Evaluates: MAX5995A/B/C/MAX5974D. MAX5995B Evaluation Kit. Features. General Description

Transcription

1 lick here for production status of specific part numbers. General Description The MX99 evaluation kit (EV kit) is a fully assembled and tested surface-mount circuit board featuring an Ethernet port, network powered-device (PD) interface controller circuit for -V supply rail systems. The EV kit uses the MX99B IEEE 0.af/at/bt-compliant network PD interface controller in a -pin TQFN package with an exposed pad. The I is used in Power-over- Ethernet (PoE) applications requiring D power from an Ethernet network port for PDs such as VoIP phones, wireless access nodes, security cameras, lighting, and building automation. The EV kit receives power from IEEE 0.af/at/btcompliant power-sourcing equipment (PSE). Refer to the MX9, MX9/MX9B, and MX90 I data sheets for PSE controllers. The PSE provides the required -V to -V D power over an unshielded twisted-pair Ethernet network cable to the EV kit s RJ magnetic jack. The EV kit features a x Gigabit RJ magnetic jack and two active full-wave rectifiers (N0 and N0) for separating the D power provided by an endspan or midspan Ethernet system. The EV kit can also be powered by a wall adapter power source. The EV kit provides PB pads to accept the output of a wall adapter power source. When a wall adapter power source is detected, it always takes precedence over the PSE source and allows the wall adapter to power the EV kit. The EV kit demonstrates the full functionality of the I, such as PD detection signature, PD classification signature, Multi-Event lassification (ME), Intelligent MPS, inrush current control, input undervoltage lockout (UVLO), and D-D step-down converter. The step-down converter operates at a fixed 90kHz switching frequency and is configured for an isolated active-clamped forward topology with output voltage +V D that can deliver. of current. Features IEEE 0.af/at/bt-ompliant PD Interface ircuit Multi-Event lassification 0- -V to -V Input Range Demonstrates a W PD Design with Isolated ctive- lamped Forward Topology D-D onverter +V Output at. Startup Inrush urrent Limit of m (typ) urrent Limit During Normal Operation Evaluates Endspan and Midspan Ethernet Systems Type - PSE lassification Indicator Simplified Wall dapter Interface Demonstrates Sleep and Ultra-Sleep Power-Saving Modes Proven PB Layout Fully ssembled and Tested Ordering Information appears at end of data sheet. IEEE is a registered service mark of the Institute of Electrical and Electronics Engineers, Inc. Warning: The EV kit is designed to operate with high voltages. Dangerous voltages are present on this EV kit and on equipment connected to it. Users who power up this EV kit or power the sources connected to it must be careful to follow safety procedures appropriately to work with high-voltage electrical equipment. Under severe fault or failure conditions, this EV kit may dissipate large amounts of power, which could result in the mechanical ejection of a component or of component debris at high velocity. Operate this kit with care to avoid possible personal injury. 9-00; Rev 0; /

2 Quick Start Required Equipment MX99_EVKIT_ n IEEE 0.af/at/bt compliant PSE and a ategory e Ethernet network cable -V, capable D power supply Voltmeter Procedure The EV kit is fully assembled and tested. Follow the steps below to verify board operation: aution: Do not turn on the power supply until all connections are completed. ) Use one of the following methods to power the EV kit: a) If network connectivity is required: onnect a ategory e Ethernet network cable from the EV kit input port RJ connector to the corresponding PSE Ethernet LN connection that provides power to the EV kit. b) If network connectivity is not required: onnect a -V D power supply between the -V and GND PB pads on the EV kit. onnect the power-supply positive terminal to the GND pad and the negative terminal to the -V pad. ) ctivate the PSE power supply or turn on the external D power supply. ) Using a voltmeter, verify that the EV kit provides +V across the V OUT and RTN PB pads. Detailed Description of Hardware (or Software) The MX99 EV kit features an Ethernet port and network PD interface controller circuit for -V supply rail systems. The EV kit contains a IEEE 0.af/ at-compliant network PD interface controller in a -pin TQFN-EP package. The I is used in PoL applications for powering PDs from an unshielded twisted-pair (UTP) Ethernet ategory e network cable and PSE port using endspan or midspan Ethernet systems. The EV kit receives power from an IEEE 0.af/ at-compliant PSE and a UTP cable connected to the EV kit s RJ magnetic jack. The EV kit uses a x gigabit RJ magnetic jack and two active full-wave bridge power rectifiers to separate the -V D power sent by the PSE. The EV kit can accept power from an endspan or midspan PSE network configuration. The EV kit can also accept power from a wall adapter power source. When a wall adapter power source is detected between the POWER+ and POWER- pads, the I s internal isolation switch disconnects, which allows the wall adapter to supply power to the EV kit. The EV kit demonstrates the full functionality of the I such as PD detection signature, PD classification signature, Multi-Event lassification (ME), Intelligent MPS, inrush current control, and UVLO. Resistor R0 sets the PD detection impedance. Resistors R and R set the PD classification signatures. The EV kit s integrated D-D step-down converter is configured for an isolated TIVE-LMPED forward converter topology with output voltage of +V and provides up to. at the output while achieving up to 9.%, 9.% and 9% efficiencies for V/V/V input, respectively. The step-down converter operates at a fixed 90kHz switching frequency. PD lass selection by lassification resistors By selecting the two external resistors connected to LS and LSB pins, the power consumption requested by the PD can be defined. Table shows the the R LS and R LSB resistor values needed to set for PD class and the PD power consumption defined by standards. R LS sets classification current for the st and nd class Events for 0~ class PD complaint with IEEE 0.af/at standard, and RLSB set classification current for the rd to th class event for 0~ class PD complaint with IEEE 0.bt standard. Table. PSE Type and PD lass with lassification Resistor R LS and R LSB PD LSS POWER REQUESTED BY PD R LS R LSB 0.9W 9 OPEN.W OPEN.9W. OPEN.9W. OPEN.W W W 0.9 W 0.9. W 0.9. IEEE is a registered service mark of the Institute of Electrical and Electronics Engineers, Inc. Maxim Integrated

