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1 SiC POWER MODULES

2 Innovative Power Devices for a Sustainable Future Traction, industrial equipment, building facilities, electric vehicles, renewable energies, home appliances... Power devices are a key component in power electronics products for contributing to the realization of a low-carbon society. ttracting attention as the most energy-efficient power device is one made using new material, silicon-carbide (SiC). The material characteristics of SiC have led to a dramatic in power loss and significant energy savings for power electronics devices. Mitsubishi Electric began the development of elemental SiC technologies in the early 1990s and has since introduced them to achieve practical energy-saving effects for products manufactured using SiC. Innovative SiC power modules are contributing to the realization of a low-carbon society and more affluent lifestyles. SiC: Silicon Carbide-Compound that fuses silicon and carbon at a ratio of one-to-one. Traction Size and weight of traction inverters reduced Regenerative performance enhanced Noise reduced Home appliances Energy savings increased Cooling system more compact Equipment more compact/thinner Industrial equipment High torque, high speed, size reduced Cooling system more compact Manufacturing productivity enhanced Merits of Incorporating SiC Power Modules Electric/Hybrid vehicles Power loss reduced Cooling system more compact Regenerative power used efficiently Renewable energies Energy conversion efficiency improved Passive components downsized Quieter high-speed operation Building facilities Power loss reduced Greater layout freedom as the result of smaller equipment 1

3 SiC with superior characteristics Source n p + Si Gate n - Current flow Source n + p Si substrate Drain electrode Si MOSFET structure Source n p + SiC Gate SiC substrate Drain electrode SiC MOSFET structure 1 10 n - Large in electrical resistance Source n + p SiC Band gap Conduction band Band gap is approx. 3 times that of Si Valence band High temperature Power loss reduced SiC has approximately 10 times the critical breakdown strength of silicon. Furthermore, the drift layer that is a main cause of electrical resistance is one-tenth of the thickness. This allows a large in electrical resistance and, in turn, reduces power loss. This SiC characteristic enables dramatic s in conductivity loss and switching loss in power devices. High-temperature operation When the temperature increases, electrons are exited to the conduction band and the leakage current increases. t times, this results in abnormal operation. However, SiC has three times the band gap width of silicon, preventing the flow of leakage current and enabling operation at high temperatures. Si SiC Hybrid SiC power modules Turn-on switching waveform High-speed switching operation realized Ic:500/div Vce:250V/div Si SiC Thermal conductivity rate is approx. 3 times that of Si t:1μs/div High-speed switching operation With SiC, owing to the high dielectric breakdown, power loss is reduced and high-voltage is easier to achieve, it is possible to use Schottky Barrier Diodes (SBDs), which cannot be used with Si. SBDs can realize high-speed switching motion because they don't have accumulation carriers. s a result, high-speed switching can be realized. Heat dissipation SiC has three times the heat conductivity of silicon, which improves heat dissipation. SiC power modules appropriated by application pplication Industrial equipment Traction Home appliances Hybrid SiC-IPM Product name Full SiC-IPM Full SiC-IPM for PV pplications Full SiC Power Modules Hybrid SiC Power Modules for High-frequency Switching pplications Large Hybrid SiC DIPIPM TM for PV pplication Hybrid SiC Power Modules Super-mini Full SiC DIPIPM TM Super-mini Hybrid SiC DIPPFC TM Super-mini Full SiC DIPPFC TM Model PMH200CS1D060 PMH5CL10 PMF5CL10 PMF5B4L1060 FMF400BX-24 FMF800DX-24 CMH100DY-24NFH CMH150DY-24NFH CMH200DU-24NFH CMH300DU-24NFH CMH400DU-24NFH CMH600DU-24NFH PSH50Y26 CMH00DC-34S PSF15S92F6 PSH20L916- PSF20L916- Rating Voltages[V] Current[] rms Connection 6 in 1 6 in 1 4 in 1 4 in 1 2 in 1 2 in 1 4 in 1 2 in 1 6 in 1 Interleaved States Sample available Sample available Sample available Insert pages P3 P4 P5 P6 P Terminology SiC Silicon Carbide IPM Intelligent Power Module DIPIPM Dual-In-Line Package Intelligent Power Module DIPPFC Dual-In-Line Package Power Factor Correction SBD Schottky Barrier Diode MOSFET Metal Oxide Semiconductor Field Effect Transistor IGBT Insulated Gate Bipolar Transistor Tr Transistor FWD-SW FWD-DC Tr-SW Tr-DC IGBT-SW IGBT-DC PV CSTBT Diode switching loss Diode DC loss Transistor switching loss Transistor DC loss IGBT switching loss IGBT DC loss Photovoltaics Mitsubishi Electric s unique IGBT that makes use of the carrier cumulative effect 2

