T.F2 112/75/26 Т NEW! , ,85 0, ,0065 T.H1 121/80/26 T NEW! , ,90 0, ,0050 T.G5 150/100/26 T NEW! , ,90 0, ,0057 T.G6 150/100/35 up to 2400 V T , ,10 1, ,0400 T.B3 54/32/20 T , ,10 1, ,0400 T.B2 42/25/14 T , ,20 0, ,0320 T.C2 60/38/20 T , ,20 0, ,0180 T.D5 75/50/26 T , ,85 0, ,0180 T.D5 75/50/26 up to 2800 V T , ,15 1, ,0400 T.B3 54/32/20 T , ,15 1, ,0400 T.B2 42/25/14 T , ,04 0, ,0320 T.C2 60/38/20 T , ,15 0, ,0300 T.C1 60/38/14 T , ,10 0, ,0180 T.D5 75/50/26 T NEW! , ,85 0, ,0100 T.E3 102/63/26 T , ,90 0, ,0085 T.F2 112/75/26 T , ,90 0, ,0100 T.F5 109/75/35 T NEW! , ,90 0, ,0065 T.H1 121/80/26 T NEW! , ,85 0, ,0050 T.G5 150/100/26 T NEW! , ,85 0, ,0057 T.G6 150/100/35

11 Power semiconductor devices Part Number of the element V max/ DRM V I TAV T C V TM I TM V T(TO) r T t q R thjc active/ RRM package height [V] [A] [ o C] [V] [A] [V] [mω] [μs] [ o C] [ o C/W] [mm] up to 3600 V T , ,95 3, ,0800 T.A1 42/19/14 T , ,20 2, ,0400 T.B3 54/32/20 T , ,15 0, ,0320 T.C2 60/38/20 T , ,30 0, ,0180 T.D5 75/50/26 T , ,45 0, ,0180 T.D5 75/50/26 T , ,15 0, ,0085 T.F2 112/75/26 T , ,15 0, ,0100 T.F5 109/75/35 T NEW! , ,90 0, ,0050 T.G5 150/100/26 T NEW! , ,90 0, ,0057 T.G6 150/100/35 up to 4400 V T , ,20 3, ,0400 T.B3 54/32/20 T , ,30 2, ,0400 T.B3 54/32/20 T , ,30 1, ,0320 T.C2 60/38/20 T , ,30 1, ,0350 T.C3 58/34/26 T , ,20 0, ,0180 T.D5 75/50/26 T NEW! , ,05 0, ,0100 T.E3 102/63/26 T , ,20 0, ,0085 T.F2 112/75/26 T , ,20 0, ,0100 T.F5 109/75/35 T NEW! , ,00 0, ,0065 T.H1 121/80/26 T NEW! , ,95 0, ,0050 T.G5 150/100/26 T NEW! , ,95 0, ,0057 T.G6 150/100/35 up to 5200 V T NEW! , ,90 0, ,0100 T.E3 102/63/26 T NEW! , ,00 0, ,0065 T.H1 121/80/26 T NEW! , ,00 0, ,0050 T.G5 150/100/26 T NEW! , ,00 0, ,0057 T.G6 150/100/35 up to 6500 V T , ,10 2, ,0350 T.C3 58/34/26 T , ,10 2, ,0450 T.C5 58/34/35 T , ,00 2, ,0350 T.C3 58/34/26 T , ,00 2, ,0450 T.C5 58/34/35 T , ,10 1, ,0180 T.D5 75/50/26 T , ,05 1, ,0200 T.D4 75/50/35 T , ,05 1, ,0180 T.D5 75/50/26 T , ,05 1, ,0200 T.D4 75/50/35 T NEW! , ,00 0, ,0100 T.E3 102/63/26 T NEW! , ,00 0, ,0110 T.E4 102/63/35 T , ,00 0, ,0100 T.F5 109/75/35 T , ,00 0, ,0085 T.F2 112/75/26 T NEW! , ,00 0, ,0065 T.H1 121/80/26 T NEW! , ,00 0, ,0075 T.H2 121/80/35 T NEW! , ,10 0, ,0050 T.G5 150/100/26 T NEW! , ,10 0, ,0057 T.G6 150/100/35 Disc Design Thyristors 11

12 I Devices in Disc Design Thyristors You can find the Datasheets on our website T.A1 T.B kn 70 g kn 110 g 7.94 (0.313) surface between the anode and cathode flanges 10.3 (0.405) 5.00 (0.197) cathode flanges 6.3 (0.248) surface between the anode and cathode flanges cathode flanges T.B kn 180 g (0.765) (0.476) surface between the anode and cathode flanges cathode flanges

13 Power semiconductor devices T.C1 T.C kn 210 g kn 260 g Disc Design Thyristors 7.86 (0.309) surface between the anode and cathode flanges (0.765) 6.10 (0.240) cathode flanges (0.476) surface between the anode and cathode flanges cathode flanges T.C3 T.C kn 280 g kn 400 g 27.6 (1.087) surface between the anode and cathode flanges 38.0 (1.496) 16.0 (0.630) cathode flanges 21.0 (0.827) surface between the anode and cathode flanges cathode flanges 13

