MITSUBISHI SEMICONDUCTORS <HVIC> M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER M63993FP

Transcription

1 MITSUBISI SEMICONDUCTORS <IC> IG OTAGE 3PASE BRIDGE DRIER DESCRIPTION is high voltage Power MOSFET and IGBT module driver for 3Phase bridge applicatio. FEATURES FOATING SUPPY OTAGE...6 OUTPUT CURRENT...±3mA 3PASE BRIDGE DRIER SSOP-36 APPICATIONS MOSFET and IGBT inverter module driver for refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose. PIN CONFIGURATION (TOP IEW) UFS 1 UPO 2 UFB 3 NC 4 NC 5 NC 6 NC 7 NC 8 FS PO FB NC NC NC NC WFS WPO WFB GND COUT CIN2 CIN1 NC DD UPIN UNIN PIN NIN WPIN WNIN GND PGND WNO NO UNO CC NC:NO CONNECTION PACKAGE TYPE 36P2R BOCK DIAGRAM UFB DD INPUT RESISTOR is 5kΩ INTER OCK S Q R S Q R UPO UPIN ONE SOT PUSE + 1µs UFS UNIN DD/CC EE SIFT CC UNO PIN NIN WPIN WNIN same as U Phase same as U Phase PGND FB PO FS NO WFB WPO WFS WNO CIN1 CIN2 TRESOD:.1 DD () + 1.5µs TRESOD:.5 DD () + 7.5µs COUT GND Sep. 2

2 MITSUBISI SEMICONDUCTORS <IC> IG OTAGE 3PASE BRIDGE DRIER ABSOUTE MAXIMUM RATINGS Symbol Parameter Conditio Ratings Unit U,, WFB igh Side Floating Supply oltage.5~624 U,, WFS B 24 ~ B+.5 U,, WPO CC U,, WNO DD IN ds/dt Pt K q Rth(j-c) Tj Topr Tstg igh Side Floating Supply Offset oltage igh Side Output oltage ow Side Fixed Supply oltage ow Side Output oltage ogic Supply oltage ogic Input oltage Allowable Offset Supply oltage Traient Package Power Dissipation inear Derating Factor Junction Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature U,, WPI N, U,, WNI N Ta = 25 C, On Board Ta > 25 C, On Board S.5 ~ B+.5.5 ~ 24.5 ~ CC+.5.5 ~ 7.5 ~ DD+.5 ± ~ ~ 1 4 ~ 125 / W mw/ C C/W C C C RECOMMENDED OPERATING CONDITIONS Symbol U,, WFB U,, WFS CC DD IN PGND Parameter igh Side Floating Supply oltage igh Side Floating Supply Offset oltage ow Side Fixed Supply oltage ogic Supply oltage ogic Input oltage Output GND oltage Test Conditio U,, WPI N, U,, WNI N imits Min. Typ. Max. S S DD 5 Unit FUNCTION TABE 1 (INPUT, OUTPUT and U) U,, WPIN U,, WNIN U U,, WPO U,, WNO Behavioral state X X Normal OFF NO ON PO ON PO = OFF, NO = OFF, PIN = NIN = simultaneously PO OFF, B U tripped NO ON, B U tripped Note : state of B U mean that U trip voltage. FUNCTION TABE 2 (COMPARATOR) CIN1 X CIN2 X COUT COUT is normal IG Behavioral state Sep. 2

3 MITSUBISI SEMICONDUCTORS <IC> IG OTAGE 3PASE BRIDGE DRIER EECTRICA CARACTERISTICS (Ta=25 C, CC=BS=15, DD=5 unless otherwise specified) Symbol IFS IBS ICC IDD O O I I II II UT UR tu IO IO td(o) td(o) tr(o) tf(o) td(o) td(o) tr(o) tf(o) CIN1th tcin1 CIN2th tcin2 CO CO Parameter Floating Supply eakage Current BS standby Current CC standby Current DD standby Current igh evel Output oltage ow evel Output oltage igh evel Input Threshold oltage ow evel Input Threshold oltage igh evel Input Bias Current ow evel Input Bias Current BS Supply U Trip oltage BS Supply U Reset oltage BS Supply U Filter Time Output igh evel Short Circuit Pulsed Current Output ow evel Short Circuit Pulsed Current igh Side Turn-On Propagation Delay igh Side Turn-Off Propagation Delay igh Side Turn-On Rise Time igh Side Turn-Off Fall Time ow Side Turn-On Propagation Delay ow Side Turn-Off Propagation Delay ow Side Turn-On Rise Time ow Side Turn-Off Fall Time Comparator 1 Threshold oltage Comparator 1 Filter Time Comparator 2 Threshold oltage Comparator 2 Filter Time Comparator evel Output oltage Comparator evel Output oltage Test conditio B=S=6 per 1 phase IO=A, NO, PO IO=A, NO, PO PIN, NIN PIN, NIN PIN, NIN=5 PIN, NIN= PO NO=, PIN, NIN=5,PW<1µs PO NO=15, PIN, NIN=,PW<1µs C=1pF between O S C=1pF between O S C=1pF between O S C=1pF between O S C=1pF between O GND C=1pF between O GND C=1pF between O GND C=1pF between O GND DD=5 DD=5 ICO=5µA ICO= 5µA imits Min. Typ. Max Unit µa ma ma ma µa µa µs ma ma µs µs Sep. 2