4 600V/200 Hybrid SiC-IPM for Industrial Equipment PMH200CS1D060 SiC-SBD incorporated in an IPM with a built-in drive circuit and protection functions Power loss of approx. 20% contributes to enhancing the performance of industrial machinery Hybrid combination of SiC-SBD and IGBT with current and temperature sensors implemented for IPM supplies high functionality and low loss enabling high torque and motor speed Recovery loss (Err) reduced by 95% compared to the conventional product* Package compatible with the conventional product* making replacement possible * Conventional product: Mitsubishi Electric S1 Series PM200SC1D060 Internal circuit diagram : SiC-SBD IGBT_SW IGBT_DC P U V W 20% N Si-IPM Hybrid SiC-IPM Condition:Vcc=300V, Io=85rms, fc=15khz, VD=15V,P.F=1, Modulation=1, Three-phase modulation, Tj=5 C 00V/5 Hybrid/Full SiC-IPM for Industrial Equipment PMH5CL10/PMF5CL10 Sample available Built-in drive circuit and protection functions realize high functionality Incorporates SiC-MOSFET with current sensor and built-in drive circuit and protection functions to deliver high functionality Significant in power loss compared to the conventional product* Package compatible with the conventional product* * Conventional product: Mitsubishi Electric IPM L1 Series PM5CL10 Main specifications Rating Mounted Functions 00V/5 6in1 Built-in drive circuit Under-voltage protection Short-circuit protection Over-temperature protection (Monitoring IGBT chip surface) Internal circuit diagram :SiC-MOSFET :SiC-SBD Tr_SW Tr_DC P Full SiC-IPM U V W SiC-MOSFET with current sense terminal Gate Drain 25% 0% Sense Source Si-IPM Hybrid SiC-IPM Full SiC-IPM N Condition:Vcc=600V, Io=31rms (assuming a 15kW inverter), fc=15khz, P.F=0.9, Modulation=1, Three-phase modulation, Tj=5 C 3

5 600V/5 Full SiC-IPM for PV pplications PMF5B4L1060 Sample available Improved power conversion efficiency and high-frequency drive enable reactor size to be reduced Incorporates SiC-MOSFET with current sensor, built-in drive circuit and protection functions to deliver higher functionality Power loss reduced approx. 50% compared to conventional product* Improved power conversion efficiency and high-frequency drive enable reactor size to be reduced Package compatible with conventional product* Internal circuit diagram :SiC-MOSFET Main specifications Rating Functions incorporated * Conventional product: Mitsubishi Electric IPM PM5B4L060 :SiC-SBD 600V/5 4-in-1 Built-in drive circuit Under-voltage protection Short-circuit protection Tr_SW Tr_DC P SiC-MOSFET with current sense terminal U V Gate Drain 50% N Sense Source Si-IPM Full SiC-IPM Conditions : Vcc=300V, fc=20khz, Io=2.5rms, P.F=1, Modulation=1, Tj=5 00V/400 00V/800 Full SiC Power Modules for Industrial Equipment FMF400BX-24/FMF800DX-24 Contributes to reducing size/weight of industrial-use inverters with the mounting area reduced by approx. 60% Power loss reduced approx. 0% compared to the conventional product* Low-inductance package adopted to deliver full SiC performance Contributes to realizing smaller/lighter inverter equipment by significantly reducing the package size and realizing a mounting area approx. 60% smaller compared to the conventional product* *Conventional product:mitsubishi Electric CM400DY-24NF(00V/400 2in1) 2pcs Product lineup Tr_SW Tr_DC pplications Rated voltage Reted current Circuit configration Package size (D W) 00V/800 Full SiC Power module Industrial equipment 00V Comparison with conventional product package in-1 2-in mm Si power module 00V/400(2-in-1) 2pcs 0% 60% Footprint Full SiC power module 00V/400(4-in-1) 1pcs or 00V/800(2-in-1) 1pcs IGBT module(si) Full SiC module Condition:Vcc=600V, Io=222rms (assuming a 110kW inverter), fc=15khz, P.F=0.8, Modulation=1, Three-phase modulation, Tj=5 C 4

