16, 35, 46 element Si photodiode rry for UV to NIR re Si photodiode liner rry mounted in cermic DIPs (Dul Inline Pckges). These photodiode rrys re primrily developed for low-light-level detection such s spectrophotometry, nd cover wide spectrl rnge from UV to ner infrred light. Since ll elements cn be used with reverse bis for chrge storge redout, re ble to detect low level light with high sensitivity. Cross-tlk between elements is minimized to mintin signl purity. Specil filters cn be ttched s the input window (custom order products). Fetures Lrge ctive re Low cross-tlk S4111 series: Enhnced infrred sensitivity, low drk current S4114 series: IR sensitivity suppressed type, low terminl cpcitnce, high-speed response Applictions Multichnnel spectrophotometers Color nlyzers Light spectrum nlyzers Light position detection Generl rtings / Absolute mximum rtings Type No Window mteril Pckge Active re (per 1 element) Size (mm) Between elements mesure Between elements pitch Number of elements (mm) S4111-16R Resin potting S4111-16Q 18 pin DIP 1.45 0.9 1.305 16 S4111-35Q 40 pin DIP 35 0.1 1.0 S4111-46Q Qurtz 48 pin DIP 46 4.4 0.9 3.96 S4114-35Q 40 pin DIP 35 S4114-46Q 48 pin DIP 46 Absolute mximum rtings Operting temperture Topr Reverse voltge VR mx Storge temperture Tstg Effective re (mm 2 ) (mm) (mm) (V) ( C) ( C) 15-20 to +60-20 to +80 Note: Absolute mximum rtings re the vlues tht must not be exceeded t ny time. If even one of the bsolute mximum rtings is exceeded even for moment, the product qulity my be impired. Alwys be sure to use the product within the bsolute mximum rtings. Electricl nd opticl chrcteristics (Typ. T=25 C, per 1 element, unless otherwise noted) Type No. Spectrl response rnge λ Pek sensitivity wvelength λp Photo sensitivity S Drk current ID Mx. Shunt resistnce Rsh VR=10 mv Terminl cpcitnce Ct Rise time tr RL=1 kω λ=655 nm λp 200 nm 633 nm VR=10 mv VR=10 V Min Typ. VR=0 V VR=10 V VR=0 V VR=10 V VR=0 V VR=10 V (nm) (nm) (A/W) (A/W) (A/W) (pa) (pa) (GΩ) (GΩ) (pf) (pf) (μs) (μs) (W/Hz 1/2 ) (W/Hz 1/2 ) S4111-16R 340 to 1100-0.39 5 25 2.0 250 200 50 0.5 0.1 4.4 10-16 1.7 10 S4111-16Q -15 0.08 0.43 960 0.58 S4111-35Q 190 to 1100 10 50 1.0 30 550 120 1.2 0.3 1.3 10-15 3.1 10 S4111-46Q -15 0.08 0.43 S4114-35Q 190 to 1000 800 0.50 60 300 0.15 2 35 20 0.1 0.05 5.7 10-15 8.0 10 S4114-46Q -15 NEP λ=λp www.hmmtsu.com 1
Spectrl response Photo sensitivity temperture chrcteristics 0.8 (Typ. T=25 C) +1.4 (Typ.) Photo sensitivity (A/W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 S4111-16R S4114 SERIES S4111-16Q/-35Q/-46Q Temperture coefficient (%/ C) +1.2 +1.0 +0.8 +0.6 +0.4 +0.2 0 S4114 SERIES S4111 SERIES 0 190 400 600 800 1000 1200 Wvelength (nm) KMPDB0112EB -0.2 190 400 600 800 1000 1100 Wvelength (nm) KMPDB0113EA Drk current vs. reverse voltge Terminl cpcitnce vs. reverse voltge 100 pa S4114-35Q/-46Q (Typ. T=25 C) 1 nf (Typ. T=25 C) Drk current 10 pa 1 pa 100 fa S4111-35Q/-46Q S4111-16Q/-16R Terminl cpcitnce 100 pf S4111-16Q/-16R S4111-35Q/-46Q S4114-35Q/-46Q 10 fa 0.01 0.1 1 10 100 Reverse voltge (V) KMPDB0114EA 10 pf 0.1 1 10 100 Reverse voltge (V) KMPDB0115EA 2
Exmple of cross-tlk S4111 series (T=25 C, λ=655 mm, VR=0 V) S4114 series (T=25 C, λ=655 mm, VR=0 V) 100 100 Reltive sensitivity (%) 10 1 Reltive sensitivity (%) 10 1 0.1 0.1 Light position on ctive re (500 µm/div.) KMPDB0015EA Light position on ctive re (500 µm/div.) KMPDB0018EB Dimensionl outline (unit: mm) S4111-16R S4111-16Q 22.86 ± 0.3 18.8 22.86 ± 0.3 18.8 ch 1 Active re 15.9 ch 16 18 17 16 15 14 13 12 11 10 1.45 7.49 ± 0.2 7.87 ± 0.3 0.5 ± 0.2 7.62 ± 0.3 ch 1 Active re ch 16 15.9 18 17 16 15 14 13 12 11 10 1.45 7.49 ± 0.2 7.87 ± 0.3 6.5 0.5 ± 0.2 7.62 ± 0.3 1 2 3 4 5 6 7 8 9 Index mrk 1 2 3 4 5 6 7 Index mrk 8 9 Resin 0.9 ± 0.3 2.2 ± 0.3 22.0 Qurtz window 0.9 ± 0.3 0.5 2.2 ± 0.3 P 8 = 20.32 P 8 = 20.32 KMPDA0136EB KMPDA0135EB 3
