Product change information of TLE U to TLE U V 1.2

Transcription

1 Product change information of TLE U to TLE U V 1.2 This document shows the relevant changes from the 3U to the 5U from the application point of view and gives a general overview of this PCN. Therefore this document contains typical curves and also measurements to show possible interesting behaviour of the IC which is partly not covered by the datasheet. 1. Block Diagram TLE U, TLE U TLE U and TLE U have identical architecture. Minor differences are mentioned in section 1 of this document. Infineon Semiconductor Sensor Group Page 1 of 6

2 2. Design comparison of electrical parameters: Topic TLE U TLE U Reason Influence No. of Hall plates 2*2 parallel 2*4 parallel to achieve the same resistance and signal to noise ratio Clamping structure Leakage current at output Supply current VQ High VQ Low Hysteresis vs. temperature Jitter vs. temperature Filter bias voltage (typ.) Filter sensitivity (typical) Influence of leakage current on magn. threshold 3 Zener diodes in series, with a breakthrough voltage of 10 V, total clamping voltage 30V 6 Zener diodes in series, with a breakthrough voltage of 5 V, total clamping voltage 30V Due to different technology only different types of diodes available 10 µa < 24V 50 µa < 16V Due to different clamping structure 4.7/6.1/ /6.7/ /5.3/ /5.9/8.8 Due to different technology No change of performance and spec No change of performance of clamping structure but influence on leakage current, lower breakthrough voltage results in a larger leakage (tunnel) current Increased max. leakage spec change necessary, see also typical curve attached Reduced current consumption is a benefit but spec change necessary, influence on wire breakage detection and two wire applications to be checked Improved Less temperature influence on hysteresis Improved Decrease of app. 30% 1.8V 2V TLE 4923 concept and structures have been used -4mV/mT -5mV/mT TLE 4923 concept and structures have been used No change of performance but reduced temperature dependency. Only influence on testing when forcing an IC switching with the filter bias voltage (limits to be adapted) Higher sensitivity, less noise sensitive 11 µt/ na 8.8 µt/na Less influence of filter leakage, because of higher filter sensitivity Filter resistance 32/40/48 kohm 35/43/52 kohm TLE 4923 concept and structures have been used Initial behaviour after power on Output high for app. 5-10µs Output high for app ms Defined status when filter capacitor completely unloaded Reduced temperature dependency, reduced cut off frequency (app. 7%), power on: spec limit times unchanged Output of the 5U is for a longer time high as the 3U. Output information should be locked out until filter capacitor is fully loaded (>5*R*C) for both types. Infineon Semiconductor Sensor Group Page 2 of 6

3 3. Comparison of typical diagrams of TLE U and 3U: Influence of Filter leakage: (Definition: Positive currents leave the IC, similar to leakage on filter capacitor) TLE U: Threshold shift vs. filter leakage current C 2,0 1,5 1,0 Bop Brp 0,5 B [mt] 0,0-0,5-1,0-1,5-2, Ic [na] B/mT TLE4921-3U: Threshold shift vs. filter leakage current C 2 1,5 1 0,5 Bop/mT Brp/mT 0-0,5-1 -1, Ic/nA Infineon Semiconductor Sensor Group Page 3 of 6

4 Magnetic hysteresis: TLE U: Hysteresis versus Temperature Bhy = Brp-Bop f = 200Hz 3 max min Average Bhy [mt] Tj [ C] 2,50 TLE4921-3U: Hysteresis versus Temperature Bhy = Brp-Bop f=200hz 2,00 Bhy/mT 1,50 B/mT 1,00 0,50 0,00 Ta/ C Infineon Semiconductor Sensor Group Page 4 of 6

5 Jitter vs. Temperature: TLE U/5U Periodjitter (1s) vs. Temp. magnetic field: f=1khz B= 5mT 9,0 8,0 Std Dev [µs] 7,0 6,0 5,0 4,0 3,0 TLE4921-5U TLE U 2,0 1,0 0,0 T [ C] TLE U/5U Periodjitter comparison vs. Temp. magnetic field: f=1khz B= 5mT period [µs] Mean 5U Max 5U Min 5U Mean 3U Max 3U Min 3U T [ C] Infineon Semiconductor Sensor Group Page 5 of 6

6 Output leakage vs. temperature & output voltage (TLE U): 0,014 TLE U: Output leakage current vs. Temp & output V I QL [ma] 0,012 0,010 0,008 0,006 Uq =3V Uq =6V Uq =12V Uq =18V Uq =20V Uq =24V 0,004 0,002 0,000 Tj [ C] Infineon Semiconductor Sensor Group Page 6 of 6