ReRAM Technology, Versatility, and Readiness
|
|
- Everett Webster
- 6 years ago
- Views:
Transcription
1 ReRAM Technology, Versatility, and Readiness Hagop Nazarian VP of Engineering & Cofounder Santa Clara, CA 1
2 Introduction to ReRAM ReRAM Technology Attributes Scalability Ease of integration with CMOS Architectural Flexibility Energy reduction 40nm ReRAM Product results Performance Endurance Retention Status & Conclusion Santa Clara, CA 2
3 Filamentary ReRAM technologies leads to a simple yet powerful non-volatile technology Top Electrode (Select) Top Electrode Select Switching Medium Top Electrode Switching Medium Switching Medium Bottom Electrode Bottom Electrode Santa Clara, CA 3
4 Normalized Current Normalized Current Normalized Current Wide range of applications with ReRAM Crossbar ReRAM Cell Crossbar Selector Crossbar SR Cell R + = S R S Suited for low latency, high speed embedded memory Santa Clara, CA 4 Suited for high density high performance NAND or SCM memory
5 ReRAM Technology Attributes Santa Clara, CA 5
6 ReRAM performance improves with scaling Roff Ron Scaling ReRAM device Roff 1 Cell Area Ron Stays nearly constant Roff/Ron ratio improves Sensing window improves Improves BER r = 40nm r=20nm r = 10nm Ioff=1uA, Roff=1MΩ, Ron=10KΩ Roff/Ron=100 Ioff=0.25uA, Roff=4MΩ, Ron=10KΩ, Roff/Ron=400 Ioff=62nA, Roff=16MΩ,Ron=10KΩ, Roff/Ron=1600 Santa Clara, CA 6
7 Ease of integration with CMOS Back-end process No impact to CMOS transistors ReRAM located between metal layers Adds only 1 to 2 masks & 8 processing steps 32% lower cost Smaller die size 1T1R ReRAM 1P9M Santa Clara, CA 7
8 ReRAM enabling scalability, performance, monolithic integration Conventional Flash ReRAM Architectural Advantages 4 terminal device D/G/S/Substrate 2 terminal device Smaller device Simpler to operate Common substrate Has no common terminal Allows Byte alterability Byte Write Front-end Impacts CMOS transistors Back-end Area efficiency No impact on CMOS transistors Requires additional HV transistors Scaling Limitations or Degradations No HV transistors needed No Scaling limitations or Degradations Much easier to design and integrate with CMOS and uses 1 or 2 masks Well Suited for advanced nodes Monolithic integration with CMOS Santa Clara, CA 8
9 Major system energy reduction with ReRam Energy consumption ratio NAND/ReRAM based on SSD & NVDIMM-P Write Amplification NAND based SSD (nj) SSD 512B Write ReRAM(nJ) ReRAM Energy Reduction Santa Clara, CA 9 NAND based NVDIMM-P(nJ) NVDIMM-P 64B Write ReRAM(nJ) ReRAM Energy Reduction X X X X X X X X ReRAM based SSD provides 2X to 5X energy reduction ReRAM based NVDIMM provides 20X to 40X energy reduction
10 ReRAM Product Array Results Performance Endurance Retention Santa Clara, CA 10
11 Stable performance across VCC and wide temp range Superior Speed stability across temperature and VCC is established Santa Clara, CA 11
12 Problems with aging Flash technology Off On Vt Flash distributions widens Flash distribution gap closes increasing BER Santa Clara, CA 12
13 300K endurance cycles with no degradation 32Kb Endurance Cycling 100% Cycle 0 90% Cycle 10 80% Cycle % Cycle 1K 60% Cycle 10K 50% Cycle 50K 40% Cycle 100K 30% Cycle 200K 20% Cycle 300K 10% 0% Cell Current (ua) % 10% 8% 6% 4% 2% Cycle 0 Cycle 10 Cycle 100 Cycle 1K Cycle 10K Cycle 50K 32Kb Endurance Cycling Cycle 100K Cycle 200K Cycle 300K NAND NOR Flash 0% Cell Current (ua) ReRAM On and Off Distribution width stayed the same!!! ReRAM On and Off Distribution gap increased!!! Santa Clara, CA 13
14 ReRAM vs. Flash Distribution over endurance & retention Off On Off FLASH Vt Off ReRAM On I ReRAM Distribution gap & width does not close or widen!! Santa Clara, CA 14
15 ReRAM distribution is unchanged after 5X solder reflow retention test 100% 90% 80% 70% 60% 50% 40% 30% 20% 10% 0% Reflow Retention Pre Reflow 5X Cell Current (ua) 10% 9% 8% 7% 6% 5% 4% 3% 2% 1% 0% Reflow Retention Pre Reflow 5X Cell Current (ua) Santa Clara, CA 15
16 ReRAM retention post 10K cycles is solid No changes 100% 90% 80% 70% 60% 50% 40% 30% 20% 10% 0% 32Kb Data Retention (Post 10K Cycle) Pre Bake Bake Cell Current (ua) 12% 10% 8% 6% 4% 2% 0% 32Kb Data Retention (Post 10K Cycle) Pre Bake Bake Cell Current (ua) Santa Clara, CA 16