3 Wall dapter Power Source (POWER+, POWER-) The EV kit can also accept power from a wall adapter power source. Use the POWER+ (0V) and POWER- (-0V to -V) PB pads to connect the wall adapter power source. The wall adapter power source operatingvoltage range must be within +0V to +V for the EV kit. When the wall adapter power source is above +0V it always takes precedence over the PSE source. Once the wall adapter power source is detected, the I s internal isolation switch disconnects. The wall adapter power is supplied to V DD through diode S0. Once it takes over, the classification process is disabled. When the wall adapter power source is below +V, the PSE provides power through the I s internal isolation switch. Diode S0 prevents the PSE from back-driving the wall adapter power source when it is below +V. Undervoltage Lockout (UVLO) The EV kit operates up to a -V supply with a turn-on UVLO threshold (V ON ) at -.V and a turn-off UVLO threshold (V OFF ) at -0.0V. When the input voltage is above V ON, the EV kit is enabled. When the input voltage goes below V OFF, the EV kit is disabled. Sleep, Ultra-Sleep Modes and LED Operation The EV Kit supports operating the MX99 in power saving modes such as the Sleep and Ultra Sleep. By using the SW DIP-switch, the SL pin could be driven low to enter the Sleep mode. The ultra-sleep mode could be entered by driving both SL and ULP pin to low (using DIP switch SW, SW). The device could be commanded to exit sleep or ultra-sleep mode by driving the WK pin low through the switch SW. The device features a dedicated LED pin which can be programmed to source out current when the device is in MPS, sleep or ultra-sleep modes. Diode named LED connects between LED pin and V SS and lights up in green color to indicate LED current. The magnitude of the LED current can be controlled as per the value of the R0 resistor connected between the SL pin and V SS. EV Kit ompliance to MX99, MX99 By default, the EV kit is installed with MX99B I. However, the EV kit can also be used to evaluate the MX99 and MX99 variants of the I without any change in schematic. Do note that for evaluating MX99, the duty cycle of the MPS current is selectable through the choice of the resistor R0. This resistor should not be installed while evaluating MX99, MX99B. Maxim Integrated

4 omponent Suppliers SUPPLIER WEBSITE oilraft omchip Diodes Incorporated www. diodes.com Emerson Network Power Fairchild Semiconductor Kemet Keystone Lite-On Electronics www. us.liteon.com Maxim Integrated Murata On Semiconductor Panasonic Pulse Electronics Renesas Technology Group Samsung Electronics Stackpole Electronics Sumida Taiyo Yuden TDK TE onnectivity Texas Instruments Vishay Dale Wurth Elektronik Note: Indicate that you are using the MX99 when contacting these component suppliers. Ordering Information PRT MX99BEVKIT# TYPE EVKIT #Denotes RoHS compliant. Maxim Integrated