4 MITSUBISI SEMICONDUCTORS <IC> IG OTAGE 3PASE BRIDGE DRIER EAD DEFINITIONS ead symbol UFS, FS, WFS UPO, PO, WPO UFB, FB, WFB CC UNO, NO, WNO PGND UNIN, NIN, WNIN UPIN, PIN, WPIN DD CIN1 CIN2 COUT igh Side floating supply (minus side) igh side gate drive output igh Side floating supply (plus side) ow side supply ow side gate drive output ow side power ground ogic input for low side gate driver output (O) ogic input for high side gate driver output (O) ogic supply Input for comparator 1 Input for comparator 2 Comparator output Description TIMING DIAGRAM 1. Input/Output Timing Diagram PIN NIN PO NO 2. BS Supply Undervoltage ockout Timing Diagram 1 BS BSUT tbsu BSUR PO PIN 1: BS= FB- FS Sep. 2

5 MITSUBISI SEMICONDUCTORS <IC> IG OTAGE 3PASE BRIDGE DRIER PERFORMANCE CURES IFS (µa) IFS vs. Temperature IBS vs. Temperature IBS (ma) I, I vs. Temperature 1. IDD vs. Temperature I, I () I I IDD (ma) BSUT, BSUR vs. Temperature 3 II vs. Temperature BSUT, BSUR () BSUR BSUT II (µa) Sep. 2

6 MITSUBISI SEMICONDUCTORS <IC> IG OTAGE 3PASE BRIDGE DRIER IO, IO (ma) IO, IO vs. Temperature IO IO IO, IO vs. oltage IO, IO (ma) IO IO FB, CC () 4 RO vs. Temperature 4 RO vs. oltage RO (Ω) RO (Ω) FB, CC () 6 RO vs. Temperature 6 RO vs. oltage RO (Ω) 3 RO (Ω) FB, CC () Sep. 2

7 MITSUBISI SEMICONDUCTORS <IC> IG OTAGE 3PASE BRIDGE DRIER 45 td, td vs. Temperature 45 td vs. oltage 4 4 td, td () 35 3 td (O) td (O) td (O) td (O) td () 35 3 td (O) td (O) td (O) td (O) FB, CC () Power oss (mw) Power oss (3Phase operation mode) vs. Frequency 1 FB=CC=15, DD=5, C=1pF S=3 S=4 S=1 S=2 Power oss (mw) Power oss (3Phase operation mode) vs. Frequency (=) FB=CC=15 DD=5 C=1pF C=1pF C=pF Frequency (kz) Frequency (kz) Sep. 2

8 MITSUBISI SEMICONDUCTORS <IC> IG OTAGE 3PASE BRIDGE DRIER.6 CIN1th vs. Temperature.6 CIN1th vs. oltage CIN1th ().5 CIN1th () DD () 3. CIN2th vs. Temperature 3. CIN1th vs. oltage CIN2th () CIN1th () DD () 3. tcin1 vs. Temperature 3. tcin1 vs. oltage tcin1 (µs) tcin1 (µs) DD () Sep. 2

9 MITSUBISI SEMICONDUCTORS <IC> IG OTAGE 3PASE BRIDGE DRIER 15. tcin2 vs. Temperature 15. tcin2 vs. oltage tcin2 (µs) tcin2 (µs) DD () 6. CO vs. Temperature 6. CO vs. oltage CO () 5. CO () DD ().18 CO vs. Temperature.18 CO vs. oltage CO ().1.8 CO () DD () Sep. 2

10 MITSUBISI SEMICONDUCTORS <IC> IG OTAGE 3PASE BRIDGE DRIER Thermal Derating Factor Characteristics 2. Power Dissipation Pt (W) Ambient Temperature Ta ( C) PACKAGE OUTINE 36P2R-D EIAJ Package Code SSOP36-P JEDEC Code Weight(g).53 ead Material Cu Alloy Plastic 36pin 45mil SSOP e b E E e1 I2 F Recommended Mount Pad e 1 D y b 18 1 A A2 A1 c Detail F Dimeion in Millimeters Min Nom Max b2.5 Symbol A A1 A2 b c D E e E 1 y e1 I Sep. 2