貢獻於電動車演變的半導體元件 Chris Lin Rohm Semiconductor Taiwan Design Center April 20, 2017 All Rights Reserved
Agenda (1) xev Trend (2) Main Appliation for xev (3) Electronics for xev - 3.1 Main Inverter - 3.2 DC/DC Converter - 3.3 On Board Charger (4) Rohm Activities for Automotive Application. All Rights Reserved. P. 1
Agenda (1) xev Trend (2) Main Application for xev (3) Electronics for xev - 3.1 Main Inverter - 3.2 DC/DC Converter - 3.3 On Board Charger (4) Rohm Activities for Automotive Application. All Rights Reserved. P. 2
xev Application HEV Structure Example Main Block includes: Inverters / DCDC Converters / Electric compressors / Battery chargers 1On Board Charger 2DCDC Converter 3Main Inverter P. 3
Effect on xev application Low Ron Resistance Small Size Device / High Efficiency 1 2 High Frequency Operation Coil and Condenser Down Sizing 1 10 High Temperature Operation Simplify Cooling System 200 250 250 200 150 100 VGS =18V 16V 14V 12V 10V 8V 6V 4V 2V Water Cooling 1 5 Air Cooling 50 0V 0 0 5 10 15 20 P. 4
Rohm Solution for xev Application LSI Gate Driver Isolator Temp Monitor BMS IC Power IC IPD Standard LSI Discrete SiC Device IGBT Si-MOSFET Si-Diode Shunt Resistor P. 5
Agenda (1) xev Trend (2) Main Appliation for xev (3) Electronics for xev - 3.1 Main Inverter - 3.2 DC/DC Converter - 3.3 On Board Charger (4) Rohm Activities for Automotive Application P. 6
Main Inverter Description Convert Battery Voltage into 3-Phase AC Voltage to Drive Motor Block diagram Low voltage side Isolated Gate Driver High voltage side Focused Products LSI Isolated Gate Driver Isolator Temperature monitor High voltage monitor Power supply Op-amp comparator EEPROM Discrete SiC-MOSFET MOSFET BipTr Schottky barrier diode Fast recovery diode Anti-surge chip resistor Wide terminal type chip resistor P. 7
DCDC Converter Description Supplying Power Efficiently to the Engine under All Operating Condition for xev. Block diagram Focused Products LSI Isolated Gate Driver Isolator Temperature monitor High voltage monitor Power supply Op-amp comparator EEPROM Discrete SiC-MOSFET SiC-SBD SJ-MOSFET BipTr Schottky barrier diode Fast recovery diode High power Shunt resistor Anti-surge chip resistor High voltage side Low voltage side P. 8
Isolated Gate Driver Main Technology EV/HEV system example Typical 3-phase inverter circuit Isolator GD GD GD GD: Gate Driver Motor Battery module Inverter Motor Isolator/gate Driver to be used for driving High-voltage MOSFET and IGBT in High current / High voltage application units GD GD Integrated Isolated GD Feature: Small Area High Reliability and Robustness High Speed Small-packaged Gate Driver with Integrated Isolators P. 9
Small Area Details of Isolation Technology Low Voltage SSOP-B20W High Voltage Cu Island Cu Coil Coreless Transformer Bonding PAD P. 10
48V Battery System for Mild HEV Automotive Market Trend:Automotive Battery 48V Trend Power Source Existing HEV Syste, 250V 電圧変換器 12V 250VHEV Motor Battery DC/DC Converter Power 電源 3.3V 3.3V 3.3V ECU ECU ECU Existing Higher Input Output 12V 3.3V Power 48V Mild Hybrid EV 48V 48V Power 48VHEV Motor Battery 3.3V 3.3V 3.3V ECU 電圧変換器 ECU ECU Better Efficiency 48V Power 48V 3.3V Input high ON DUTY becomes smaller HEV DC12V(Li,Pb) 48V Mild HEV with smaller motor P. 11
Direct Step-Down (48V to 3.3V) DC/DC Short 20ns pulse width to make stable 3.3V output from 48V for 2.0 MHz operation. Integrating high voltage MOSFET to expand the input voltage from 12V to 65V. P. 12
On-Board Charger Description Converting Household AC Supply to DC for High Voltage Battery Charging. Block diagram Focused Products LSI Isolated Gate Driver Isolator Temperature monitor High voltage monitor Power supply Op-amp comparator EEPROM Discrete SiC-MOSFET SiC-SBD SJ-MOSFET Schottky barrier diode Fast recovery diode Shunt resistor Anti-surge chip resistor Low voltage side High voltage side P. 13
Superior Material Properties of SiC Using SiC for Device Manufacturing beyond Si Compound semiconductor which has 1 x 1 covalent bond of Si and C Extremely hard material new mohs hardness :13 Diamond (15) Bandgap (ev) Higher Temp Operation: x3 Lower Loss:x1/10 Higher Voltage:x10 3 Si 1 10 6 1 10 5 Electric Breakdown Field (V/cm) 1K 2 GaN 4 SiC Cooling: x3 Thermal Conductivity (W/cm ) SiC SiC Wafer Higher Frequency :x10 3 Electron Saturation Velocity (x10 7 cm/s) 3K Melting Point ( ) Higher Temp Endurance:x3 P. 14
Comparison Between Si and SiC Devices Diode Transistor Note Si Bipolar device PND (FRD) IGBT Low Ron by hole injection (conductivity modulation) Slow reverse recovery (FRD) Tail current (IGBT) Si Unipolar device SBD MOSFET SJ-MOSFET Fast SW speed High RonA at HV SJ-MOS 900V Terrible body diode recovery SiC Unipolar device SBD MOSFET Very low RonA Fast SW speed Ultra fast recovery (SBD/ bodydiode of MOS) Operate at 200 ~ P. 15