5 MX99B EV Kit Bill of Materials PRT QTY DESRIPTION µf ±0%, V XR ceramic capacitor (00) Murata GRMBR0K0 PRT QTY DESRIPTION 00pF ±0%, 0V XR ceramic capacitor (00) Murata GRM9XRK0V,,, 00pF ±%, 0V 0G ceramic capacitor (00) Murata GRMH0J0 00pF ±0%, 000V XR ceramic capacitor (0) Kemet 0XKGR,, 0 0.0µF ±0%, 0V XR ceramic capacitor (00) Tdk GEXRHK µF ±0%, 00V XR ceramic capacitor (00) Murata GRMBR0K, 0.0µF ±%, 0V XR ceramic capacitor (00) Kemet 000JR 9, 0 0.µF ±0%, 00V XR ceramic capacitor (00) Murata GJR0K0 µf ±0%, V XR ceramic capacitor (00) Taiyo Yuden EMK0B0K 0 0.0µF ±%, 00V 0G ceramic capacitor (0) Tdk GL0GJ0,,.µF ±0%, 00V XR ceramic capacitor (0) Murata GRMERK 0.0µF ±0%, 00V XR ceramic capacitor (0) Vishay Vitramon VJ0YKXETZ D, D, D, D D9, D0, D-D D Schottky Diode, 00V,, SMB omchip DBB00-G Diode, 0V, 0., SOD- Diodes Incorporated BVWS--F Zener Diode, 0V, 0.00, SOD- Diodes Incorporated BZT0S--F,, 9,,,, 0-0, 9 0.µF ±0%, 0V XR ceramic capacitor (00) Murata GJRH0K 0pF ±0%, 0V XR ceramic capacitor (00) Murata GRMREK 000pF ±0%, 0V XR ceramic capacitor () Murata GQRGF0KW0) 00µF ±0%, V XR tantalum capacitor () Panasonic TQ00MYF µf ±0%, V XR ceramic capacitor (0) Samsung Electronics LKOLFN µf ±0%, 00V aluminium electrolytic capacitor (ase G) Panasonic EEE-FK0P 00pF ±0%, 0V XR ceramic capacitor (00) Murata GRMRHK0 D D, D D9 D0 D0 D0 D0-D0 H-H H-H Zener Diode, V, 0.00, SOD- Diodes Incorporated BZTS--F Rectifier bridge diode, 00V,., SMT Diodes Incorporated DF0S TVS Diode, 0V,, SM Diodes Incorporated SMJ0--F Zener Diode, V, 0.0, SOD- Diodes Incorporated BZTS--F TVS Diode, V, 00, SMB Diodes Incorporated SMBJ--F Schottky Diode, 00V,, SMT Fairchild Semiconductor S0 Zener Diode, V, 0.00, SOD- On Semiconductor MMZVTG Standoff, / Inch, Female-Threaded, Hex, luminium Generic Part 0 Phillips machine screw, / Inch, Stainless Steel Mcmaster-arr; Keystone; Mcmaster-arr MXPS; 9900;90 Maxim Integrated

