Product Change Notice Product Change Information: The internal DDR of SQFlash 820 (-S) Series SATA III products will have lithography upgrade from current 42nm to 30nm. The new DDR will be implemented from 1 st July, 2014 (running change). Affected Parts SQFlash part numbers end up with S8C, S8E, A8C, A8E, with capacities are equal to or less than 128GB, and any of the customized products based on above parts. Description of Change: 1. Nanya has discontinued DDR3 42nm 2Gb X16 H-die product support from 07/01/2014, which is applied to SQFlash 820 series products with capacities are equal to or less than 128GB. (Appendix Nanya PCN) 2. New DDR has been fully tested and proved to function identically with old one, there s no effect on reliability, performance, and compatibility. (Appendix reliability test report) Initiated by Precyan.Lee Job Title Emb Core PM Release Date 2014-05-02 Reviewed by Job Title Revision #1.0 Approved by Ethan.Chen Job Title Emb Core PM Release Status Formal Release
Product / Process Change Notification PCN # DN13601 Dear Customer, Please find the following PCN notification from Nanya Technology Corp.(NTC) Important information for your attention: Please feedback NTC your concern in writing. Lack of response by you after these 30 days constitutes acceptance of the change. After acceptance, Nanya Technology Corp. will consider that our customer agrees with the changes or additions and is willing to help NTC with a smooth transition. Your attention and response to this matter is greatly appreciated. NTC DRAM Product Discontinuance Information Contact Window: MKT Consumer Product promotion Dept.- Cindy Chen Tel: 886-3-3281688 ext : 6010 e-mail:cindy Chen <Cindychen@ntc.com.tw> NANYA TECHNOLOGY HWA-YA TECHNOLOGY PARK 669, FUHSING 3 RD. KYEISHAN, TAOYUAN TAIWAN R.O.C 1 / 2
Product / Process Change Notification PCN # DN13601 Subject of change : DDR3 42nm 2Gb X16 H-die product EOL. PCN Category : Product Discontinuance Change Purpose : Nanya will discontinue DDR3 42nm 2Gb X16 H-die product support from 07/01/2014. Change Description: DDR3 42nm 2Gb X16 H-die product EOL. Successor product is DDR3 30nm 2Gb F-die product. Change Evaluation Result : Please customer feedback supporting demand forecast. Products Affected : Technology Config. Voltage Part Number Successor of Nanya PN 42 nm, H die X16 Implementation/ Effective Schedule :(MM/DD/YYYY) Last buy date:03/31/2014 Last ship date:06/30/2014 1.5V 1.35V NT5CB128M16HP-CG - NT5CB128M16HP-DI NT5CB128M16HP-EK NT5CB128M16FP-DI NT5CB128M16FP-EK NT5CB128M16HP-CGI - NT5CB128M16HP-DII NT5CB128M16FP-DII NT5CC128M16HP-CG - NT5CC128M16HP-DI NT5CC128M16FP-DI Customer : Approval : NANYA TECHNOLOGY HWA-YA TECHNOLOGY PARK 669, FUHSING 3 RD. KYEISHAN, TAOYUAN TAIWAN R.O.C 2 / 2
SQFlash 820 Series New DDR Qualification Report Initiated by Precyan.Lee Job Title Emb Core PM Release Date 2014-04-28 Reviewed by Job Title Revision #1.0 Approved by Ethan.Chen Job Title Emb Core PM Release Status Formal Release Page 1 of 11
Revision History: Revision Date Revision Description 2014/04/28 1.0 First version released Page 2 of 11
TABLE OF CONTENTS 1. Product Information... 4 2. Result Overview... 4 3. Test Items vs. Conditions... 5 3.1 High Temperature Storage Test... 5 3.2 High Temperature Operation Test... 6 3.3 Low Temperature Storage Test... 7 3.4 Low Temperature Operation Test... 8 3.5 Temperature & Humidity Storage Test... 9 3.6 Temperature & Humidity Operation Test... 10 3.7 Temperature Cycling Operation Test... 11 Page 3 of 11
1. Product Information Product Name DDR Type SQF-S25M8-128G-S8E DDR3, NT5CB128M16FP-DII, I-grade, 30nm 2. Result Overview Test Item Sample Size Test Result 1 High Temperature Storage Test 3 Pass 2 High Temperature Operation Test 3 Pass 3 Low Temperature Storage Test 3 Pass 4 Low Temperature Operation Test 3 Pass 5 Temperature & Humidity Storage Test 3 Pass 6 Temperature & Humidity Operation Test 3 Pass 7 Temperature Cycling Operation Test 3 Pass Page 4 of 11
