LC06511DMX, LC06514DMX. Battery Protection IC, OTP Function, 1-Cell Lithium-Ion Battery

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Baery Proecion IC, OTP Funcion, 1-Cell Lihium-Ion Baery Overview LC06511DMX/LC06514DMX is a proecion IC for 1 cell lihium ion or lihium polymer baery wih buil in OTP.

1 Baery Proecion IC, OTP Funcion, 1-Cell Lihium-Ion Baery Overview LC06511DMX/LC06514DMX is a proecion IC for 1 cell lihium ion or lihium polymer baery wih buil in OTP. I provides highly accurae adjusable over charge, over discharge, over curren proecion wih adjusable deecion delay by OTP. Curren is deeced by high precision exernal chip resisor. Which realizes accurae curren deecion over emperaure. Funcion Highly Accurae Deecion Volage/Curren a Ta = 25 C, = 3.8 V Over Charge Deecion Volage 4.1 V o 4.55 V (5 mv sep) Over Charge Release Hyseresis 0 V o 0.2 V (0 V, 0.1 V, 0.15 V, 0.2 V) Over Discharge Deecion Volage 2.0 V o 3.3 V (50 mv sep) Over Discharge Release Hyseresis2 0 V, 0.2 V, 0.3 V, 0.4 V Discharge Over Curren Deecion Volage1 3 mv o 70 mv (1 mv sep) Discharge Over Curren Deecion Volage2 3 mv o 70 mv (1 mv sep) Shor Curren Deecion Volage 50 mv o 150 mv (10 mv sep) Charge Over Curren Deecion Volage 70 mv o 3 mv ( 1 mv sep) Over discharge Deecion Delay Time 32 ms, 64 ms, 128 ms, 256 ms Discharge Over curren Deecion Delay Time1 8 ms, 16 ms, 2048 ms, 3482 ms 0 V Baery Charging Permi (LC06511DMX), Inhibi (LC06514DMX) Auo Wake up Funcion Baery Charging Permi This is a Pb Free Device XX M X2DFN6 1.4x1.4, 0.5P CASE 716AF MARKING DIAGRAM ORDERING INFORMATION Device Package Shipping LC06511D01MXTAG LC06514D01MXTAG 1 XXM = Specific Device Code = Monh Code = Pb Free Package (Noe: Microdo may be in eiher locaion) X2DFN6 (Pb Free) X2DFN6 (Pb Free) 4000 / Tape & Reel 4000 / Tape & Reel For informaion on ape and reel specificaions, including par orienaion and ape sizes, please refer o our Tape and Reel Packaging Specificaion Brochure, BRD8011/D. Typical Applicaions Smar Phone Table Wearable Device Semiconducor Componens Indusries, LLC, 2018 February, 2019 Rev. 3 1 Publicaion Order Number: LC06511DMX/D

2 Table 1. ABSOLUTE MAXIMUM RATINGS Parameer Symbol Condiions Raings Uni Supply volage 0.3 o 12.0 V erminal Inpu volage V 0.3 o 7 V erminal Inpu volage V 24.0 o +0.3 V erminal volage V 24.0 o +0.3 V erminal volage V 0.3 o +0.3 V Sorage emperaure Tsg 55 o +125 C Operaing ambien emperaure Topr 40 o +85 C Juncion emperaure Tj 125 C Sresses exceeding hose lised in he Maximum Raings able may damage he device. If any of hese limis are exceeded, device funcionaliy should no be assumed, damage may occur and reliabiliy may be affeced. EXAMPLE OF APPLICATION CIRCUIT Baery+ PAC+ Over curren deecion Conroller IC C1 OTP R3 Baery Sense Resisor Exernal FETs PAC Figure 1. Example of Applicaion Circui Table 2. Componens Min Recommended Value Max Uni Descripion k Baery+ is filered o by and C k Proecion from reverse of charger C F Baery+ is filered o by and C1 R m Sence resisor for over curren deecion 2

