LSICSD065C06A 650 V, 6 A SiC Schottky Barrier Diode Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 75 C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features AEC-Q0 qualified Positive temperature coefficient for safe operation and ease of paralleling 75 C maximum operating junction temperature Excellent surge capability Extremely fast, temperature-independent switching behavior Dramatically reduced switching losses compared to Si bipolar diodes Circuit Diagram TO-5-L (DPAK) Applications Boost diodes in PFC or DC/DC stages Switch-mode power Solar inverters Industrial motor drives EV charging stations Uninterruptible power Environmental Littelfuse logo = conform Littelfuse HF logo = Halogen Free Littelfuse -free logo = -free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage RM - 650 V DC Blocking Voltage = 5 C 650 V T = 5 C 8.5 C Continuous Forward Current I F = 35 C 8.6 A = 5 C 6 Non-Repetitive Forward Surge Current I FSM = 5 C, T P = 0 ms, Half sine pulse 3 A Power Dissipation P Tot = 5 C 75 = 0 C 3 Operating Junction Temperature - -55 to +75 C Storage Temperature T STG - -55 to +50 C Soldering Temperature (reflow MSL ) T SOLD - 60 C W 08 Littelfuse, Inc. Revised: 0/07/9
Electrical Characteristics Characteristics Symbol Conditions Value Min. Typ. Max. I F = 6 A, = 5 C -.5.8 Forward Voltage V F I F = 6 A, = 75 C -.85 - Unit V V Reverse Current R = 650 V I, T = 5 C - < 50 J R μa = 650 V, T = 75 C - 5 - J = V, f = MHz - 300 - Capacitance C = 00 V, f = MHz - 39 - = 400 V, f = MHz - 8 - Qc = C(V)dV 0 Total Capacitive Charge Q C = 400 V, - 0 - nc pf Thermal Characteristics Characteristics Symbol Value Unit Thermal Resistance R θjc.0 C/W Figure : Typical Foward Characteristics Figure : Typical Reverse Characteristics 6 = 5 C 5 4 = 5 C = 50 C = 75 C Current (A) 3 = -55 C 0 0 0.5 0.5 0.75.5.5.75 Voltage (V) 08 Littelfuse, Inc. Revised: 0/07/9
Figure 3: Power Derating Figure 4: Current Derating Figure 5: Capacitance vs. Reverse Voltage Figure 6: Capacitive Charge vs. Reverse Voltage Figure 7: Stored Energy vs. Reverse Voltage Figure 8: Transient Thermal Impedance Normalized Transient Thermal Impedance E+0 E- E- E-3 0.5 0.3 0. 0.05 0.0 0.0 Single E-6 E-5 E-4 E-3 E- E- E+0 Pulse Width (s) 08 Littelfuse, Inc. Revised: 0/07/9
Dimensions TO-5-L (DPAK) D L4 E b3 L3 e x b x SEE DETAIL "C" NOTE: - L4- MAXIMUM PLASTIC PROTRUSION. - L- REFERENCE FOR FOOT LENGTH MEASUREMENT. Recommended Solder Pattern Layout 6.5.04.8 6.80.50 3.07 UNIT: mm A c A c H DETAIL "C" L P E L D Symbol Inches Millimeters Min Nom Max Min Nom Max A 0.085 0.090 0.095.6.9.4 A 0 0.003 0.005 0 0.08 0.3 b 0.05 0.030 0.035 0.64 0.76 0.89 b3 0.95 0.00 0.5 4.95 5.08 5.46 c 0.08 0.00 0.04 0.46 0.5 0.6 C 0.08 0.03 0.035 0.46 0.8 0.89 D 0.35 0.40 0.45 5.97 6.0 6. D 0.05 - - 5. - - E 0.50 0.60 0.65 6.35 6.60 6.73 E 0.70 - - 4.3 - - e 0.090 BSC.9 BSC H 0.370 0.387 0.40 9.40 9.83 0.4 L 0.040 0.045 0.050.0.4.7 L 0.00 BSC 0.5 BSC L3 0.035-0.050 0.89 -.7 L4 0-0.006 0-0.5 P 0-8 0-8 Part Numbering and Marking System Packing Options SICSD065C06 L F YYWWX ZZZZZZ-ZZ SIC = SiC Diode = Gen SD = Schottky Diode 065 = Voltage Rating (650 V) C = TO-5-L (DPAK) 06 = Current Rating (6 A) YY = Year WW = Week X = Special code ZZZZZZ-ZZ = Lot Number Part Number Marking Packing Mode M.O.Q LSICSD065C06A SICSD065C06 Tape and Reel 500 08 Littelfuse, Inc. Revised: 0/07/9
Carrier Tape & Reel Specification TO-5-L (DPAK) Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, Components intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 08 Littelfuse, Inc. Revised: 0/07/9
LSICSD065C08A, 650 V, 8 A, TO-5-L (DPAK) LSICSD065C08A 650 V, 8 A SiC Schottky Barrier Diode Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 75 C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features AEC-Q0 qualified Positive temperature coefficient for safe operation and ease of paralleling 75 C maximum operating junction temperature Excellent surge capability Extremely fast, temperature-independent switching behavior Dramatically reduced switching losses compared to Si bipolar diodes Circuit Diagram TO-5-L (DPAK) Applications Boost diodes in PFC or DC/DC stages Switch-mode power Solar inverters Industrial motor drives EV charging stations Uninterruptible power Environmental Littelfuse logo = conform Littelfuse HF logo = Halogen Free Littelfuse -free logo = -free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage RM - 650 V DC Blocking Voltage = 5 C 650 V T = 5 C 3 C Continuous Forward Current I F = 35 C 0.7 A = 50 C 8 Non-Repetitive Forward Surge Current I FSM = 5 C, T P = 0 ms, Half sine pulse 40 A Power Dissipation P Tot = 5 C 88 = 0 C 38 Operating Junction Temperature - -55 to 75 C Storage Temperature T STG - -55 to 50 C Soldering Temperature (reflow MSL) T sold - 60 C W 08 Littelfuse, Inc. Revised: 0/07/9