Grid Applications Topologies and Semiconductors Prof. Dr.-Ing. Marc Hiller ELECTROTECHNICAL INSTITUTE (ETI) KIT The Research University in the Helmholtz Association www.kit.edu
The Electrical Drives and Power Electronic Systems System architecture Components Devices R n idn,w(k) ufdn,s(k+1) îdn,x(k) L n L n îqn,x(k) iqn,w(k) ufqn,s(k+1) R n Competencies Control Simulation and Signal processing Electrical and thermal converter design & calculation Qualification of LV/MV power semiconductors Topology design (power and control) Control algorithms for grid and motor applications / Software development Prototyping: Design, Manufacturing, Test Test setup design and prototype verification 3 16.0.017 Prof. Dr.-Ing. Marc Hiller Performance
Overview Trends and Challenges Power Semiconductors for MV Converters LV & MV Converter Topologies Application examples Conclusion 4 16.0.017 Prof. Dr.-Ing. Marc Hiller
Trends and Challenges Auxiliary services Today: centralized TSO 380kV/0kV Future: de-centralized Auxiliary services TSO 380kV/0kV Large central power plants DSO 110/0/0,4kV Area power plant DSO 110/0/0,4kV In future: the auxiliary services have to be provided by area power plants 5 16.0.017 Prof. Dr.-Ing. Marc Hiller
Trends and Challenges In the past all major power plants were connected to the transport network operated by the TSO Now wind parks and solar plants are connected to the distribution grid of the DSO Solar mainly in the LV grid (70 % out of 40 GW) Wind mainly in MV and HV grid (approx. 48 GW) Paradigm shift: From unidirectional to fluctuating bidirectional power flows TSO 380/0kV G 110kV 10/0 kv 400V G GG G G GG DSO households 8 16.0.017 Prof. Dr.-Ing. Marc Hiller
Trends and Challenges AC for existing grid structures storage water treatment plant storage storage water treatment plant water treatment plant 9 16.0.017 Prof. Dr.-Ing. Marc Hiller
Trends and Challenges DC for new grid structures storage water treatment plant MVDC MVDC MVDC MVDC MVDC storage storage water treatment plant water treatment plant 10 16.0.017 Prof. Dr.-Ing. Marc Hiller
Trends and Challenges Installed power for electrical energy production in Germany (in GW) total: 195,09 GW as of 04.10.016 Nuclear Oil Bio mass 5,59 4,4 8,97 10,8 Hydro Solar Brown coal 1,14 40,0 Black coal 8,31 8,49 47,53 Wind thereof 3,89 GW offshore Gas Source: https://www.energy-charts.de/power_inst_de.htm, Bundesnetzagentur 11 16.0.017 Prof. Dr.-Ing. Marc Hiller
Trends and Challenges Electrical energy production in Germany 016 (in TWh) Total: 648, TWh Nuclear 150 Oil 5,8 84,9 Others 7,5 191,4 Solar Renewables 9,5 % Bio mass 38,3 45,6 Waste 6,1 1,5 Hydro 66,8 13 Wind onshore Wind offshore Brown coal 110 78,5 Gas Black coal Source: http://www.ag-energiebilanzen.de/8-0-zusatzinformationen.html 1 16.0.017 Prof. Dr.-Ing. Marc Hiller
Trends and Challenges Aims of the German Energiewende Upgrade of transmission grid 35% of electric power from Renewables Shutdown of all nuclear power stations 50% of electric power from Renewables 80% of electric power from Renewables 50% reduction of primary energy consumption (compared to 008) 80-95% reduction of greenhouse gas emissions (compared to 1990) 00 030 040 050 13 16.0.017 Prof. Dr.-Ing. Marc Hiller