6 Hybrid SiC Power Modules for High-frequency Switching pplications For optimal operation of power electronics devices that conduct high-frequency switching Power loss of approx. 40% contributes to higher efficiency, smaller size and weight of total system Suppresses surge voltage by reducing internal inductance Package compatible with the conventional product* * Conventional product: Mitsubishi Electric NFH Series IGBT Modules Product lineup pplications Industrial equipment Model CMH100DY-24NFH CMH150DY-24NFH CMH200DU-24NFH CMH300DU-24NFH CMH400DU-24NFH CMH600DU-24NFH Rated voltage 00V Rated current Circuit configuration 2-in-1 External size ( D x W ) 48 94mm 48 94mm mm mm mm mm Recovery waveform (FWD) Tr_SW Tr_DC CM600DU-24NFH (Si-IGBT) CMH600DU-24NFH (Hybrid SiC) 200ns/div IE:100/div CM600DU-24NFH (Si-IGBT) CMH600DU-24NFH (Hybrid SiC) Condition:Vcc=600V, Io=600p, fc=15khz, P.F=0.8, Modulation=1, Three-phase modulation, Tj=5 C 40% 600V/50 Large Hybrid SiC DIPIPM TM for PV pplications PSH50Y26 More efficient power modules for PV power conditioner applications Hybrid structure achieved with SiC Schottky barrier diode and th-generation IGBT chips Power loss of approx. 25% compared to the conventional product* Helps downsize PV inverter system thanks to modified short-circuit protection scheme *Conventional product:mitsubishi Electric Large DIPIPM TM PS6199 Internal circuit diagram :SiC-SBD IGBT_SW IGBT_DC VN1 VN WN FO VNC LVIC CFO VVP1 VP VVPC CIN LVIC VSC VWP1 WP VWPC LVIC P V W N W N V Power Loss [W] Si DIPIPM TM Hybrid SiC DIPIPM TM Condition:Vcc=300V, Io=25rms, P.F=0.8, fc=10khz, Tj=5 25% 5

7 100V/00 Hybrid SiC Power Modules for Traction Inverters CMH00DC-34S High-power/low-loss/highly reliable modules appropriate for use in traction inverters Power loss reduced approximately 30% compared to the conventional product* Highly reliable design appropriate for use in traction Package compatible with the conventional product* * Conventional product: Mitsubishi Electric Power Module CM00DC-34N Main specifications Module C C Max.operating temperature Isolation voltage Collector-emitter saturation voltage Switching loss 850V/00V turn-on turn-off Emitter-collector voltage Capacitive charge 150 C 4000Vrms 2.3V 140mJ 390mJ 2.3V 9.0μC Internal circuit diagram :SiC-SBD IGBT_SW IGBT_DC E1 G1 Si-IGBT 4 2 (E1) C2 G2 Si-IGBT (C2) 30% C1 E2 (C1) 3 1 (E2) CM00DC-34N CMH00DC-34S Condition:Vcc=850V, Io=600rms, fc=1khz, P.F=1, Modulation=1, Three-phase modulation, Tj=5 C 600V/15 Super-mini Full SiC DIPIPM TM for Home ppliances PSF15S92F6 NEW Contributes to extremely high power-efficiency in air conditioners, and easily applicable to industrial equipment SiC-MOSFET achieves in ON resistance, power loss reduced approx. 0% compared to conventional product* Construct low-noise system by reducing recovery current Numerous built-in functions: Bootstrap diode for power supply to drive P-side, temperature information output, etc. Unnecessary minus-bias gate drive circuit using original high Vth SiC-MOSFET technology s package and pin layout compatibility with conventional products* is ensured, simply replace with this product to improve performance *Conventional product: Mitsubishi Electric Super-mini DIPIPM Series Internal block diagram Di_SW Di_DC Tr_SW Tr_DC LVIC HVIC Module power loss [W] 0% NW NV NU W V U P Si DIPIPM TM Full SiC DIPIPM TM Vcc=300V, VD=15V(Si),18V(SiC), fc=15khz, P.F=0.95, Modulation=0.8, Io=1.5rms, Tj=5 6