3. Test Items vs. Conditions 3.1 High Temperature Storage Test Purpose: To verify the storage ability of SQF-S25 820 SSD at high temperature environment Test Condition(s): Temperature: 85 Duration: 168HRS DUT State: Storage Quantity: 3 PCS Temperature & Humidity Equipment: KSON-THS-A4T Laboratory Ambience: 23±3, 50%±3%(RH) Pass/Fail Criteria: 1. To ensure that no abnormalities with physical appearance are found or any electrical function failures are detected Test Result: Sample No. Sample 1 Sample 2 Sample 3 Appearance Pass Pass Pass Function Pass Pass Pass Test Setup: Page 5 of 11
3.2 High Temperature Operation Test Purpose: To verify the operation ability of SQF-S25 820 SSD at high temperature environment. Test Condition(s): Temperature: 85 Duration: 72 HRS DUT State: Operation Quantity: 3 PCS Temperature & Humidity Equipment: KSON-THS-A4T Laboratory Ambience: 23±3, 50%±3%(RH) Pass/Fail Criteria: 1. To ensure that no abnormalities with physical appearance are found or any electrical function failures are detected Test Result: Sample No. Sample 1 Sample 2 Sample 3 Appearance Pass Pass Pass Function Pass Pass Pass Test Setup: Page 6 of 11
3.3 Low Temperature Storage Test Purpose: To verify the storage ability of SQF-S25 820 SSD at low temperature environment. Test Condition(s): Temperature: -40 Duration: 168 HRS DUT State: Storage Quantity: 3 PCS Temperature & Humidity Equipment: KSON-THS-A4T Laboratory Ambience: 23±3, 50%±3%(RH) Pass/Fail Criteria: 1. To ensure that no abnormalities with physical appearance are found or any electrical function failures are detected Test Result: Sample No. Sample 1 Sample 2 Sample 3 Appearance Pass Pass Pass Function Pass Pass Pass Test Setup: Page 7 of 11
3.4 Low Temperature Operation Test Purpose: To verify the operation ability of SQF-S25 820 SSD at low temperature environment. Test Condition(s) : Temperature: -40 Duration: 72 HRS DUT State: Operation Quantity: 3 PCS Temperature & Humidity Equipment: KSON-THS-A4T Laboratory Ambience: 23±3, 50%±3%(RH) Pass/Fail Criteria: 1. To ensure that no abnormalities with physical appearance are found or any electrical function failures are detected Test Result: Sample No. Sample 1 Sample 2 Sample 3 Appearance Pass Pass Pass Function Pass Pass Pass Test Setup: Page 8 of 11
3.5 Temperature & Humidity Storage Test Purpose: To verify the storage ability of SQF-S25 820 SSD at both high temperature and humidity environment. Test Condition(s): Temperature: 55 Humidity: 95% Duration: 96 HRS DUT State: Storage Quantity: 3 PCS Temperature & Humidity Equipment: KSON-THS-A4T Laboratory Ambience: 23±3, 50%±3%(RH) Pass/Fail Criteria : 1. To ensure that no abnormalities with physical appearance are found or any Test Result: Sample No. Sample 1 Sample 2 Sample 3 Appearance Pass Pass Pass Function Pass Pass Pass Test Setup: Page 9 of 11
3.6 Temperature & Humidity Operation Test Purpose: To verify the operation ability of SQF-S25 820 SSD at both high temperature and humidity environment. Test Condition(s): Temperature: 55 Humidity: 95% Duration: 72 HRS DUT State: Operation Quantity: 3 PCS Temperature & Humidity Equipment: KSON-THS-A4T Laboratory Ambience: 23±3, 50%±3%(RH) Pass/Fail Criteria: 1. To ensure that no abnormalities with physical appearance are found or any electrical function failures are detected Test Result: Sample No. Sample 1 Sample 2 Sample 3 Appearance Pass Pass Pass Function Pass Pass Pass Test Setup: Page 10 of 11
3.7 Temperature Cycling Operation Test Purpose: To verify whether a constant thermal change environment affects the physical appearance and functions of a device or not. Test Condition(s): Temperature: -40 ~ 85 Rise/Drop Rate: 1 /Min. Duration: -40 for 30 minutes 85 for 30 minutes No. of Cycles: 20 DUT Status: Operation Quantity: 3 PCS Temperature & Humidity Equipment: KSON-THS-A4T Laboratory Ambience: 23±3, 50%±3%(RH) Pass/Fail Criteria: 1. To ensure that no abnormalities with physical appearance are found or any electrical function failures are detected Test Result : Sample No. Sample 1 Sample 2 Sample 3 Appearance Pass Pass Pass Function Pass Pass Pass Test Setup: Page 11 of 11