Establishing the New Power Conversion Platform Transphorm, an innovative company making high-voltage GaN, is a leader in the business of developing and supplying Gallium Nitride (GaN) solutions for the electrical energy conversion industry
About Transphorm Transphorm was founded in 27 and emerged from stealth-mode in 211. Transphorm is a fastgrowing company, funded by high-profile investors, including Fujitsu, Kleiner Perkins, Caufield and Byers, Lux Capital, Foundation Capital, Google Ventures, Soros Fund Management, Quantum Strategic Partners, Innovation Network Corp. of Japan (INCJ), UKC Group, IIDA Electronics and Fujitsu. Transphorm is an internationally recognized leader in high-voltage GaN solutions. Transphorm dedicates itself to enabling highly-efficient and compact power conversion. Our Team Transphorm s founders, and the core engineering team collectively, have over 2 years direct experience and leadership in power and GaN semiconductors. Our team has pioneered the development of the earliest GaN transistors since 1994. The combined team brings unparalleled vertically integrated experience that includes GaN materials and devices, fabrication and testing, reliability and application engineering, product development, manufacturing and power industry knowledge. This vertical expertise guarantees the fastest response to customer needs and has generated a key IP position while delivering application specific power solutions aligned with customer requirements. Fumihide Esaka CEO. Former Executive President, NIEC - a power semiconductor company formed in 1957. International leadership, including Japan sales at International Rectifier (IR) Bret Daniels VP Sales. 2+ years in power semiconductor sales, business, marketing, applications and quality management at Fairchild and IR. Strategy development and business unit leadership in Industrial market segments Umesh Mishra, Ph.D. CTO, Co-Founder. Founder, Nitres (First GaN startup, acquired by Cree). National Academy of Engineering. Internationally recognized GaN expert, 2+ years Yifeng Wu, Ph.D. VP Product Development. 2+ years experience in GaN device design, circuits, reliability at Nitres, Cree. World-leading developments including First GaN Power RF device Primit Parikh, Ph.D. President, Co-Founder. Business area, P&L and technical GaN leadership at Cree, Nitres (First GaN startup). 2+ years GaN/semiconductor experience. Entrepreneurial, IP and technical marketing experience Scott Gibson CFO. 2+ years executive management leadership in semiconductor industry including KLA-Tencor and PLX. Diverse experience in scaling complex, high growth companies
Manufacturing and Quality Control Transphorm is one of the few fast-growing companies vertically -integrated with its own epitaxy and fab. This has enabled Transphorm to gain maximum design flexibility with fast design cycles as well as full control of manufacturing quality and reliability. Following the Nov. 213 business integration between Transphorm and Fujitsu Semiconductor Ltd s GaN power devices operation, we now have extended fab capability with high-volume production capacity in our Aizu-Wakamatsu exclusive foundry. Transphorm has implemented a state-of-the-art quality management system and is ISO 91:28 certified. All products are JEDEC qualified per standard JESD47. Transphorm is the only company to have demonstrated intrinsic lifetime capability of high-voltage GaN power devices. Electric field and temperature accelerated testing has proven over 1 million hours of life time at 6V (HVOS testing at over 1 volts at 15 C) and over 1 million hours of lifetime at 2 C junction temperature. HVOS and HTDC accelerated lifetime testing and associated MTTF 6V 48V Transphorm Proprietary and non Confidential
