Uni- and Bipolar Hall IC Switches for Magnetic Field Applications TLE 4905 L; TLE 4935 L; TLE L; TLE 4945 L; TLE L.
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1 Uni- and ipolar Hall IC Switches for Magnetic Field Applications TLE 495 L; TLE 495 L; TLE 495- L; TLE 4945 L; TLE 4945-L ipolar IC Features Temperature compensated magnetic performance Digital output signal For unipolar and alternating magnetic fields Large temperature range Protection against reversed polarity Output protection against electrical disturbances P-SSO-- Type Ordering Code Package TLE 495 L Q7-A9 P-SSO-- TLE 495 L Q7-A9 P-SSO-- TLE 495- L Q7-A94 P-SSO-- TLE 4945 L Q7-A9 P-SSO-- TLE 4945-L on request P-SSO-- TLE 495/5/5-/45 L (Unipolar/ipolar Magnetic Field Switches) have been designed specifically for automotive and industrial applications. Reverse polarity protection is included on-chip as is output protection against negative voltage transients. Typical applications are position/proximity indicators, brushless DC motor commutation, rotational indexing etc. Semiconductor Group
2 TLE 495 L; TLE 495 L; Pin Configuration (view on branded side of component).8 ±.5 Center of sensitive area.5 ±.5 GND Q AEP4 Figure Pin Definitions and Functions Pin No. Symbol Function Supply voltage GND Ground Q Output Semiconductor Group
3 TLE 495 L; TLE 495 L; Circuit Description The circuit includes Hall generator, amplifier and Schmitt-Trigger on one chip. The internal reference provides the supply voltage for the components. A magnetic field perpendicular to the chip surface induces a voltage at the hall probe. This voltage is amplified and switches a Schmitt-trigger with open-collector output. A protection diode against reverse power supply is integrated. The output is protected against electrical disturbances. Threshold Generator Hall- Generator Q V Ref Amplifier Schmitt- Trigger GND Output Stage AE4 Figure lock Diagram Semiconductor Group
4 TLE 495 L; TLE 495 L; Functional Description Unipolar Type TLE 495 (figure and 4) When a positive magnetic field is applied in the indicated direction (figure ) and the turn-on magnetic OP is exceeded, the output of the Hall-effect IC will conduct (Operate Point). When the current is reduced, the output of the IC turns off (Release Point; figure 4). Ι randed Side + S N V Q + - AES Figure Sensor/Magnetic-Field Configuration OP RP Induction t V Q V QH Output Voltage V QL t AED4 Figure 4 Switching Characteristics Unipolar Type Semiconductor Group
5 TLE 495 L; TLE 495 L; Functional Description ipolar Type TLE 495/5-/45 (figure 5 and ) When a positive magnetic field is applied in the indicated direction (figure 5) and the turn-on magnetic OP is exceeded, the output of the Hall-effect IC will conduct (Operate Point). When a reverse magnetic field is generated, the output of the IC turns off (Release Point; figure ). Ι randed Side + S N V Q + - AES Figure 5 Sensor/Magnetic-Field Configuration OP RP t Induction V Q V QH Output Voltage V QL Figure Switching Characteristics ipolar Type t AED4 Semiconductor Group
6 TLE 495 L; TLE 495 L; Absolute Maximum Ratings = 4 to 5 C Parameter Symbol Limit Values Unit Remarks min. max. Supply voltage 4 V Supply voltage 4 V t < 4 ms; ν =. Output voltage V Q V Output current I Q ma Output reverse current I Q ma Junction temperature 4 5 C Junction temperature 7 C h Junction temperature C 4 h Storage temperature T stg 5 5 C Thermal resistance R th JA 9 K/W Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Operating Range Parameter Symbol Limit Values Unit Remarks min. max. Supply voltage.8 4 V Junction temperature 4 5 C Junction temperature 4 7 C thresholds may exceed the limits Note: In the operating range the functions given in the circuit description are fulfilled. Semiconductor Group
