GaN-on-Si in Power Conversion Alex Lidow, CEO October 2016

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The egan FET Journey Continues GaN-on-Si in Power Alex Lidow, CEO October 2016 EPC - The leader in GaN Technology www.epc-co.com 1

Agenda How far have we come? What paths are we taking? Where is the leverage for integration? The road ahead. EPC - The leader in GaN Technology www.epc-co.com 2

Fast Moving Technology Gen 1,2,3,4 FETs and ICs 2010-2015 30 V - 450 V Higher Scale Integrated Circuits Generation 5 Smaller, Faster, Less Cost EPC - The leader in GaN Technology www.epc-co.com 3

Gen 5: ½ size and 2X performance EPC2010C 25 mohm EPC2046 25 mohm EPC2001C 7 mohm EPC2045 7 mohm 6.06 mm2 2.82 mm2 6.99 mm2 3.96 mm2 EPC - The leader ingan Technology www.epc -co.com 4

79% Efficient 13.8 kvac Distribution Transformers Uninterruptable Power Supplies (UPS) AC/DC Digital Chip 98% 98% 97% 98% 98% 95% 85% 93% 150 W 208 VAC 208 VAC 400 VDC 48 VDC 12 VDC 1 VDC 100 W 150 W 100 W Non Isolated Point of Load 12 V 1 V Buck Converter EPC - The leader in GaN Technology www.epc-co.com 5

Efficiency (%) First Generation egan FET 92 91 90 89 88 87 86 85 84 83 82 81 80 79 GaN Circa 2010 2 6 10 14 18 22 26 30 34 38 42 46 50 Output Current (A) egan is a registered trademark of Efficient Power Corporation V IN =12 V, V OUT =1.2 V, f sw =1 MHz EPC - The leader in GaN Technology www.epc-co.com 6

Efficiency (%) Improved Layout 92 91 90 89 88 87 86 85 84 83 82 81 80 79 GaN Circa 2012 GaN Circa 2010 2 6 10 14 18 22 26 30 34 38 42 46 50 Output Current (A) V IN =12 V, V OUT =1.2 V, f sw =1 MHz EPC - The leader in GaN Technology www.epc-co.com 7

Efficiency (%) Fourth Generation egan FET 92 91 90 89 88 87 86 85 84 83 82 81 80 79 GaN Circa 2012 GaN Circa 2010 2 6 10 14 18 22 26 30 34 38 42 46 50 Output Current (A) GaN Circa 2014 V IN =12 V, V OUT =1.2 V, f sw =1 MHz EPC - The leader in GaN Technology www.epc-co.com 8

Efficiency (%) Monolithic Half Bridge 92 91 90 89 88 87 86 85 84 83 82 81 80 79 GaN Circa 2012 GaN Circa 2010 2 6 10 14 18 22 26 30 34 38 42 46 50 Output Current (A) GaN Circa 2015 GaN Circa 2014 V IN =12 V, V OUT =1.2 V, f sw =1 MHz EPC - The leader in GaN Technology www.epc-co.com 9

Efficiency (%) Silicon IBC and GaN POL 88 86 84 83% 82 80 Traditional Two Stage Isolated IBA Si/GaN 0 50 100 150 200 250 300 350 400 450 500 550 600 Output Power (W) EPC - The leader in GaN Technology www.epc-co.com 10

egan FETs and ICs 13.8 kvac Distribution Transformers Uninterruptable Power Supplies (UPS) AC/DC Digital Chip 98% 97% 98% 98% 96% 95% 98% 90% 85% 93% 150 W 140 W 208 VAC 208 VAC 400 VDC 48 VDC 12 VDC 1 VDC 85% Efficient 100 W 100 W 48 V 12 V 1 V EPC - The leader in GaN Technology www.epc-co.com 11

Efficiency (%) egan FETs and ICs 88 86 84 82 80 GaN/GaN Traditional Two Stage Isolated IBA Si/GaN 0 50 100 150 200 250 300 350 400 450 500 550 600 Output Power (W) EPC - The leader in GaN Technology www.epc-co.com 12

Eliminate 12 V Bus 13.8 kvac Distribution Transformers Uninterruptable Power Supplies (UPS) AC/DC Digital Chip 98% 97% 98% 98% 96% 95% 98% 90% 85% 93% 150 W 208 VAC 208 VAC 400 VDC 48 VDC 12 VDC 1 VDC 100 W 140 W 100 W One Stage Non Isolated Point of Load 48 V 1 V Buck Converter EPC - The leader in GaN Technology www.epc-co.com 13