14 I Devices in Disc Design Thyristors You can find the Datasheets on our website T.D1 T.D kn 330 g kn 550 g 7.51 (0.295) surface between the anode and cathode flanges (1.160) surface between the anode and cathode flanges 5.60 (0.220) cathode flanges (0.689) cathode flanges T.D4 T.D kn 700 g kn 510 g (1.557) surface between the anode and cathode flanges (1.196) surface between the anode and cathode flanges (1.004) cathode flanges (0.710) cathode flanges 14

15 Power semiconductor devices T.D6 T.E kn 460 g kn 1000 g Disc Design Thyristors (0.539) surface between the anode and cathode flanges (1.437) (0.440) cathode flanges (0.650) surface between the anode and cathode flanges cathode flanges T.E kn 1200 g (1.724) (1.004) surface between the anode and cathode flanges cathode flanges 15

16 I Devices in Disc Design Thyristors You can find the Datasheets on our website T.F1 T.F kn 1500 g kn 1500 g (1.077) surface between the anode and cathode flanges 36.6 (1.441) (0.629) cathode flanges 16.2 (0.638) surface between the anode and cathode flanges cathode flanges T.F5 T.G kn 1700 g kn 2700 g (1.855) surface between the anode and cathode flanges (2.447) (1.000) cathode flanges (1.024) surface between the anode and cathode flanges cathode flanges

17 Power semiconductor devices T.G5 T.G kn 2200 g kn 2700 g Disc Design Thyristors (1.756) surface between the anode and cathode flanges (2.444) (0.618) cathode flanges (0.921) surface between the anode and cathode flanges cathode flanges T.H1 T.H kn 1900 g kn 2200 g (1.437) surface between the anode and cathode flanges (1.787) (0.650) cathode flanges (1.004) surface between the anode and cathode flanges cathode flanges 17

18 I Devices in Disc Design Diodes You can find the Datasheets on our website Overview Rectifier Diodes in Disc Housings 6500 D D D D D D D D D D D D D D D D D D D D D D D D D D D Blocking voltage [V] of the element [mm] Overview Fast Diodes in Disc Housings 4400 DF DF DF DF DF DF DF DF DF DF DF DF DF DF DF DF DF DF DF Blocking voltage [V] of the element [mm] Overview Avalanche Diodes in Disc Housings 6000 DA DA DA DA DA DA DA DA DA DA DA DA Blocking voltage [V] of the element [mm] Overview Welding Diodes in Disc Housings 400 D Blocking voltage [V] 51 of the element [mm] 18 Part numbering guide D N D Rectifier diode / DF Fast diode / DA Avalanche diode / D Welding diode 2. Design version 3. Average forward current, A 4. Voltage code 5. Ambient conditions: N - normal; T - tropical

19 Power semiconductor devices Fast Diodes Part Number of the element V RRM I FAV T C V FM I FM V F (TO) r T t rr R thjc package max/ active/height [V] [A] [ o C] [V] [A] [V] [mω] [μs] [ o C] [ o C/W] [mm] up to 1800 V DF , ,20 0,850 3, ,0700 D.A1 42/19/14 DF , ,25 1,100 2, ,0700 D.A1 42/19/14 DF , ,25 0,350 2, ,0400 D.B1 42/25/14 DF , ,25 0,400 2, ,0320 D.C2 60/38/20 DF , ,20 0,300 3, ,0320 D.C2 60/38/20 DF , ,15 0,250 5, ,0320 D.C2 60/38/20 DF , ,25 0,300 2, ,0180 D.D3 74/50/26 DF , ,15 0,200 2, ,0180 D.D3 74/50/26 DF , ,20 0,130 6, ,0085 D.F1 112/75/26 up to 2800 V DF , ,35 1,700 1, ,0400 D.B2 54/32/20 DF , ,20 0,700 5, ,0400 D.B2 54/32/20 DF , ,30 0,350 4, ,0320 D.C2 60/38/20 DF , ,35 0,350 3, ,0180 D.D3 74/50/26 DF , ,35 0,250 4, ,0180 D.D3 74/50/26 DF , ,30 0,170 8, ,0085 D.F1 112/75/26 DF , ,30 0,150 8, ,0085 D.F1 112/75/26 up to 3600 V DF , ,40 0,200 16, ,0085 D.F1 112/75/26 up to 4400 V DF , ,50 2,000 4, ,0350 D.C3 58/34/26 DF , ,40 0,700 5, ,0180 D.D3 74/50/26 Disc Design Diodes Avalanche Diodes Part Number of the element V RRM I FAV T C V FM I FM V F (TO) r T R thjc package max/ active/height [V] [A] [ o C] [V] [A] [V] [mω] [ o C] [ o C/W] [mm] up to 1800 V DA , ,95 1, ,0700 D.A1 42/19/14 DA , ,95 0, ,0400 D.B2 54/32/20 DA , ,95 0, ,0180 D.D3 74/50/26 DA , ,60 0, ,0085 D.F1 112/75/26 up to 2800 V DA , ,00 0, ,0320 D.C2 60/38/20 DA , ,00 0, ,0180 D.D3 74/50/26 DA , ,00 0, ,0180 D.D3 74/50/26 DA , ,00 0, ,0085 D.F1 112/75/26 DA , ,00 0, ,0085 D.F1 112/75/26 up to 3600 V DA , ,95 0, ,0180 D.D3 74/50/26 DA , ,05 0, ,0085 D.F1 112/75/26 up to 6000 V DA , ,90 0, ,0180 D.D3 74/50/26 19