17 ReRAM retention post 300K cycles is solid No changes 100% 90% 80% 70% 60% 50% 40% 30% 20% 10% 0% 32Kb Data Retention (Post 300K Cycle) Pre Bake Bake Cell Current (ua) 14% 12% 10% Santa Clara, CA 17 8% 6% 4% 2% 0% 32Kb Data Retention (Post 300K Cycle) Pre Bake Bake Cell Current (ua)
18 ReRAM is here and ready for the future Impressive reliability with robust retention post 10K & 300K endurance cycles ReRAM distributions remain stable post 5X Solder reflow Consistent ReRAM array performance across temperature (-40, 125C) and VCC range Starting production with SMIC for ReRAM customer designs 2X node ReRAM integration in progress Already started 1X node ReRAM design with customer Santa Clara, CA 18
Non-volatile STT-RAM: A True Universal Memory
Non-volatile STT-RAM: A True Universal Memory Farhad Tabrizi Grandis Inc., Milpitas, California August 13 th, 2009 Santa Clara, CA, USA, August 2009 1 Outline Grandis Corporation Overview Current Flash
More informationGT Silver Button Technology Socket for Semiconductor Test
GT Silver Button Technology Socket for Semiconductor Test Toll Free: (800) 404-0204 U.S. Only Tel: (952) 229-8200 Fax: (952) 229-8201 email: info@ironwoodelectronics.com Application Need Prototype Test
More informationCMPEN 411 VLSI Digital Circuits Spring Lecture 22: Memery, ROM
CMPEN 411 VLSI Digital Circuits Spring 2012 Lecture 22: Memery, ROM [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] Sp12 CMPEN 411 L22 S.1
More informationCMPEN 411 VLSI Digital Circuits Spring Lecture 24: Peripheral Memory Circuits
CMPEN 411 VLSI Digital Circuits Spring 2012 Lecture 24: Peripheral Memory Circuits [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] Sp12
More informationEnergy Efficient Content-Addressable Memory
Energy Efficient Content-Addressable Memory Advanced Seminar Computer Engineering Institute of Computer Engineering Heidelberg University Fabian Finkeldey 26.01.2016 Fabian Finkeldey, Energy Efficient
More informationStorage and Memory Hierarchy CS165
Storage and Memory Hierarchy CS165 What is the memory hierarchy? L1
More informationHADES Workshop. May 24-26, 2011 Perma Works LLC. My thanks to the GNS and Tiger Energy Services. Randy Normann, CTO
HADES Workshop May 24-26, 2011 Perma Works LLC My thanks to the GNS and Tiger Energy Services Randy Normann, CTO randy@permaworks.com Perma Works LLC Albuquerque, New Mexico, USA Perma Works Acquiring
More informationWhite Paper: Pervasive Power: Integrated Energy Storage for POL Delivery
Pervasive Power: Integrated Energy Storage for POL Delivery Pervasive Power Overview This paper introduces several new concepts for micro-power electronic system design. These concepts are based on the
More informationgan power Energy-efficient power electronics with Gallium Nitride transistors Leti, technology research institute Contact:
gan power Energy-efficient power electronics with Gallium Nitride transistors, technology research institute Contact: leti.contact@cea.fr A market in growth GaN devices for next-era power-electronics applications
More informationGLASS TRANSITION TEMPERATURE (Tg) LAP SHEAR STRENGTH (PSI ) 65 C >2, , C >2, , C >2, ,946 1.
epotek.com Optical Epoxy Technology s extensive line of optical adhesives is used for bonding and coating in many applications; most commonly in fiberoptics. Our epoxy adhesives are frequently used to
More informationMotor Driver PCB Layout Guidelines. Application Note
AN124 Motor Driver PCB Layout Guidelines Motor Driver PCB Layout Guidelines Application Note Prepared by Pete Millett August 2017 ABSTRACT Motor driver ICs are able to deliver large amounts of current
More informationgan power Energy-efficient Power Electronics using Gallium Nitride Transistors Leti, technology research institute Contact:
gan power Energy-efficient Power Electronics using Gallium Nitride Transistors, technology research institute Contact: leti.contact@cea.fr A GROWTH MARKET GaN Devices for Next-Era Power Electronics $ 600.0M
More informationPolyester (PET) film capacitor for surface mounting. Encapsulation in self-extinguishing material meeting the requirements of UL 94V-0.
