LI-ON SMICONDUCOR 0640L thru 3100L SURFAC MOUN HYRISOR SURG PROCIV DVIC Bi-Directional VDRM - 58 to 275 Volts IPP - 50 Amperes FAURS Bidirectional protection in a single device High off state Impedance and low on state voltage Surge capabilities up to 50A @10/1000us or 150A @8/20us Low Capacitance Plastic material has UL flammability classification 94V-0 Qualified to AC-Q101 Rev_C DO-219 MCHANICAL DAA Case : Molded plastic Polarity : Denotes none cathode band MAXIMUM RAINGS CHARACRISICS SYMBOL VALU UNI Non-repetitive peak impulse current @ 10/1000us IPP 50 A Junction temperature range J -40 to +150 storage temperature range SG -55 to +150 HRMAL RSISANC CHARACRISICS SYMBOL VALU UNI Junction to leads Rth(J-L) 15 /W Junction to ambient on print circuit (on recommended pad layout) Rth(J-A) 95 /W ypical positive temperature coefficient for brekdown voltage VBR/ J 0.1 %/ MAXIMUM RAD SURG WAVFORM WAVFORM SANDARD IPP (A) 2/10 us GR-1089-COR 150 8/20 us IC 61000-4-5 150 10/160 us FCC Part 68 90 10/560 us FCC Part 68 60 10/700 us IU- K20/K21 60 10/1000 us GR-1089-COR 50 IPP, PAK PULS CURRN (%) 100 50 0 tr tp Peak value (Ipp) Half value IM tr= rise time to peak value tp= Decay time to half value RV. 0, Nov-2017, KSWF01
LCRICAL CHARACRISICS @ A= 25 unless otherwise specified 0640L thru 3100L PARAMR RAD RPIIV OFF-SA OFF-SA LAKAG CURRN @ VDRM BRAKOVR ON-SA @ I=1A BRAKOVR CURRN HOLDING CURRN OFF-SA CAPACIANC SYMBOL VDRM IDRM VBO V IBO IH Co UNIS Volts ua Volts Volts ma ma pf LIMI Max Max Max Max Min Max Min Max yp 0640L 58 5 77 3.5 50 800 150 800 100 0720L 65 5 88 3.5 50 800 150 800 100 0900L 75 5 98 3.5 50 800 150 800 100 1100L 90 5 130 3.5 50 800 150 800 60 1300L 120 5 160 3.5 50 800 150 800 60 1500L 140 5 180 3.5 50 800 150 800 60 1800L 170 5 220 3.5 50 800 150 800 60 2300L 190 5 265 3.5 50 800 150 800 40 2600L 220 5 300 3.5 50 800 150 800 40 3100L 275 5 350 3.5 50 800 150 800 40 SYMBOL PARAMR I VDRM IDRM VBR Stand-off Voltage Leakage current at stand-off voltage Breakdown voltage IPP IBO IBR Breakdown current VBO Breakover voltage IBO Breakover current IH Holding current Note: 1 IBR IDRM IH V VDRM VBR VBO V V IPP On state voltage Peak pulse current CO Off state capacitance Note: 2 NOS: 1. IH > (VL/RL) If this criterion is not obeyed, the SPD riggers but does not return correctly to high-resistance state. he Surge recovery time does not exceed 30ms. 2. Off-state capacitance measured at f=1.0mhz; 1.0VRMS signal; VR=2VDC bias.
RAING AND CHARACRISICS CURVS 0640L thru 3100L IDRM,O FF S A CURR N(u A) FIG.1-OFF SA CURRN VS JUNCION MPRAUR 100.000 10.000 1.000 VDRM=50V 0.100 0.010 NORMALIZD BRAKDOWN FIG.2-RLAIV VARIAION OF BRAKDOWN VS JUNCION MPRAUR 1.20 1.15 1.10 1.05 1.00 0.95 VBR(J) VBR(J=25 ) 0.001-25 0 25 50 75 100 125 150 0.90-50 -25 0 25 50 75 100 125 150 175 1.10 FIG.3-RLAIV VARIAION OF BRAKDOWN VS JUNCION MPRAUR 100 FIG.4-ON SA CURRN VS ON SA NO RM A L IZ D B R A K DO W N V O L A G 2.0 1.05 1.00 0.95 J, J U N C I O N -50-25 0 25 50 75 100 125 150 175 M P R A U R VBO(J) VBO(J=25 ) FIG.5-RLAIV VARIAION OF HOLDING CURRN VS JUNCION MPRAUR I, O N S A CURR N 1.0 10 j=25 1 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 V, ON SA FIG.6-RLAIV VARIAION OF JUNCION CAPACIANC VS RVRS BIAS NORMALIZD HOLDING CURRN 1.5 1.0 0.5 ( ) IH(J) IH(J=25 ) NORMALIZ CAPACIANC Co(VR) Co(VR=1V) j=25 F=1MHz VRMS=1V 0.0-50 -25 0 25 50 75 100 125 0.1 1 10 100 VR, RCRS
YPICAL CIRCUI APPLICAIONS 0640L thru 3100L FUS SPD 1 LCOM QUIPMN.G. MODM IP SPD 1 SPD 2 LCOM QUIPMN.G. ISDN IP IP SPD 1 SPD 2 SPD 3 LCOM QUIPMN.G. LIN CARD he (Positive emperature Coefficient) is an overcurrent protection device
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