20 I Devices in Disc Design Diodes You can find the Datasheets on our website Rectifier Diodes Part Number of the element V RRM I FAV T C V FM I FM V F (TO) r T R thjc package max/ active/ height [V] [A] [ o C] [V] [A] [V] [mω] [ o C] [ o C/W] [mm] up to 1800 V D , ,90 0, ,0700 D.A1 42/19/14 D , ,95 0, ,0400 D.B1 42/25/14 D , ,95 0, ,0400 D.B2 54/32/20 D , ,95 0, ,0320 D.C2 60/38/20 D , ,95 0, ,0350 D.C3 58/34/26 D , ,95 0, ,0180 D.D3 74/50/26 D , ,70 0, ,0085 D.F1 112/75/26 up to 2800 V D , ,00 1, ,0700 D.A1 42/19/14 D , ,10 0, ,0400 D.B2 54/32/20 D , ,10 0, ,0450 D.B3 42/25/26 D , ,00 0, ,0450 D.B3 42/25/26 D , ,95 0, ,0320 D.C2 60/38/20 D , ,95 0, ,0350 D.C3 58/34/26 D , ,00 0, ,0180 D.D3 74/50/26 D , ,85 0, ,0085 D.F1 112/75/26 D , ,75 0, ,0085 D.F1 112/75/26 up to 3600 V D , ,85 0, ,0180 D.D3 74/50/26 D , ,25 0, ,0085 D.F1 112/75/26 up to 4400 V D , ,05 0, ,0400 D.B2 54/32/20 D , ,05 0, ,0450 D.B3 42/25/26 D , ,00 0, ,0320 D.C2 60/38/20 D , ,00 0, ,0350 D.C3 58/34/26 D , ,80 0, ,0085 D.F1 112/75/26 up to 6500 V D , ,10 2, ,0700 D.A1 42/19/14 D , ,31 0, ,0180 D.D3 74/50/26 D , ,95 0, ,0180 D.D3 74/50/26 D , ,85 0, ,0085 D.F1 112/75/26 Welding Diodes Part Number of the element V RRM I FAV T C V FM I FM V F (TO) r T R thjc package max/ active/ height [V] [A] [ o C] [V] [A] [V] [mω] [oc] [oc/w] [mm] D ,5 1, ,70 0, ,0100 D.H1 59,5/44,4/8,5 20

21 Power semiconductor devices D.A1 D.B kn 65 g kn 110 g Disc Design Diodes (0.462) surface between the anode and cathode flanges 11.1 (0.437) (0.457) cathode flanges 11.6 (0.457) surface between the anode and cathode flanges cathode flanges D.B2 D.B kn 180 g kn 210 g (0.933) surface between the anode and cathode flanges (1.211) (0.752) cathode flanges (0.960) surface between the anode and cathode flanges cathode flanges 21

22 I Devices in Disc Design Diodes You can find the Datasheets on our website D.C2 D.C kn 260 g kn 280 g (0.933) surface between the anode and cathode flanges 33.3 (1.311) (0.752) cathode flanges 22.5 (0.886) surface between the anode and cathode flanges cathode flanges D.D2 D.D kn 550 g kn 510 g (1.327) surface between the anode and cathode flanges (1.529) (0.964) cathode flanges (0.886) surface between the anode and cathode flanges cathode flanges

23 Power semiconductor devices D.F1 D.F kn 1500 g kn 1700 g Disc Design Diodes 41.4 (1.630) surface between the anode and cathode flanges 52.5 (2.067) 23.1 (0.909) cathode flanges 32.5 (1.279) surface between the anode and cathode flanges cathode flanges D.H kn 140 g 7.3 (0.287) 4.0 (0.157) surface between the anode and cathode flanges cathode flanges 23

PART II Devices in Stud Design Main Characteristics: Mean on-state and forward currents up to 500 А. Blocking voltage up to 1800 V. Pressure contact construction. Simple mounting.