MMC Metallized polyester (PET) SMD According to IEC 6384-19 RoHS Compliant typical applications Construction.5 H B Bypassing, signal coupling. General purpose for highest reliability. Technical data Polyester
More informationUTBB FD-SOI: The Technology for Extreme Power Efficient SOCs
UTBB FD-SOI: The Technology for Extreme Power Efficient SOCs Philippe Flatresse Technology R&D Bulk transistor is reaching its limits FD-SOI = 2D Limited body bias capability Gate gate Gate oxide stack
More informationBenefits of SiC MOSFET technology in powertrain inverter of a Formula E racing car
Benefits of SiC MOSFET technology in powertrain inverter of a Formula E racing car Dr.-Ing. Felipe Filsecker Application Engineer ROHM Semiconductor GmbH ROHM SiC device development 18 years of experience
More informationThin Film Chip Resistor (ARG Series)
Construction D1 L (ARG Series) Features -Advanced thin film technology -SMD Type designed for automatic insertion -Wide resistance range 1ohm ~ 2.49Mega ohm Applications -Medical Equipment -Testing / Measurement
More informationSuper Capacitors To Improve Power Performance.
Super Capacitors To Improve Power Performance. Low ESR High Capacitance Wide Range of Operating Temperatures Wide Packaging Capability Wide Footprint Selection High Power Safe Environmentally Friendly
More informationBuilding Blocks and Opportunities for Power Electronics Integration
Building Blocks and Opportunities for Power Electronics Integration Ralph S. Taylor APEC 2011 March 8, 2011 What's Driving Automotive Power Electronics? Across the globe, vehicle manufacturers are committing
More informationHigh Speed V-Series of Fast Discrete IGBTs
High Speed V-Series of Fast Discrete IGBTs Taketo Watashima Ryu Araki ABSTRACT Fuji Electric has developed and commercialized the High Speed V-Series of discrete IGBTs (insulated gate bipolar transistors)
More informationMODELING QLC FLASH RELIABILITY. Nenad Miladinovic
MODELING QLC FLASH RELIABILITY Nenad Miladinovic INTRODUCTION Introduction of 3D NAND has put performance of TLC parts on par with performance of 2D MLC parts. The gap has emerged at the lower end of the
More informationGetting the Lead Out December, 2007
Getting the Lead Out December, 2007 Tom DeBonis Assembly & Test Technology Development Technology and Manufacturing Group Summary Intel has removed the lead (Pb) from its manufacturing process across its
More informationFuture Trends in Microelectronic Device Packaging. Ziglioli Federico
Future Trends in Microelectronic Device Packaging Ziglioli Federico What is Packaging for a Silicon Chip? 2 A CARRIER A thermal dissipator An electrical Connection Packaging by Assy Techology 3 Technology
More informationEnhancing Energy Efficiency of Database Applications Using SSDs
Seminar Energy-Efficient Databases 29.06.2011 Enhancing Energy Efficiency of Database Applications Using SSDs Felix Martin Schuhknecht Motivation vs. Energy-Efficiency Seminar 29.06.2011 Felix Martin Schuhknecht
More informationINSTALLATION MANUAL HARLEY-DAVIDSON V-ROD DESTROYER DATA ACQUISITION SYSTEM (Part Number 200-KT-V300D)
INSTALLATION MANUAL HARLEY-DAVIDSON V-ROD DESTROYER DATA ACQUISITION SYSTEM (Part Number 200-KT-V300D) The Racepak data acquisition system you have purchased for your Harley-Davidson Destroyer has been
More informationElectromechanical Rotary Actuator - EA 8132
Electromechanical Rotary Actuator - EA 8132 This actuator is used in unmanned air vehicles and also throttle door controls and any accurate surface control. These actuators are designed to operate under
More informationThe World Leader in Force Measurement Solutions
The World Leader in Force Measurement Solutions With the creation of the Interface AxialTQ torque transducer, we are again leading the way with a unique combination of accuracy, reliability and ease of
More informationCompact Size: "5.4mm. GX-5SU(B) is just 5.4mm in diameter, the smallest in existing DC two-wire sensors. It saves you space.
