300mm Wafer Electroless Bumping

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Transcription:

300mm Wafer Electroless Bumping T. Teutsch, E. Zakel, T. Oppert Internepcon 2005 January 19, 2005 Tokyo Big Sight, Japan Pac Tech GmbH

Outline Short Company Profile Introduction Electroless Ni/Au Under Bump Metallization UBM for Copper Devices Solder Bumping: Stencil Printing & Ball Placement Wafer Level RDL Interface for Wirebonding Application Outlook: Stacking, Via Filling, Micro Ball Placement Summary

Corporate Profile PacTech GmbH & PacTech-USA Inc. Berlin (D) Dept. Equipment Development & Production Nauen (D) Dept. Bumping & Redistribution Service Santa Clara, CA (USA) Bumping Service & Equipment Sales Center Solder Ball Bumper: SB²-Jet, SB 2 -SM Flip Chip Placer: LAPLACE, MAPLACE Electroless Bumping Line PacLine 2000 Laser Wafer Marking System: LS 2 Electroless Ni/Au Bump Solder Stencil Printing Solder Ball Placement Wafer Sawing & Scribing Wafer Level RDL & CSP FC-Assembly Equipment Sales & Service Laser Microassembly & Equipment Demo Center Wafer Bumping Service Electroless Ni/Au Solder Stencil Printing Solder Ball Placement

Locations Worldwide Pac Tech USA Inc Santa Clara, CA Boston Sweden Finland Denmark Pac Tech GmbH Berlin/ Nauen Italy Israel Thailand Korea China Tokyo Fukui Taiwan Philippines Malaysia Singapore Facilities Distributor/ Rep. Office

Pac Tech Germany Production Site Berlin (Equipment Manufacturing)

Pac Tech Germany Production Site Nauen (HQ & Wafer Bumping Subcon. Service)

Pac Tech Germany Nauen - Cleanroom

PacTech-USA Bumping & Technology Services Equipment Sales: SB 2, Pacline, etc. Process Licensing & Technology Transfer Training & Support 10,000 ft 2 floorspace 2,000 ft 2 cleanroom class 10,000 328 Martin Avenue Santa Clara, CA 95050 Phone: 408-588-1925 www.pactech-usa.com

Worldwide Use of Electroles Ni & Solder bumping Distribution USA (30%) Europe (40%) Asia (30%) Implementation Status Production 50% Qualification 30% Prod. Ramp Up 20% Memory 12.5% Applications RFID 20% Pass. Comp./CSP's 20% MOSFET 10% LCD Driver 2.5% ASIC 22.5% Medical 12.5%

Introduction Low K Dielectric Performance Wafer Redistribution Solder Bumping: Low Alpha, Lead-free Wafer Size: 300mm, Tooling, Prototyping Copper Under Bump Metallization Wire Bondability Wafer Size: 300mm, Tooling, Prototyping Next Generation Stacking & Via Filling High I/0 count

Under Bump Metallization for 300mm Challenges: Process: Copper Pad Metallization, Organic Passivation Homogeneity Electroless Ni/Au UBM

Maskless Process (Simplicity) No Sputtering Low Initial Capital Investment Quality/Reliable/Proven Chemistries Suitable for Solder Bumping & Adhesives Half the Cost of Electrolytic Plating Wire bondable Electroless UBM Advantages Fastest and Most Cost Effective Method

Backside Coating Under Bump Metal Process Electroless Plating of Ni/Au Bumps Copper Cleaning (Oxides, CMP) Cu Paladium Pretreatment Electroless Nickel Immersion Gold Coating Removal

Electroless UBM Advantages Maskless Process (Simplicity) No Sputtering Low Initial Capital Investment Quality/Reliable/Proven Chemistries Suitable for Solder Bumping & Adhesives Wire bondable Interface Less cost than Electrolytic Plating Fastest and Most Cost Effective Method 150 Wafers / hour 4 12 Capability SECS GEM 300mm Handling SPC Sofware

Ni/Au Bump height measurements on a 12 Wafer UBM Height Measurements: 21 Areas Samples/Area 10 Sample Size: 210 Mean Value (mm): 9.71 3 Sigma (mm) ±0.41 Shear Force Values: 21 Areas Samples/Area 20 Sample Size: 420 Mean Value (g): 124 Sigma (g): ±15 300mm Wafer Production Lot

Distribution of Ni bump height on a 12 Wafer 60 Fraction [%] 50 40 30 20 Mean Value: 9.71 µm 3 Sigma: 0.49 µm 10 0-5 -4-3 -2-1 0 1 2 3 4 5 Height Variation [%]