24 PART II Devices in Stud Design Main Characteristics: Mean on-state and forward currents up to 500 А. Blocking voltage up to 1800 V. Pressure contact construction. Simple mounting. High resistance to cyclic load. Diodes can be supplied with direct and reverse polarity. Metric and inch thread. Optional opportunities: Selection of devices in groups for parallel, series and combined connection. Delivery of devices assembled with heat sinks. Application: Devices in stud design are applied in railway transport: rectifier bridges, AC control, electric motor drive for industry and transport.

25 Power semiconductor devices Overview Phase Control Thyristors in Stud Housings Blocking voltage [V] 1600 T of the element [mm] Т T T Т Т T Т Т T Т T Т T Т T Overview Fast Thyristors in Stud Housings Blocking voltage [V] Blocking voltage [V] 1400 TFI TFI of the element [mm] Overview Rectifier Diodes in Stud Housings of the element [mm] D D D D TFI TFI TFI TFI TFI TFI TFI TFI D D D D D D Stud Design Overview Fast Diodes in Stud Housings Blocking voltage [V] 1600 DF DF DF of the element [mm] Overview Avalanche Diodes in Stud Housings Blocking voltage [V] 1800 DA DA of the element [mm] Part numbering guide TFI A2 T3 - N DF M4 - N T Phase control thyristor / TFI Fast thyristor 2. Design version 3. Mean on-state current, A 4. Voltage code 5. Critical rate of rise of off-state voltage 6. Group of turn-off time 7. Ambient conditions: N - normal; T - tropical 1.D Rectifier diode / DF Fast diode / DA Avalanche diode 2. Design version 3. Average forward current, A 4. Polarity: X - Cathode to Stud; Anode to Stud - no symbol 5. Voltage code 25

26 II Devices in Stud Design Thyristors You can find the Datasheets on our website Phase Control Thyristors Part Number of the element V DRM V RRM I TAV T C V TM I TM V T(TO) r T t q R thjc package max/ active/ height [V] [A] [ o C] [V] [A] [V] [mω] [μs] [ o C] [ o C/W] [mm] up to 800 V T , ,95 0, ,0700 T.SB3 54* T , ,95 0, ,0800 T.SB1 M24x1,5/19/SW41 T , ,95 0, ,0800 T.SB2 М24х1,5/19/SW45 T , ,80 0, ,0700 T.SB3 54* T , ,80 0, ,0800 T.SB1 M24x1,5/19/SW41 T , ,80 0, ,0800 T.SB2 M24x1,5/19/SW45 up to 1800 V T , ,15 1, ,1000 T.SA1 M20x1,5/15/SW32 T , ,05 1, ,1000 T.SA1 M20x1,5/15/SW32 T , ,90 0, ,1000 T.SA1 M20x1,5/15/SW32 T , ,00 1, ,0800 T.SB1 M24x1,5/19/SW41 T , ,00 1, ,0700 T.SB3 54* T , ,00 1, ,0800 T.SB2 M24x1,5/19/SW45 T , ,00 0, ,0800 T.SB1 M24x1,5/19/SW41 T , ,00 0, ,0800 T.SB2 M24x1,5/19/SW45 T , ,95 0, ,0800 T.SB1 M24x1,5/19/SW41 T , ,00 0, ,0700 T.SB3 54* T , ,95 0, ,0700 T.SB3 54* T , ,95 0, ,0800 T.SB2 M24x1,5/19/SW45 * diameter of contact surface Fast Thyristors Part Number of the element V DRM V RRM I TAV T C V TM I TM V T(TO) r T t q R thjc package max/ active/ height [V] [A] [ o C] [V] [A] [V] [mω] [μs] [ o C] [ o C/W] [mm] up to 1800 V TFI , ,45 2,500 16, ,1000 T.SA1 M20x1,5/15/SW32 TFI , ,20 1,800 20, ,1000 T.SA1 M20x1,5/15/SW32 TFI , ,65 1,700 16, ,0800 T.SB1 M24x1,5/19/SW41 TFI , ,31 1,100 20, ,0700 T.SB3 54* TFI , ,31 1,100 20, ,0800 T.SB1 M24x1,5/19/SW41 TFI , ,31 1,100 20, ,0800 T.SB2 M24x1,5/19/SW45 TFI , ,05 0,850 25, ,0700 T.SB3 54* TFI , ,05 0,850 25, ,0800 T.SB1 M24x1,5/19/SW41 TFI , ,05 0,850 25, ,0800 T.SB2 M24x1,5/19/SW45 TFI , ,00 0,650 32, ,0800 T.SB1 M24x1,5/19/SW41 * diameter of contact surface 26