Trends and Challenges The Energy transition (Energiewende) leads to More decentralized and distributed energy production, More Wind- and PV-Power Plants and Energy storage connected to the LV (<1kV), MV (<40kV) and HV grid New requirements for Power Electronics in order to ensure grid stability (frequency control, voltage control, grid restoration, system & operation management) In addition to HVDC systems new developments also address MV applications with enhanced features, efficiency and reliability. New circuit topologies and power semiconductors enable promising solutions to replace or enhance the performance of conventional systems. Power Electronics and Digitalization are key enablers 14 16.0.017 Prof. Dr.-Ing. Marc Hiller
max. turn-off current [ka] Si-based Power Semiconductors for MV Converters MV IGBT / IGCT Ideal Power Semiconductor: 5 source: ABB Costs: like 100/1700V in terms of [EUR/KW converter power] 4 3 LV IGBT source : Infineon source: Toshiba source : Infineon Thyristor source: Infineon Failure mode: Conduct-on-fail enabling better fault handling and (N+1) redundant systems Load cycling capability: like Press Pack package source : Infineon 1 1 3 4 5 6 7 8 Blocking voltage [kv] 15 16.0.017 Prof. Dr.-Ing. Marc Hiller
max. turn-off current [ka] Si/SiC-based Power Semiconductors for MV Converters MV IGBT / IGCT 5 source: ABB 4 LV IGBT Thyristor 3 source : Infineon source: Toshiba source : Infineon source : Infineon source: Infineon SiC MOSFET / IGBT Increased switching frequency Lower losses Higher power density 1 1 3 4 5 6 7 8 Blocking voltage [kv] 16 16.0.017 Prof. Dr.-Ing. Marc Hiller
Power Semiconductors for MV Converters - Si-IGBTs Automotive Low voltage Medium voltage Volume High volume applications Medium volume applications Low volume applications Voltage <1.kV 1. kv 3.3 kv 4.5 kv 6.5 kv 1.7 kv Market share * (only IGBT modules) 36 % 41 % 1 % 6 % % 3 % Housing Customized, Module Module Module and press-pack Available products Customized configurations with DCBs directly connected to heat sink and integrated drivers Integration Low integration costs for DC link Single switch, Half-bridge, Six Pack, Chopper module, 3-Level module at different voltage/current ratings with/without integrated drivers Moderate integration costs for busbars, DC link, heat sinks, (drivers) Single switch, Half-bridge, Diode-module at different voltage/current ratings High integration costs for isolation, busbars, DC link, heat sinks, drivers Major development trends Improved packaging (e.g. Enhanced load cycling capability, increased T Jmax ) Enhanced Si devices SiC, GaN devices for improved efficiency, higher f S, less passives, improved power density etc. Enhanced Si devices, e.g. Reverse Conducting IGBT SiC for special applications (e.g. traction) * Source: IHS Power Semiconductor Studies, 006-015 17 16.0.017 Prof. Dr.-Ing. Marc Hiller
LV Converter Topologies û 1, f 1 1 or 3ph AC/DC rectifier = = AC/AC converter = = DC/DC converter û, f 1 or 3ph U = DC/AC inverter = -U 19 16.0.017 Prof. Dr.-Ing. Marc Hiller
LV Converter Topologies û 1, f 1 1 or 3ph AC/DC rectifier = = u 3 variable AC/AC converter = = DC/DC converter û, f 1 or 3ph = DC/AC inverter = U 4 const. 0 16.0.017 Prof. Dr.-Ing. Marc Hiller
LV Converter Topologies Converters for Grid and Industrial Applications Low Voltage (LV) Converters Medium Voltage (MV) Converters Current Source Converters Voltage Source Converters Current Source Inverter (CSI) Matrix Converter -Level Multilevel ( 3L) NPC 3L-NPC 3L-TNPC Various 5L 1 16.0.017 Prof. Dr.-Ing. Marc Hiller
