LSIMO2E2, 2, 2 mohm, TO-247-3L LSIMO2E2 2 N-channel, Enhancement-mode Si MOSFET RoHS Pb Product Summary haracteristics alue Unit DS 2 Typical R DS(ON) 2 mω I D ( T ) 8 A ircuit Diagram TO-247-3L Features * * Body diode Optimized for highfrequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off operation at all temperatures Ultra-low on-resistance 2 3 Environmental Littelfuse RoHS logo = RoHS conform Littelfuse HF logo = Halogen Free Littelfuse Pb-free logo = Pb-free lead plating RoHS Pb Applications High-frequency applications Solar Inverters Switch Mode Power Supplies UPS Motor Drives High oltage D/D onverters Battery hargers Induction Heating 28 Littelfuse, Inc. Revised: 3/2/8
LSIMO2E2, 2, 2 mohm, TO-247-3L Maximum Ratings haracteristics Symbol onditions alue Unit ontinuous Drain urrent I D = 2, T = 25 27 = 2, T = 8 Pulsed Drain urrent I D(pulse) T = 25 54 A Power Dissipation P D T = 25, T J = 5 39 W Operating Junction Temperature T J -55 to 5 Gate-source oltage,max Absolute maximum values -6 to 22,OP,TR Transient, <% duty cycle - to 25,OP Recommended D operating values -5 to 2 Storage Temperature T STG - -55 to 5 Lead Temperature for Soldering T sold - 26 Mounting Torque M D M3 or 6-32 screw Footnote : Pulse width limited by T J,max A.6 Nm 5.3 in-lb Thermal haracteristics haracteristics Symbol alue Unit Maximum Thermal Resistance, junction-to-case R th,j,max.9 /W Maximum Thermal Resistance, junction-to-ambient R th,ja,max 4 /W Electrical haracteristics (T J = 25 unless otherwise specified) haracteristics Symbol onditions Min Typ Max Unit Static haracteristics Drain-source Breakdown oltage (BR)DSS =, I D = 25 μa 2 - - Zero Gate oltage Drain urrent DS = 2, = - I DSS DS = 2, =, T J = 5-2 - μa Gate Leakage urrent I GSS,F = 22, DS = - - I GSS,R = -6, DS = - - na I Drain-source On-state Resistance D = 4 A, = 2-2 5 R DS(ON) I D = 4 A, = 2, T J = 5-58 - mω Gate Threshold oltage DS =, I D = 7 ma.8 2.8 4.,(th) DS =, I D = 7 ma, T J = 5 -.9 - Gate Resistance R G Resonance method, Drain-Source shorted -.85 - Ω 28 Littelfuse, Inc. Revised: 3/2/8
LSIMO2E2, 2, 2 mohm, TO-247-3L Electrical haracteristics (T J = 25 unless otherwise specified) alue haracteristics Symbol onditions Unit Min Typ Max Dynamic haracteristics Turn-on Switching Energy E ON DD = 8, I D = 4 A, - - Turn-off Switching Energy = -5/+2, R G,ext = 2 Ω, E OFF - 68 - μj L =.4mH, FWD = LSI2SD2A Total Per-cycle Switching Energy E TS - 79 - Input apacitance ISS - 25 - Output apacitance Reverse Transfer apacitance OSS RSS DD = 8, =, f = MHz, A = 25 m - - 53 8 - - pf OSS Stored Energy E OSS - 7 - μj Total Gate harge Q g - 8 - Gate-source harge Q gs = 8, I DD = 4 A, D = -5/+2-2 - n Gate-drain harge Q gd - 28 - Turn-on Delay Time t d(on) - 2 - = 8, DD = -5/+2, GS Rise Time t r I D = 4 A, R G,ext = 2 Ω, - 7 - ns Turn-off Delay Time t d(off) R L = 56 Ω, - 6 - Timing relative to Fall Time DS t f - - Reverse Diode haracteristics alue haracteristics Symbol onditions Min Typ Max I Diode Forward oltage S = 7 A, = - 3.8 - SD I S = 7 A, =, T J = 5-3.4 - ontinuous Diode Forward urrent I S GS =, T = 25 - - 26 Peak Diode Forward urrent I SP - - 54 Unit A Footnote : Pulse width limited by T J,max 28 Littelfuse, Inc. Revised: 3/2/8
LSIMO2E2, 2, 2 mohm, TO-247-3L Figure : Maximum Power Dissipation ( T J = 5 ) Figure 2: Transfer haracteristics ( DS = ) 6 6 (W) Dissipation Maximum Power 4 2 8 6 4 2-75 -25 25 75 25 75 ase Temperature, T () Drain urrent, I D (A) 5 4 3 5 2 25-55 5 5 2 Gate-Source oltage, () Figure 3: Output haracteristics ( T J = 25 ) Figure 4: Output haracteristics ( T J = 5 ) 5 (Pulse Width < 4 µs) 5 (Pulse Width < 4 µs) Drain urrent, I D (A) 4 3 2 2 8 6 4 2 Drain urrent, I D (A) 4 3 2 8 6 4 2 2 2 4 6 8 2 4 6 8 Drain-Source oltage, DS () Drain-Source oltage, DS () Figure 5: Output haracteristics (T J = -55 ) Figure 6: Reverse onduction haracteristics ( T J = 25 ) Drain urrent, I D (A) 5 (Pulse Width < 4 µs) 4 2 3 8 2 6 4 2 2 4 6 8 8 Reverse oltage, SD () 6 4 2-5 5 2 5 2 3 4 Reverse urrent, I S (A) Drain-Source oltage, DS () 5 28 Littelfuse, Inc. Revised: 3/2/8