6 MX99B EV Kit Bill of Materials (continued) PRT QTY DESRIPTION J_DT, J_POWER L L L L-L L-L LED N N9, N N N0, N0 Q Q R R R R, R, R, R R, R RJ Modular Jack onnector, Female, Through Hole, Pins Te onnectivity 0- Inductor; Ferrite, 000µH ±0%, 0., SMT oilcraft LPS0-0MR Inductor, Sheilded,.µH ±0%,.0, SMT Sumida DMDNP-RM Inductor, Sheilded,.µH ±0%,., SMT Sumida DEPNP-RM-9 Inductor, Ferrite-Bead, 0, Tol = ±%,, SMT Murata BLMEGSN Inductor, Ferrite,.µH ±0%,.0, SMT (00) Murata LQMHPNRMG0 LED Diode,.V, 0.0, Green, SMT (0) Lite-On Electronics Inc. LTST-0GKT MOSFET N-channel, 0V,, SO- Vishay Siliconix SI0DP-T-GE MOSFET N-channel, 00V, 0, SO- Vishay Siliconix SIRDP-T-GE MOSFET P-channel, -0V, -.9, Powerpak- Vishay Siliconix SIDN-T-GE MOSFET N-channel, 00V,., SO- On Semiconductor FDS99 Transistor NPN, 0V,, SOT-9 Diodes Incorporated BX0T Transistor PNP, 0V, 0., SOT- Fairchild Semiconductor MMBT0 kω ±% Resistor (00) Vishay Dale RW00KFK 00kΩ ±% Resistor (00) Panasonic ERJ-ENF00V.kΩ ±0.% Resistor (00) Panasonic ER-YEBV 0kΩ ±0.% Resistor (00) Vishay Dale TNPW000K0BE kω ±0.% Resistor (00) Panasonic ERJ-PBB0 PRT QTY DESRIPTION R R R, R9 R9, R0, R0 R0 R, R, R, R R, R-R R, R, R, R R R, R0 R R9 R0 R R, R9 R R R R R Ω ±% Resistor (00) Vishay Dale RW00RFK 0kΩ ±% Resistor (00) Vishay Dale RW000K0FK 0Ω ±% Resistor (00) Samsung Electronics R0J000S 0Ω ±0% Resistor (00) Vishay Dale RW000000Z0 kω ±% Resistor (00) Vishay Dale RW00K0FK 99kΩ ±% Resistor (00) Panasonic ERJ-RKF99 Ω ±% Resistor (00) Vishay Draloric RW00R00FKEHP 9.9kΩ ±% Resistor (00) Vishay Draloric RW009K9FKEDHP.kΩ ±% Resistor (00) Vishay Dale RKHJ0F kω ±0.% Resistor (00) Vishay Dale TNPW00K00BE.kΩ ±0.% Resistor (00) TE onnectivity RNKB 00kΩ ±% Resistor (00) Vishay Dale RW0000FK 0Ω ±% Resistor (00) Vishay Dale RW000RFK 00Ω ±% Resistor (0) Vishay Dale RW000RFK 00Ω ±% Resistor (00) Vishay Dale RW00000FK 0kΩ ±% Resistor (00) Vishay Dale RW000KFK kω ±% Resistor (00) Stackpole Electronics Inc. RNP00FTDK00.kΩ ±% Resistor (00) Vishay Dale RW00K0FK kω ±% Resistor (00) Vishay Dale RW00K0FK 0Ω ±% Resistor (00) Vishay Dale RW000R0FK Maxim Integrated

7 MX99B EV Kit Bill of Materials (continued) PRT QTY DESRIPTION R R, R R-R R0 R0 R0 R0 R09 RTN, VOUT SW-SW T T TP, TP, TP TP, TP TP, TP0-TP, TP, TP, TP TP, TP9, TP-TP, TP9, TP0 0.9Ω ±% Resistor (00) Vishay Dale RW000R9FK 0.0Ω ±% Resistor (0) Vishay Dale WSL0R000F Ω ±% Resistor (00) Stackpole Electronics Inc. RMF00JTR0.9kΩ ±% Resistor (0) Vishay Dale RW0K9FK 0.kΩ ±% Resistor (00) Vishay Dale RW000KFK.9kΩ ±% Resistor (00) Vishay Dale RW00K9FK 00kΩ ±% Resistor (00) Vishay RW0000KFK 9.9kΩ ±% Resistor (00) Vishay Dale RW009K9FK Banana Jack onnector, Straight, Pin Emerson Network Power Surface Mount Switch SPST, V, 0.0 Omron BFS-000P Power Transformer, SMT- Pulse PNL LN Transformer, Turns Ratio: :, 0µH, 00Khz, SMD, Wurth Elektronik 900 Black Test Point; Dia 0.Inch Keystone 000 Red Test Point; Dia 0.Inch Keystone 00 Orange Test Point; Dia 0.Inch Keystone 00 Blue Test Point; Dia 0.Inch Keystone PRT QTY DESRIPTION U U U -V, HSSIS- GND, GND, J, POWER(+), POWER(-), RTN_PD, RTN_PD, VOUT_PD, VOUT_PD urrent-mode Pwm ontroller, TQFN- Maxim MX9DETE+ High Isolation Voltage Sop Photocoupler, SOP- Renesas Technology orp. PS0- djustable Shunt Regulator, SOT- Texas Instruments TLBIDBZ 0 WEIO wire, 0wg, 900 BUSS PB Pcb: MX99 Maxim MX99 9, 0, 0 0, 0,, D, D, D, D R, R9, R, R, R 0.µF ±0%, 00V XR ceramic capacitor (0) Murata KRMKRKH0 apacitor; Smt (0); Open; Ipc Maximum Land Pattern N/ N/ 0.µF ±0%, V XR ceramic capacitor (00) Murata GRMRE0K apacitor; Smt (00); Open; Formfactor N/ N/ apacitor; Smt (0); Open; Ipc Maximum Land Pattern N/ N/ apacitor; Smt (aseg); Open; Ipc Maximum Land Pattern N/ N/ Schottky Diode, 00V,, SMB omchip DBB00-G 0 Resistor (00) N/ N/ U U, U-U Powered Device, 0.af/at/bt compliant, YQFN- Maxim MX99BETE+ Phototransistor Optocoupler, SMT Fairchild Semiconductor FODSD R0 0 N0, N0 0 R, R 0 0Ω Resistor (00) Vishay Dale RW000000Z0 Transistor NPN, 00V,., SO- On Semiconductor FDS9 kω ±0.% Resistor (00) Vishay Dale TNPW00K0BE Maxim Integrated