8 Super-mini Hybrid / Full SiC DIPPFC TM for Home ppliances PSH20L916- / PSF20L916- Utilizing SiC enables high-frequency switching and contributes to reducing the size of peripheral components Incorporating SiC chip in the Super-mini package widely used in home appliances The SiC chip allows high-frequency switching (up to 40kHz) and contributes to downsizing the reactor, heat sink and other peripheral components dopts the same package as the Super mini DIPIPM TM to eliminate the need for a spacer between the inverter and heat sink, and to facilitate its implementation Internal block diagram (Full SiC DIPPFC TM ) :SiC-MOSFET :SiC-SBD Tr_SWoff Tr_SWon Tr_DC VD Vin1 Vin2 Fo CFo GND LVIC P1 P2 L1 L2 N2 45% Cin1 Cin2 N1 Si DIPPFC Full SiC DIPPFC Condition:Vin=240Vrms, Vout=30V, Ic=20rms, fc=40khz, Tj=5 C Interleaved PFC circuit configuration (for Hybrid SiC DIPPFC TM ) :SiC-SBD Hybrid SiC DIPPFC VD Vin1 P1 P2 L1 High-frequency drive enables reactor size to be reduced MCU Vin2 Fo CFo LV IC Si-IGBT L2 N2 C input GND N1 + To inverter part PFC circuit and drive IC integrated making it possible to reduce size including smaller mounting area and simplified layout pattern Merits of combined use of SiC DIPIPM TM and DIPPFC TM Interleave PFC circuit in the case of discrete element configuration In the case of using SiC DIPIPM TM and DIPPFC TM configuration High adjustment spacer Di Tr Di Tr DIPIPM TM SiC DIPPFC TM DIPIPM TM PFC control and protection circuit parts Merit 1 No need to use spacer for adjusting height when attaching heat sink Merit 2 Integration of PFC circuit and drive IC made it possible to reduce the mounting area and make components more compact such as simplifying the wiring pattern

9 SiC Power Module Lineup 600V/200 Hybrid SiC-IPM for Industrial Use PMH200CS1D M4 NUT SCREWING DEPTH.5 Hybrid SiC Power Modules for High-frequency Switching pplications CMH100DY-24NFH CMH150DY-24NFH 00V/5 Hybrid/Full SiC-IPM for Industrial Equipment PMH5CL10/PMF5CL10 600V/5 Full SiC-IPM for PV pplications PMF5B4L1060 Hybrid SiC Power Modules for High-frequency Switching pplications CMH 200DU-24NFH CMH 300DU-24NFH 00V/400,00V/800 Full SiC Power Modules for Industrial Use FMF400BX-24 FMF800DX-24 Hybrid SiC Power Modules for High-frequency Switching pplications CMH 400DU-24NFH CMH 600DU-24NFH Unit:mm Tc measured point 93± (8.5) ±0.25 (8.5) 80±0.25 TB#110, t= V/50 Large Hybrid SiC DIPIPM TM for PV pplications PSH50Y26 100V/00 Hybrid SiC Power Modules for Traction Inverters CMH00DC-34S 130±0.5 5±0.25 5± M8 NUTS ±0.1 30±0.2 4± ±0.5 6-M4 NUTS SCREWING DEPTH MIN.. 16±0.2 18±0.2 40±0.2 44±0.2 53±0.2 5± ± ±0.2 6-φ MOUNTING HOLES SCREWING DEPTH MIN ± V/15 Super-mini Full SiC DIPIPM PSF15S92F6- Super-mini Hybrid / Full SiC DIPPFC PSH20L916- / PSF20L916- Long ±0.2 (2.2) 18 2-R1.6 38±0.5 20x1.8(-35.56) 35± Type name Lot No. 3MIN ±0.5 (1) ±0.2 14x2.54(-35.56) C ± ± LBEL φ 5.5 MOUNTING HOLES 2-R M5 NUTS (SCREWING DEPTH) φ MOUNTING HOLES *Tentative No. (20.5) 13 4-φ5.5 MOUNTING HOLES (3) ± ± (21.14) 6-M6 NUTS (9) φ6.5MOUNTING HOLES LBEL M5 NUTS M6 NUTS 4-φ6.5 MOUNTING HOLES LBEL 4 TB#110, t= ± (22.2) 9.25 (10) 4-φ6.5 MOUTING HOLES 3-M6 NUTS LBEL (9) ± TB#110. t=0.5 B B B B = 2.54±0.3 B = 5.08±0.3 B B ( ) 2.54± ± ±0.3 10±0.3 10±0.3 10±0.3 10±0.3 10± ±0.3 9 ± Type name, Lot No ø4.5±0.2 HET SINK SIDE 5.5±0.5 8

