64CH COMMON DRIVER FOR DOT MATRIX LCD

Size: px
Start display at page:

Download "64CH COMMON DRIVER FOR DOT MATRIX LCD"

Transcription

1 64 OON DIVE FO DOT ATIX D INTODUTION The (TQFP type: S6B2107) is an D driver SI with 64 channel outputs for dot matrix liquid crystal graphic display systems. This device provides 64 shift registers and 64 output drivers. It generates the timing signal to control the S6B0108 (64 channel segment driver TQFP type: S6B2108). The is fabricated by low power OS high voltage process technology, and is composed of the liquid crystal display system in combination with the S6B0108 (64 channel segment driver). FEATUES Dot matrix D common driver with 64 channel output 64-bit shift register at internal D driver circuit Internal timing generator circuit for dynamic display Selection of master/slave mode Applicable D duty: 1/48, 1/64, 1/96, 1/128 Power supply voltage: + 5V ± 10% D driving voltage: 8V - 17V ( - ) Interface Driver ontroller OON SEGENT Other S6B0108 PU igh voltage OS process 100QFP / 100TQFP or bare chip available 1

2 64 OON DIVE FO DOT ATIX D BOK DIAGA bit 4- evel Driver 64 bit Bi-Directional Shift egister DIO1 P S Data Shift Direction & Phase Selection ontrol ircuit DIO2 2 OS Timing Generator ircuit F K1 V SS DS1 DS2 S FS 2

3 64 OON DIVE FO DOT ATIX D 3 PIN ONFIGUATION 100 QFP VEE VDD DIO1 FS DS1 DS2 S V SS S K1 F P DIO VEE 2

4 64 OON DIVE FO DOT ATIX D PAD DIAGA (IP AYOUT FO TE 100QFP) DIO1 FS DS1 DS2 S V SS S K1 F P DIO Y (0, 0) X hip size: PAD size: Unit : µm VEE VEE There is the mark on the center of the chip. 4

5 64 OON DIVE FO DOT ATIX D PAD ENTE OODINATES (100QFP) Pad Number Pad Name oordinate Pad Number Pad Name oordinate Pad Number Pad Name oordinate X Y X Y X Y DS S VSS S K F P DI VEE VEE VDD DI FS DS

6 64 OON DIVE FO DOT ATIX D TQFP (S6B2107) S6B2107 (100 TQFP) DIO2 P F K1 S VSS S DS2 DS1 FS DIO

7 64 OON DIVE FO DOT ATIX D PAD DIAGA (IP AYOUT FO TE 100-TQFP) Y (0, 0) X hip size: 3850 X 100 PAD size: 100 X 100 Unit : µ m VEE VEE VDD 25 DIO1 FS DS1 DS2 S V SS S K1 F P DIO2 2 There is the mark S6B2107 on the center of the chip. 7

8 64 OON DIVE FO DOT ATIX D PAD ENTE OODINATES (100-TQFP) Pad Number Pad Name oordinate Pad Number Pad Name oordinate Pad Number Pad Name oordinate X Y X Y X Y S VSS S K F P DIO VEE VEE VDD DIO FS DS DS

9 64 OON DIVE FO DOT ATIX D PIN DESIPTION Table 1. Pin Description Pin Number QFP (TQFP) 28(25) 40(37) 23(20), 58(55) Symbol I/O Description V SS Power For internal logic circuit (+5V ± 10%) GND ( = 0 V) For D driver circuit 27(24), 54(51) 24(21), 57(54) 25(22), 56(53) 26(23), 55(52),,,, Power Bias supply voltage terminals to drive D. Slelect evel Non-Select evel (), () (), () and ( &, &, & ) should be connected by the same voltage. 42(39) S Input Selection of master/slave mode - aster mode (S = 1) DIO1, DIO2, 2 and is output state. - Slave mode (S = 0) S = 1 DIO1 is input state (DIO2 is output state) S = 0 DIO2 is input state (DIO1 is output state) 2 and are input state. 39(36) S Input Selection of data shift direction. S Data Shift Direction DIO DIO2 DIO DIO1 49(46) P Input Selection of shift clock (2) phase. P Shift lock (2) Phase Data shift at the rising edge of 2 Data shift at the falling edge of 2 30(27) FS Input Selection of oscillation frequency. - aster mode When the frame frequency is 70 z, the oscillation frequency should be fosc = 430kz at FS = 1( ) fosc = 215kz at FS = 0(V SS ) - Slave mode onnect to. 9

10 64 OON DIVE FO DOT ATIX D Table 1. Pin Description (ontinued) Pin Number QFP (TQFP) 31(28) 32(29) Symbol I/O Description DS1 DS2 Input Selection of display duty. - aster mode DS1 DS2 Duty 1/48 1/64 1/96 33(30) 35(32) 37(34) 1/128 - Slave mode onnect to Oscillator - aster mode: Use these terminals as shown below. f f Open External Open - Slave mode: Stop the oscillator as shown below. Open Open 44(41) 43(40) K1 Output Operating clock output for the S6B aster mode: connection to K1 and of the S6B Slave mode: open 46(43) F Output Synchronous frame signal. - aster mode: connection to F of the S6B Slave mode: open 47(44) Input/ Output 52(49) 2 Input / Output Alternating signal input for D driving. - aster mode: output state onnection to of the S6B Slave mode: input state onnection to the controller Data shift clock - aster mode: output state onnection to of the S6B Slave mode: input state onnection to shift clock terminal of the controller. 10

11 64 OON DIVE FO DOT ATIX D 29(26) 50(47) DIO1 DIO2 Input/ Output Data input/output pin of internal shift register. S DS2 DIO1 DIO2 Output Output Output Output Input Output Output Input 11

12 64 OON DIVE FO DOT ATIX D Table 1. Pin Description (ontinued) Pin Number QFP (TQFP) 22-1(19-1) (100-56) Symbol I/O Description 1-64 Output ommon signal output for D driving. Data Out V 1 V 4 V 5 V 0 34(31), 36(33) 38(35), 41(38) 45(42), 48(45) 51(48), 53(50) No connection AXIU ABSOUTE IIT haracteristic Symbol Value Unit Note Operating voltage -0.3 to +7.0 V (1) Supply voltage to +0.3 V (4) Driver supply voltage V B -0.3 to +0.3 V (1), (2) V D -0.3 to +0.3 V (3), (4) Operating temperature T OP -30 to Storage temperature T STG -55 to NOTES: 1. Based on V SS = 0V 2. Applies to input terminals and I/O terminals at high impedance. (Except (), (), () and ()) 3. Applies to (), (), () and (). 4. Voltage level: = = = =. 12