Eliminate 12 V Bus 13.8 kvac Distribution Transformers Uninterruptable Power Supplies (UPS) AC/DC Digital Chip 98% 97% 98% 98% 96% 95% 98% 90% 85% 93% 150 W 208 VAC 208 VAC 400 VDC 48 VDC 12 VDC 1 VDC One Stage 100 W 140 W 100 W Non Isolated Point of Load 48 V 1 V Buck Converter Monolithic Half Bridge EPC - The leader in GaN Technology www.epc-co.com 14

Efficiency (%) 88 Performance Gap 86 Single Stage Buck Converter with Monolithic Half Bridge 84 82 Traditional Two Stage Isolated IBA GaN/GaN 80 0 50 100 150 200 250 300 350 400 450 500 550 600 Output Power (W) Si/GaN EPC - The leader in GaN Technology www.epc-co.com 15

Efficiency (%) 88 86 Single Stage Buck Converter with Monolithic Half Bridge Improved FETs 84 82 80 GaN/GaN Traditional Two Stage Isolated IBA Si/GaN 0 50 100 150 200 250 300 350 400 450 500 550 600 Output Power (W) EPC - The leader in GaN Technology www.epc-co.com 16

GaN Integrated Circuit Roadmap Monolithic Half Bridge Half Bridge plus Bootstrap Integrated FET and low side driver Integrated half bridge with level shift and drivers Monolithic Buck IC EPC - The leader in GaN Technology www.epc-co.com 17

GaN Integrated Circuit Roadmap Monolithic Half Bridge Half Bridge plus Bootstrap Integrated FET and low side driver Integrated half bridge with level shift and drivers Monolithic Buck IC EPC - The leader in GaN Technology www.epc-co.com 18

First Step - Integrated FET and Low Side Driver EPC - The leader in GaN Technology www.epc-co.com 19

Monolithic Gate Driver and FET EPC - The leader in GaN Technology www.epc-co.com 20

GaN Integrated Circuit Roadmap Monolithic Half Bridge Half Bridge plus Bootstrap Integrated FET and low side driver Integrated half bridge with level shift and drivers Monolithic Buck IC EPC - The leader in GaN Technology www.epc-co.com 21

Efficiency (%) 88 Monolithic IC 86 Single Stage Buck Converter Improved FETs 84 GaN 82 80 Traditional Two Stage Isolated IBA Si 0 50 100 150 200 250 300 350 400 450 500 550 600 Output Power (W) EPC - The leader in GaN Technology www.epc-co.com 22

13.8 kvac Distribution Transformers Uninterruptable Power Supplies (UPS) AC/DC Digital Chip 98% 98% 97% 98% 98% 95% 85% 93% 150 W 150 W 208 VAC 208 VAC 400 VDC 48 VDC 12 VDC 1 VDC 79% Efficient 100 W 100 W EPC - The leader in GaN Technology www.epc-co.com 23

13.8 kvac Distribution Transformers Uninterruptable Power Supplies (UPS) AC/DC Digital Chip 98% 97% 98% 98% 96% 95% 98% 90% 85% 93% 150 W 140 W 208 VAC 208 VAC 400 VDC 48 VDC 12 VDC 1 VDC 85% Efficient 100 W 100 W 48 V 12 V 1 V EPC - The leader in GaN Technology www.epc-co.com 24

egan Integrated Circuit 13.8 kvac Distribution Transformers Uninterruptable Power Supplies (UPS) AC/DC Digital Chip 98% 97% 98% 98% 96% 95% 98% 90% 85% 93% 150 W 134 140 W 208 VAC 208 VAC 400 VDC 48 VDC 12 VDC 1 VDC 100 W 100 W 88% Efficient EPC - The leader in GaN Technology www.epc-co.com 25

egan Integration Roadmap Discrete Monolithic Half-Bridge IC Wireless Charging IC LiDAR IC Power SoC Envelope Tracking IC 2010 2014 2015 2016 2017 EPC - The leader in GaN Technology www.epc-co.com 26

Summary GaN integration creates a lot of performance leverage. The first steps in integration involve reducing parasitic inductance and integration of drive circuitry. The second stage involves including level shift and current sense. The third stage will include control circuitry in both analog and digital. EPC - The leader in GaN Technology www.epc-co.com 27