SiC market analysis for material, devices and applications Norstel AB

Transcription

1 SiC market analysis for material, devices and applications Norstel AB 2005

2 Content Applications roadmap New players on the market place Status of SiC market in 2004 and 2009 projection Focus on power electronics Schottky diode business Automotive applications Opto business: SiC vs. sapphire SiC material status CREE and conclusion

3 SiC-based applications roadmap SiC electronics in power distribution networks SiC electronics in rail traction SiC electronics in EV, HEV & FCV cars SiC electronics in industry SiC MESFET in 3G,WiMax, SatCom & defense RF systems SiC Schottky diodes in Power Factor Correctors for power supplies HB-LEDs GaN/SiC for lightning SiC roadmap

4 Who s new on the market place since 2003? Companies: Bridgestone (J). They are using their expertise in SiC powder and poly-crystal substrates to enter in single crystal SiC manufacturing. They have demonstrated 6H polytype. NeoSemiTech (Korea) has entered in SiC single crystal business CR Semiconductor Wafer & Chips (China) is launching developments in SiC Schottky barrier diodes IntrinSiC (US), who has acquired Bandgap Technologies, Inc., proposing silicon carbide wafer products. Okmetic that turns into Norstel (SW), still focusing on HT-CVD grown SiC material. New start-up: Caracal Inc. (US, Pittsburg), hold by Dr. Olle Kordina -> SiC power devices (new gasbased technique epi solution using HCl as an additive, : growth rate x 3: 28µm/h) and SiC material GeneSiC Semiconductor Inc. (US, Maryland), hold by Dr. Ranbir Singh -> SiC devices for ultra-high voltage applications (MOSFETs, IGBTs, Thyristors, ). Under contract with Darpa. TranSiC (SW), funded in 2005, will bring power bipolar transistors to the market during 2006.Pr. Mikael Östling, entrepreneur Bo Hammarlund and Martin Domeij Ph D and researcher at KTH are the three founders SiC new players

5 Status of SiC-based devices in 2004 and 2009 projection 2004 Market status 2004 SiC wafers consumption (2 eq.) Players on the market place HB-LED GaN/SiC $540M Schottky diode MESFET MOSFET / JFET PiN diode In Production $11.7M Pre-prod. ~ 1$M MOSFET:R&D. Pre-prod in 2008 JFET: emerging R&D. Preprod in ,000 x 2 13,000 x 2 < 500 x 2 R&D level R&D level Cree: $240M Osram Infineon Cree Rockwell Rohm Cree: < $1M Rockwell New Japan Radio n/a n/a BJT / Thyristor R&D R&D level n/a Challengers No new company STM Int. Rectifier GE Toshiba Mitsubishi SemiSouth Dynex EcoTron Fuji Northrop Grumman SemiSouth IntrinSiC SiCed Toshiba Mitsubishi Philips Denso Rohm Fuji Sumitomo Rockwell United SiC SiCed Cree GE Rockwell Kansai Electric GE Cree United SiC PowerSiCel 2009 market forecast > $800M depending on Osram involvement in SiC-based LEDs ~$45M for PFC + growing curve for others apps. Could be > $80M depending on SiC vs. GaN competition on 3G & WiMax business Market to start depending on HEV & EV market volume and SiC use in cars > $10M mainly In industry and power distribution Emerging TAM~ $200M / year SiC market segmentation

6 SiC: from material to device to market: Focus on electronic applications Conductive Conductive SiC SiC Semi-insulating Semi-insulating SiC SiC Rectifiers Rectifiers Switches Switches Bipolar Bipolar diodes diodes Schottky Schottky diodes diodes Unipolar Unipolar transistors transistors Bipolar Bipolar transistors transistors RF RF transistors transistors PiN PiN MOSFET MOSFET JFET JFET BJT BJT Thyristor Thyristor (GTO) (GTO) MESFET MESFET > 2 kv kv > -> kv kv > -> kv kv > 2 kv kv RF RF / / HF HF SiC SiC market crystal segmentation growth

7 SiC devices: Power electronics market 2005 Power electronics

8 SiC power electronic devices: Market status: small but promising Reality of the market in 2005: As in 2003, only one component, Schottky diode (SBD), has reached the commercialization stage and met the market requirements. The applicative market is the PFC (Power Factor Correctors) for high-end power supplies. 3 main players are active on this segment: Infineon, Cree and Rockwell revenues for this segment will reach $17.6M at device level We forecast this market will handle 6.5 million units of Schottky devices in The related wafers consumption should reach about 13,000 substrates (2 +3 ). Transition to 3 wafer is now a clear trend Power electronics