13 64 OON DIVE FO DOT ATIX D EETIA AATEISTIS D AATEISTIS ( = +5V ± 10%, V SS = 0V, - =8-17V, TA = ) haracteristic Symbol ondition in Typ ax Unit Note Input Voltage igh V I V (1) ow V I V SS Output igh V O I O = -0.4mA V (2) voltage ow V O I O = 0.4mA Input leakage current I KG V IN = -V SS µa (1) OS frequency On resistance (VDIV- i) f OS ON Operating current I DD1 Supply current I DD2 I EE Operating f op1 f = 47kΩ ± 2% f = 20pf ± 5% - = 17V oad current = ± 150µA aster mode 1/128 Duty Slave mode 1/128 Duty aster mode 1/128 Duty aster mode External clock kz KΩ ma (3) µa (4) (5) kz Frequency f op2 Slave mode NOTES: 1. Applies to input terminals FS, DS1, DS2,, S, S and P and I/O terminals DIO1, DIO2, and 2 in the input state. 2. Applies to output terminals K1, and F and I/O terminals DIO1, DIO2, and 2 in the output state. 3. This value is specified at about the current flowing through V SS. Internal oscillation circuit: f = 47kΩ, f = 20pF. Each terminal of DS1, DS2, FS, S and S is connected to and out is no load. 4. This value is specified at about the current flowing through V SS. Each terminal of DS1, DS2, FS, S, P and is connected to, and S is connected to V SS. 2,, DIO1 is external clock. 5. This value is specified at about the current flowing through. Don t connect to V D (-). 13

14 64 OON DIVE FO DOT ATIX D A AATEISTIS ( = 5V ± 10%, TA = ) aster ode (S =, P =, f = 20pF, f = 47kW) t W t W t W DIO1 (S = ) DIO2 (S = V SS ) t su t D t su t D DIO2 (S = ) DIO1 (S = V SS ) t D t DF F t D t D t F t tw1 K1 t W1 t D12 t D21 t W2 t F t 14

15 64 OON DIVE FO DOT ATIX D aster ode haracteristic Symbol in Typ ax Unit Data setup time t SU µs Data hold time t D Data delay time t D F delay time t DF -2-2 delay time t D low level width t W high level width t W K1 low level width t W ns low level width t W K1 high level width t W high level width t W K1- phase difference t D K1 phase difference t D K1, rise/fall time t /t F

16 64 OON DIVE FO DOT ATIX D Slave ode (S = V SS ) 2 (PK2 = V SS ) t F t t W1 0.7V DD 0.3 t W1 t SU t W2 t W 2 (PK2 = ) DIO1 (S = ) DIO2 (S = V SS ) Input Data t t t t D F t DIO1 (S = ) DIO2 (S = V SS ) Onput Data haracteristics Symbol in Typ ax Unit Note 2 low level width t W ns P = V SS 2 high level width t W ns P = V SS 2 low level width t W ns P = 2 high level width t W ns P = Data setup time t SU ns Data hold time t D ns Data delay time t D ns (NOTE) Output data hold time t ns 2 rise/fall time t /t F ns NOTE: onnect load = 30pF Output 30pF 16

17 64 OON DIVE FO DOT ATIX D FUTIONA DESIPTION Oscillator The Oscillator generates 2,, F of the, and K1 and of the S6B0108 by the oscillation resister and capacitor. When selecting the master/slave mode, the oscillation circuit is as following: aster ode: In the master mode, use these terminals as shown below. f f 47KΩ 20pF Internal Oscillation Open External lock External lock Open Slave ode: In the slave mode, stop the oscillator as shown below. Open Open Timing Generation ircuit It generates 2,, F, K1 and by the frequency from the oscillation circuit. Selection of aster/slave (/S) ode - When /S is, it generates 2,, F, K1 and internally. - When /S is, it operates by receiving and 2 from the master device. Frequency Selection (FS) To adjust F frequency by 70z, the oscillation frequency should be as follows: FS Oscillation Frequency f OS = 430kz f OS = 215kz In the slave mode, it is connected to. 17

18 64 OON DIVE FO DOT ATIX D Duty Selection (DS1, DS2) It provides various duty selections according to DS1 and DS2. DS1 DS2 DUTY 1/48 1/64 1/96 1/128 Data Shift & Phase Select ontrol Phase Selection It is a circuit to shift data on synchronization or rising edge, or falling edge of the 2 according to P. P Phase Selection Data shift on rising edge of 2 Data shift on falling edge of 2 Data Shift Direction Selection When /S is connected to, DIO1 and DIO2 terminal is only output. When /S is connected to V SS, it depends on the S. S S DIO1 DIO2 Direction of Data Output Output 1 64 Output Output 64 1 Input Output DIO DIO2 Output Input DIO DIO1 18

19 64 OON DIVE FO DOT ATIX D TIING DIAGA 1/48 DUTY TIING (ASTE ODE) ondition: DS1 =, DS2 =, S = (), P = K F DIO1 ( DIO2 ) 1 ( 48 ) 2 ( 47 ) ( 2 ) 48 ( 1 ) DIO2 ( DIO1 ) elation of 2 & DIO1 ( DIO2 ) 2 DIO1 ( DIO2 ) 19

20 64 OON DIVE FO DOT ATIX D 1/128 DUTY TIING (ASTE ODE) ondition: DS1 =, DS2 =, S = (), P = K F DIO1 ( DIO2 ) 1 ( 128 ) 2 ( 127 ) 127 ( 2 ) 128 ( 1 ) DIO2 ( DIO1 ) elation of 2 & DIO1 ( DIO2 ) 2 DIO1 (DIO2) 20

21 64 OON DIVE FO DOT ATIX D 1/48 DUTY TIING (SAVE ODE) ondition: P =, S = () DIO1 ( DIO2 ) 1 ( 48 ) 2 ( 47 ) 47 ( 2 ) 48 ( 1 ) DIO2 ( DIO1 ) 21

22 64 OON DIVE FO DOT ATIX D POWE DIVE IUIT / 1 / 1 V2 2 V3 To S6B / 1 V / elation of Duty & Bias Duty Bias DIV 1/48 1/8 2 = 41 1/64 1/9 2 = 51 1/96 1/11 2 = 71 1/128 1/12 2 = 81 When duty factor is 1/48, the value of 1 & 2 should satisfy. 1/(41 + 2) = 1/ kΩ, 2 = 12kΩ 22

23 64 OON DIVE FO DOT ATIX D APPIATION IUIT 1/128 duty Segment driver (S6B0108) interface circuit 15 / V2/ V3/ / S3 S2B S1B S6B0108 DB0 -DB7 STB E /W S F K1 V SS S 1 - S 64 SEG128 S 1 - S 64 / V2/ V3/ S3 S2B S6B0108 S1B DB0 -DB7 STB E /W S V SS F K1 D Panel / V2/ V3/ / / / V2/ V3/ / S3 S2B S1B S6B0108 DB0 -DB7 STB E /W S F K1 V SS S 1 - S 64 SEG1 O1 O128 S 1 - S 64 S3 S2B S6B0108 S1B DB0 -DB7 STB E /W S V SS F K1 15 S /W E 15 STB DB0 - DB7 S1B S2B S3 5 PU S FS S V SS 64 V 0/ V 1/ V 4/ V 5/ DIO1 DIO2 DS1 2 DS2 (master) P K1 F open open DIO2 2 V 0/ 64 V 1/ P V 4/ FS V 5/ DS1 (slave) KS2 V SS S K1 F S open open open open open V 0 V 1 V 2 V 3 V 4 V 5 23