SERIES DC -wire Cylindrical Inductive Proximity High Performance & Ease of Use Marked Conforming to EMC Directive Robust in Tightening The tightening torque has been improved to approx. four times greater
More informationMaximum Demand Control using Microcontroller AT89c51
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE) e-issn: 2278-1676,p-ISSN: 2320-3331, PP 18-23 www.iosrjournals.org Maximum Demand Control using Microcontroller AT89c51 Apurva A. Bhagwat
More informationFlexible Hybrid Systems: High Performance CMOS with Printed Electronics
Flexible Hybrid Systems: High Performance CMOS with Printed Electronics Defense Manufacturing Conference November 26, 2012 Rich Chaney Approved for Public Release www.americansemi.com Flexible Hybrid System
More informationSurface MEMS Design Examples Dr. Lynn Fuller Webpage:
ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING Surface MEMS Design Examples Webpage: http://people.rit.edu/lffeee 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035 Email:
More informationHigh Performance Supercapacitor (EDLC) DMT Series. O84E.pdf Jun.15,2016
High Performance acitor (EDLC) DMT Series O8E.pdf Jun.5,6 O8E.pdf Jun.5,6 EU RoHS Compliant For r o ur 'Mur A ro c o ' Safety Standard Certification O8E.pdf Jun.5,6 High Performance acitor (EDLC) DMT Series:
More informationComposite Layout CS/ECE 5710/6710. N-type from the top. N-type Transistor. Polysilicon Mask. Diffusion Mask
Composite Layout CS/ECE 5710/6710 Introduction to Layout Inverter Layout Example Layout Design Rules Drawing the mask layers that will be used by the fabrication folks to make the devices Very different
More informationPOWERED BY LITHIUM. DRIVEN TO PERFORM.
POWERED BY LITHIUM. DRIVEN TO PERFORM. OUTMANEUVER. OUTPERFORM. OUTLAST. Engineered around a proven and powerful lithium-ion battery pack, the Raymond 8250 Walkie Pallet truck lets you run longer, recharge
More informationHow to Develop Qualification Programs for Lead Free Products
How to Develop Qualification Programs for Lead Free Products by Mike Silverman Managing Partner Ops A La Carte mikes@opsalacarte.com www.opsalacarte.com (408) 472-3889 Abstract There are significant reliability
More informationGX-5SU(B) is just 5.4mm in diameter, the smallest in existing DC two-wire sensors. It saves you space. GX-12ML(B) Conventional model
SERIES DC -wire Cylindrical Inductive Proximity High Performance & Ease of Use Marked Conforming to EMC Directive Robust in Tightening The tightening torque has been improved to approx. four times greater
More informationDS1250W 3.3V 4096k Nonvolatile SRAM
19-5648; Rev 12/10 3.3V 4096k Nonvolatile SRAM www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k
More informationVanadium Battery Initial Test Results
Vanadium Battery Initial Test Results Henrik Bindner, Claus Krogh Ekman Risø DTU Energy Storage Workshop, Santa Clara 29-30 April 2010 Targets for wind energy in Denmark Current situation 3400MW installed
More informationCompact Size: "5.4mm. GX-5SU(B) is just 5.4mm in diameter, the smallest in existing DC two-wire sensors. It saves you space.
