IHM B modules with IGBT 4. (1200V and 1700V)

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1 IHM B modules with IGBT 4 (1200V and 1700V)

2 Table of content Key applications Technology Characteristics and features Usage and handling Product type range Quality and reliability Advantages versus competitor; USP Page 2

3 Typical applications for 1200V IHM modules Industrial drives Auxiliary drives UPS Welding & Heating Page 3

4 Typical applications for 1700V IHM modules Industrial drives Traction drives Windmills Auxiliary drives Page 4

5 Technology - What is new? NEW NEW FZ FZ R17 R17 H P4 P4 _B2 _B2 Single switch I NOM I NOM 3600A U CE CE V IHM IHM B housing High High Power IGBT IGBT 4 4 Traction version New IHM B housing New IGBT 4 chip Page 5

6 New IHM B housing is mechanically compatible to previous IHM A generation IHM A housing IHM B housing Both housing types are 100% mechanically compatible concerning footprint - 130x140 mm housing - 140x190 mm housing mounting positions - to the heat sink - to the bus bar -to the PCB Page 6

7 IHM B are available for industry and traction applications Applications: Traction Industry Module features: Base plate: AlSiC Cu Substrate: Optimised Al 2 O 3 Power Cycling: Optimised Standard Thermal Cycling: Optimised Standard Isolation: 4 kv 3,4 kv [RMS, 50Hz, 1 Min.] Σ = Higher Reliability Σ = Cost Efficiency Page 7

8 The quality of the new IHM B design became improved significantly IHM A IHM B Part minimization, e.g. no epoxy, no internal PCB Simplified assembly process Higher automation level during module mounting Use of a 1-part-housing to avoid gaps between lid and frame Page 8

9 New designed main terminals offer a lot of electrical and mechanical improvements Increased contact surface to the bus bar by use of circular holes instead of elongated holes Flexibility of the main terminals by use of meanders Improved cooling of the terminals through bigger contact surface to the DCB IHM A Reduced stray inductance Reduced lead resistance IHM B Page 9

10 New chip layout results in significantly better thermal performance of the module Homogenous temperature distribution between the chips Improved cooling due to smaller distance between chips and mounting positions Enlargement of the thermally active area by use of more diode chips (4 diode chips instead of 2) IHM A IHM B Page 10

11 Improvements in the new housing generation IHM B versus IHM A in numbers Module weight Module weight weight [g] weight [g] IHM A IHM A - 20% - 20% IHM B IHM B Rcc'-ee' [mohm] Rcc'-ee' [mohm] 0,15 0,15 0,12 0,12 0,09 0,09 0,06 0,06 0,03 0, Module lead resistance Module lead resistance - 30% - 30% IHM A IHM B IHM A IHM B Ls,ce [nh] Ls,ce [nh] Module stray inductance Module stray inductance - 40% - 40% IHM A IHM B IHM A IHM B Page 11

12 IGBT 4 combines all advantages of Trench & Field-Stop Technology NEW! high cost "! negative TK positive TK! high on-state voltage positive TK reduced losses positive TK reduced losses increased T j Page 12

13 IGBT4 can be operated at junction temperature T vj,op = 150 C New chip surface metallization for optimized bonding process Increased Power Cycling capability ($ see reliability slides) Short circuit capability for t p = 10µs t T vj,op = 150 C Up to 20% higher current I RMS possible by using T vj,op = 150 C Available in 8 wafer technology Page 13

14 Two optimized IGBT 4 types fulfill different application requirements P4 soft switching low static losses Stray inductance Ls Switching frequency fsw soft switching low dynamic losses fast switching low static losses fast switching low dynamic losses E4 Page 14

15 Two IGBT 4 types are available in 1200V and 1700V blocking voltage High Power IGBT4: P4 -with softly switching behaviour - can be used in applications with lower frequencies (f sw <= 4kHz) - is suitable for high current applications with higher stray inductance -theemv behaviour is significantly improved Medium Power IGBT4: E4 -with fast switching behaviour - can be used in applications with higher frequencies (f sw <=8kHz) - is suitable for high current application with lower stray inductance - shows comparable switching performance like KE3 Page 15