80 SEGMENT DRIVER FOR DOT MATRIX LCD S6A2067

80 SEGMENT DRIVER FOR DOT MATRIX LCD S6A2067 80 SEGENT DRIVER FOR DOT ATRIX LCD INTRODUCTION The is a LCD driver lc which is fabricated by low power COS technology. Basically this lc consists of 40 x 2 bit bi-directional shift register, 40 x 2 bit

More information

80CH SEGMENT/COMMON DRIVER FOR DOT MATRIX LCD

80CH SEGMENT/COMMON DRIVER FOR DOT MATRIX LCD 80C SEGENT/COON DRIVER FOR T ATRIX CD INTRODUCTION 100 QFP KS0083/84 is a graphic type CD driver Sl which is fabricated by COS process for high voltage. In case of segment driver, can be selected 4 bit,

More information

Wuxi I-CORE Electronics Co., Ltd. AIP CH SEGMENT DRIVER FOR DOT MATRIX LCD

Wuxi I-CORE Electronics Co., Ltd. AIP CH SEGMENT DRIVER FOR DOT MATRIX LCD AIP31063 80CH SEGENT DRIVER FOR DOT ATRIX LCD 1 GENERAL DESCRIPTION The AIP31063 is a LCD driver LSl which is fabricated by low power COS technology. Basically this LSl consists of 40 2 bit bidirectional

More information

( DOC No. HX8705-B-DS ) HX8705-B

( DOC No. HX8705-B-DS ) HX8705-B ( DOC No. HX8705-B-DS ) HX8705-B 800x600CH EPD Source+Gate Driver Preliminary version 01 800x600CH EPD Source+Gate Driver Preliminary Version 01 1. General Description The HX8705-B is a 800-channel outputs

More information

( DOC No. HX8678-B-DS )

( DOC No. HX8678-B-DS ) ( DOC No. HX8678-B-DS ) Preliminary version 01 1. General Description The HX8678-B is a 480-channel outputs gate driver, which is used for driving the gate line of TFT LCD panel. It is designed for 2-level

More information

DESCRIPTION FEATURES APPLICATIONS

DESCRIPTION FEATURES APPLICATIONS DESCRIPTION is a dot matrix LCD driver IC. The bit addressable display data which is sent from a microcomputer is stored in a build-in display data RAM and generates the LCD signal. The incorporates innovative

More information

( DOC No. HX8615A-DS ) HX8615A

( DOC No. HX8615A-DS ) HX8615A ( DOC No. HX8615A-DS ) HX8615A Version 05 Mayl, 2005 Version 05 May, 2005 1. General Description The HX8615A is a 240 channel outputs gate driver used for driving the gate electrode of TFT LCD panel. It

More information

( DOC No. HX8678-A-DS ) HX8678-A

( DOC No. HX8678-A-DS ) HX8678-A ( DOC No. HX8678-A-DS ) HX8678-A Preliminary version 01 July, 2006 Preliminary Version 01 July, 2006 1. General Description The HX8678-A is a 480/320 channels output gate driver used for driving the gate

More information

LSIC1MO120E V N-channel, Enhancement-mode SiC MOSFET

LSIC1MO120E V N-channel, Enhancement-mode SiC MOSFET LSIMO2E2, 2, 2 mohm, TO-247-3L LSIMO2E2 2 N-channel, Enhancement-mode Si MOSFET RoHS Pb Product Summary haracteristics alue Unit DS 2 Typical R DS(ON) 2 mω I D ( T ) 8 A ircuit Diagram TO-247-3L Features

More information

LSIC1MO170E V N-channel, Enhancement-mode SiC MOSFET

LSIC1MO170E V N-channel, Enhancement-mode SiC MOSFET LSIMOE,, mohm, TO--L LSIMOE N-channel, Enhancement-mode Si MOSFET RoHS Pb Product Summary haracteristics alue Unit DS Typical R DS(ON) mω ( T ). A ircuit Diagram TO--L Features * * Body diode Optimized

More information

REV. 1.3 FS DS-13_EN MAY FORTUNE' Properties. Datasheet FS For wide range thermal measurement application. For Reference Only

REV. 1.3 FS DS-13_EN MAY FORTUNE' Properties. Datasheet FS For wide range thermal measurement application. For Reference Only REV. 1.3 FS9168-017-DS-13_EN MAY 2014 Datasheet FS9168-017 For wide range thermal measurement application Fortune Semiconductor Corporation 富晶電子股份有限公司 23F., No.29-5,Sec. 2, Zhongzheng E. Rd., Danshui Dist.,

More information

MITSUBISI SEMICONDUCTORS <IC> IG OTAGE 3PASE BRIDGE DRIER ABSOUTE MAXIMUM RATINGS Symbol Parameter Conditio Ratings Unit U,, WFB igh Side Floating Sup

MITSUBISI SEMICONDUCTORS <IC> IG OTAGE 3PASE BRIDGE DRIER ABSOUTE MAXIMUM RATINGS Symbol Parameter Conditio Ratings Unit U,, WFB igh Side Floating Sup MITSUBISI SEMICONDUCTORS IG OTAGE 3PASE BRIDGE DRIER DESCRIPTION is high voltage Power MOSFET and IGBT module driver for 3Phase bridge applicatio. FEATURES FOATING SUPPY OTAGE...6 OUTPUT CURRENT...±3mA

More information

MITSUBISHI SEMICONDUCTORS <HVIC> M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER M63993FP

MITSUBISHI SEMICONDUCTORS <HVIC> M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER M63993FP MITSUBISI SEMICONDUCTORS IG OTAGE 3PASE BRIDGE DRIER DESCRIPTION is high voltage Power MOSFET and IGBT module driver for 3Phase bridge applicatio. FEATURES FOATING SUPPY OTAGE...6 OUTPUT CURRENT...±3mA

More information

DS1250Y/AB 4096k Nonvolatile SRAM

DS1250Y/AB 4096k Nonvolatile SRAM 19-5647; Rev 12/10 www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM

More information

DS1230Y/AB 256k Nonvolatile SRAM

DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory

More information

Lithium-Ion Battery Charge Control IC Monolithic IC MM3358

Lithium-Ion Battery Charge Control IC Monolithic IC MM3358 Lithium-Ion Battery ontrol I Monolithic I MM3358 Outline This I is a linear charge control I for 1-cell Lithium-Ion and lithium-polymer batteries. It incorporates a power MOSFET and a reverse-current block