3 Table 3. ELECTRICAL CHARACTERISTI ( = 0.33 k, = 1 k, = 3.8 V (Noe 1)) Parameer Symbol Condiions Min. Typ. Max. Uni Tes Circui Deecion Volage Over charge deecion volage Vov =0.33kΩ Ta=25 C Vov_se 10 Vov_se Vov_se +10 mv B Vov_se 15 Vov_se Vov_se +15 Over charge release volage Vovr1 =0.33kΩ <Vcocr& =0V Over discharge deecion volage Over discharge release volage1 Over discharge release volage2 Discharge over curren deecion volage (primary proecion) Discharge over curren deecion volage2 (secondary proecion) Discharge over curren deecion volage (Shor circui) Dicharge over curren(shor circui) release volage Charge over curren deecion volage Charge over curren release volage Inpu Volage 0 V Baery Charge Permission Charger Volage (LC06511DMX) 0 V Baery Charging Inhibiion Baery Volage (LC06514DMX) Vovr2 =0.33kΩ >Vcocr& =0V Ta=25 C Vovr_se 30 Vovr_se Vovr_se +30 mv B Vovr_se 55 Vovr_se Vovr_se +40 Ta=25 C Vov_se 15 Vov_se Vov_se +10 mv I Vov_se 20 Vov_se Vov_se +15 Vuv =0.33kΩ Ta=25 C Vuv_se 35 Vuv_se Vuv_se +35 mv B Vuvr1 Vuvr2 Vdoc1 Vdoc2 Vshr Vdocr Vcoc Vcocr Vchg =0.33kΩ = 0 V =0.33kΩ =OPEN =1kΩ =3.8V =1kΩ =3.8V =1kΩ =3.8V =1kΩ =3.8V =0V =1kΩ =3.8V =1kΩ =3.8V =0V = = 0 V Curren Consumpion Operaing curren Icc A normal sae Sand by curren Isb A sand by Sae Vuv_se 55 Vuv_se Vuv_se +55 Ta = 25 C Vuv_se 35 Vuv_se Vuv_se + 50 mv B Ta = 20 o Vuv_se 55 Vuv_se Vuv_se + 80 Ta=25 C Vuvr_se 100 Vuvr_se Vuvr_se +100 mv D Vuvr_se 110 Vuvr_se Vuvr_se +110 Ta=25 C Vdoc1_se 1.0 Vdoc1_se Vdoc1_se+1.0 mv F Vdoc1_se 1.8 Vdoc1_se Vdoc1_se+1.8 Ta=25 C Vdoc2_se 1.0 Vdoc2_se Vdoc2_se+1.0 mv F Vdoc2_se 1.8 Vdoc2_se Vdoc2_se+1.8 Ta=25 C Vshr_se 10 Vshr_se Vshr_se+10 mv F Vshr_se 12 Vshr_se Vshr_se+12 Ta=25 C V A Ta=25 C Vcoc_se 1.0 Vcoc_se Vcoc_se+1.0 mv F Vcoc_se 1.8 Vcoc_se Vcoc_se+1.8 Ta=25 C V A Ta=25 C 1.4 V A Vinh = 4 V Ta=25 C V A Auo wake up =enable Ta=25 C =3.8V Ta=25 C =2.0V 3 6 A J 0.95 A J 3

4 Table 3. ELECTRICAL CHARACTERISTI ( = 0.33 k, = 1 k, = 3.8 V (Noe 1)) Parameer Symbol Resisance Inernal resisance ( ) Rvmu =2.0V =0V Inernal resisance ( ) Rvmd =3.8V =0.1V oupu resisance (High) Rcoh =3.8V =3.3V =0V oupu resisance (Low) Rcol =4.5V =0.5V =0V oupu resisance (High) Rdoh =3.8V =3.3V =0V oupu resisance (Low) Rdol =2.0V =0V =0.5V Deecion and Release Delay Time Over charge deecion delay Tov ime =3V o 4.5V ==0V Over charge release delay ime Tovr =4.5V o 3V ==0V Over discharge deecion delay ime Over discharge release delay ime Discharge over curren deecion delay ime 1 Discharge over curren deecion delay ime 2 Discharge over curren release delay ime Shor curren deecion delay ime Charge Over curren deecion delay ime Charge Over curren release delay ime Tuv Tuvr Tdoc1 Tdoc2 Tdocr Tshr Tcoc Tcocr =3V o 2V ==0V =2V o 3V ==0V =0V o Vdoc1MAX =0V =0V o Vdoc2MAX =0V =3.8V o 2.65V =0V =0V o VshrMAX =0 =0V o VcocMIN =0 =0V o VcocrMAX =0V Condiions Min. Typ. Max. Uni Tes Circui Ta=25 C kω E Ta=25 C kω E Ta=25 C kω H Ta=25 C kω H Ta=25 C kω G Ta=25 C kω G Ta=25 C ms B Ta=25 C ms B Ta=25 C Tuv_se*0.8 Tuv_se Tuv_se*1.2 ms B Tuv_se*0.65 Tuv_se Tuv_se*1.35 Ta=25 C ms B Ta=25 C Tdoc1_se*0.8 Tdoc1_se Tdoc1_se*1.2 ms F Tdoc1_se*0.7 Tdoc1_se Tdoc1_se*1.3 Ta=25 C ms F Ta=25 C ms A Ta=25 C s F Ta=25 C ms F Ta=25 C ms F Produc parameric performance is indicaed in he Elecrical Characerisics for he lised es condiions, unless oherwise noed. Produc performance may no be indicaed by he Elecrical Characerisics if operaed under differen condiions. 1. The specificaions in high emperaure and low emperaure are guaraneed by design. 4