27 Power semiconductor devices T.SA1 T.SB1 Tightening torque Nm 250 g Tightening torque Nm 440 g 12.4 (0.488) 12.4 (0.488) Surface creepage distance Air strike distance 12.4 (0.488) 12.4 (0.488) Surface creepage distance Air strike distance Stud Design Thyristors Pakage Type of screw W H Pakage Type of screw W H T.SA1 Metric Screw Type T.SA1 M20x1,5 8g 15 T.SB1 Metric Screw Type T.SB1 M24x1,5 8g 19 Other threads are available on reguest Other threads are available on reguest Polarity Example of code designation Reference designation Anode Colors Cathode Gate Polarity Example of code designation Reference designation Anode Colors Cathode Gate Anode to stud T Red tube White Anode to stud T Red tube White T.SB2 T.SB3 Tightening torque Nm 440 g Tightening torque kn 500 g 12.4 (0.488) 12.4 (0.488) Surface creepage distance Air strike distance 12.4 (0.488) 12.4 (0.488) Surface creepage distance Air strike distance Pakage Type of screw T.SB2 Metric Screw Type T.SB2 Other threads are available on reguest W M24x1,5 8g H 19 Polarity Example of code designation Reference designation Anode Colors Cathode Gate Polarity Example of code designation Reference designation Anode Colors Cathode Gate Anode to stud T Red tube White Anode to stud T Red tube White 27

28 II Devices in Stud Design Diodes You can find the Datasheets on our website Fast Diodes Part Number of the element V RRM I FAV T C V FM I FM V F (TO) r T t rr R thjc package max/ active/ height [V] [A] [ o C] [V] [A] [V] [mω] [μs] [ o C] [ o C/W] [mm] up to 1800 V DF , ,25 1,100 2, ,1000 D.SA1 M20x1,5/15/SW32 DF , ,20 0,850 3, ,1000 D.SA1 M20x1,5/15/SW32 DF , ,20 0,800 3, ,0800 D.SB1 M24x1,5/19/SW41 Avalanche Diodes Part Number of the element V RRM I FAV T C V FM I FM V F (TO) r T R thjc package max/ active/ height [V] [A] [ o C] [V] [A] [V] [mω] [ o C] [ o C/W] [mm] up to 1800 V DA , ,80 1, ,1000 D.SA1 M20x1,5/15/SW32 DA , ,80 0, ,0800 D.SB1 M24x1,5/19/SW41 Rectifier Diodes Part Number of the pellet V RRM I FAV T C V FM I FM V F (TO) r T R thjc package max/ active/ height [V] [A] [ o C] [V] [A] [V] [mω] [ o C] [ o C/W] [mm] up to 1800 V D , ,90 0, ,1000 D.SA1 M20x1,5/15/SW32 D , ,90 0, ,1000 D.SA1 M20x1,5/15/SW32 D , ,90 0, ,1000 D.SA1 M20x1,5/15/SW32 D , ,90 0, ,1000 D.SA1 M20x1,5/15/SW32 D , ,90 0, ,0800 D.SB1 M24x1,5/19/SW41 D , ,90 0, ,0700 D.SB3 54* D , ,90 0, ,0800 D.SB2 M24x1,5/19/SW45 D , ,80 0, ,0800 D.SB1 M24x1,5/19/SW41 D , ,80 0, ,0700 D.SB3 54* D , ,80 0, ,0800 D.SB2 M24x1,5/19/SW45 * diameter of contact surface 28

29 Power semiconductor devices D.SA1 D.SB1 Tightening torque Nm 250 g Tightening torque Nm 440 g 12.4 (0.488) 12.4 (0.488) Surface creepage distance Air strike distance 12.4 (0.488) 12.4 (0.488) Surface creepage distance Air strike distance Stud Design Diodes Type of screw D.SA1 Metric Screw Type D.SA1 Other threads are available on reguest W M20x1,5 8g H Type of screw W H 15 D.SB1 Metric Screw Type D.SB1 M24x1,5 8g 19 Other threads are available on reguest Normal Reverse Polarity Anode to stud Cathode to stud Example of code designation D D X-18 Reference designation Anode - Black tube Colors Cathode Red tube - Normal Reverse Polarity Anode to stud Cathode to stud Example of code designation D D X-18 Reference designation Anode - Black tube Colors Cathode Red tube - D.SB2 D.SB3 Tightening torque Nm 470 g Tightening torque kn 500 g 12.4 (0.488) 12.4 (0.488) Surface creepage distance Air strike distance 12.4 (0.488) 12.4 (0.488) Surface creepage distance Air strike distance Type of screw W H D.SB2 Metric Screw Type D.SB2 M24x1,5 8g 19 Other threads are available on reguest Normal Reverse Polarity Anode to stud Cathode to stud Example of code designation D D X-18 Reference designation Anode - Black tube Colors Cathode Red tube - Normal Reverse Polarity Anode to stud Cathode to stud Example of code designation D D X-18 Reference designation Anode - Black tube Colors Cathode Red tube - 29

PART III Devices in Module Design Main Characteristics: Mean on-state and forward currents up to 1250 А. Blocking voltage up to 6500 V.

Single-sided cooling through copper base plate. Simple of mounting. High resistance to cyclic load due to pressure contact construction.