More information

3Phase spindle motor driver for CD-RW

3Phase spindle motor driver for CD-RW otor driver ICs BD6670F 3Phase spindle motor driver for CD-RW BD6670F BD6670F is a 3-phase spindle motor driver adopting 180 PW direct driving system. Noise occurred from the motor driver when the disc

More information

DS1250W 3.3V 4096k Nonvolatile SRAM

DS1250W 3.3V 4096k Nonvolatile SRAM 19-5648; Rev 12/10 3.3V 4096k Nonvolatile SRAM www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k

More information

Advantage Memory Corporation reserves the right to change products and specifications without notice

Advantage Memory Corporation reserves the right to change products and specifications without notice SD872-8X8-72VS4 SDRAM DIMM 8MX72 SDRAM DIMM with ECC based on 8MX8, 4B, 4K Refresh, 3.3V DRAMs with SPD GENERAL DESCRIPTION The Advantage SD872-8X8-72VS4 is a 8MX72 Synchronous Dynamic RAM high-density

More information

Crystalfontz. Thiscontrolerdatasheetwasdownloadedfrom htp:/www.crystalfontz.com/controlers/ NT TFT LCD Source Driver V0.6.

Crystalfontz. Thiscontrolerdatasheetwasdownloadedfrom htp:/www.crystalfontz.com/controlers/ NT TFT LCD Source Driver V0.6. Crystalfontz Thiscontrolerdatasheetwasdownloadedfrom htp:/www.crystalfontz.com/controlers/ NT39411 TFT LCD Source Driver V0.6 Preliminary Spec 1 Index INDEX... 2 REVISE HISTORY... 3 FEATURES... 4 GENERAL

More information

Advantage Memory Corporation reserves the right to change products and specifications without notice

Advantage Memory Corporation reserves the right to change products and specifications without notice SDRAM SODIMM 4MX64 SDRAM SO DIMM based on 4MX16, 4Banks, 4K Refresh, 3.3V DRAMs with SPD GENERAL DESCRIPTION The Advantage is a 4MX64 Synchronous Dynamic RAM high density memory module. The Advantage consists

More information

Advantage Memory Corporation reserves the right to change products and specifications without notice

Advantage Memory Corporation reserves the right to change products and specifications without notice SDRAM DIMM 32MX72 SDRAM DIMM with PLL & Register based on 32MX4, 4 Internal Banks, 4K Refresh, 3.3V DRAMs with SPD GENERAL DESCRIPTION The Advantage is a 32MX72 Synchronous Dynamic RAM high density memory

More information

XC95108 In-System Programmable CPLD

XC95108 In-System Programmable CPLD PODUCT OBSOLETE / UNDE OBSOLESCENCE 0 XC95108 In-System Programmable CPLD DS066 (v5.0) May 17, 2013 0 5 Features 7.5 ns pin-to-pin logic delays on all pins f CNT to 125 MHz 108 macrocells with 2,400 usable

More information

SPHV-C Series 200W Discrete Bidirectional TVS Diode

SPHV-C Series 200W Discrete Bidirectional TVS Diode SPHV-C Series W Discrete Bidirectional TVS Diode RoHS Pb GREEN Description The SPHV-C series is designed to replace multilayer varistors (MLVs) in portable applications, LED lighting modules, and low speed

More information

MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, CMOS, ANALOG SWITCH WITH DRIVER, MONOLITHIC SILICON

MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, CMOS, ANALOG SWITCH WITH DRIVER, MONOLITHIC SILICON INCH-POUND 4 February 2004 SUPERSEDING MIL-M-38510/116 16 April 1980 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, CMOS, ANALOG SWITCH WITH DRIVER, MONOLITHIC SILICON This specification is approved for

More information

Output Current Input Current Over Voltage. VDC VDC ma ma(typ.) ma(typ.) VDC μf % MKZI10-24S

Output Current Input Current Over Voltage. VDC VDC ma ma(typ.) ma(typ.) VDC μf % MKZI10-24S Doc. E-92 MKZI1 SERIES D/D ONVERTER 1W, Reinforced Insulation, Railway ertified FEATURES Industrial Standard 2" 1" Package Ultra-wide Input Range 9-36VD, 18-75VD, -1VD I/O Isolation 3VA with Reinforced

More information

DS1643/DS1643P Nonvolatile Timekeeping RAM

DS1643/DS1643P Nonvolatile Timekeeping RAM Nonvolatile Timekeeping RAM www.dalsemi.com FEATURES Integrated NV SRAM, real time clock, crystal, power-fail control circuit and lithium energy source Clock registers are accessed identically to the static

More information

AQHV Series 200W Discrete Unidirectional TVS Diode

AQHV Series 200W Discrete Unidirectional TVS Diode AQHV Series W Discrete Unidirectional TVS Diode RoHS Pb GREEN Description The AQHV series is designed to provide an option for very fast acting, high performance over-voltage protection devices. Ideally

More information

Revision History Revision 1.0 (August, 2003) - First release. Revision 1.1 (February, 2004) -Corrected typo.

Revision History Revision 1.0 (August, 2003) - First release. Revision 1.1 (February, 2004) -Corrected typo. stacked 1Gb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Revision History Revision 1.0 (August, 2003)

More information

TC59SM816/08/04BFT/BFTL-70,-75,-80

TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS 4 BANKS 16-BITS SYHRONOUS DYNAMIC RAM 8,388,608-WORDS 4 BANKS 8-BITS SYHRONOUS DYNAMIC RAM 16,777,216-WORDS 4 BANKS 4-BITS

More information

SM6781BV Ni-MH/Ni-Cd Battery Charger IC

SM6781BV Ni-MH/Ni-Cd Battery Charger IC Ni-MH/Ni-Cd Battery Charger IC OVERVIEW The SM6781BV is a quick charge control IC for Nickel Metal Hydride (NiMH) and Nickel-Cadmium (NiCd) rechargeable batteries. Quick charging ends in response to negative

More information

SYNCHRONOUS DRAM. 256Mb: x4, x8, x16 SDRAM 3.3V

SYNCHRONOUS DRAM. 256Mb: x4, x8, x16 SDRAM 3.3V SYNCHRONOUS DRAM 256Mb: x4, x8, x16 Features: Intel PC133 (3-3-3) compatible Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can

More information

XC95144 In-System Programmable CPLD. Features. Description. Power Management. December 4, 1998 (Version 4.0) 1 1* Product Specification

XC95144 In-System Programmable CPLD. Features. Description. Power Management. December 4, 1998 (Version 4.0) 1 1* Product Specification 查询 XC95144 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 1 XC95144 In-System Programmable CPLD December 4, 1998 (Version 4.0) 1 1* Product Specification Features 7.5 ns pin-to-pin logic delays on all pins f CNT to 111

More information

HM5436D. One Cell Lithium-ion/Polymer Battery Protection IC FEATURES GENERAL DESCRIPTION APPLICATIONS