10 Development of Mitsubishi Electric SiC Power Devices and Power Electronics Equipment Incorporating Them Mitsubishi Electric began developing SiC as a new material in the early 1990s. Pursuing special characteristics, we succeeded in developing various elemental technologies. In 2010, we commercialized the first air conditioner in the world equipped with a SiC power device. Furthermore, substantial energy-saving effects have been achieved for traction and F machinery. We will continue to provide competitive SiC power modules with advanced development and achievements from now on January 2010 Developed large-capacity power module equipped with SiC diode January 2011 Verified highest power conversion efficiency *1 for solar power generation system power conditioner (domestic industry) Early1990s Developed new material, silicon-carbide (SiC) power semiconductor, maintaining a lead over other companies 2000s Developed various elemental technologies October 2010 Launched "Kirigamine" inverter air conditioner October 2011 Commercialized SiC inverter for use in railcars 2006 January 2006 Successfully developed SiC inverter for driving motor rated at 3.kW 2009 February 2009 Verified 11kW SiC inverter, world's highest value *1 with approx. 0% in power loss 20 March 20 Developed motor system with built-in SiC inverter *2 November 2009 Verified 20kW SiC inverter, world's highest value *1 with approx. 90% in power loss September 20 Verified built-in main circuit system for railcars 9 Development of these modules and applications has been partially supported by Japan's Ministry of Economy, Trade and Industry (METI) and New Energy and Industrial Technology Development Organization (NEDO).

11 2014 February 2014 Developed EV motor drive system with built-in SiC inverter *2 May 2014 Began shipping samples of hybrid SiC power modules for high-frequency switching applications Contributing to the realization of a low-carbon society and more affluent lifestyles 2016 November 2014 Launched Large Hybrid SiC DIPIPM TM for PV pplications pril 2016 Launched Super-mini Full SiC DIPIPM May 2016(Tentative) Launched package air conditioners with full SiC DIPIPM TM in Japan 2015 January 2015 Launched power conditioner for PV equipped with full SiC-IPM June 2015 Railcar traction system with full SiC power modules installed in Shinkansen bullet trains July 20 Began shipping samples of hybrid SiC power modules 2013 February 2013 Developed SiC for application in elevator control systems *2 February 2013 Developed technologies to increase capacities of SiC power modules *2 December 20 Launched CNC drive unit equipped with SiC power module March 2013 Delivered auxiliary power supply systems for railcars May 2013 Launched SiC power modules December 2013 Launched railcar traction inverter with full SiC power module *1 Researched in press releases by Mitsubishi Electric. *2 Currently under development, as of pril * The year and month listed are based on press releases or information released during the product launch month in Japan. 10

12 SiC POWER MODULES Please visit our website for further details. HG-802C FU-1604 Printed in Japan <IP> Revised publication, effective pr Superseding publication of HG-802C May Specifications subject to change without notice. 2016