Transphorm Understands GaN Transphorm s GaN expertise and vertical integration enables us to quickly develop high-performance, reliable and robust products. We are the innovators of important strategic IP with over 4 international patents (issued/in prosecution) including the acquisition of Fujitsu s power GaN design, development and IP assets. Our patents enable all aspects of successfully commercializing GaN, including material growth, device structures, device fabrication methods, circuit applications, architectures, and packaging. Compared to other companies trying to develop GaN power solutions, Transphorm is:. The first to demo improvement in circuit performance over best-in-class Si devices in 211. The first to have an OEM solar power conditioner Powered by Transphorm TM GaN, launched by Yaskawa Electric for mass production in 215. The first to demo a high frequency, high efficiency motor drive/inverter application in 211. The first to qualify 6 V GaN on Silicon HEMTs in 213 and on Silicon modules in 214. The first to have solved the dynamic R ON problem from low to high voltage in 29. Recognized with Product of the Year Award for 213 by Electronic Products Magazine. Selected as 215 Clean Energy Awards Best Energy Efficiency Company TPH36PS/PD TPH32PS/PD TPH36LS/LD TPH32LS/LD TPH325WS Source Tab (PS) Source Dap (LS) Drain Tab (PD) Drain Dap (LD) Source Tab (WS) Package TO22 TO22 PQFN88 PQFN88 TO247 R DS(ON) Typ. (ohm).15.29.15.29.63 I D25 C (A) 17 9 17 9 34 C o(er) (pf) 56 36 56 36 17 C o(tr) (pf) 11 63 11 63 283 Q g (nc) 6.2 6.2 6.2 6.2 1 t rr (ns) 3 3 3 3 3 Q rr (nc) 54 29 54 29 138
Transphorm Devices Perform Well in Systems Compared to Silicon (Si) power devices, GaN power devices have much higher conductivity, lower capacitance, lower reverse charge and faster recovery time. With these superior characteristics, Transphorm GaN devices are filling the void in customer roadmaps that lead to the higher power density and efficiency demanded in emerging applications. As we have showcased in various demonstrations at major trade shows beginning in 211, Transphorm s GaN power devices can switch at very high dv/dt (>1 V / ns) with low ringing and little reverse recovery. The clean and fast transition has greatly reduced switching loss, thus improving efficiency for high-frequency applications, enabling higher power density by using smaller magnetics. V ds (V) 5 4 3 2 1 3~5ns rise/fall time Vd Vg I_ind 5ns 5 4 3 2 1 V GS (V), I Inductor (A) -1-1 3.53 3.58 3.63 3.68 3.73 t (µs) GaN motor drive (right) is dramatically smaller than its Silicon equivalent (left) GaN - 4.5 kw in 1 liter enclosure. >98% efficiency. 5 khz switching frequency shrinks size of passives. No cooling fan. No audible noise Si - 4.5 kw in 18 liter enclosure. 96.5% efficiency. Cooling fan needed
Transphorm Devices Bring High-Frequency to Motor Drives Efficient high-frequency switching with simple, diode-free bridges offers reduced part count and lower switching loss for motor drives. In addition, compact output filters can be integrated to provide pure sinusoidal outputs, resulting in: Less motor loss due to distortion. Less insulation stress, bearing wear and EMI due to transients.. Less switching loss due to cable and motor capacitance. Higher system bandwidth enables:. Faster settling time for servo systems.. Active suppression of system resonances.. Less distortion for high-speed or high-pole-count motors. Diode-free three-phase bridge, with waveforms, in a high-frequency GaN motor drive Traditional direct PWM drive of a motor produces current waveforms with unwanted and harmful harmonic components. Efficient switching at high PWM frequencies allows inclusion of a small output filter in the motor drive (>98.5% at 1kHz, filter loss included). The phase currents are purely sinusoidal, thus free of unwanted harmonics, enabling any motor to run more efficiently. This brings the benefits of variable-speed operation to even non-inverter-duty-rated motors, opening an untapped retrofit market.
Diode-free GaN Inverter Delivers 98.8% Efficiency Because GaN HEMTs can carry freewheeling currents without the need of external diodes, bridge circuits are elegant and simple. Transphorm offers a full-bridge, single phase hard switched inverter evaluation board to demonstrate the performance improvements made possible for applications such as UPS, PV and welding. At the heart of the inverter are four 6 V discrete GaN HEMTs. Switching at 1 khz with peak efficiency over 98.8%, the design space for optimum power density is significantly increased. Diode-free full-phase bridge inverter, including output filter. 99.5 99. 5 khz 7 6 Efficiency (%) 98.5 98. 97.5 97. 96.5 1 khz 5 4 3 2 1 Power Losses (W) 96. 5 1 15 2 25 3 Output Power (W) 3 kw Inverter Board Typical efficiency for 24Vac output, 4 Vdc input.