HM5436D. One Cell Lithium-ion/Polymer Battery Protection IC FEATURES GENERAL DESCRIPTION APPLICATIONS One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTI The product is a high integration solution for lithiumion/polymer battery protection. contains advanced power MOSFET, high-accuracy

More information

TS1SSG S (TS16MSS64V6G)

TS1SSG S (TS16MSS64V6G) Description The TS1SSG10005-7S (TS16MSS64V6G) is a 16M bit x 64 Synchronous Dynamic RAM high-density memory module. The TS1SSG10005-7S (TS16MSS64V6G) consists of 4 piece of CMOS 16Mx16bits Synchronous

More information

DQ18 DQ19 VDD DQ20 NC *VREF **CKE1 VSS DQ21 DQ22 DQ23 VSS DQ24 DQ25 DQ26 DQ27 VDD DQ28 DQ29 DQ30 DQ31 VSS **CLK2 NC NC SDA SCL VDD

DQ18 DQ19 VDD DQ20 NC *VREF **CKE1 VSS DQ21 DQ22 DQ23 VSS DQ24 DQ25 DQ26 DQ27 VDD DQ28 DQ29 DQ30 DQ31 VSS **CLK2 NC NC SDA SCL VDD PIN CONFIGURATIONS (Front side/back side) Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 19 20 21 22 23 24 25 26 27 DQ8 DQ9 0 1 2 3 4 5 CB0 CB1 WE 0

More information

CHARGE SOURCE/LOAD GROUND

CHARGE SOURCE/LOAD GROUND DS2715 NiMH Battery Pack Charge Controller www.maxim-ic.com DESCRIPTION The DS2715 is well suited for cost-sensitive charger applications where the battery pack is either internal or external to the application.

More information

DS1245Y/AB 1024k Nonvolatile SRAM

DS1245Y/AB 1024k Nonvolatile SRAM www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory

More information

IS42S Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES OVERVIEW. PIN CONFIGURATIONS 54-Pin TSOP (Type II)

IS42S Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES OVERVIEW. PIN CONFIGURATIONS 54-Pin TSOP (Type II) 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM JANUARY 2008 FEATURES Clock frequency: 166, 143 MHz Fully synchronous; all signals referenced to a positive clock edge Internal bank for

More information

XB7608A. One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTION FEATURES APPLICATIONS

XB7608A. One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTION FEATURES APPLICATIONS One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTI The series product is a high integration solution for lithiumion/polymer battery protection. contains advanced power MOSFET, high-accuracy

More information

Revision History. REV. 0.1 June Revision 0.0 (May, 1999) PC133 first published.

Revision History. REV. 0.1 June Revision 0.0 (May, 1999) PC133 first published. Revision History Revision 0.0 (May, 1999) PC133 first published. Revision 0.1 (June, 1999) - Changed PCB Dimensions in PACKAGE DIMENSIONS This datasheet has been downloaded from http://www.digchip.com

More information

LSIC1MO120E V N-channel, Enhancement-mode SiC MOSFET

LSIC1MO120E V N-channel, Enhancement-mode SiC MOSFET LSIC1MO120E0160 1200 N-channel, Enhancement-mode SiC MOSFET RoHS Pb Product Summary Characteristics alue Unit DS 1200 Typical R DS(ON) 160 mω I D ( T C 100 C) 14 A Circuit Diagram TO-247-3L Features *

More information

HM9902B. One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTION APPLICATIONS FEATURES. Protection of Battery Cell Reverse.

HM9902B. One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTION APPLICATIONS FEATURES. Protection of Battery Cell Reverse. One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTI The HM9902B Series product is a high integration solution for lithiumion/polymer battery protection. HM9902B contains advanced power

More information

AQxxC Series 450W Discrete Bidirectional TVS Diode

AQxxC Series 450W Discrete Bidirectional TVS Diode AQxxC Series 5W Discrete Bidirectional TVS Diode RoHS Pb GREEN Description The bidirectional AQxxC series is designed to replace multilayer varistors (MLVs) in electronic equipment for low speed and DC

More information

Uni- and Bipolar Hall IC Switches for Magnetic Field Applications TLE 4905 L; TLE 4935 L; TLE L; TLE 4945 L; TLE L.

Uni- and Bipolar Hall IC Switches for Magnetic Field Applications TLE 4905 L; TLE 4935 L; TLE L; TLE 4945 L; TLE L. Uni- and ipolar Hall IC Switches for Magnetic Field Applications TLE 495 L; TLE 495 L; TLE 495- L; TLE 4945 L; TLE 4945-L ipolar IC Features Temperature compensated magnetic performance Digital output

More information

LET9045C. RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs. Features. Description

LET9045C. RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs. Features. Description RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT (@28 V) = 45 W with 18.5 db gain @ 960 MHz

More information

QTCT230 SERIES 2.5 x 3.2mm MINIATURE SMD TEMPERATURE CONTROLLED CRYSTAL OSCILLATORS 2.8 to 3.3Vdc MHz to 45.

QTCT230 SERIES 2.5 x 3.2mm MINIATURE SMD TEMPERATURE CONTROLLED CRYSTAL OSCILLATORS 2.8 to 3.3Vdc MHz to 45. Description Q-Tech s surface-mount QTCT230 oscillators consist of an IC 3.3Vdc TCXO built in a low profile ceramic package with gold plated contact pads. Features ECCN: EAR99 Frequency range from 10.000MHz

More information

Shrink-TSOP. M464S3323CN0 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on stsop2 16Mx8, 4Banks, 4K Refresh, 3.3V SDRAMs with SPD. Pin. Front. Pin.

Shrink-TSOP. M464S3323CN0 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on stsop2 16Mx8, 4Banks, 4K Refresh, 3.3V SDRAMs with SPD. Pin. Front. Pin. M464S3323CN0 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on stsop2 16Mx8, 4Banks, 4K Refresh, 3.3V SDRAMs with SPD GENERAL DESCRIPTION The Samsung M464S3323CN0 is a 32M bit x 64 Synchronous Dynamic RAM high

More information

IS42S32160B IS45S32160B

IS42S32160B IS45S32160B IS42S32160B IS45S32160B 16M x 32 512Mb SYNCHRONOUS DRAM DECEMBER 2009 FEATURES Clock frequency: 166, 143 MHz Fully synchronous; all signals referenced to a positive clock edge Internal bank for hiding

More information

Electronic Controls Proportional Valve Control Power Plugs

Electronic Controls Proportional Valve Control Power Plugs Electronic ontrols Proportional Valve ontrol Power Plugs EHH-AMP-70-D/J/K-* Series For use with valve types: EPV**-D-* EFV-**-0DE* ERV/**-D-* EPRV**-D-* Application Primary applications are in the control