INDUCTIVE SERIES DC -wire Cylindrical Inductive Proximity G-8H/8H G-N G-8U G-6 Robust in Tightening The tightening torque has been improved to approx. four times greater than that of conventional models
More informationSiemens HYB39S64800AT-8 64M SDRAM Cell Analysis Report
February 25, 2000 Siemens HYB39S64800AT-8 64M SDRAM Cell Analysis Report Abstract: The HYB39S64800AT-8 is manufactured in a triple metal 0.25µm CMOS technology. This process has been developed by the joint
More informationB Unit: mm TYPE A B C D E F. How to Order KL 1410 M T R60. SEI Type Dimensions Tolerance Packaging Inductance
DIP Power Inductor KL Scope This specification applies to DIP Power Choke. High power Features Magnetic shielded construction for high density board assembly High performance excellent DC current characteristics
More informationBooth sessions Melexis analyst day 2018
Booth sessions Melexis analyst day 08 BMW Brand Store - Boulevard de Waterloo, 4 Waterloolaan - 000 Brussels Bruno Boury BU: Sense & Drive PL: Current Sensors CURRENT SENSORS PRODUCT PORTFOLIO Adjacent
More informationVLS-E series. Inductors for Power Circuits. Wound Ferrite
May 2013 Inductors for Power Circuits Wound Ferrite VLS-E series VLS201610E VLS201612E VLS2010E VLS2012E VLS252008E VLS252010E VLS252012E VLS252015E VLS3010E VLS3012E VLS3015E VLS4012E (1/52) REMINDERS
More informationCOTAG GENERAL DESCRIPTION
GENERAL DESCRIPTION The YF8036 is a highly integrated Li-ion battery linear charging management device targeted at space limited portable applications. The YF8036 offers an integrated MOSFET and current
More informationHigh Performance Electrical Double Layer Capacitor DMF Series
High Performance Electrical Double Layer Capacitor DMF Series High Performance Electrical Double Layer Capacitor To meet consumer demand for mobile devices with greater effi ciency and functionality, Murata
More informationREDCUBE The Impressive Press-Fit Technology and more
REDCUBE The Impressive Press-Fit Technology and more High amperage solution Superior mechanical retention these are. Terminals for Power! AGENDA Press-fit technology What is it? Advantages Installation
More informationGX-5SU(B) is just 5.4 mm 0.213in in diameter, the smallest in existing DC two-wire sensors. It saves you space.
DC 2-wire Cylindrical Inductive Proximity SERIES High performance & ease of use Amplifier Built-in Robust in tightening The tightening torque has been improved to approx. four times greater than that of
More informationMetal Thermal Materials Types Applications Testing
Metal Thermal Materials Types Applications Testing R.N. Jarrett, C.K. Merritt, J. P. Ross Indium Corporation MEPTEC 2008 Metal TIMs Reflowed NOT Reflowed Physical Types Solder Lead or Lead Free High Temp
More informationThick Film Arrray Chip Resistor RP164PJxxx Series
Thick Film Arrray Chip Resistor Array Chip Resistor 4 Element 0603 Convex Types Features Convex Termination Less board space than individual chip resistors Cost reduction efficiency by eliminating mounter
More informationAdvantage Memory Corporation reserves the right to change products and specifications without notice
SD872-8X8-72VS4 SDRAM DIMM 8MX72 SDRAM DIMM with ECC based on 8MX8, 4B, 4K Refresh, 3.3V DRAMs with SPD GENERAL DESCRIPTION The Advantage SD872-8X8-72VS4 is a 8MX72 Synchronous Dynamic RAM high-density
More informationA 0.35um CMOS 1,632-gate count Zero-Overhead Dynamic Optically Reconfigurable Gate Array VLSI
A 0.35um CMOS 1,632-gate count Zero-Overhead Dynamic Optically Reconfigurable Gate Array VLSI Minoru Watanabe and Fuminori Kobayashi Department of Systems Innovation and Informatics Kyushu Institute of
More informationDS1250Y/AB 4096k Nonvolatile SRAM
19-5647; Rev 12/10 www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM
More informationelabtronics Voltage Switch
elabtronics Voltage Switch Want to trigger a device when a monitored voltage, temperature or light intensity reaches a certain value? The elabtronics Voltage Switch is an incredibly easy way of doing it.