LSIMO2E2, 2, 2 mohm, TO-247-3L Figure 7: Reverse onduction haracteristics (T J = 5 ) Figure 8: Reverse onduction haracteristics (T J = -55 ) Reverse oltage, SD () 8 6 Reverse oltage, SD () 4 2 Reverse urrent, I S (A) -5 5 2 5 2 3 4 Reverse urrent, I S (A) 5 Figure 9: Transient Thermal Impedance Figure : Safe Operating Area (T = 25 ) T ransient Thermal Impedance, Z th,j (Normalized to R th,j ) - -2-3.5.3..5.2. Single Pulse -6-5 -4-3 -2 - Pulse Width (s) Drain urrent, I D (A) µ µ Drain-Source oltage, DS () Figure : Normalized On-resistance vs. Drain urrent Figure 2: Normalized On-resistance Normalized On-resistance, R DS(ON) 2.5 2.5.5 5-55 25 ( = 2 ) 2 3 4 5 Drain urrent, I D (A) Normalized On-resistance, R DS(ON).6.4.2.8.6.4.2 ( = 2, I D = 4 A) -75-5 -25 25 5 75 25 5 75 Junction Temperature, T J () 28 Littelfuse, Inc. Revised: 3/2/8
LSIMO2E2, 2, 2 mohm, TO-247-3L Figure 3: Threshold oltage Figure 4: Drain-Source Blocking oltage Threshold oltage, (TH) () 4. 3.5 3. 2.5 2..5..5 (I D = 7 ma). -75-5 -25 25 5 75 25 5 75 Junction Temperature, T J () Normalized Blocking oltage, (BR)DSS ().4.3.2..99.98.97 (I D = 25 µa).96-75 -5-25 25 5 75 25 5 75 Junction Temperature, T J () Figure 5: Junction apacitances Figure 6: Junction apacitances ISS ISS apacitance (pf) OSS RSS apacitance (pf) OSS RSS (f = MHz) 2 4 6 8 Drain oltage, DS () (f = MHz) 5 5 2 Drain oltage, DS () Figure 7: OSS Stored Energy E OSS Figure 8: Gate harge 25 2 Stored Energy, E OSS (µj) 2 5 5 Gate-Source oltage, () 5 5 2 4 6 8 Drain oltage, DS () -5 ( DD = 8, I D = 4 A) 2 3 4 5 6 7 8 9 Gate harge, Q g (n) 28 Littelfuse, Inc. Revised: 3/2/8
LSIMO2E2, 2, 2 mohm, TO-247-3L Figure 9: Switching Energy vs. Drain urrent Figure 2: Switching Energy vs. Gate Resistance Switching Energy (µj) 7 6 5 4 3 2 DD = 8 R G,ext = 2 = -5/+2 FWD = LSI2SD2A L =.4 mh T J = 25 E TS E ON E OFF Switching Energy (µj) 45 4 35 3 25 2 5 5 DD = 8 I D = 4 A = -5/+2 FWD = LSI2SD2A L =.4 mh T J = 25 E TS E ON E OFF 2 3 4 Drain urrent, I D (A) 2 4 6 8 2 External Gate Resistance, R G,ext () Package Dimensions TO-247-3L E A E2/2 A2 OPTIONAL b2 (2x) E2 Q D e e A Recommended Hole Pattern Layout 2.46 R.93 L L 5.44 5.44 UNIT: mm c Notes: S ØP E b4 ØP D D2 b (3x). Dimensions are in millimeters 2. Dimension D, E do not include mold flash. Mold flash shall not exceed.27 mm per side measured at outer most extreme of plastic body. 3.øP to have a maximum draft angle of 38. mm to the top of the part with a maximum hole diameter of 3.92 mm. Symbol Millimeters Min Nom Max A 4.8 5.3 5.2 A 2.25 2.38 2.54 A2.85.98 2. b.99 -.4 b2.65-2.39 b4 2.59-3.43 c.38.64.89 D 2.8 2.96 2.34 D 3.5 - - D2.5.9.35 e 5.44 BS E 5.75 5.9 6.3 E 3.6 4.2 4.5 E2 4.9 4.32 4.83 L 9.8 2.9 2.57 L 3.8 4.9 4.45 øp 3.55 3.6 3.66 øp 7.6 7.9 7.32 Q 5.49 5.6 6.2 S 6.5 6.7 6.3 28 Littelfuse, Inc. Revised: 3/2/8
LSIMO2E2, 2, 2 mohm, TO-247-3L Part Numbering and Marking System Packing Options SIMO2E2 L F YYWWE ZZZZZZ-ZZ SI = Si = Gen MO = MOSFET 2 = oltage Rating (2 ) E = TO-247-3L 2 = RDS(ON) (2 mohm) YY = Year WW = Week E = Special ode ZZZZZZ-ZZ = Lot Number Part Number Marking Packing Mode M.O.Q LSIMO2E2 SIMO2E2 Tube 45 Packing Specification TO-247-3L Ø Ø Ø Ø NOTE:. All pin plug holes are considered critical dimension 2. Tolerance is to be ±. unless otherwise specified 3. Dimension are in inch (and millimeters). Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and onditions of Sale, unless otherwise agreed by Littelfuse. Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 28 Littelfuse, Inc. Revised: 3/2/8