More information

NC7SP17 TinyLogic ULP Single Buffer with Schmitt Trigger Input

NC7SP17 TinyLogic ULP Single Buffer with Schmitt Trigger Input NC7SP17 TinyLogic ULP Single Buffer with Schmitt Trigger Input Features 0.9 to 3.6 CC Supply Operation 3.6 Over-oltage Tolerant I/Os at CC from 0.9 to 3.6 Propagation Delay (t PD ): 4.0ns Typical for 3.0

More information

CHARGE CONTROLLER C C S B 2

CHARGE CONTROLLER C C S B 2 CHARGE CONTROLLER C C S 9 3 1 0 B 2 D a t a s h e e t Applications for the Computer-Charging-System: Alarm Systems, Cellular Phones, Computer, Electric Vehicles, HiFi, Hobby, Instruments, Lamps, Medical

More information

M464S1724CT1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD. Pin. Pin. Back. Front DQ53 DQ54 DQ55

M464S1724CT1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD. Pin. Pin. Back. Front DQ53 DQ54 DQ55 M464S1724CT1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M464S1724CT1 is a 16M bit x 64 Synchronous Dynamic RAM high

More information

IS42S Meg x MBIT SYNCHRONOUS DRAM SEPTEMBER 2009

IS42S Meg x MBIT SYNCHRONOUS DRAM SEPTEMBER 2009 16Meg x16 256-MBIT SYNCHRONOUS DRAM SEPTEMBER 2009 FEATURES Clock frequency: 166, 143, 133 MHz Fully synchronous; all signals referenced to a positive clock edge Internal bank for hiding row access/precharge

More information

DS2714. Quad Loose Cell NiMH Charger

DS2714. Quad Loose Cell NiMH Charger DS2714 Quad Loose Cell NiMH Charger www.maxim-ic.com GENERAL DESCRIPTION The DS2714 is ideal for standalone charging of 1 to 4 AA or AAA NiMH loose cells. NiCd cells can also be charged. Temperature, voltage

More information

256Mbit SDRAM. 8M x 8bit x 4 Banks Synchronous DRAM LVTTL. Revision 0.1 Sept. 2001

256Mbit SDRAM. 8M x 8bit x 4 Banks Synchronous DRAM LVTTL. Revision 0.1 Sept. 2001 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Revision History Revision 0.0

More information

SRS WOW AUDIO PROCESSOR

SRS WOW AUDIO PROCESSOR SS WOW AUDIO POCESSO GENEA DESCIPTION The NJM2700 is a SS WOW audio processor, based on the technology of SS abs, Inc. The NJM2700 reproduces wide and clear sound. In addition, it provides rich bass sound.

More information

SM24CANB Series 500W TVS Diode Array

SM24CANB Series 500W TVS Diode Array SM4CANB Series 5W TVS Diode Array RoHS Pb GREEN Description The SM4CANB TVS Diode Array is designed to protect automotive Controller Area Network (CAN lines from damage due to electrostatic discharge (ESD,

More information

SGM4056 High Input Voltage Charger

SGM4056 High Input Voltage Charger GENERAL DESCRIPTION The SGM456 is a cost-effective, fully integrated high input voltage single-cell Li-ion battery charger. The charger uses a CC/CV charge profile required by Li-ion battery. The charger

More information

FW250R1 and FW300R1 Power Modules: dc-dc Converters: 36 Vdc to 75 Vdc Input, 28 Vdc Output; 250 W to 300 W

FW250R1 and FW300R1 Power Modules: dc-dc Converters: 36 Vdc to 75 Vdc Input, 28 Vdc Output; 250 W to 300 W Data Sheet FW25R1 and FW3R1 Power Modules: dc-dc Converters: Features The FW25R1 and FW3R1 Power Modules use advanced, surface-mount technology and deliver high-quality, compact, dc-dc conversion at an

More information

t WR = 2 CLK A2 Notes:

t WR = 2 CLK A2 Notes: SDR SDRAM MT48LC16M4A2 4 Meg x 4 x 4 Banks MT48LC8M8A2 2 Meg x 8 x 4 Banks MT48LC4M16A2 1 Meg x 16 x 4 Banks 64Mb: x4, x8, x16 SDRAM Features Features PC100- and PC133-compliant Fully synchronous; all

More information

ST3S01PHD BATTERY CHARGE I.C.

ST3S01PHD BATTERY CHARGE I.C. BATTERY CHARGE I.C. DEDICATED I.C. FOR 1 LI-ION CELL OR 3 NI-MH CELLS 5 DIFFERENT OPERATING MODES 150 ma PRECHARGE CURRENT VERY LOW DROP CHARGE SWITCH (130mV @ 800mA) VERY LOW DROP REVERSE SWITCH (130mV

More information

SDR SDRAM. MT48LC8M8A2 2 Meg x 8 x 4 Banks MT48LC4M16A2 1 Meg x 16 x 4 Banks. Features. 64Mb: x8, x16 SDRAM. Features

SDR SDRAM. MT48LC8M8A2 2 Meg x 8 x 4 Banks MT48LC4M16A2 1 Meg x 16 x 4 Banks. Features. 64Mb: x8, x16 SDRAM. Features SDR SDRAM MT48LC8M8A2 2 Meg x 8 x 4 Banks MT48LC4M16A2 1 Meg x 16 x 4 Banks 64Mb: x8, x16 SDRAM Features Features PC100- and PC133-compliant Fully synchronous; all signals registered on positive edge of

More information

REV. 1.7 DW01x-DS-17_EN May FORTUNE' Properties. Datasheet DW01x. One Cell Lithium-ion/Polymer Battery Protection IC. For Reference Only

REV. 1.7 DW01x-DS-17_EN May FORTUNE' Properties. Datasheet DW01x. One Cell Lithium-ion/Polymer Battery Protection IC. For Reference Only REV. 1.7 DW01x-DS-17_EN May 2014 Datasheet DW01x One Cell Lithium-ion/Polymer Battery Protection IC Fortune Semiconductor Corporation 富晶電子股份有限公司 23F., No.29-5,Sec. 2, Zhongzheng E. Rd., Danshui Dist, New

More information

Notes: Clock Frequency (MHz) Target t RCD- t RP-CL t RCD (ns) t RP (ns) CL (ns) -6A E

Notes: Clock Frequency (MHz) Target t RCD- t RP-CL t RCD (ns) t RP (ns) CL (ns) -6A E SDR SDRAM MT48LC32M4A2 8 Meg x 4 x 4 Banks MT48LC16M8A2 4 Meg x 8 x 4 Banks MT48LC8M16A2 2 Meg x 16 x 4 Banks 128Mb: x4, x8, x16 SDRAM Features Features PC100- and PC133-compliant Fully synchronous; all

More information

ESMT M13S A (2K) DDR SDRAM. 4M x 16 Bit x 4 Banks Double Data Rate SDRAM. Features. Ordering Information

ESMT M13S A (2K) DDR SDRAM. 4M x 16 Bit x 4 Banks Double Data Rate SDRAM. Features. Ordering Information DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe () Differential clock inputs ( and ) DLL aligns