Fully automated 300mm Equipment Concept PacLine 300 A50 High Troughput: 75 wafers/h Automated Cassette to Cassette Wafer Handling Wafer Drying SECS GEM Improved Wafer DI Water Rinse by US Activation High Speed Profibus Internal Communication

Pacline 300 - A 50 6 Bumping Systems in the Field

Solder Bumping Challenges: Low Alpha Lead-Free High I/0 Count Process: Stencil Printing Solder Ball Placement

Comparison of Solder Bumping Technologies Evaporated Solder Bump Sputtered UBM + Plating Sputtered UBM + Print (FCT) Electroless UBM (+) (+) Print or Ball Attach C4 Solder Solder Solder Solder Au Ni/Au

New Solder Bump Material Requirements Lead-Free Solders Ternary & Quaternary Alloy Systems => stencil printing or ball placement Type 6 & 7 Availability Design & Assembly Reflow & Flux Cleaning (Ultra) Low Alpha Availability Price Qualification / Certification SnAgCu Bumps

Stencil Solder Printing or Gang Solder Ball Placement Process Flow Electroless Ni/Au Bumping Solder Solder Paste (Flux) Printing (Solder Ball Attach) Reflow Cu Wafer Cleaning Wafer Inspection Pack & Ship

PbSn 63/37 vs. Lead-free Solders A Feasibility Study under Production Conditions Bump Yield (8 Wafer) Bump Yield Loss [ppm] SnAg4Cu0.5 Sn37Pb63 Wafer Type I 250um Pitch I/0 count: 30,000 0-55 0-110 Wafer Type II 225um Pitch I/0count:30,000 120-150 95-120 Bump Height Distribution: typ. +/- 10µm @ 3 Sigma slightly better for lead-free

Solder Bumping Roadmap Main Challenge: High Pad Count / Pad Density Stencil Printing Paste Material Stencil Technology Printer Accuracy Stencil Cleaning Solder Paste Transfer Yield Gang Ball Placement Micro Ball Placement Cost Equipment Availability Yield / Repair Inspection

Wafer Level Redistribution Challenges: Processes: Low-K Dielectric Layer Throughput / Speed Tooling => Low Cost (BCB) / Al / BCB Epoxy / Electroless Cu/ Epoxy Electroless Ni/Au UBM

Process Flow Overview - ElastoPAC Ni/Au - Bumping of Bond Pads Spinning of Dielectric Layer Epoxy / Cu / Epoxy Photo Imaging: Opening of Ni/Au Bond Pads Formation of Seed Layer Full Area Copper Deposition Solder PbSn Resist Spinning and Photo Structuring Soldermask Dielectricum Passivation Redistribution (Cu) Ni/Au-Bump Al-Pad Si Copper Etching Solder Mask Spinning and Photo Imaging Ni/Au - Bumping of Redistributed Pads Solder Stencil Printing or Ball Placement

Bumping Ni/Cu- Dielectricspinning+ structuring

2 nd Ni/Au-Bumping

Cu Wire Bonding Challenges: Other Solutions: Best Solution: Wire Bondability of Copper Pad Cu Wire Bonding => feasibility, reliability Al sputtering on Cu Pad => Cost Wire Bondable Low Cost Interface => Electroless Ni/Au

Au Wire Bonding on Electroless Ni/Au Layer Surface Treatment Ni/Au UBM Ar Plasma Cleaning/Activation Lowest Cost Acceptable Bond Window Process has to be optimized for thin Au layer Thick Au Finish Ni/Au UBM High Chemistry Cost Chemistry Performance Longer Processing Time Broad Bond Window Good Reliability Pd Layer Ni/Pd/Au UBM Broad Bond Window Reasonable Cost / Reliability Ratio Prototyping Status on Wafer-level

Thick Au Finish Au: 0.1µm -0.2µm Bond Parameter: Shear modes of Au Stud Bumps US-Time:140 ms US-Power: 150 mw Bond Force: 30 cn Stage Temperature: 100?C

Outlook New Applications: e.g. Die Stacking Requirements: Electroless Ni/Au UBM for Via Filling => Na free, low Phosphorous => Small Structure Plating Capability

Summary 300mm Capability Copper Pad Metalization already in production, cost effective bumping process & equipmet Excellent UBM Quality (height distribution) low cost process, no tooling, easy transferable (Al) Bumping Process for low K UBM and Solder (stencil printing or ball placement) Redistribution low cost, less tooling Wire Bonding cost, flexibility