SiC for xev Application 1On Board Charger 2DCDC Converter 3Main Inverter Market Trend Estimation 2016 2017 2018 2019 2020 2021 2022 1 On-Board Charger SiC-SBD + Si-MOSFET SiC-SBD + SiC-MOSFET ➁ DCDC Converter Si-MOSFET SiC-MOSFET ➂ Main Inverter Si-IGBT + Si-FRD SiC-MOSFET P. 16
Rohm Status for SiC Power Devices Production Status 2010/4 SiC-SBD MP start 2010/12 World 1st SiC-DMOS MP start 2012/5 World 1st Full SiC module MP start 2015/6 World 1st SiC Trench MOS MP start P. 17
SiC for On-Board Charger SiC SBD, SiC MOSFET, Gate Driver Fast charging for EV/HEV P. 18
SiC-SBD for Automotive On-Board Charger Automotive Grade SiC SBD line-up is available. Design-in or under production at many WW automotive customers. Automotive SiC-SBD Line-up WW Design-in Cases 10A 20A 30A 40A SMD 650V 6A to 20A SCS2 AJHR TO-263AB Insertion type 650V 6A to 20A SCS2 AGHR North America Europe Asia Japan TO-220AC 20A to 40A SCS2 AE2HR 1200V 5A to 20A SCS2 KGHR In mass production Design-in TO-247 10A to 40A SCS2 KE2HR/ SCS2 KE2AHR P. 19
Rohm Next Generation SiC-MOSFET 2G SiC-MOSFET Next Generation (3G) SiC-MOSFET Using Trench Gate World 1st Realize Lower On-Resistance <Conventional Single-Trench> Electric Field under Gate Trench Bottom portion <Rohm Double-Trench> Electric Field Decentralized under Gate Trench Bottom portion High High Low Low Source Trench in addition to Gate Trench P. 20
Ciss (pf) Next Generation SiC-MOSFET On-Resistance (Ron) vs. Input Capacitance (Ciss) 5000 4500 4000 Ron 50% Ciss 35% Same Chip Size Comparison with 2nd Generation SiC-MOSFET 3500 3000 2 nd Gene. SiC-MOSFET 2500 2000 1500 40mΩ 1200V 80mΩ 1200V 1000 500 0 3rd Gene. SiC-MOSFET 0 20 40 60 80 100 120 140 160 Ron@25 (mω) P. 21
Exploring the Possibilities of SiC ROHM SiC power devices adopted in inverters for the world s premiere race class for electric-powered cars: Formula E Venturi Team Season 3 begins in October 2016 at the Hong Kong Grand Prix Decreases inverter size and weight Mounted in the inverter used for machine drive Conventional Inverter Efficiency 1.7% higher Inverter Utilizing SiC SBDs Weight Volume 2kg lower 30% smaller size of cooling system P. 22
What s the IPD (Intelligent Power Device) Sometimes IPD is called IPS, Smart SW or Protected FET Intelligent Power Device Protected Functions + Power MOSFET IPD Feature Rich Protection(UVLO, THD, OCP, etc) Reduction of mounting area (Compare with Discrete) Easy design of PCB layout. All Rights Reserved. P. 23
Automotive IPD Application AT Control Shift Solenoid Shift Lock Key Lock Lock Up Solenoid Lighting Lamp Head Lamp Tail / Stop Lamp Fog Lamp Indicator Back Lamp Room Lamp Entrance Lamp Grove box, Ash tray Various Indicator. All Rights Reserved. Engine Control Ignition Coil Fuel Injector Bulb Timing Solenoid ABS Control ABS Solenoid Actuator Relay Motor Relay Body Electronics Door Lock Door Mirror Power Window Sun Roof Starter Wiper Washer Rear defogger Horn Oil Suspension Control Flow Control Solenoid Oil Cooler P. 24
Agenda (1) xev Trend (2) Main Appliation for xev (3) Electronics for xev - 3.1 Main Inverter - 3.2 DC/DC Converter - 3.3 On Board Charger (4) Rohm Activities for Automotive Application P. 25
Rohm Corporate Data COMPANY MISSION Quality is our top priority at all times. Our objective is to contribute to the advancement and progress of our culture through a consistent supply, under all circumstances, of high quality products in large volumes to the global market. Date Established Paid-in Capital President Net Sales Number of Employees ROHM Group Companies September 17,1958 86,969 million as of March 31, 2016 Satoshi Sawamura 352,397 million for the year ending March 31, 2016 21,171 as of March 31, 2016 Japan: 12 Global: 34 Modules 10% Sales by Product Category (Consolidated) 36% Others 7% Discrete Semiconductor Devices ICs 47% 2017 ROHM Co., Ltd. P. 26 900E02A
To Smart Car / Future Car Electric Power More Electronic Devices Evolution of Artificial Intelligence Source: Ericsson Source: Rohm Website. All Rights Reserved. P. 27
Electric Power with More Electronic Devices Source: Rohm Website. All Rights Reserved. P. 28
Rohm at Japan Ceatec 2016 & CES 2017 Hi-Res Audio Audio IC Smart Entry Auto Tilt Steering Motor Driver Conditoon check Pulse Sensor Ignition, etc. various Switch Touch Switch Hi-Res LCD Panel PMIC TCON Source Dr. / Gate Dr. LVDS Hi-Mirror Less Video IC Smart Entry Touch Switch Bluetooth Module Back Monitor Info Display Sensor, Video IC Smart Phone Holder Wireless Charger Driver Detection IR Image Sensor LED Lamp Diagnosis System Color Sensor LED Lamp ADB Sequential Turn LED Matrix Driver. All Rights Reserved. P. 29