More information

How to Order 1 T Z A. r Pressure range. 05 Pressure range 0 to 0.5 MPa 10 Pressure range 0 to 1 MPa 16 Pressure range 0 to 1.6 MPa

How to Order 1 T Z A. r Pressure range. 05 Pressure range 0 to 0.5 MPa 10 Pressure range 0 to 1 MPa 16 Pressure range 0 to 1.6 MPa oolant Valve Series S External pilot solenoid S ir operated S How to Order 0 0 Y 0 0 T Z q w e r t y u i o!0!!!!! q Series S00 S00 S00 w Valve type ormally closed ormally open e Seal material R FKM r Pressure

More information

NC7SV08 TinyLogic ULP-A 2-Input AND Gate

NC7SV08 TinyLogic ULP-A 2-Input AND Gate NC7S08 TinyLogic ULP-A 2-Input AND Gate Features 0.9 to 3.6 CC Supply Operation 3.6 Over-oltage Tolerant I/Os at CC from 0.9 to 3.6 Extremely High Speed t PD - 1.0 ns: Typical for 2.7 to 3.6 CC - 1.2 ns:

More information

SM Series 400W TVS Diode Array

SM Series 400W TVS Diode Array General Purpose ESD Protection - SM5 through SM3 SM Series W TVS Diode Array RoHS Pb GREEN Description The SM series TVS Diode Array is designed to protect sensitive equipment from damage due to electrostatic

More information

IS42S16400J IS45S16400J

IS42S16400J IS45S16400J 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM JULY 2014 FEATURES Clock frequency: 200, 166, 143, 133 MHz Fully synchronous; all signals referenced to a positive clock edge Internal bank

More information

ACE4108 Max.2A Li-ion Switching Charger IC

ACE4108 Max.2A Li-ion Switching Charger IC Description The ACE4108 is a 2A Li-Ion battery switching charger intended for 12V. Low power dissipation, an internal MOSFET and its compact package with minimum external components requirement makes the

More information

Advanced Topics. Packaging Power Distribution I/O. ECE 261 James Morizio 1

Advanced Topics. Packaging Power Distribution I/O. ECE 261 James Morizio 1 Advanced Topics Packaging Power Distribution I/O ECE 261 James Morizio 1 Package functions Packages Electrical connection of signals and power from chip to board Little delay or distortion Mechanical connection

More information

TVS Diode Arrays (SPA Diodes) SP2502L Series 3.3V 75A Diode Array. Lightning Surge Protection - SP2502L Series. RoHS Pb GREEN.

TVS Diode Arrays (SPA Diodes) SP2502L Series 3.3V 75A Diode Array. Lightning Surge Protection - SP2502L Series. RoHS Pb GREEN. SP202L Series 3.3V 7A Diode Array RoHS Pb GREEN Description The SP202L provides overvoltage protection for applications such as 0/00/000 Base-T Ethernet and T3/ E3 interfaces. This device has a low capacitance

More information

HY2112 Datasheet. 1- Cell LiFePO4. Battery Packs Protection ICs HYCON Technology Corp. DS-HY2112-V06_EN

HY2112 Datasheet. 1- Cell LiFePO4. Battery Packs Protection ICs HYCON Technology Corp.   DS-HY2112-V06_EN Datasheet 1- Cell LiFePO4 Battery Packs Protection ICs Table of Contents 1 GENERAL DESCRIPTION 4 2 FEATURES 4 3 APPLICATIONS 4 4 BLOCK DIAGRAM 5 5 ORDERING INFORMATION 6 6 MODEL LIST 6 7 PIN CONFIGURATION

More information

OKI Semiconductor MD56V82160

OKI Semiconductor MD56V82160 4-Bank 4,194,304-Word 16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V82160-01 Issue Date:Feb.14, 2008 DESCRIPTION The is a 4-Bank 4,194,304-word 16-bit Synchronous dynamic RAM. The device operates at 3.3 V. The

More information

Nickel Cadmium and Nickel Hydride Battery Charging Applications Using the HT48R062

Nickel Cadmium and Nickel Hydride Battery Charging Applications Using the HT48R062 ickel Cadmium and ickel Hydride Battery Charging Applications Using the HT48R062 ickel Cadmium and ickel Hydride Battery Charging Applications Using the HT48R062 D/: HA0126E Introduction This application

More information

ESMT M13L32321A -7.5BG2G DDR SDRAM. 512K x 32 Bit x 2 Banks Double Data Rate SDRAM. Features. Ordering Information

ESMT M13L32321A -7.5BG2G DDR SDRAM. 512K x 32 Bit x 2 Banks Double Data Rate SDRAM. Features. Ordering Information DDR SDRAM 512K x 32 Bit x 2 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe () Differential clock inputs ( and ) DLL aligns

More information

HY2112 Datasheet. 1- Cell LiFePO4. Battery Packs Protection ICs HYCON Technology Corp. DS-HY2112-V08_EN

HY2112 Datasheet. 1- Cell LiFePO4. Battery Packs Protection ICs HYCON Technology Corp.   DS-HY2112-V08_EN Datasheet 1- Cell LiFePO4 Battery Packs Protection ICs Table of Contents 1 GENERAL DESCRIPTION 4 2 FEATURES 4 3 APPLICATIONS 4 4 BLOCK DIAGRAM 5 5 ORDERING INFORMATION 6 6 MODEL LIST 6 7 PIN CONFIGURATION

More information

Digital Automatic. Accurate Measurement of On/Off Time for b/g WLAN/WiMAX LNAs LNA ON/OFF TIME. This article compares two

Digital Automatic. Accurate Measurement of On/Off Time for b/g WLAN/WiMAX LNAs LNA ON/OFF TIME. This article compares two From November 2009 High Frequency Electronics Copyright 2009 Summit Technical Media, LLC Accurate Measurement of On/Off Time for 802.11 b/g WLAN/WiMAX LNAs By Ahmad H. Abdelmajid RFMD, Inc. Digital Automatic

More information

ICS1702. QuickSaver Charge Controller for Nickel-Cadmium and Nickel-Metal Hydride Batteries. General Description

ICS1702. QuickSaver Charge Controller for Nickel-Cadmium and Nickel-Metal Hydride Batteries. General Description QuickSaver Charge Controller for Nickel-Cadmium and Nickel-Metal Hydride Batteries General Description The ICS1702 is a CMOS device designed for the intelligent charge control of either nickel-cadmium

More information

300mA,Ultra-low noise, Small Package Ultra-Fast CMOS LDO Regulator

300mA,Ultra-low noise, Small Package Ultra-Fast CMOS LDO Regulator 2 GND Preliminary Datasheet 300mA,Ultra-low noise, Small Package Ultra-Fast CMOS LDO Regulator General Description The is designed for portable RF and wireless applications with demanding performance and

More information

SDRAM Unbuffered SODIMM. 144pin Unbuffered SODIMM based on 256Mb H-die. 54 TSOP-II/sTSOP II with Pb-Free. (RoHS compliant)

SDRAM Unbuffered SODIMM. 144pin Unbuffered SODIMM based on 256Mb H-die. 54 TSOP-II/sTSOP II with Pb-Free. (RoHS compliant) Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb H-die 54 TSOP-II/sTSOP II with Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT

More information

Analog Output Terminal

Analog Output Terminal Analog Output Terminal I/O Interface Converts Binary Data into Analog Output Data Two outputs available. High resolution of 1/6000. Conversion is possible within a range of 5% to 105% FS. High conversion

More information

MCP Stand-Alone System Load Sharing and Li-Ion / Li-Polymer Battery Charge Management Controller. Features. Applications.