5 5 TEST CIRCUITS Figure 2. Tes Circuis A V A V V A B C D E F G H I J V V A A V

6 Table 4. ADJUSTABLE PARAMETERS Parameer Uni Range Typical Value Seing Guide Vov mv 4100 ~ mv sep Vovr mv Vov Vovr_Hy Vovr_Hy: 0,100,150,200 (4 seps) Vuv mv 2000 ~ mv sep Vuvr2 mv Vuv+Vuvr2_Hy Vuvr2_Hy: 0, 200, 300, 400 (4 seps) Vdoc1 mv 3 ~ 70 1 mv sep Vdoc2 mv 3 ~ 70 1 mv sep Vshr mv 50 ~ mv sep Vcoc mv 70 ~ 3 1 mv sep Parameer Uni Typical Value Seing Guide Tuv ms 32, 64, 128, 256 Tdoc1 ms 8, 16, 2048, 3482 Table 5. SELECTION GUIDE Device Vov (mv) Vovr2 (mv) Vuv (mv) Vuvr2 (mv) Vdoc1 (mv) Vdoc2 (mv) Vshr (mv) Vcoc (mv) Tuv (ms) Tdoc1 (ms) LC06511D01MXTAG LC06514D01MXTAG

7 Table 6. PIN FUNCTION Pin No. Symbol Pin Funcion 1 erminal 2 erminal 3 Over curren deecion inpu erminal 4 Charger negaive volage inpu erminal 5 Charge FET conrol erminal 6 Discharge FET conrol erminal BLOCK DIAGRAM 2 Power Conrol OSC Conrol Circui Level Shifer Rvmu 4 Over discharge Deecor Shor curren Deecor Rvmd 1.2V Discharge Over curren Deecor 1 Over charge Deecor Disharge Over curren Deecor 2 Comp for Vdocr Charge Over curren Deecor OTP Comp for Vcocr Figure 3. Block Diagram 7