LV Converter Topologies -Level U a -Level-DC/AC-Converter: By far the most important topology up to U=690V Many power semiconductors available Trends: Higher switching frequency in order to reduce filter size Use of SiC-devices (future: also: GaN) Increase in power density Increased efficiency a) u a0 0 ωt b) 16.0.017 Prof. Dr.-Ing. Marc Hiller u a0 -
LV Converter Topologies Converters for Grid and Industrial Applications Low Voltage (LV) Converters Medium Voltage (MV) Converters Current Source Converters Voltage Source Converters Current Source Inverter (CSI) Matrix Converter -Level Multilevel ( 3L) NPC 3L-NPC 3L-TNPC Various 5L 3 16.0.017 Prof. Dr.-Ing. Marc Hiller
LV Converter Topologies -Level vs. 3-Level a) u a0 0 u a0 +1-1 s c u b0 +1 s b -1 +1 u c0 s c a b c u an u bn N u cn 0 ωt -1 - b) u a0 0 u a0 u b0 u c0 +1 s a 0-1 +1 s b 0-1 +1-1 s c 0 a b c u an u bn N u cn 0 - ωt 4 16.0.017 Prof. Dr.-Ing. Marc Hiller
MV Converter Topologies Medium Voltage (MV) Converters AC/AC Direct Converter DC link Converter Matrix Converter Cyclo Converter (Thyristor) Current Source Converters Voltage Source Converters Current Source Inverter (PWM-CSI) Load Commutated Inverter (LCI) Level Multilevel ( 3L) NPC Flying Cap (FC) Cell based Inverters (Split DC link) 3L-NPC 3L-TNPC 5L-ANPC 5L-SMC 4L-FC Modular Multilevel Converters Series Connected H-Bridge Converters 5 16.0.017 Prof. Dr.-Ing. Marc Hiller
MV Converter Topologies P Arm T11 Single module X X1 v Z1 X VX1 X1 T1 VSM + C - SM 4 V d L L L1 L v Z N 3L-NPC with n=1 3L-NPC with n= 5L-ANPC with n= und Floating Capacitor Example: Example: Example: =5 kv =10 kv =10 kv 5 levels in Lineto-line 5 levels 9 levels voltage Modular Multilevel Converter Example: =10 kv 17 levels 6 16.0.017 Prof. Dr.-Ing. Marc Hiller
MV Converter Topologies 3L-NPC & MMC 3L-NPC Modular Multilevel Converter (MMC) X V X1 Single module T 11 + V SM C - SM T 1 Motor 3~ P X1 X Arm X1 v Z1 Modular Multilevel Converter Modules can be operated independently from each other V d L L L1 L L3 Simple and easy series connection of modules enabling very high voltages (n=6..400) Use of state-of-the-art components independently from the voltage, e.g. v Z < 14 kvac: 1,7kV-IGBT-Modules; 1,kV-film caps > 14 kvac: 3,3kV-IGBT-Modules; kv-film caps N 7 16.0.017 Prof. Dr.-Ing. Marc Hiller
MV Converter Topologies 5L-NPP 4 4 4 5L-ANPC with n= and Floating Capacitor Example: =10 kv 9 levels in Lineto-line voltage 5L-NPP with n=4..6 ( stacked 3L-NPP) Example: =10 kv 9 levels Source: GE 8 16.0.017 Prof. Dr.-Ing. Marc Hiller
Power Semiconductors for MV Converters - Si-IGBTs Automotive Low voltage Medium voltage Volume High volume applications Medium volume applications Low volume applications Voltage <1.kV 1. kv 3.3 kv 4.5 kv 6.5 kv 1.7 kv Market share * (only IGBT modules) 36 % 41 % 1 % 6 % % 3 % Housing Customized, Module Module Module and press-pack Available products Customized configurations with DCBs directly connected to heat sink and integrated drivers Integration Low integration costs for DC link Single switch, Half-bridge, Six Pack, Chopper module, 3-Level module at different voltage/current ratings with/without integrated drivers Moderate integration costs for busbars, DC link, heat sinks, (drivers) Single switch, Half-bridge, Diode-module at different voltage/current ratings High integration costs for isolation, busbars, DC link, heat sinks, drivers Major development trends Improved packaging (e.g. Enhanced load cycling capability, increased T Jmax ) Enhanced Si devices SiC, GaN devices for improved efficiency, higher f S, less passives, improved power density etc. Enhanced Si devices, e.g. Reverse Conducting IGBT SiC for special applications (e.g. traction) * Source: IHS Power Semiconductor Studies, 006-015 9 16.0.017 Prof. Dr.-Ing. Marc Hiller