MCP Stand-Alone System Load Sharing and Li-Ion / Li-Polymer Battery Charge Management Controller. Features. Applications. Stand-Alone System Load Sharing and Li-Ion / Li-Polymer Battery Charge Management Controller Features Integrated System Load Sharing and Battery Charge Management - Simultaneously Power the System and

More information

XC95288 In-System Programmable CPLD

XC95288 In-System Programmable CPLD R 0 XC95288 In-System Programmable CPLD 0 5 Product Specification Features 15 ns pin-to-pin logic delays on all pins f CNT to 95 MHz 288 macrocells with 6,400 usable gates Up to 166 user pins 5V in-system

More information

Lithium-Ion Battery Charge Control for AC Charger Monolithic IC MM1707 Series

Lithium-Ion Battery Charge Control for AC Charger Monolithic IC MM1707 Series Lithium-Ion Battery Charge Control for AC Charger Monolithic IC MM1707 Series Outline This IC is a one-cell lithium ion battery charge control IC for AC chargers. The charging current and charging can

More information

128Mb Synchronous DRAM. Features High Performance: Description. REV 1.0 May, 2001 NT5SV32M4CT NT5SV16M8CT NT5SV8M16CT

128Mb Synchronous DRAM. Features High Performance: Description. REV 1.0 May, 2001 NT5SV32M4CT NT5SV16M8CT NT5SV8M16CT Features High Performance: f Clock Frequency -7K 3 CL=2-75B, CL=3-8B, CL=2 Single Pulsed RAS Interface Fully Synchronous to Positive Clock Edge Four Banks controlled by BS0/BS1 (Bank Select) Units 133

More information

NC7SV126 TinyLogic ULP-A Buffer with Three-State Output

NC7SV126 TinyLogic ULP-A Buffer with Three-State Output NC7S126 TinyLogic ULP-A Buffer with Three-State Output Features 0.9 to 3.6 CC Supply Operation 3.6 Over-oltage Tolerant I/O s at CC from 0.9 to 3.6 Extremely High Speed tpd - 1.0 ns: Typical for 2.7 to

More information

Notes: Clock Frequency (MHz) Target t RCD- t RP-CL t RCD (ns) t RP (ns) CL (ns) -6A

Notes: Clock Frequency (MHz) Target t RCD- t RP-CL t RCD (ns) t RP (ns) CL (ns) -6A SDR SDRAM MT48LC4M32B2 1 Meg x 32 x 4 s 128Mb: x32 SDRAM Features Features PC100-compliant Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column

More information

Notes: Clock Frequency (MHz) Target t RCD- t RP-CL t RCD (ns) t RP (ns) CL (ns) A

Notes: Clock Frequency (MHz) Target t RCD- t RP-CL t RCD (ns) t RP (ns) CL (ns) A SDR SDRAM MT48LC4M32B2 1 Meg x 32 x 4 s 128Mb: x32 SDRAM Features Features PC100-compliant Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column

More information

Advanced Power Electronics Corp.

Advanced Power Electronics Corp. 300mA Low Dropout Linear Regulator with Shutdown Description The is a low dropout, positive linear regu lator with very low quiescent current. The can supply 300mA output current with low dropout voltage

More information

PT8A mA Li-ion/Polymer Battery Charger

PT8A mA Li-ion/Polymer Battery Charger Features A Constant-Current / Constant-Voltage Linear Charger for Single-Cell Li-ion/Polymer Batteries Integrated Pass Element and Current Sensor Highly-Integrated, Requiring No External FETs or Blocking

More information

Ordering Information. Row Address. Row Decoder. Buffer & Refresh Counter. Column. Address. Buffer & Refresh Counter

Ordering Information. Row Address. Row Decoder. Buffer & Refresh Counter. Column. Address. Buffer & Refresh Counter Mobile DDR SDRAM Features JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe () No DLL; to is not synchronized. Differential clock

More information

1A is compatible with the USB interface, linear battery management chip

1A is compatible with the USB interface, linear battery management chip 1A is compatible with the USB interface, linear battery management chip General Description The is a constant- current / constant- voltage charger circuit for single cell lithium-ion batteries. The device

More information

EnerChip CC CBC3150. EnerChip CC with Integrated Power Management

EnerChip CC CBC3150. EnerChip CC with Integrated Power Management EnerChip CC CBC3150 EnerChip CC with Integrated Power Management Features Power Manager with Charge Control Integrated 50µAh Thin Film Energy Storage Built-in Energy Storage Protection Temperature Compensated

More information

LM3621 Single Cell Lithium-Ion Battery Charger Controller

LM3621 Single Cell Lithium-Ion Battery Charger Controller Single Cell Lithium-Ion Battery Charger Controller General Description The is a full function constant voltage, constant current (CVCC) lithium-ion (Li+) battery charger controller. It provides 1% regulation

More information

Small size High power

Small size High power YOUR POWER TESTNG SOLUTON T8900A/E Series High Power DC Electronic Load Small size High power T8900A/E Series High Power DC Electronic Load APPLCATONS ndustry Server power supply Communication power supply

More information

CBC910 Power Manager ASIC

CBC910 Power Manager ASIC Power Manager ASIC Charge Pump and Battery Management ASIC Bare Die Features Power Manager with Charge Control Built-in Battery Protection Temperature Compensated Charge Control Adjustable Switchover Voltage

More information

DS1746/DS1746P Y2K-Compliant, Nonvolatile Timekeeping RAMs

DS1746/DS1746P Y2K-Compliant, Nonvolatile Timekeeping RAMs DS1746/DS1746P Y2K-Compliant, Nonvolatile Timekeeping RAMs FEATURES Integrated NV SRAM, Real-Time Clock, Crystal, Power-Fail Control Circuit, and Lithium Energy Source Clock Registers are Accessed Identically

More information

IS42S86400B IS42S16320B, IS45S16320B

IS42S86400B IS42S16320B, IS45S16320B IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM DECEMBER 2011 FEATURES Clock frequency: 166, 143, 133 MHz Fully synchronous; all signals referenced to a positive clock edge

More information