news ABB inaugurates expanded Bipolar facility Highlights ABB Semiconductors Newsletter Page 2

Transcription

1 news 1 11 ABB Semiconductors Newsletter Highlights Page 2 - Marketing letter - Technology Trends BiMOS: BIGT - Magazine Articles Pages 3 and 4 - BiMOS and Bipolar new qualified products and products in development with their main features and applications - Portrait: PowerParts AG Page 5 - BiMOS and Bipolar obsolete products and replacements - Phased out products and last deliveries ABB inaugurates expanded Bipolar facility In order to meet the global power markets increasing demands, ABB made a commitment to increase the overall production capacity of high power semiconductors. The most important feature of the new bipolar production line is the 150 mm wafer production line. Since 2008, ABB has been producing HVDC products using 150 mm wafers from a pilot line in the current production area. Starting in 2012, the line will be a modern, fully equipped line producing all types of bipolar pro- ducts using 150 mm wafers. Another important new feature is the increased furnace capacity and the new configuration of the furnaces which allows various high temperature processes to be done in each single furnace. Page 6 - IGCT devices, status and short term outlook. A short description of the target markets for the current generation of IGCTs as well as an insight into further improvements within the next year. - Publications calendar

2 Section 2 Marketing Letter Technology Trends BiMOS With this first newsletter issue, we would like to improve communication and reach out to our customers and distributors. We will inform you about new developments on a quarterly basis and are grateful for your feedback and suggestions regarding content: We want to know what you want to know! With our increased production capacity, the main challenge will be to choose the most promising products for development in order to expand ABB s product portfolio even further. November is the month for budgeting and planning the year to come. As we look forward, 2012 will be a year filled with new product developments and new technologies. We are counting on your continued support to achieve our common goal of successfully meeting the world s ever-growing needs for high power semiconductors. Now in product development BIGT: Diode and IGBT designed into one single chip, proven for 3.3 kv and 6.5 kv hard switching applications, offering more power on the same footprint. In addition to increased power density, the BIGT features improved performance in rectifier mode thanks to the larger diode area. BIGT technology will pave the way for future generations of IGBT-based products providing higher power densities without the limitations imposed by diode performance (see figure above). Magazine articles Power Electronic Europe, December 2011: StakPak IGBT Press-packs for the Industrial Market Bodo s Power Systems, November 2011: VIP Interview with Manfred Kraxenberger, Bipolar Production Line Manager of ABB Switzerland Ltd, Semiconductors Power Systems Design, North America, December 2011: IGCT device with extraordinary high SOA ABB Review Magazine issue 3/11: Power on Tap shows an application with ABB s IGCT.

3 Section 3 New Qualified Products BiMOS and Bipolar Application in focus Induction Heating Operation Principle : A conductive and/ or ferro-magnetic object is placed in an AC magnetic field causing it to produce thermal losses by induced currents and/or hysteresis losses Topologies : Series resonant voltage source inverter Parallel resonant current source inverter Main Features: 1.7kV IGBT : More current up to 3600A Suitable applications : Induction Heating, Traction, Wind Power 3.3kV IGBT : Increasing usage in high speed locomotives and EMUs Environmental Specifications In Hipak2 and Hipak1 sizes together with Dual Diode Module Suitable for all topologies in traction application 5SHY 40L4511: Designed for low switching losses 5STP 20N8500: Increased junction temperature in comparison with predecessor 5STP 12N8500 BiMOS and Bipolar Induction Heating products Gold or proton doped Fast Thyristors for CSIs E-doped Fast Thyristors for VSIs Gold or proton doped Fast Recovery Diodes for VSIs IGBTs for HF VSIs (module or presspack) IGCTs in MF CSIs Based on international environmental standards (primarily IEC series), guidelines are given under which the devices should be stored, transported and operated. Environmental specifications for HiPak modules and Bipolar devices in industry and traction are now available on our website ( semiconductors).

4 Section 4 BiMOS products in the pipeline Portrait: ABB Distributor Power Parts AG Main Features of the upcoming products : 2.5kV IGBT : More current up to 1500A Suitable applications : Diesel Locomotives, Wind Power Bipolar products in the pipeline 5SHY 50L5500 will add another voltage class to the HPT-IGCT family. Prototypes available. New 4500V Fast Recovery Diodes 3.3kV IGBT : In Hipak2 and Hipak1 sizes together with Dual Diode Module Suitable applications: Electric Locomotives, Highspeed Trains, EMUs and Medium Voltage Drives in housings H and L. Designed as NPC and Freewheel diodes for IGCT applications. Prototypes available in February PowerParts AG was founded in 2002 after a management-buy-out of the Electrical Components division of ABB Switzerland Ltd, Normelec. Currently, PowerParts has eight employees at their offices in Mägenwil, Switzerland and offers a wide-ranging portfolio of power semiconductors and components for low to high power requirements. Thanks to close cooperation with their suppliers, universal design platforms were created, which can be adapted for customer-tailored solutions in short time. Whether the customer needs a cooling rack, the assembly of a special plug on a GTO, or a complete designtested rectifier, a switch, a power drive or a Softstarter, PowerParts can handle all electrical requirements. In order to better serve their customers, PowerParts now has their own assembly facility complete with testing equipment. Their main goal now and in the future is to provide the customers with the products they need combined with competent service and efficient logistics.