16 The new 1200V IGBT 4 shows significantly improved switching behaviour compared to IGBT 3 Comparison of IGBT 4 High Power (HP4) vs. IGBT 3 (KE3) FZ2400R12KE3 vs. FZ2400R12HP4 I C = 1200A, T = 25 C, without clamping IGBT 3, V CE = 350V IGBT 4, V CE = 800V IGBT 3 shows beginning oscillations at already V CE > 350V. IGBT 4 is good controllable in the whole V CE range Page 16

17 The new 1700V IGBT 4 shows significantly improved switching behaviour compared to IGBT 3 Comparison of IGBT4 High Power (HP4) vs. IGBT3 (KE3) FZ3600R17KE3 vs. FZ3600R17HP4 I C = 3600A, V DC = 600V, T = 25 C, without clamping IGBT 3, V CE = 600V IGBT 4, V CE = 900V IGBT 3 shows strong oscillations and high overvoltage at already V CE > 600V. IGBT 4 is good controllable in the whole V CE range Page 17

18 Turn-off behaviour of IGBT 2 and IGBT 4 Test conditions: U DC =900V Ic=I nom =1600A T=25 C R goff =0,9Ω R gon =1,2Ω, Ls=70nH FZ1600R17KF6C_B2 E off = 461mJ V CEmax = 1464V beginning of clamping FZ1600R17HP4_B2 E off = 425mJ V CEmax = 1332V A comparison of the turn-off behaviour shows for IGBT4: 10% lower Eoff losses 130V lower overvoltage spike V CEmax operation without clamping possible Page 18

19 Label of each module includes several useful information about the module Example of a label of FZ2400R17HP4_B29 module: Serial number of the module Module type (module name) Bar Code 128 Date Code of production (year 2008, calendar week 42) V CEsat and V F classification (more details, see next page) Details of bar code 128: digit 1-5: module serial number digit 6-11: SAP material number digit 12-19: Internal production number digit 20-23: Date Code of production digit 24-25: V CEsat -class digit 26-27: V F -class For more details, see PCN und Page 19

20 V CEsat and V F classification can be used for easier paralleling of modules Example: 26 V CEsat class 2.6 includes all V CEsat values between 2.54V 2.64V 21 V F class 2.1 includes all V F values between 2.05V 2.14V $ By paralleling of modules with the same V CEsat /V F class the smallest parameter distribution can be reached ( V CEsat/F = 100mV within one V CEsat /V F class) Page 20

21 What is to consider during the mounting procedure? An homogeneous and as thin as possible distribution of the thermal grease during mounting is important Cavities between heat sink and module can result in hot spots (red marked area) Dismounted base plate with not sufficient grease thickness Dismounted base plate with sufficient grease thickness Page 21

22 Screen printing simplifies the mounting procedure Homogeneous and reproducible layer of thermal grease Grease is deposited where it is needed Thickness of the grease is adjusted to cavity spec of the module Drawing of the jig can be provided for 130x140mm and 140x190mm housing Grease applied by screen printing after dismounting of the module - no cavities - homogeneous - as thin as necessary For more details, see PCN Page 22

