LSIMOE,, mohm, TO--L LSIMOE N-channel, Enhancement-mode Si MOSFET RoHS Pb Product Summary haracteristics alue Unit DS Typical R DS(ON) mω ( T ). A ircuit Diagram TO--L Features * * Body diode Optimized for highfrequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off operation at all temperatures Ultra-low on-resistance Environmental Littelfuse RoHS logo = RoHS conform Littelfuse HF logo = Halogen Free Littelfuse Pb-free logo = Pb-free lead plating RoHS Pb Applications High-frequency applications Solar Inverters Switch Mode Power Supplies UPS Motor Drives High oltage D/D onverters Battery hargers Induction Heating Littelfuse, Inc. Rev., Revised: //
LSIMOE,, mohm, TO--L Maximum Ratings haracteristics Symbol onditions alue Unit ontinuous Drain urrent GS =, T =. GS =, T =. A Pulsed Drain urrent (pulse) T = A Power Dissipation P D T =, T J = W Operating Junction Temperature T J - to GS,MAX Absolute maximum values - to Gate-source oltage GS,OP,TR Transient, <% duty cycle - to GS,OP Recommended D operating values - to Storage Temperature T STG - - to Lead Temperature for Soldering T sold - Mounting Torque M D M or - screw. Nm. in-lb Footnote : Pulse width limited by T J,max Thermal haracteristics haracteristics Symbol max Unit Maximum Thermal Resistance, junction-to-case R θj. /W Maximum Thermal Resistance, junction-to-ambient R θja /W Electrical haracteristics (T J = unless otherwise specified) haracteristics Symbol onditions Min Typ Max Unit Static haracteristics Drain-source Breakdown oltage (BR)DSS GS =, = μa - - Zero Gate oltage Drain urrent DS =, GS = -. SS DS =, GS =, T J = -. - μa Gate Leakage urrent I GSS,F GS =, DS = - - I GSS,R GS = -, DS = - - na = A, = - GS Drain-source On-state Resistance R DS(ON) = A, GS = - - mω = A, GS =, T J = - - Gate Threshold oltage DS = GS, = ma... GS,(th) DS = GS, = ma, T J = -. - Gate Resistance R G Resonance method, Drain-Source shorted -. - Ω Littelfuse, Inc. Rev., Revised: //
LSIMOE,, mohm, TO--L Electrical haracteristics (T J = unless otherwise specified) alue haracteristics Symbol onditions Unit Min Typ Max Dynamic haracteristics Turn-on Switching Energy E ON DD =, = A, - 9 - Turn-off Switching Energy GS = -/+, R G,ext = Ω, E OFF - - μj L =.mh Total Per-cycle Switching Energy E TS - - Input apacitance ISS - - Output apacitance Reverse Transfer apacitance OSS RSS DD =, GS =, f = MHz, A = m - - - - pf OSS Stored Energy E OSS -. - μj Total Gate harge Q g - - Gate-source harge Q gs =, I = A, DD D GS = -/+ - - n Gate-drain harge Q gd - - Turn-on Delay Time t d(on) - 9 - =, DD = -/+, GS Rise Time t r = A, R G,ext = Ω, - - ns Turn-off Delay Time t d(off) R L = Ω, - - Timing relative to Fall Time DS t f - - Reverse Diode haracteristics alue haracteristics Symbol onditions Min Typ Max I Diode Forward oltage S = A, GS = -. - SD I S = A, GS =, T J = -. - ontinuous Diode Forward urrent I S GS =, T = - - Peak Diode Forward urrent I SP - - Unit A Footnote : Pulse width limited by T J,max Littelfuse, Inc. Rev., Revised: //
LSIMOE,, mohm, TO--L Figure : Maximum Power Dissipation ( T J = ) Figure : Transfer haracteristics ( DS = ) 9 (W) Dissipation Maximum Power - - ase Temperature, T ( ) - Gate-Source oltage, GS () Figure : Output haracteristics ( T J = ) Figure : Output haracteristics ( T J = ) Drain-Source oltage, DS () Drain-Source oltage, DS () Figure : Output haracteristics (T J = - ) Figure : Reverse onduction haracteristics ( T J = ) Reverse oltage, SD (). -......... Reverse urrent, I S (A) Drain-Source oltage, DS (). Littelfuse, Inc. Rev., Revised: //