8 MX99B EV Kit Schematics L 900 L VB.UH V -V L9 BLMEGSN.UH D X X J_DT V J_POWER 0- D- X PF D DF0S VB L0.UH T L 9 0 V X L.UH BLMEGSN V D- X- 9 DT_TRP- POWER_TRD- 000PF VB L.UH L V 9 0 X 9 0 V -V L.UH SHIELD X+ : D+ - + X+ : D+ X D X+ : D+ SHIELD X D BLMEGSN D- X- D- 000PF X+ : D+ - + X D X 0 D DF0S V VB L.UH L X- V L.UH BLMEGSN 000PF 0.UF R V.UF -V 9.UF R 0.UF 0 000PF R HSSIS-GND 0.UF V V 9 R 0.UF V -V -V R 99K R 9.9K R 99K R 9.9K VB VB D D DBB00-G D0 D0 N0 FDS99 DBB00-G N0 FDS99 D V V D S D D S DBB00-G D G D S D D G DBB00-G D D0 V DBB00-G G D -V S D -V D G D D0 DBB00-G D V VB DBB00-G R R R R 9.9K 99K DBB00-G 9.9K 99K VB Maxim Integrated

9 Maxim Integrated 9 MX99B EV Kit Schematics (continued) X 0 9 U R9 R0 TP TP9 U U U TP TP R TP 0 TP TP TP TP GND -V D0 0 R0 J R0 POWER(-) D0 POWER(+) R09 TP0 TP9 U R0 R LED R0 SW SW SW R0 R0 TP TP TP TP0 TP K 0.UF 0 S0 0.UF.9K FODSD -V 0 -V -V -V 00K FODSD FODSD FODSD -VOUT 9.9K PG -V V 0.0UF 0.9.9K LTST-0GKT MX99BETE+ EP ULP VVK SL LED LS ME PG WD RTN RTN VSS LSB N VDD DET VSS

10 Maxim Integrated 0 MX99B EV Kit Schematics (continued) X 0 9 T TP TP R L U R R9 R TP VOUT TP RTN R R R R R R R0 0 R U Q R D9 N9 D0 D0 D R R R R R9 D N 9 R N R N D L D L 9 9 R0 0 9 U R D 0 D R0 R9 R D9 R R R R R 9 Q R R R R R R R R9 K K V -VOUT VOUT PS0- PNL 000UH.K 0.0 T_ -VOUT RTN V UF 0.0UF V 00UF 0.UF UF 0.UF 0.UF 00 FB FB -VOUT 00PF.K.UH T_ T_ N_G T_.UF.UF UF 0.UF K PG 0PF K -VOUT.UF 0K 00PF K 00 0K 0 0K UF VOUT 0 00PF N_G 0.K UF -VOUT 0.0UF 0K K UF OPEN 0.0UF K 00K 0.0UF 0.0UF 0.0UF 00K 00PF.K K VOUT 0 MX9DETE+ 0.0 UF 00 RTN UF.UH V -VOUT 00PF V 00PF 0K 0K 00PF RTN -VOUT S D G S D G S D G S D G + + EP SS DLMP EN IN UXDRV NDRV PGND S SS GND FB OMP FFB RT DITHER/SYN DT B E 0 9 N + E B

11 MX99B EV Kit PB Layout Diagrams.0 MX99 EV Top Silkscreen Maxim Integrated

12 MX99B EV Kit PB Layout Diagrams (continued).0 MX99 EV Top View Maxim Integrated

13 MX99B EV Kit PB Layout Diagrams (continued).0 MX99 EV Level GND Maxim Integrated

14 MX99B EV Kit PB Layout Diagrams (continued).0 MX99 EV Level PWR Maxim Integrated

15 MX99B EV Kit PB Layout Diagrams (continued).0 MX99 EV Bottom View Maxim Integrated

16 MX99B EV Kit PB Layout Diagrams (continued).0 MX99 EV Bottom Silkscreen Maxim Integrated

17 Revision History REVISION NUMBER REVISION DTE DESRIPTION PGES HNGED 0 / Initial release For pricing, delivery, and ordering information, please visit Maxim Integrated s online storefront at Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc. 0 Maxim Integrated Products, Inc.