More informationIEC APPROVAL TESTS
IEC61427-1 APPROVAL TESTS Edition 1.0 : 2013-04 Secondary cells and batteries for renewable energy storage General requirements and methods of test Part 1 : Photovoltaic off-grid application Flooded lead-acid
More informationMultilayer Chip Beads / CP TYPE(Large Current)
Multilayer Chip Beads / CP TYPE(Large Current).Features: 1.Closed magnetic circuit structure allows high density mounting while preventing crosstalk. 2.Extremely high reliability due to entirely monolithic
More informationDirect-Mapped Cache Terminology. Caching Terminology. TIO Dan s great cache mnemonic. UCB CS61C : Machine Structures
Lecturer SOE Dan Garcia inst.eecs.berkeley.edu/~cs61c UCB CS61C : Machine Structures Lecture 31 Caches II 2008-04-12 HP has begun testing research prototypes of a novel non-volatile memory element, the
More information1 Alumina Substrate 5 External Electrode (Sn) 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO 2 ) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass)
Thick Film Chip Resistor CR Series Construction 1 Alumina Substrate 5 External Electrode (Sn) 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO 2 ) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier
More informationNotes: Clock Frequency (MHz) Target t RCD- t RP-CL t RCD (ns) t RP (ns) CL (ns) A
SDR SDRAM MT48LC4M32B2 1 Meg x 32 x 4 s 128Mb: x32 SDRAM Features Features PC100-compliant Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column
More information1-1. Basic Concept and Features
Chapter 1 Basic Concept and Features 1. 2. 3. 4. 5. 6. Basic Concept of the Automotive Module Direct Liquid-cooling Structure 1-3 Feature of X-series Chips On-chip Sensors Application of High-strength
More information128Mb Synchronous DRAM. Features High Performance: Description. REV 1.0 May, 2001 NT5SV32M4CT NT5SV16M8CT NT5SV8M16CT
Features High Performance: f Clock Frequency -7K 3 CL=2-75B, CL=3-8B, CL=2 Single Pulsed RAS Interface Fully Synchronous to Positive Clock Edge Four Banks controlled by BS0/BS1 (Bank Select) Units 133
More informationAdditional Wafer Fabrication Capacity for Vishay Siliconix ICs
Additional Wafer Fabrication Capacity for Vishay Siliconix ICs DESCRIPTION OF CHANGE: To meet increasing demand, Vishay Siliconix has expanded capacity for additional IC wafer fabrication to foundry partner
More informationTS1SSG S (TS16MSS64V6G)
Description The TS1SSG10005-7S (TS16MSS64V6G) is a 16M bit x 64 Synchronous Dynamic RAM high-density memory module. The TS1SSG10005-7S (TS16MSS64V6G) consists of 4 piece of CMOS 16Mx16bits Synchronous
More informationSuper Capacitors To Improve Power Performance.
Super Capacitors To Improve Power Performance. Low ESR High Capacitance Wide Range of Operating Temperatures Wide Packaging Capability Wide Footprint Selection High Power Safe Environmentally Friendly
More informationHIGH VOLTAGE THICK FILM CHIP FIXED RESISTOR
HIGH VOLTGE THIK FILM HIP FIXED RESISTOR 3000V Max Operating voltage 3000V Stable electrical capability, high reliability Superior mechanical and frequency characteristics ROHS ompliant with RoHS directive
More informationThe BEEST: An Overview of ARPA-E s Program in Ultra-High Energy Batteries for Electrified Vehicles
The BEEST: An Overview of ARPA-E s Program in Ultra-High Energy Batteries for Electrified Vehicles David Danielson, PhD Program Director, ARPA-E NDIA Workshop to Catalyze Adoption of Next-Generation Energy
More informationOpportunities & Challenges Energy Storage
M. Scott Faris CEO faris@planarenergy.com 407-459-1442 Opportunities & Challenges Energy Storage February 2011 The National Academies Workshop Phoenix, AZ Battery Industry is Stuck Volumes are Substantial
More informationNEXT GENERATION NATURAL GAS VEHICLE PROGRAM. Heavy Duty Rollout: Development of Stoichiometric Natural Gas Engines
NEXT GENERATION NATURAL GAS VEHICLE PROGRAM Heavy Duty Rollout: Development of Stoichiometric Natural Gas Engines Presented at Clean Cities Conference Fort Lauderdale, Florida Alex Lawson, Stephen Pechkoff
More informationSKYMOS MULTILAYER CHIP BEAD FEATURES APPLICATIONS ORDERING CODE
FEATURES Multilayer Chip Bead: These small size chips generating high impedance. Either flow or reflow soldering methods can be use due to electroplating of the terminal electrodes. High reliability due
More informationWorkshop on Automotive Stack Design Options, Platform Concept, and Cost Targets
AUTOSTACK Workshop Feb8 th 2011, Grenoble Workshop on Automotive Stack Design Options, Platform Concept, and Cost Targets F. Finsterwalder Daimler AG Content 1. Introduction 2. Summary of system requirements