MV Converter Topologies Modular Multilevel Converter Application example: 1 MW network interconnection between 50 Hz onshore grid and 6,6/10 kv / 60 Hz ship grid featuring: 4-pulse diode front end Low harmonics with filterless design High control bandwidth Source: Siemens 30 16.0.017 Prof. Dr.-Ing. Marc Hiller
MV Converter Topologies Modular Multilevel Converter Application example: VSC based static frequency converter for the AC railway grid supply (<10MW) featuring Modular design, scalable voltage, i.e. power High efficiency High availability Low harmonics U e1 U e U a1 U a U a3 Power semiconductors: IGBT-modules with V CES =3,3-6,5 kv (single n=1) Press Pack-IGBT with V CES =4,5kV: future? Press Pack-IGCT: future? Advantages: Filterless, highly modular Lower costs due to standard (no) transformers Source: Siemens 31 16.0.017 Prof. Dr.-Ing. Marc Hiller
MV Converter Topologies Modular Multilevel Converter Application example: VSC based HVDC and SVC converters featuring Scalable voltage, i.e. power High efficiency High availability Low harmonics Power semiconductors: IGBT-modules with V CES =3,3-6,5kV (single n=1) Press Pack-IGBT with V CES =4,5kV (series conn. n=8) Press Pack-IGCT with V DRM =3,3..6,5..9kV Advantages: Filterless, highly modular Grid services (reactive power, black start etc.) Possible disadvantages: Higher losses compared to line commutated technology Source: Siemens, ABB 3 16.0.017 Prof. Dr.-Ing. Marc Hiller
MV Converter Topologies Modular Multilevel Converter Application example: VSC based HVDC converter for long distance energy transmission featuring Scalable voltage, i.e. power High efficiency High availability Low harmonics Power semiconductors: IGBT-modules with V CES =3,3-6,5 kv (single n=1) Press Pack-IGBT with V CES =4,5kV (series conn. n=6-8) Press Pack-IGCT: future? Advantages: Filterless, highly modular Grid services (reactive power, black start etc.) Disadvantages: Higher losses compared to line commutated HVDC Source: Siemens 33 16.0.017 Prof. Dr.-Ing. Marc Hiller
MV Converter Topologies Modular Multilevel Converter Application example: VSC based HVDC converter for long distance energy transmission featuring Scalable voltage, i.e. power High efficiency High availability Low harmonics Self-commutated HVDC transmission (Example: Sylwin1): DC-voltage: U=640 kv DC-current: I=1350 A P nom =865MW Topology Modular Multilevel Converter (MMC) with app. 000 cells per converter station (using 4,5kV-IGBT- Modules) Source: Siemens 34 16.0.017 Prof. Dr.-Ing. Marc Hiller
Conclusion / Outlook Trends: Future converter generations will have to meet market requirements based on common drive architecture and platform solutions in order to reduce complexity and material costs (e.g. power semiconductors, copper, steel) and maximize modularity. The high modularity and the usage of standard components (e.g. LV IGBTs, SiC devices) will enable worldwide manufacturing and sourcing Increased demand for AC (and DC) grid applications Multilevel Converters will be a key technology for applications in MVDs, Energy transmission & distribution, Regenerative energy sources Grid integration of renewable energy sources and storage devices, Energy transmission & distribution in the LV, MV and HV range, LV and MV Drives 35 01.0.017 Prof. Dr.-Ing. Marc Hiller