7 TLE 495 L; TLE 495 L; AC/DC Characteristics.8 V 4 V; 4 C 5 C Parameter Symbol Limit Values Unit Test Condition Test Circuit min. typ. max. Supply current Output saturation voltage Output leakage current I SHigh I SLow Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at = 5 C and the given supply voltage. ma ma < RP > OP V QSat.5.5 V I Q = 4 ma I QL µa V Q = 4 V Rise/fall time t r /t f µs R L =. kω C L pf Semiconductor Group
8 TLE 495 L; TLE 495 L; Magnetic Characteristics.8 V 4 V Parameter Symbol Limit Values Unit TLE 495 unipolar TLE 495 TLE 495- TLE 4945 TLE min. max. min. max. min. max. min. max. min. max. Junction Temperature = 4 C Turn-ON Turn-OFF Hysteresis ( OP - RP ) OP RP HY Junction Temperature = 5 C Turn-ON Turn-OFF Hysteresis ( OP - RP ) OP RP HY Junction Temperature = 85 C Turn-ON Turn-OFF Hysteresis ( OP - RP ) OP RP HY Semiconductor Group
9 TLE 495 L; TLE 495 L; Magnetic Characteristics (cont d).8 V 4 V Parameter Symbol Limit Values Unit TLE 495 unipolar TLE 495 TLE 495- TLE 4945 TLE min. max. min. max. min. max. min. max. min. max. Junction Temperature = 5 C Turn-ON Turn-OFF Hysteresis ( OP - RP ) OP RP HY Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at = 5 C and the given supply voltage. Semiconductor Group
10 TLE 495 L; TLE 495 L; + - R L 4.7 nf Ι S GND TLE 495/5/5-/45- C L Ι Q Q AES44 Unipolar Type TLE 495 ipolar Type TLE 495 V Q V Q V QH V QH V QL V QL RP OP RP OP HY HY AED4 V Q V QH.9 V QH. V QH t r t f t AED4 Figure 7 Test Circuit Semiconductor Group
11 TLE 495 L; TLE 495 L; Mainframe Line Sensor 4.7 nf Signal. kω 4.7 nf GND Q TLE 495/5/5-/45- AES47 Figure 8 Application Circuit Semiconductor Group
12 TLE 495 L; TLE 495 L; Quiescent Current versus Supply Voltage Quiescent Current versus Junction Temperature 8 AED48 8 AED49 Ι S Ι S ma V Q = High ma V Q = High 4 = -4 C 4 = 4 V = 5 C =.8 V 5 5 V 5 Quiescent Current Difference versus Temperature -5 5 C Saturation Voltage versus Output Current. AED459. AED4 Ι S ma.75 Ι = Ι - Ι S SLow Ι Q = 4 ma SHigh V Q V..8.8 V _<V S _< 4 V.5. = 5 C.4.5. = -4 C C 4 ma Ι Q Semiconductor Group
13 TLE 495 L; TLE 495 L; TLE 495 Operate-and Release-Point versus Junction Temperature TLE 495 Hysteresis versus Junction Temperature 5.8 V _<V S _< 4 V AED V _<V S _< 4 V AED4 OPmax 5 HYmax RPmax OPtyp RPtyp 4 HYtyp 5 OPmin HYmin RPmin -4 5 C T j -4 5 C T j TLE 495 Operate-and Release-Point versus Junction Temperature TLE 495- Operate-and Release-Point versus Junction Temperature.8 V _<V S _< 4 V AED4.8 V <_V < _ S 4 V AED4 OPmax OPtyp OPmax OPtyp OPmin OPmin - RPmax RPmax - RPtyp - RPtyp - -4 RPmin 5 C T j RPmin C Semiconductor Group
14 TLE 495 L; TLE 495 L; TLE 4945 Operate-and Release-Point versus Junction Temperature TLE Operate-and Release-Point versus Junction Temperature AED45 8 AED5.8 V <_V < _ S 4 V.8 V <_V < _ S 4 V OPmax OPmax - RPmax OPtyp RPtyp OPmin RPmin - RPmax OPtyp RPtyp OPmin RPmin C C Semiconductor Group
15 TLE 495 L; TLE 495 L; Package Outline P-SSO-- (Plastic Single Small Outline Package) GPO558 Exterior Packaging I.e. tubes, trays, boxes are shown in our Data ook Package Information. Dimensions in mm Semiconductor Group
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