More informationJOHANSON DIELECTRICS INC Bledsoe Street, Sylmar, Ca Phone (818) Fax (818)
Impact of Pad Design and Spacing on AC Breakdown Performance John Maxwell, Vice President of Engineering, Johanson Dielectrics Inc. Enrique Lemus, Quality Engineer, Johanson Dielectrics Inc. 15191 Bledsoe
More informationHybridCuts: A Scheme Combining Decomposition and Cutting for Packet Classification
HybridCuts: A Scheme Combining Decomposition and Cutting for Packet Classification Wenjun Li Xianfeng Li School of Electronic and Computer Engineering (ECE) Peking University IEEE Hot Interconnects 21
More informationPowerQUICC2 Pro Communications Processor MPC8313/8311 Product Family Rev. 1.0 / 2.0 / 2.1 Qualification Report
PowerQUICC2 Pro Communications Processor /8311 Product Family Rev. 1.0 / 2.0 / 2.1 Qualification Report /8311-516 Lead, 27 x 27 mm, 1mm pitch TEPBGA type 2 CVRAFF VRAFF ECVRAF EVRAF SC8311EVRAFF SC8311VRAFF
More information1 Alumina Substrate 5 External Electrode (Sn) 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO 2 ) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass)
Thick Film Chip Resistor CR Series Construction 1 Alumina Substrate 5 External Electrode (Sn) 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO 2 ) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier
More informationHigh Efficiency SiC Power Semiconductor. May 20, 2014 Toyota Motor Corporation
1 High Efficiency SiC Power Semiconductor May 20, 2014 Toyota Motor Corporation Outline 2 1.Overview of power semiconductors 2.Aim of SiC power semiconductor development 3.Steps toward SiC power semiconductor
More informationPTC Thermistor:TPM-S Series
Features 1. RoHS & Halogen-free compliant 2. Thermistor chip with lead-free tinned terminals 3. EIA size 0402,0603,0805 4. Fast and reliable response 5. Suitable for reflow soldering 6. Agency Recognition:
More informationCooling from Down Under Thermally Conductive Underfill
Cooling from Down Under Thermally Conductive Underfill 7 th European Advanced Technology Workshop on Micropackaging and Thermal Management Paul W. Hough, Larry Wang 1, 2 February 2012 Presentation Outline
More informationPackage: RN: SOT23-5 TRN: TSOT23-5 Features: P: Standard (default, lead free) C: Customized. 1uF
FEATURES Programmable Charge Current Up to 8mA No MOSFET, Sense Resistor or Blocking Diode Required Preset 4.2V Charge Voltage with ±1% Accuracy Charge Current Monitor Output for Gas Gauging Thermal Regulation
More informationDS1321 Flexible Nonvolatile Controller with Lithium Battery Monitor
19-6312; Rev 6/12 Flexible Nonvolatile Controller with Lithium Battery Monitor FEATURES Converts CMOS SRAM into nonvolatile memory Unconditionally write-protects SRAM when V CC is out of tolerance Automatically
More informationPlatinum-chip Temperature Sensors in SMD Design Type According to DIN EN 60751
Data Sheet 906125 Page 1/5 Platinum-chip Temperature Sensors in SMD Design Type According to DIN EN 60751 Design type PCS/PCF For temperatures from -50 to +150 C (-70 to +250 C) In accordance with DIN
More informationApplied Energy SOlutions
Applied Energy SOlutions Made in the U.S.A. Family of products THE POWER OF EXCELLENCE One Technology Place Caledonia, New York 14423 Tel: 585-538-4421 800-836-2132 Fax: 585-538-6345 Web: www.appliedenergysol.com
More informationNote 8. Electric Actuators
Note 8 Electric Actuators Department of Mechanical Engineering, University Of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9, Canada 1 1. Introduction In a typical closed-loop, or feedback, control
More informationRS Stock number
RS Stock number 617-0773 Description: For general purpose applications No memory effect Note: All batteries are supplied with only a residual charge and should be charged at the continuous charge rate
More informationDS1230Y/AB 256k Nonvolatile SRAM
www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
More informationCARDINAL COMPONENTS. Standby supply
CARDINAL COMPONENTS Rechargeable Solid State Energy Storage: 2µAh, 3.8V Series CCBC02 Features All Solid State Construction SMT Package and Process Lead-Free Reflow Tolerant Thousands of Recharge Cycles
More informationRev1.0 UCT V 1A Standalone Linear Li-ion Battery Charger GENERAL DESCRIPTION FEATURES APPLICATIONS
5V 1A Standalone Linear Li-ion Battery Charger GENERAL DESCRIPTION The UCT3146 is a highly integrated 5V 1A Li-ion battery linear charging management device. The UCT3146 charges a battery in three phases:
More informationMC Qualification of Kahlua II Rev. D MPC8241/8245 MOS-13 HiP4DP Rev. 1.4 Qualification Report