23 A lot of reliability tests are performed on IGBT modules Type Description Conditions Standard Normative references HTRB High Temperature Reverse Bias HTGS High Temperature Gate Stress H3TRB High Humidity High Temperature Reverse Bias 1000h, T j = 150 C, 0.9*V CEmax ( 2.0 kv), 0.8*V CEmax (>2.0 kv) 1000h, T j = 150 C, V RM =0.9*V RRM, V RM /V DM =0.8*V RRM /V DRM IEC /6 ch. V IEC : h, ±V GEmax, T j = 150 C according to IEC : h, 85 C, 85%RH, V CE = 0.8*V CEmax, but max. 80 V, V GE = 0V V D, V R = 0V TST Thermal Shock T stg min - T stg max, typ. 40 C to +125 C, but T max 190K t storage 1h, t change 30 s High Power (standard): 20 cycles; Medium Power: 50 cycles, BIP: 25 cycles TC Thermal Cycling External heating and external cooling 2 min. < t cycl. < 6 min; T C = 80K, T cmin. = 25 C High Power (standard): 2 kcycles; PC (min) PC (sec) RS S Medium Power, BIP: 5 kcycles Power Cycling [min] Internal heating and external cooling 2 min. < t cycl. < 6 min; T C = 50K, T j < T jmax High Power (standard): 20 kcycles; Medium Power, BIP: 50 kcycles Power Cycling [sec] Internal heating and external cooling 2 < t cycl < 5 sec; T jmax = 150 C Typical: T j = 60K,130 kcycles. Resistance to Solder Heat (if applicable) Solderability (if applicable) IEC 60749: 1996 IEC Ca: 1985 related standards EN EN EN IEC Ca: 1969 EN IEC 60749: 1996 IEC Na: 1984 according to IEC /6 ch. IV IEC :1998 IEC Na: 1974 EN EN IEC /6 ch. IV EN IEC : C ± 5 C, 10 s ± 1 s wave IEC 60749: 1996 IEC Tb: 1979 IEC Tb: 1979 EN C ± 5 C, aging 3 IEC 60749: 1996 IEC Ta: 1979 V Vibration (optional) In accordance with standard Typical: Hz, 20 m/s 2, 2h each direction x, y, z EN replaced CECC 50000:1986 equivalent to DIN part 1, EN with chapter for Diodes, for Thyristors and for IGBTs. IEC changed identification number for documents in 1997 by adding to the old number, for example IEC 68 was replaced by IEC IEC Ta: 1979 EN IEC 60749: 1996 IEC Fc: 1995 IEC Fc: 1970 EN EN Page 23

24 Power Cycling means stress for the bond wire connections Thermal Cycles of Junction and Heatsink Thermal Cycles of Junction and Heatsink Temperature [ C] Temperature [ C] Case Temperature Case Temperature Junction Temperature 100 Junction Temperature Time [min] Time [min] X Si chip DCB X base plate Solder joint Power cycling test conditions: Driving the chip/bond wire system at two different temperatures ( T vj between T vj1 and T vj2 ) Failure criteria is an increase of the saturation voltage by 5% These 5% are already included in the data sheet values Page 24

25 Power Cycling capability of IHM B modules Power Cycle curves for E4, P4, T4 module series with new mounting technology 1,0E+11 1,0E+10 1,0E+09 dotted lines: estimated n (No. of Cycles) 1,0E+08 1,0E+07 Tjmax = 150 癈 cycle time: 3 sec dotted lines: estimated 1,0E+06 1,0E+05 1,0E Delta Tj in K Page 25

26 Thermal Cycling means stress for the soldering connections Thermal Cycles of Junction and Heatsink Thermal Cycles of Junction and Heatsink Temperature [ C] Temperature [ C] Case Temperature Case Temperature Junction Temperature 100 Junction Temperature Time [min] Time [min] Si chip X DCB X base plate Solder joint Thermal cycling test conditions: Driving the case / base plate at two different temperatures ( T c between T c1 and T c2 ) Failure criteria is an increase of the thermal resistance R th by 20% These 20% are already included in the data sheet values Page 26

27 Thermal Cycling capability of IHM modules Thermal Cycling Capability for High Power Modules issued ; rev 1 IHM/IHV Traction (AlSiC) PrimePACK Industry IHM Standard (Cu) cycle time: t on +t off typ. 5min temperature level: T case,min =25 C No. of cycles dotted lines: estimated delta T case [K] load conditions: T-rise by internal active heating T-fall by external cooling For a overall lifetime estimation the respective dependency N=f( Tvj) has also to be taken into account ("Power cycling curve") Page 27

28 Thermal Shock means stress for the whole module Thermal shock test conditions: Driving the whole module at two different temperatures ( T st between T st1 and T st2 ) Two-chamber-test at T st1 =-40 C and T st2 = 125 C for industry and T st1 = -55 C and T st2 = 125 C for special traction modules Failure criteria is an increase of the saturation voltage by 5% and/or increase of the thermal resistance by 20% By introduce of ultrasonic welding thermal shock capability is increased by factor 5 Page 28

29 The new IHM B generation offers several advantages for the customer New IHM B housing is 100% compatible to previous generation New IGBT 4 allows operating temperature up to 150 C 20% higher I RMS are possible by use of T vj = 150 C Short circuit capability is given for 150 C Two optimized versions of IGBT 4 are available Power cycling capability became increased The quality and mechanical stability is improved Screen printing for homogeneous applying of thermal grease is available Green product acc. to RoHs Page 29

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