9 SiC power electronic devices: Market status: small but promising This market level is not big enough to sustain the activity of many other companies!!..... But future can be brighter: With Schottky ASP reduction down to ~$0.2/amp, the potential market can be extended to mid and even low-end applications using PFC: a ~$45M market is viewed in 2009 for SBD with a related 35,000 wafers consumption. Automotive manufacturers are more and more involved with SiC devices to develop efficient hybrid or full electric cars. Coupled with high power density silicon transistors, it will help to decrease power loses and system size/weigh in inverters and converters. Next step will be the emergence of reliable SiC transistors to provide a full-sic solution. But: EV or HEV market is slowly emerging. Big volumes are linked to oil price, ecological behavior and governmental financial incentives Silicon is still on the run to compete in high power density field. Trench MOSFET technology is a pertinent candidate to take market share over SiC future transistors. Other applications are expected improvements thanks to SiC devices: Defense, rail traction, industry, electrical power distribution network, Power electronics

10 SiC Schottky Barrier Diode (SBD) Device and related markets 2005 Power electronics: Schottky

11 SiC Schottky diodes 2004 market status In terms of components using SiC hetero-structures as active layers, the most advanced component remains SiC Schottky diodes. This component is at a production level and we estimate that ~4 million Schottky diodes have been produced in Today, only 3 companies are producing such a component: Cree (US) Infineon (D): Epi and R&D made by SiCed (Erlangen, D) and chips made in Infineon 3 fab in Villach (Au). Customers example: Lambda (NV series power supplies). Rockwell (US). Rohm (J) should have been entered in Schottky business spring Others companies like Fuji (J), Hitachi (J), International Rectifier (I), Matsushita (J), STM (I), Toshiba (J), EcoTron (J), CSWC (C) have a strong R&D related to process Schottky diodes but have no entered in a production stage yet Power electronics: Schottky

12 SiC Schottky diodes Devices specs roadmap A/1200V 40A/1200V 100A/1200V Roadmap is given for single chip device This evolution is linked to the improvement of useable area, and so to micropipes density A 100A diode will need about 10x10 mm² micropipe-free active area V breakdown voltage requires about µm epilayer thickness. It s now all a question of material!. and cost Power electronics: Schottky

13 SiC Schottky diodes market forecasts SiC Schottky diodes market forecasts 0.3$ / Amp Volume (units) Market (M$) 0.5$ / Amp Cree shows $3 M revenues on Schottky business in 2004 Power electronics: Schottky

14 SiC devices: Automotive applications 2005 Power electronics: Automotive

15 Why SiC in cars? Electronics is now accounting for more than 25% of cars cost. Power electronics will be more and more implemented in car due to: The emergence of 42 volts electronics with related systems: electric steering and breaks, X-by-wire commands, piezo fuel injectors, The high market penetration of hybrid cars (HEV), electric cars (EV) and future fuel-cells cars (FCV) over regular internal combustion engine cars (ICE). The need for high pressure and high temperature sensors that can benefit from SiC hardness and robustness. In every case, SiC can handle improved power density with lower power losses, and will help to decrease the size and so the weight of power drivers. When? Today, current systems are using silicon devices but weight, size, power efficiency and limited junction T remain an issue. According to car manufacturers, SiC could be implemented in large volume by SiC diodes will be the first target, followed by SiC transistor switch when it will be ready. Use of silicon trench-gate transistor could bring a first solution Power electronics: Automotive

16 Automotive Application: Hybrid Electrical Vehicle (HEV) requirements. DC-DC converter Goal: to provide a high voltage (400V) to 12V output, with an option to provide a 42V output. Typical power rating: 3 to 10kW with switching frequency of khz Isolated full-bridge step-down dc-dc converter Inverter (DC-AC 3-phases converter) Goal: To develop an integrated motor/controller comprised of the motor and inverter in a single package. The goals for the system include an integrated power electronics system capable of 15 years lifetime and capable of delivering at least 55 kw of power for 18 sec and 30 kw continuous power. Up to 300 A per motor phase Cost < 7$/kW Typical 400 V DC battery pack Each transistor and diode has to handle 400 V and 200 A peaks. Three-phase inverter traction drive Typical motor: 30 kw, 230 V, 4-pole, 3000 rpm Power electronics: Automotive