5 Section 5 BiMOS Obsolete products BiMOS Phased-Out products Material/Replaced by 5SMY 76H1200 5SMY 76H1280 5SMY 76J1200 5SMY 76J1280 5SMY 76K1201 5SMY 76K1280 5SMY 76M1200 5SMY 76M1280 5SMY 86H1200 5SMY 86H1280 5SMY 86J1200 5SMY 76J1280 5SMY 86K1201 5SMY 86K1280 5SMY 86M1200 5SMY 86M1280 5SMY 12M1701 5SMY 12M1721 5SMX 12L2511 5SMX 12L2516 5SLX 86E1200 na 5SLX 76E1200 na 5SLX 86F1200 na 5SLX 76F1200 na 5SLX 12H1200 na 5SLX 76H1200 na 5SLX 86H1200 na 5SLX 12L2507 5SLX 12L2517 5SLX 12L2505 5SLX 12L2515 5SLX 12M6500 5SLX 12M6520 5SLX 12M6501 5SLX 12M6521 Material/Last Deliveries 5SMX 76D1264 Dec SMX 76E1264 Dec SMX 76H1264 June SMX 76K1264 June SMX 76L1264 June SMX 76M1274 June SMX 86E1264 Dec SMX 86E1274 Dec SMX 86H1264 June SMX 86H1274 June SMX 86K1264 June SMX 86K1274 June SMX 86L1264 June SMX 86L1274 June SMX 86M1274 June SMY 12N4500 Dec SMY 12N4510 Dec SMY 12M6500 Dec Bipolar Obsolete products Material/Replaced by 5SHY 30L6010 5SHY 42L6500 5SHY 35L4511 5SHY 40L4511 5STP 12N8500 5STP 20N8500 Avalanche diodes stud type 5SDA 09P**#3, 08P**#4, 07P**#5, 06P**#6 and 05P**#7 where ** is the VRRM in hv and # is the version. No replacement parts are available.

6 Section 6 IGCT devices Status and short term outlook Publications Calendar Cross-section of HPT GCT wafer ABB Semiconductors IGCT has been a very successful product. Since its introduction in 1997, the IGCT technology has been continuously improved and further developed. Below is a short description of the target markets for the current generation of IGCTs as well as an insight into further improvements within the next year. The Short Form Catalogue 2012 will contain the following IGCT products: 4.5 kv; Ideal for 3- and 5-level Voltage Source MVA Inverters, Standard & HPT products in a high power and in a fast version, available with Integrated anti-parallel diode (RC-IGCT) and as Asymmetric device 5.5 kv; Ideal for 3- and 5-level Voltage Source MVA Inverters, HPT product, available with Integrated antiparallel diode (RC-IGCT) and as Asymmetric device 6.5 kv; Ideal for 2-level Traction Converters, Traction Supply Converters and DC breakers, HPT Asymmetric device The successful development of the HPT IGCT is a breakthrough in bipolar switch technology. The HPT IGCT device allows very high currents to be switched off under harsh conditions in a controlled and predictable way with low switching losses. The picture above illustrates the HPT functionality, showing a cross section of an HPT GCT wafer. Visible on the top of the wafer are several metallization levels (blue) serving as contacts for both the cathode and gate. During turn-off, electrons with negative polarity are injected into the GCT from the gate to negate the current carriers that have opposite polarity (i.e. positive). The red layer, which is formed by multiple processing steps of the GCT including implantation and diffusion, guide the current carriers away from the cathode and towards the gate. This occurs because the corrugation changes the electrical field and diverts the positive charges away from the cathode. HPT IGCTs can switch off much higher current than is possible with a standard IGCT device. With the 4.5 kv, L size HPT IGCT (5SHY 55L4500), it is safe to switch from 5000A to 2800 VDC over the operating range of temperatures from 0 C to 125 C. The maximum on-state current per HPT IGCT is A. Thanks to these high current ratings, paralleling of IGCT devices is unnecessary to achieve converter power ratings of more than 20 MVA. Further development and optimization will allow for ~6000A turn-off capability at an operating temperature up to 140 C. The next generation of HPT, called HPT+, will be able to control the device leakage current at high temperatures by improved passivation schemes, improved process control during diffusion and improved packaging to further lower the thermal resistance between the GCT wafer and the heat sink. Short Form Catalogue 2012, to be released in January 2012 Updated Flyers for HiPak, IGCT and FRD, to be released at PCIM, May 2012 New Flyer for Industrial Presspack IGBT, to be released at PCIM, May 2012 For more information please contact: ABB Switzerland Ltd, Semiconductors Fabrikstrasse Lenzburg, Switzerland Phone: Fax: abbsem@ch.abb.com m.abb.com Note: We reserve the right to make technical changes or modify the contents of this document withoutr prior notice. With regard to purchase orders, the agreed particulars shall prevail. ABB AG does not accept any responsibility whatsoever for potential errors or possible lack of information in this document. We reserve all rights in this document and in the subject matter and illustrations contained therein. Any reproduction, disclosure to third parties or utilization of its contents in whole or in parts is forbidden without prior written consent of ABB AG. Copyright 2010 ABB All rights reserved