Modules of A2, F, D, E1 types are certified by UL standard (Underwriters Laboratories). Optional opportunities: Diode/thyristor combination in one housing.

30 PART III Devices in Module Design Main Characteristics: Mean on-state and forward currents up to 1250 А. Blocking voltage up to 6500 V. Dimension of module copper baseplates 34*94 (housing F), 53*92 (housing С), 70*104 (housing Е1), 60*124 (housing А2), 77*150 (housing D). Single-sided cooling through copper base plate. Simple of mounting. High resistance to cyclic load due to pressure contact construction. Electrical isolated baseplate. Isolation voltage 3,0 kv АС per 1 minute or 3,6 kv DС per 1 second. Single and double components module. Modules of A2, F, D, E1 types are certified by UL standard (Underwriters Laboratories). Optional opportunities: Diode/thyristor combination in one housing. Module with fast thyristor and diode elements are avaliable. Production of modules with high isolation. Stacks with heat sink. Application: Devices in module design are applied in railway transport: rectifier bridges, AC control, electric motor drive for industry and transport.

31 Power semiconductor devices Overview Thyristor Modules for Phase Control Blocking voltage[v] 6500 MTx A MTx A2 MTx D 3600 MTx F МТх-320-З6-А2 MT E MTx D 2800 MTx F MT E MTx D 2400 MTx C MTx A MTx F MT E MTx D 1800 MTx F MTx C MTx A2 MT A2 MT E MTx D 1200 MTx C MTx A2 MTx D 800 MTx D baseplate width [mm] Overview Diode Modules for Rectifier 6500 MDx A MDx A MDx A2 MD E MDx D 3600 MDx F MDx A MDx C 2800 MDx F MD E MDx D 2600 MDx C MDx A MDx F MD E 1800 MDx F MDx C MDx A2 Blocking voltage[v] baseplate width [mm] Module Design Part numbering guide MT A - N Types of module: MT: Thyristor module; MT/D: Thyristor-Diode module; МD/T: Diode-Thyristor module 2. Circuit Schematic (x): 3-serial connection; 4 - common Cathode; 5-common Anode 3. Average On-state Current, A 4. Voltage Code Ambient Conditions: N - Normal MD A - N MD- Diode module 2. Circuit Schematic (x): 3 - serial connection; 4 - common Cathode; 5 - common Anode 3. Average Forward Current, A 4. Voltage Code Ambient Conditions: N - Normal 31

32 III Devices in Module Design You can find the Datasheets on our website Thyristor Modules (МТ, MT/D, MD/T) Part Number V DRM V RRM I TAV T C V TM I TM V T(TO) r T t q R thjc package Baseplate width/length [V] [A] [ o C] [V] [A] [V] [mω] [μs] [ o C] [ o C/W] [mm] up to 800 V MTx D MT/Dx D MD/Tx D , ,80 0, ,0500 M.D 77/150 up to 1200 V MTx C MT/Dx C MD/Tx C MTx A , ,80 0, ,1300 M.C 53/92 MT/Dx A2 MD/Tx A2 MTx D , ,85 0, ,0650 M.A2 60/124 MT/Dx D MD/Tx D , ,90 0, ,0500 M.D 77/150 up to 1800 V MTx F MT/Dx F MD/Tx F MTx C , ,80 0, ,1800 M.F1 34/94 MT/Dx C MD/Tx C MTx A , ,95 0, ,1300 M.C 53/92 MT/Dx A2 MD/Tx A2 MTx A , ,85 0, ,0650 M.A2 60/124 MT/Dx A2 MD/Tx A2 MT A , ,77 0, ,0620 M.A2 60/124 MT/D A2 MD/T A2 MTx D , ,84 0, ,0650 M.A2 60/124 MT/Dx D MD/Tx D MT E ,45 1, ,85 0,80 0,230 0, ,0500 0,0420 M.D M.E1 77/150 70/104 up to 2400 V MTx F MT/Dx F MD/Tx F MTx C , ,80 1, ,1800 M.F1 34/94 MT/Dx C MD/Tx C MTx A , ,00 0, ,1300 M.C 53/92 MT/Dx A2 MD/Tx A2 MTx D , ,00 0, ,0650 M.A2 60/124 MT/Dx D MD/Tx D MT E ,55 1, ,90 0,85 0,210 0, ,0500 0,0420 M.D M.E1 77/150 70/104 up to 2800 V MTx F MT/Dx F MD/Tx F MTx D , ,85 2, ,1900 M.F1 34/94 MT/Dx D MD/Tx D MT E ,40 1, ,95 0,95 0,300 0, ,0500 0,0420 M.D M.E1 77/150 70/ Х Circuit Schematic: 3 serial connection; 4 common Cathode; 5 common Anode.