17 Sales projection for EV, HEV & FCV to 2020 in million units Forecasted annual sales of EV+HEV+FCV (million units) Emergence of fuel-cell based electrical cars Power electronics: Automotive

18 Sales volume projection for SiC diodes and transistors in automotive applications Forecasts for SiC diodes & Transistors volume in EV, HEV and FCV SiC transistors need (Munits) SiC diodes need (Munits) Based on average figure of 24 SiC diodes and 10 SiC transistors per car. SiC market share goes from 5% in 2008 to 50% in Power electronics: Automotive

19 SiC / sapphire substrates volume estimation for GaN-based LED production Market hypothesis: Illumination high-volume market will not start before 2007 SiC substrates (mainly Cree and Osram) will loose market shares, facing sapphire high volume productions from Asia LED ASP will remain around 0.10$ (Emergence of new high-end products with higher ASP facing ramping-up of low-end, large scale production LEDs with lower ASP) Technical hypothesis: Production yield will reach 85% in ,000 LEDs on 2 sapphire substrate 16,000 LEDs on 2 SiC substrate SiC-based LEDs represented 25 % of market in 2001 and is now only 12 % in wafers volume 3,5 3,0 2,5 2,0 1,5 1,0 0,5 0,0 SiC (2") Sapphire (2") 0,16 0,68 Number of 2" equivalent substrates to process for GaN-based LED production (Million units) 0,24 1,15 0,27 1,59 0,30 2,12 0,32 2,50 0,33 2,71 0,36 2, Optoelectronics

20 From a material point of view Total SiC substrates market was in the $90M range in II-VI + Norstel + IntrinSiC + Dow Corning + Sixon +Nippon Steel +SiCrystal + Others 30% This figure includes the internal Cree consumption for LED business We consider the remaining open market to be ~$30M Cree 70% SiC substrates sales breakdown over the $30M open market SiC Material

21 Cree business-model evolution and conclusion Fact 1: Cree was representing approximately 1/4 of wafers consumption for HB- LEDs production in 2001 and that should decrease down to 10% in Fact 2: Cree is moving to packaged LEDs business. Fact 3: Osram, the only other SiC user for LED business, is now trying to escape from Cree monopoly using thin-film technology on sapphire substrates. Analysis: SiC is no more the ideal substrate for high performances LEDs: Sapphire can compete on high-end LEDs segment (see Lumileds, Nichia, ). Thin-film approach allows now back-face contact possibility, like SiC does -> smaller dies. Cree has to move one step ahead, to packaged LEDs, in order to benefit from larger added-value products. Conclusion: SiC has to find another playground to grow. Opto business is captive to Cree and the emergence of electronic devices with related applications is the only way to make a profitable business at material or component level. SiC has to fight with GaN on RF markets but is the only pertinent solution for high power electronic market, especially for automotive, industry and power distribution. SiC transistor is now widely welcome CREE & Conclusion

22 High Technology Focus SiC material, devices & applications Evaluation of the SiC market and analysis of the major technology and industrial trends 2005 edition 89 profiles

23 COMPONENTS Acreo - Sweden Advanced Power Technology - USA Caracal - USA Cree - USA Denso - JP Dynex Semiconductor - UK Fuji Electric - JP Fujitsu Laboratories - JP GE Global Research Center USA GeneSiC Semiconductor Inc. - USA Hitachi Research Laboratory - JP Infineon Technologies - GER International Rectifier - IT Kansai Electric Power - JP Matsushita Electric Industrial - JP Microsemi - USA Mitsubishi Electric - JP NEC - JP Nissan Motor - JP Norse Semiconductor Northrop Grumman - USA Oki Electric Industry - JP Osram Opto Semiconductors - GER Philips Semiconductors Nijmegen - NL Qinetiq - UK RF Micro Devices Charlotte - USA Rockwell Scientific - USA Rohm-JP Sanyo Electric Company - JP Shindengen Electric Laboratories - JP Siced - GER STMicroelectronics FR and IT Tohoku Electric Power JP Toshiba JP Transic - SW United Silicon Carbide - USA