8 DESCRIPTION OF OPERATION The baery volage is deeced beween pin and pin and he baery curren is deeced beween pin and pin. 1. Normal sae volage is beween over discharge deecion volage (Vuv), over charge deecion volage (Vov), and volage is beween charge over curren deecion volage (Vcoc), discharge over curren deecion volage (Vdoc), and volage is lower han dicharge over curren (shor) release volage (Vdocr). This is he normal sae. Boh and are high level oupu. Charge and discharge is allowed. 2. Over charging sae volage is higher han or equal o over charge deecion volage (Vov) for longer han over charge deecion delay ime (Tov). This is he over charging sae, is low level oupu. Charge is prohibied. Release from over charging sae 1 volage is lower han charge over curren (shor) release volage (Vcocr). Then volage is lower han over charge release volage1 (Vovr1) for longer han over charging release delay ime (Tovr). Release from over charging sae 2 volage is higher han charge over curren (shor) release volage (Vcocr). Then volage is lower han over charge release volage2 (Vovr2) for longer han over charge release delay ime (Tovr). 3. Over discharging sae volage is lower han over discharge deecion volage (Vuv) for longer han over discharge delay ime (Tuv). This is he over discharging sae, is low level oupu. Discharge is prohibied. During over discharging sae, pin is pulled up o Vcc by inernal resisor (Rvmu) and circuis are shu down. The low power consumpion is kep. Release from Over discharging sae 1 Charger is conneced, hen volage goes higher han over discharge release volage1 (Vuvr1) for longer han over charge release delay ime (Tuvr). Release from over discharging sae (wih auo wake up feaure) 2 volage is higher han over discharge release volage2 (Vuvr1) wihou charger for longer han over charge release delay ime (Tovr). 4. Discharging over curren sae Discharge over curren deecion 1 erminal is higher han or equal o discharge over curren deecion volage (Vdoc1) for longer han discharge over curren deecion delay ime (Tdoc1). is low level oupu. Discharge is prohibied. Discharge over curren deecion 2 erminal is higher han or equal o discharge over curren deecion volage2 (Vdoc2) for longer han discharge over curren deecion delay ime 2 (Tdoc2). is low level oupu. Discharge is prohibied. Discharge over curren deecion (Shor circui) erminal is higher han or equal o discharge over curren deecion volage (Shor circui) (Vshr) for longer han shor curren deecion delay ime (Tshr). is low level oupu. Dischaege is prohibied. During discharging over curren sae, pin is pulled down o Vss by inernal resisor (Rvmd). Release from discharging over curren sae volage goes lower han discharge over curren deecion volage (Vdoc1) and volage goes lower han discharge over curren (shor) release volage (Vdocr) for longer han discharge over curren release delay ime (Tdocr). 5. Charging over curren sae volage goes lower han or equal o charge over curren deecion volage (Vcoc) for longer han charge over curren deecion delay ime (Tcoc). This is he charging over curren sae, is low level oupu. Charge is prohibied. Release from charging over curren sae volage goes lower han charge over curren deecion volage (Vcoc) and volage goes lower han charge over curren release volage (Vcocr) for longer han discharge over curren release delay ime (Tcocr) V baery charging (LC06511DMX) When he Baery volage is lower han or equal o 0V baery charge permission volage (Vchg), charge is allowed if charger volage is higher han or equal 0V baery charge permission volage (Vchg). is fixed by he volage V Baery Proecion Funcion (LC06514DMX) This funcion proecs he baery when a shor circui in he baery (0 V baery) is deeced, a which poin charging will be prohibied. When he volage of a baery is below 0 V baery charging inhibiion baery volage (Vinh), is low level oupu. Charge is prohibied. 8

9 Over Charge Volage and Charge Over Curren TIMING CHARTS Charger Load Charger Load Charger Load Vov Vovr Vshr Vdoc2 Vdoc1 Vcoc Vcocr Tov Tov Tovr Tcoc Tcocr Tovr Icharge 0 Idischarge Figure 4. Over Charge Volage and Charge Over Curren 9

10 Over Discharge Deecion and Release (wih/wihou Charger) Load Charger Load Vuvr2 Vuvr1 Vuv Vshr Vdoc2 Vdoc1 Vcoc Tuv Tuvr Tuvr Tuv Icharge 0 Idischarge Figure 5. Over Discharge Deecion and Release (wih/wihou Charger) 10

11 Discharge Over Curren and Shor Curren Deecion and Release Load Charger Load Charger Shor circui Charger Vshr Vdoc2 Vdoc1 Vcoc Tdoc1 Tdoc2 Tshr Tdocr Tdocr Tdocr Icharge 0 Idischarge Figure 6. Discharge Over Curren and Shor Curren Deecion and Release 11

12 CHARACTERISTI OF LC06511D01MX (TYPICAL DATA) (1) Curren Consumpion and Proecion Deecion Volage Icc [ua] Icc Vov [mv] Vov Vuv [mv] Vuv VC1 [mv] VC Vshr Vcoc Vshr [mv] Vcoc [mv] Figure 7. Curren Consumpion and Proecion Deecion Volage 12

13 (2) Proecion Deecion Delay Time Tov [ms] Tov Tuv [ms] Tuv Tdoc1 [ms] Tdoc Tshr [us] Tshr Tcoc [ms] Tcoc Figure 8. Proecion Deecion Delay Time 13