Transphorm EZ-GaN Shrinks 25W All-in-One Computer Power Supply Transphorm has designed a complete 25 W power supply evaluation board specifically to meet the requirements of an All-in-One computer. The All-in-One Power Supply Evaluation Board uses ON Semiconductor control ICs (NCP481, NCP1654, NCP1397, NCP432) and three Transphorm 6 V GaN high electron mobility transistors (HEMTs) in both the PFC and bridge configurationthe PFC Daughter Card comes fully populated. This allows customers to easily adapt the card to their designs with seven hookup wires and to see the immediate efficiency gain without having to change their layout. The compact-size board switches at 2 khz to shrink the size and maintain the high efficiency that best showcases GaN devices advantage in delivering both small size and high efficiency not possible with existing silicon solutions. With universal AC input, the All-in-One Power Supply Evaluation Board can deliver up to 2 A at 12 V output with a peak efficiency of 95.4% from a 23 V ac line. Meets 8 PLUS Titanium Standard for 115V input with 45% reduction in size compared to Si-based equivalent Benchmarked against state-of-the-art imac power supply PWM: 2 khz (GaN) vs. 5-8 khz (Si). Eff: +1.7% at full load; +3% at 1% loadstate
Transphorm Devices Enable Unique Circuit Topology The introduction of Transphorm s 6V GaN power transistors allows unconventional circuits previously impractical to implement. The simultaneously low on-resistance and low reverse recovery charge from these high-performance GaN-on-Si HEMT offer a new keystone in building a long-awaited totem pole power correction circuit (PFC). In addition to excellent potential for low common-mode EMI, this elegant GaN-based PFC features the least number of fast power devices and offers the least resistance paths for the main current, enabling a prototype to achieve 99% efficiency from a 23 Vac line to 4 Vdc bus. S 1 S D1 V ac + i L V s V D S 2 S D 2 True-bridgeless Totem pole PFC with GaN HEMT & Synchronous rectification Eff. (%) 99.5 99 98.5 98 97.5 97 96.5 96 95.5 23V:39V, 5kHz Eff Loss 4 35 3 25 2 15 1 2 4 6 8 1 P OUT (W) 5 Loss (W) Eff. (%) 98.5 98 97.5 97 96.5 96 95.5 95 115V:39V, 5kHz Eff Loss 94.5 1 2 3 4 5 P OUT (W) Performance of the GaN-based Totem Pole PFC with synchronous rectification showing >99% at Vin=23 Vrms and >98% at Vin=115 Vrms (GaN HEMTs: TPH36PS x2 4 35 3 25 2 15 1 5 Loss (W)
2 khz LLC Bridge Converter Delivers >97% Efficiency Transphorm has completed a 25 W LLC Evaluation Board that includes an LLC controller IC and two 6 V GaN HEMTs in a bridge configuration on the primary side, and synchronous rectification on the secondary side. The compact board is designed to switch at 2 khz and deliver higher efficiency, showcasing GaN s advantage in resonant circuit applications. With 39 Vdc input, the LLC Evaluation Board delivers an output up to 2 A @ 12 V with a peak efficiency of 97.5%. Vin S2 Cr Lr T SR1 S1 L m N 1 Io Vo 1 R L SR2 Compact 25 W 39 V-to-12 V GaN-based LLC dc-dc converter at 2 khz Si MOSFET GaN HEMT Switching waveforms showing much shorter deadtime for GaN HEMTs The lower output charge of the GaN HEMT results in a much shorter dead time, therefore a wider window for power transfer to reduce RMS current, leading to lower overall losses. This advantage is more significant for compact converters running at >5 khz switching frequencies. Similar benefits apply to all high-frequency resonant circuits. Efficiency (%) 98 97 96 95 94 93 39V:12V, 2kHz 92 5 1 15 2 25 P OUT (W) Eff Loss 12 1 8 6 4 2 Loss (W) Performance of LLC converter achieving 97.5% peak efficiency
Advancing GaN Power Technology Transphorm is Redefining Power Conversion. Research continues at Transphorm following the basic roadmap established in 29 starting with qualified 6 V devices (as introduced at APEC 212) and 1, V devices (as shown at PCIM 213). Our research and development continues, now with an expanded family of 6V with lower R(on) devices and higher power packaging (including modules), and then 1,2 V devices followed by 15 V devices. In parallel with the existing HEMT devices, Transphorm is developing a high-efficiency Four Quadrant Switch (FQS). This first true bi-directional transistor was developed in cooperation with the U.S. Department of Energy - Advanced Research Projects Agency - Energy (ARPA-E) project for solar applications. The first devices were shown in 212 at the ARPA-E summit in Washington DC. Output Characteristics: Conducts in both directions when ON 1 8 6 4 2-5 -3-1 -2 1 3 5 V DS (V) -4-6 -8-1 I D (A) 2V 2.5V 3V 3.5V 4V 4.5V 5V. GaN FQS delivers lowest loss with fewer devices. 6 V & 1,2 V lateral structure enables single chip FQS. High-frequency operation in low-loss resonant topologies. Targeted for PV micro-inverters, kw string inverters and motor drives Off-state Curve: Blocks in both directions Leakage < 5 μa to 18 V; BV > 2 kv 4 3 I D (µa) 2 1-25 -2-15 -1-5 5 1 15 2 25-1 V DS (V) -2-3 -4
Global Depth in Engineering, Technical Support and Manufacturing California Belgium Germany Japan Taiwan Hong Kong Transphorm s global network of development engineering, research, fabrication, distribution and applications engineering offer our customers unrivaled support from design concept to volume production. Transphorm, Inc. Tel: (85) 456-13 / Fax: (85) 968-1985 http://www.transphormusa.com/contact Transphorm Proprietary and non Confidential