24 EQUIPMENTS Annealsys - FR Epigress - SW Linn High Therm GER LPE EPI IT

25 MATERIALS Bridgestone - JP Caracal - USA Cree - USA Dow Corning - USA Hoya Advanced Semiconductor Technologies -JP Intrinsic USA Neosemitech - Korea Nippon Steel JP Norstel - SW Novasic - FR Semisouth - USA Showa Denko - JP SiCrystal - GER Sixon - JP Soitec - FR Technologies and Devices International - USA Tohoku Electric Power Toshiba Ceramics, Tocera JP Toyota - JP II VI - USA

26 MEMS Boston Microsystems - USA Cornell University USA FLX Micro - USA Innovative Scientific Solutions - USA Kulite - USA Olivetti I Jet - IT Taitech - USA

27 R&D CENTERS AIST - JP APEI - USA Auburn University - USA Case Western Reserve University - USA Centro Nacional De Microelectronica - SP Chalmers University of Technology - SW Crhea - FR F-A University Erlangen Nuremberg GER Institut für Kristallzüchtung - GER INPG FR Ioffe Physico-Technical Institute - RUS Kyoto University - JP Linköping University - SW Mississippi State University - USA Nasa Glenn Research Center - USA Purdue University - USA Rensselaer Polytechnic Institute - USA Rutgers University, SiCLab - USA Texas A&M University - USA University of Arkansas - USA University of Newcastle - UK University of South Calorina - USA University of South Florida - USA

28 EUROPE

29 ACREO ACREO AB Electrum 236 SE Kista SWEDEN Tel: Fax: info@acreo.se Key managers and/or contacts Susan Savage SiC Activity Manager susan.savage@acreo.se Company Overview Acreo AB is a non-listed limited company. The majority of the shares are held by the Association FMOF(Mikroelektronisk och Optisk Forskning). The minority owner is the holding company IRECO, controlled by the Swedish Ministry of Industry and the Foundation KKS. ACREO is a result of the merging of IOF (Institute of Optical Research) and IMC (Industrial Microelectronics Center) in Acreo s technical development areas are Imaging, Interconnect and Packaging, Photonics, RF and Power Components, Microsystem Technology, Surface Characterisation and System-level Integration. Business Services is dedicated to technology transfer and market support for small and medium-sized companies. Semiconductor technology plays a central role in all operations. Market and customers Open collaboration with all kind industrial players, as Volvo, Ford, Vattenfall or AppliedSensor. As a laboratory, they offer technologies, not products. Agreements and Alliances Partners University of Linköping Partnership type Swedish centre for Sensor Development at

30 ACREO 2 Mecel in Åmål Volvo in Göteborg Vattenfall AppliedSensor Hoya Advanced Semiconductor Technology (HAST) Linköping university (S-SENCE) : R&D on SiC gas sensor R&D collaboration Financial data Investors and/or parent company % of shares FMOF 60% IRECO AB 40% Spin off AMDS - Advanced Microwave Device Solutions AMDS - Advanced Microwave Device Solutions - is a spin-off company from Acreo launched at the end of 2001 in order to exploit the development of SiC RF components that has been on-going at Acreo since It has been sold to Intrinsic Inc in In million (est.) Total sales 22,2MSEK 21,2MSEK Employees In 2004, Acre revenues coming from industrial partners accounted for approximately 44% Main Products SiC Gas sensor : Acreo had worked together with the Swedish centre for Sensor Development at Linköping university (S-SENCE) to develop gas sensors based on the semiconductor material SiC. The collaboration has resulted in a proprietary design based on a MOSFET type component using a catalytic metal as the active gate contact. S-SENCE have made detailed studies of the gas sensing capability of different catalytic metals while Acreo have been responsible for the high temperature MOSFET design. The silicon carbide based sensors, MISiC sensors, can be operated at temperatures up to 700 C and have the advantage of being chemically very inert. These sensors are developed in a project with Volvo in Göteborg and Ford in Dearborne, Michigan, USA to control the SCR, Selective Catalytic Reduction, process, where NO and NO2 are reduced by NH3 in the catalytic converter to nitrogen and water. NH3 is injected into the exhaust gases as urea dissolved in water, which forms NH3 and CO2. According to industry partners, this method will have to be used to fulfill the much stricter legislations for NOx emissions, which are valid from year 2007.