MC Qualification of Kahlua II MPC8241/8245 MOS-13 HiP4DP Rev. 1.4 Qualification Report Technology:MOS13 HiP4DP Package: 357PBGA/352TBGA Page 1 of 10 MPC8241/8245 Product Information: Product / Technology
More informationDT V 1A Standalone Linear Li-ion Battery Charger FEATURES GENERAL DESCRIPTION APPLICATIONS ORDER INFORMATION
GENERAL DESCRIPTION The DT7115 is a highly integrated 5V 1A Li-ion battery linear charging management device. The DT7115 charges a battery in three phases: trickle charging, constant current, and constant
More informationDESIGNING AN ELECTRIFIED VEHICLE:
DESIGNING AN ELECTRIFIED VEHICLE: How Vehicle Level Attributes Drive High Voltage Subsystem Design Dr. Daniel Kok Manager - Advanced Electrified Powertrain Systems Ford Motor Company International Conference
More informationCharge & Discharge. Ed Erny - NZ1Q August 2017
Charge & Discharge Ed Erny - NZ1Q August 2017 WMARC Mt Washington Valley, NH SPARC St Petersburg, FL Primary Batteries (disposable) Leclanché Cells Alkaline Cells Mercury Oxide Cells Zinc/Air Cells Aluminum/Air
More informationStorage-less and converter-less maximum power tracking of photovoltaic cells for a nonvolatile microprocessor
Seoul National University Storage-less and converter-less maximum power tracking of photovoltaic cells for a nonvolatile microprocessor Cong Wang, Naehyuck Chang, Y. Kim, S. Park, Yongpan Liu, Hyung Gyu
More informationMultilayer Acrylic Polymer Film Capacitors
FEATURES HIGH CAPACITANCE (UP TO 22μF) WIDE VOLTAGE & TEMPERATURE RANGE (16 ~ 100V, -55 C ~ +125 C or ±105 C) UPGRADE PERFORMANCE VS. MLCC's STABLE OVER FREQUENCY, TEMPERATURE & VOLTAGE NO PIEZO ELECTRIC
More informationEvolving Bump Chip Carrier
FUJITSU INTEGRATED MICROTECHNOLOGY LIMITED. The Bump Chip Carrier, which was developed as a small pin type, miniature, and lightweight CSP, is not only extremely small due to its characteristic structure,
More informationJet Dispensing Underfills for Stacked Die Applications
Jet Dispensing Underfills for Stacked Die Applications Steven J. Adamson Semiconductor Packaging and Assembly Product Manager Asymtek Sadamson@asymtek.com Abstract It is not uncommon to see three to five
More information1 Alumina Substrate 5 External Electrode (Sn) 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO 2 ) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass)
Thick Film Chip Resistor CR Series Construction 1 Alumina Substrate 5 External Electrode (Sn) 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO 2 ) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier
More informationBenefits of VFD for single to three phase conversion
Benefits of VFD for single to three phase conversion Agenda Differences between three phase and single phase power & effects on devices they power What is a VFD and how does it work when used for phase
More informationSolar Cell CIC Optimization and Factorization for CXBN-2. Lead Engineer: Jacob R. Wade
Solar Cell CIC Optimization and Factorization for CXBN-2 Lead Engineer: Jacob R. Wade Why? Dicing solar cells can be an effective method of optimizing surface area and packing factor on CubeSats, while
More informationLithium-ion battery systems for ABB UPS solutions Reliable, lightweight and compact UPS energy storage for critical applications
THREE-PHASE UPS SYSTEM Lithium-ion battery systems for ABB UPS solutions Reliable, lightweight and compact UPS energy storage for critical applications Lithium-ion: the choice for critical power backup
More informationEnhanced Breakdown Voltage for All-SiC Modules
Enhanced Breakdown Voltage for All-SiC Modules HINATA, Yuichiro * TANIGUCHI, Katsumi * HORI, Motohito * A B S T R A C T In recent years, SiC devices have been widespread mainly in fields that require a
More informationSolar tracker is the best solution for receiving maximum radiation.
1 Definition of problem Market Solution Introduction Block diagram Circuit diagram Components Software/Hardware used Feasibility Application Future enhancement Work distribution of project Reference Queries
More informationDT V 800mA Standalone Linear Li-ion Battery Charger FEATURES GENERAL DESCRIPTION APPLICATIONS ORDER INFORMATION
GENERAL DESCRIPTION The DT7102 is a highly integrated 5V 800mA Li-ion battery linear charging management device with standby indicator output. The DT7102 charges a battery in three phases: trickle charging,
More informationTHINERGY MEC220. Solid-State, Flexible, Rechargeable Thin-Film Micro-Energy Cell
THINERGY MEC220 Solid-State, Flexible, Rechargeable Thin-Film Micro-Energy Cell DS1013 v1.1 Preliminary Product Data Sheet Features Thin Form Factor 170 µm Thick Capacity options up to 400 µah All Solid-State
More information