LSIMOE,, mohm, TO--L Figure : Reverse onduction haracteristics (T J = ) Figure : Reverse onduction haracteristics (T J = - ) Reverse oltage, SD (). Reverse oltage, SD ()... -....... Reverse urrent, I S (A) -....... Reverse urrent, I S (A).... Figure 9: Transient Thermal Impedance Figure : Safe Operating Area (T = ) T ransient Thermal Impedance, Z th,j (Normalized to R th,j ) - - -...... Single Pulse - - - - - - Pulse Width (s) µs µs. ms D Single Pulse.. Drain-Source oltage, DS () Figure : On-resistance vs. Drain urrent Figure : Normalized On-resistance On-resistance, R DS(ON) (m ) - 9 Normalized On-resistance, R DS(ON)... ( GS =, = A) - - - Junction Temperature, T J ( ) Littelfuse, Inc. Rev., Revised: //
LSIMOE,, mohm, TO--L Figure : Threshold oltage Figure : Drain-Source Blocking oltage Threshold oltage, GS(TH) ()........ ( = ma). - - - Junction Temperature, T J ( ) Normalized Blocking oltage, (BR)DSS ().....99.9.9 ( = µa).9 - - - Junction Temperature, T J ( ) Figure : Junction apacitances Figure : Junction apacitances ISS ISS apacitance (pf) OSS apacitance (pf) OSS RSS RSS (f = MHz) Drain oltage, DS () (f = MHz) Drain oltage, DS () Figure : OSS Stored Energy E OSS Figure : Gate harge Stored Energy, E OSS (µj) Gate-Source oltage, GS () Drain oltage, DS () - ( DD =, = A) Gate harge, Q g (n) Littelfuse, Inc. Rev., Revised: //
LSIMOE,, mohm, TO--L Figure 9: Switching Energy vs. Drain urrent Figure : Switching Energy vs. Gate Resistance Switching Energy (µj) DD = R G,ext = Ω GS = -/+ FWD = LSIMOE L =. mh T J = E TS E ON Switching Energy (µj) DD = = A GS = -/+ FWD = LSIMOE L =. mh T J = E TS E ON E OFF E OFF External Gate Resistance, R G,ext ( ) Package Dimensions TO--L E A E/ A OPTIONAL b (x) E Q D e e A Recommended Hole Pattern Layout. R.9 L L.. UNIT: mm c S ØP E b ØP D D b (x) Notes:. Dimensions are in millimeters. Dimension D, E do not include mold flash. Mold flash shall not exceed. mm per side. These measured at the outermost extreme of plastic body..øp to have a maximum draft angle of. to the top of the part with a maximum hole diameter of. Symbol Millimeters Min Nom Max A... A... A..9. b.99 -. b. -.9 b.9 -. c...9 D..9. D. - - D..9. e. BS E..9. E... E.9.. L 9..9. L..9. øp... øp..9. Q.9.. S... Littelfuse, Inc. Rev., Revised: //
LSIMOE,, mohm, TO--L Part Numbering and Marking System Packing Options SIMOE L F YYWWE ZZZZZZ-ZZ SI = Si = Gen MO = MOSFET = oltage Rating ( ) E = TO--L = RDS(ON) ( mohm) YY = Year WW = Week E = Special ode ZZZZZZ-ZZ = Lot Number Part Number Marking Packing Mode M.O.Q LSIMOE SIMOE Tube (pcs) Packing Specification TO--L Ø Ø Ø Ø NOTE:. All pin plug holes are considered critical dimension. Tolerance is to be ±. unless otherwise specified. Dimension are in inches (and millimeters). Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, omponents intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and onditions of Sale, unless otherwise agreed by Littelfuse. Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse, Inc. Rev., Revised: //