14 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 1 SCALE 4:1 X2DFN6 1.4x1.4, 0.5P CASE 716AF ISSUE A DATE 11 MAY 2018 PIN ONE REFERENCE NOTE C 0.05 C DETAIL A K D ÉÉ TOP VIEW DETAIL B SIDE VIEW 6 D e BOTTOM VIEW A B E A C SEATING PLANE 6X L E2 6X b 0.10 M C A B NOTE 3 REMMENDED SOLDERING FOOTPRINT* X 0.50 A3 PLATED SURFACE DETAIL B A1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, NTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.10 AND 0.20 mm FROM THE TERMINAL TIP. 4. PLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. XX M MILLIMETERS DIM MIN NOM MAX A A A REF b D D E E e 0.50 BSC K 0.25 REF L GENERIC MARKING DIAGRAM* XXM = Specific Device Code = Monh Code = Pb Free Package (Noe: Microdo may be in eiher locaion) *This informaion is generic. Please refer o device daa shee for acual par marking. Pb Free indicaor, G or microdo, may or may no be presen. Some producs may no follow he Generic Marking PITCH 6X 0.20 DIMENSIONS: MILLIMETERS *For addiional informaion on our Pb Free sraegy and soldering deails, please download he ON Semiconducor Soldering and Mouning Techniques Reference Manual, SOLDERRM/D. CUMENT NUMBER: DESCRIPTION: 98AON79890G X2DFN6 1.4x1.4, 0.5P Elecronic versions are unconrolled excep when accessed direcly from he Documen Reposiory. Prined versions are unconrolled excep when samped NTROLLED PY in red. PAGE 1 OF 1 ON Semiconducor and are rademarks of Semiconducor Componens Indusries, LLC dba ON Semiconducor or is subsidiaries in he Unied Saes and/or oher counries. ON Semiconducor reserves he righ o make changes wihou furher noice o any producs herein. ON Semiconducor makes no warrany, represenaion or guaranee regarding he suiabiliy of is producs for any paricular purpose, nor does ON Semiconducor assume any liabiliy arising ou of he applicaion or use of any produc or circui, and specifically disclaims any and all liabiliy, including wihou limiaion special, consequenial or incidenal damages. ON Semiconducor does no convey any license under is paen righs nor he righs of ohers. Semiconducor Componens Indusries, LLC, 2018

15 ON Semiconducor and are rademarks of Semiconducor Componens Indusries, LLC dba ON Semiconducor or is subsidiaries in he Unied Saes and/or oher counries. ON Semiconducor owns he righs o a number of paens, rademarks, copyrighs, rade secres, and oher inellecual propery. A lising of ON Semiconducor s produc/paen coverage may be accessed a /sie/pdf/paen Marking.pdf. ON Semiconducor reserves he righ o make changes wihou furher noice o any producs herein. ON Semiconducor makes no warrany, represenaion or guaranee regarding he suiabiliy of is producs for any paricular purpose, nor does ON Semiconducor assume any liabiliy arising ou of he applicaion or use of any produc or circui, and specifically disclaims any and all liabiliy, including wihou limiaion special, consequenial or incidenal damages. Buyer is responsible for is producs and applicaions using ON Semiconducor producs, including compliance wih all laws, regulaions and safey requiremens or sandards, regardless of any suppor or applicaions informaion provided by ON Semiconducor. Typical parameers which may be provided in ON Semiconducor daa shees and/or specificaions can and do vary in differen applicaions and acual performance may vary over ime. All operaing parameers, including Typicals mus be validaed for each cusomer applicaion by cusomer s echnical expers. ON Semiconducor does no convey any license under is paen righs nor he righs of ohers. ON Semiconducor producs are no designed, inended, or auhorized for use as a criical componen in life suppor sysems or any FDA Class 3 medical devices or medical devices wih a same or similar classificaion in a foreign jurisdicion or any devices inended for implanaion in he human body. Should Buyer purchase or use ON Semiconducor producs for any such uninended or unauhorized applicaion, Buyer shall indemnify and hold ON Semiconducor and is officers, employees, subsidiaries, affiliaes, and disribuors harmless agains all claims, coss, damages, and expenses, and reasonable aorney fees arising ou of, direcly or indirecly, any claim of personal injury or deah associaed wih such uninended or unauhorized use, even if such claim alleges ha ON Semiconducor was negligen regarding he design or manufacure of he par. ON Semiconducor is an Equal Opporuniy/Affirmaive Acion Employer. This lieraure is subjec o all applicable copyrigh laws and is no for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Lieraure Disribuion Cener for ON Semiconducor E. 32nd Pkwy, Aurora, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderli@onsemi.com N. American Technical Suppor: Toll Free USA/Canada Europe, Middle Eas and Africa Technical Suppor: Phone: ON Semiconducor Websie: Order Lieraure: hp:///orderli For addiional informaion, please conac your local Sales Represenaive

H Pin Voltage Surveillance with Time-out. Features. Typical Operating Configuration. Description. Pin Assignment. Applications.

H Pin Voltage Surveillance with Time-out. Features. Typical Operating Configuration. Description. Pin Assignment. Applications. EM MICELECTNIC-MIN S -Pin olage Surveillance wih Time-ou Feaures Proper microprocess resar afer power up Process rese a power down n-chip oscilla gives a ypical P of 60 ms ese oupu wking down o.6 No exernal