33 Power semiconductor devices Part Number V DRM V RRM I TAV T C V TM I TM V T(TO) r T t q R thjc package Baseplate width/length [mm] [V] [A] [ o C] [V] [A] [V] [mω] [μs] [ o C] [ o C/W] up to 3600 V MTx F MT/Dx F MD/Tx F МТх-320-З6-А , ,95 3, ,1900 M.F1 34/94 МТ/Dх-320-З6-А2 МD/Тх-320-З6-А2 MTx D , ,15 0, ,0680 M.A2 60/124 MT/Dx D MD/Tx D MT E ,85 2, ,10 1,05 0,400 0, ,0500 0,0420 M.D M.E1 77/150 70/104 up to 4400 V MTx A2 NEW! MT/Dx A2 NEW! , ,40 1, ,0680 M.A2 60/124 MD/Tx A2 NEW! MTx D NEW! MT/Dx D NEW! , ,20 0, ,0500 M.D 77/150 MD/Tx D NEW! up to 6500 V MTx A2 NEW! MT/Dx A2 NEW! , ,10 2, ,0680 M.A2 60/124 MD/Tx A2 NEW! Diode Modules (MD) Part Number V RRM I FAV T C V FM I FM V F (TO) r T R thjc package Baseplate width/length [mm] [V] [A] [ o C] [V] [A] [V] [mω] [ o C] [ o C/W] up to 1800 V MDx F , ,75 0, ,1800 M.F1 34/94 MDx C , ,75 0, ,1300 M.C 53/92 MDx A , ,78 0, ,0650 M.A2 60/124 up to 2800 V MDx F , ,80 0, ,1800 M.F1 34/94 MDx F , ,85 1, ,1900 M.F1 34/94 MDx C , ,85 0, ,1300 M.C 53/92 MDx A , ,80 0, ,0650 M.A2 60/124 MDx D , ,80 0, ,0500 M.D 77/150 MD E , ,80 0, ,0420 M.E1 70/104 MD E , ,80 0, ,0420 M.E1 70/104 up to 3600 V MDx F , ,93 2, ,1900 M.F1 34/94 MDx C , ,86 1, ,1300 M.C 53/92 MDx A , ,80 0, ,0680 M.A2 60/124 up to 4400 V MDx A2 NEW! , ,85 0, ,0680 M.A2 60/124 MDx D NEW! , ,90 0, ,0500 M.D 77/150 MD E NEW! , ,85 0, ,0420 M.E1 70/104 up to 6500 V MDx A2 NEW! , ,80 0, ,0680 M.A2 60/124 MDx A2 NEW! , ,95 1, ,0680 M.A2 60/124 Module Design 33

34 III Devices in Module Design You can find the Datasheets on our website M.A2 M.C 1500 g 800 g MT3 MT4 MT5 MD3 MD4 MD5 MT3 MT4 MT5 MD3 MD4 MD5 MT/D3 MD/T3 MT/D4 MD/T4 MT/D5 MD/T5 MT/D3 MD/T3 MT/D4 MD/T4 MT/D5 MD/T5 Mounting Torque (M6) 6.00 Nm (Tolerance ±15%) Terminal Connection Torque (M10) Nm (Tolerance ±15%) Mounting Torque (M6) 5.00 Nm (Tolerance ±15%) Terminal Connection Torque (M8) Nm (Tolerance ±15%) * The screws must be lubricated * The screws must be lubricated M.D M.E g 2550 g MT3 MT4 MT5 MD3 MD4 MD5 MT1 MD1 MT/D3 MD/T3 MT/D4 MD/T4 MT/D5 Mounting Torque (M8) 6.00 Nm (Tolerance ±15%) Terminal Connection Torque (M12) Nm (Tolerance ±15%) MD/T5 Mounting Torque (M6) 6.00 Nm (Tolerance ±15%) Terminal Connection Torque (M12) Nm (Tolerance ±15%) 34 * The screws must be lubricated * The screws must be lubricated

35 Power semiconductor devices M.F1 Avaliable wire connections 320 g MD3 MT3 MD4 MT4 MD5 Wired connection of disc devices Wired connection of disc devices MT/D3 MD/T3 MT/D5 Mounting Torque (M6) 6.00 Nm (Tolerance ±15%) Terminal Connection Torque (M6) 6.00 Nm (Tolerance ±15%) * The screws must be lubricated Wired connection to the module connection wire-assembly 18 (left) A1, A2: MT/T 3, 4, 5; MT/D 3, 4, 5 F1: MT/T 3, 4; MT/D 3, 5 Wired connection to the module connection wire-assembly (right) A1, A2: MT/T 3, 4, 5; MD/T 3, 4, 5 F1: MT/T 3, 4; MD/T 3 E1: MT1 Module Design Wired connection to the module connection wire-assembly 003 (left) C: MT/T 3, 4, 5; MD/T 3, 4, 5 D: MT/T 3, 4, 5; MT/D 3, 4, 5 Wired connection to the module connection wire-assembly (right) C: MT/T 3, 4, 5; MT/D 3, 4, 5 D: MT/T 3, 4, 5; MD/T 3, 4, 5 35

Heatsinks Heatsinks Type Weight (without current lead) Screw hole diameter (Diameter of the contact surface) Overall dimensions without current lead

[ C/W (W)] [ C/W] [Pа] О161 0,681 (0,64) М16х1,5 70х80х100 1,120 (80) 0,355 18 О171 0,669 (0,63) М20х1,5 70х80х100 1,120 (80) 0,355 18 О271 1,539 (1,5)

18 О281 1,542 (1,49) М24х1,5 110х110х100 0,710 (130) 0,236 25 О123 1,58 (1,45) (22) 126х100х122 0,710 (120) 0,212 20 О143 3,18 (2,85) (42) 135х150х125

(55) 170х150х176 0,280 (220) 0,075 30 О253 5,27 (4,47) (55) 170х150х156 0,355 (220) 0,100 30 О173 12,18 (10,57) (82) 200х250х210 0,180 (400) 0,050 40

36 Heatsinks Heatsinks Type Weight (without current lead) Screw hole diameter (Diameter of the contact surface) Overall dimensions without current lead (width/length/height) Heat resistance (Dissipation capacity) natural cooling Heat resistance Air speed is 6 m/sec Pressure Differential [kg] [mm] [mm] [ C/W (W)] [ C/W] [Pа] О161 0,681 (0,64) М16х1,5 70х80х100 1,120 (80) 0, О171 0,669 (0,63) М20х1,5 70х80х100 1,120 (80) 0, О271 1,539 (1,5) М20х1,5 110х110х100 0,710 (130) 0, О371 0,404 (0,365) М20х1,5 45х80х80 1,900 (50) 0, О181 0,672 (0,62) М24х1,5 70х80х100 1,120 (80) 0, О281 1,542 (1,49) М24х1,5 110х110х100 0,710 (130) 0, О123 1,58 (1,45) (22) 126х100х122 0,710 (120) 0, О143 3,18 (2,85) (42) 135х150х125 0,500 (120) 0, О243 5,56 (4,76) (42) 170х150х170 0,280 (220) 0, О343 5,26 (4,46) (42) 170х150х150 0,355 (220) 0, О153 5,57 (4,77) (55) 170х150х176 0,280 (220) 0, О253 5,27 (4,47) (55) 170х150х156 0,355 (220) 0, О173 12,18 (10,57) (82) 200х250х210 0,180 (400) 0, О193 22,9(22,0) х300х213 0,101 (400) 0,03 29 Part Numbering guide О N О Heatsink 2. Design version 3. Length, mm 4. Ambient conditions

37 Power semiconductor devices O123 O143 O153 O161 O171 O173 Heatsinks O181 O193 37

38 Heatsinks O243 O253 O271 O281 O343 O371

39 Representatives Power semiconductor devices Country Company Address Telephone/ Fax /web Germany GvA Leistungselektronik GmbH Boehringer Str , Mannheim, Germany Estonia Elsorel OÜ Telliskivi 60, Tallinn China Hebei Proton-Electrotex Electronic Co., Ltd JiaDao Road provincial level development zones Jing county, Hebei, China / / proton99@vip.sina.com gaozhancheng@vip.sina.com Korea SEMiPiA Co., Ltd. E-517, Gwangmyeong Technopark 1345, Soha-Dong, Gwangmyeong-Si, Gyeonggi-Do, , Republic of Korea +82 (0) (0) semipia@semipia.com Japan Eich Corporation Co., LT 5F KDX Nishi Shinjuku Bldg, Nishisninjuku Shinjuku-ku, Tokyo , Japan Belarus Silovaya Elektronika Office 1, 77 Linkova str., , Minsk, Belarus sil.electro@gmail.com, epsb@bk.ru Belarus Promelectrotex Ltd Office 5, 2 Sverdlova St., Minsk, , Belarus promeltex@gmail.com Ukraine Ukraina-Tsenter 2 B Geroev Kosmosa str., Kiev, 03148, Ukraine ukrcentr@gala.net Ukraine Kraft-Elektro Office 219, 42 Tobolskaya str., Kharkov, Ukraine kraftelectro@ukr.net Russia Tekhnomir Room 5n, lit.a, 33 Gorokhovaya str., St.Petersburg, Russia tehnomirspb@mail.ru Russia Ametist 11 Universitetsky lane, , Ekaterinburg, Russia info@ametex.ru Russia Energosistemavtomatika Office 400, 42 Lyublinskaya str.,109387, Moscow, Russia aoesa@mail.ru 39

40 Proton-Electrotex, JSC 19, Leskova Str., Orel, , Russia Tel./Fax: Tel.: Power semiconductor devices october 2013

Management of KUBARA LAMINA S.A.

Management of KUBARA LAMINA S.A. The tradition of KUBARA LAMINA SA dates back to 957 in which Zakłady Lamp Nadawczych LAMINA was established. After numerous ownership transformations, the company is now a joint stock company called KUBARA