S4111-35Q, S4114-35Q S4111-46Q, S4114-46Q 4.4 ch 1 40 39 50.8 ± 0.6 Active re 34.9 22 21 Pin no. 1 2 19 20 Qurtz window P 19 = 48.26 ch 35 2.8 ± 0.3 15.11 ± 15.5 ± 0.3 Type No. 15.24 ± * S4111-35Q 1.45 S4114-35Q 1.35 4.4 ch 1 48 47 65.0 ± 0.8 Active re 45.9 26 25 1 2 23 24 Index mrk Qurtz window P 23 = 58.42 ch 46 15.11 ± 3.0 ± 0.3 15.5 ± 0.3 Type No. S4111-46Q 1.65 Detils of elements (for ll types) 15.24 ± * S4114-46Q 1.55 KMPDA0019ED KMPDA0021ED b c S4111-16Q/16R 1.45 0.9 0.1 S4111-35Q/46Q S4114-35Q/46Q 4.4 0.9 0.1 c b c KMPDA0112EA 4
Pin connections Pin No. 16-element 35-element 46-element type type type 1 KC KC KC 2 2 2 2 3 4 4 4 4 6 6 6 5 8 8 8 6 10 10 10 7 12 12 12 8 14 14 14 9 16 16 16 10 KC 18 18 11 15 NC 20 12 13 20 22 13 11 22 24 14 9 24 26 15 7 26 28 16 5 28 30 17 3 30 32 18 1 32 34 19 34 36 20 NC 38 21 KC 40 22 35 42 23 33 44 24 31 46 25 29 KC 26 27 45 27 25 43 28 23 41 29 21 39 30 19 37 31 17 35 32 15 33 33 13 31 34 11 29 35 9 27 36 7 25 37 5 23 38 3 21 39 1 19 40 NC 17 41 15 42 13 43 11 44 9 45 7 46 5 47 3 48 1 Operting circuits In the most generlly used circuit, opertionl mplifiers re con-nected to ech chnnel to red the output in rel time. The output of n opertionl mplifier is of low impednce nd thus cn be esily multiplexed. PHOTODIODE ARRAY MULTIPLEXER In the chrge storge redout method, the chrge stored in the junction cpcitnce of ech chnnel, which is proportionl to the incident light intensity, cn be red out in sequence by multiplexer. With this method, reverse voltge must be pplied to the photodiodes, so S4111 nd S4114 series re suitble. One mplifier is sufficient but cre should be tken regrding noise, dynmic rnge, etc. BIAS PHOTODIODE ARRAY ADDRESS MULTIPLEXER KMPDC0001EA KMPDC0002EA HAMAMATSU lso provides the C9004 driver circuit for Si photodiode rrys, tht llows direct mounting of the S4111-16Q/R on the circuit bord. 5
Informtion described in this mteril is current s of October, 2011. Product specifictions re subject to chnge without prior notice due to improvements or other resons. Before ssembly into finl products, plese contct us for the delivery specifiction sheet to check the ltest informtion. Type numbers of products listed in the delivery specifiction sheets or supplied s smples my hve suffix "(X)" which mens preliminry specifictions or suffix "(Z)" which mens developmentl specifictions. The product wrrnty is vlid for one yer fter delivery nd is limited to product repir or replcement for defects discovered nd reported to us within tht one yer period. However, even if within the wrrnty period we ccept bsolutely no libility for ny loss cused by nturl dissters or improper product use. Copying or reprinting the contents described in this mteril in whole or in prt is prohibited without our prior permission. www.hmmtsu.com HAMAMATSU PHOTONICS K.K., Solid Stte Division 1126-1 Ichino-cho, Higshi-ku, Hmmtsu City, 435-8558 Jpn, Telephone: (81) 53-434-3311, Fx: (81) 53-434-5184 U.S.A.: Hmmtsu Corportion: 360 Foothill Rod, P.O.Box 6910, Bridgewter, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fx: (1) 908-231-1218 Germny: Hmmtsu Photonics Deutschlnd GmbH: Arzbergerstr. 10, D-82211 Herrsching m Ammersee, Germny, Telephone: (49) 8152-375-0, Fx: (49) 8152-265-8 Frnce: Hmmtsu Photonics Frnce S.A.R.L.: 19, Rue du Sule Trpu, Prc du Moulin de Mssy, 91882 Mssy Cedex, Frnce, Telephone: 33-(1) 69 53 71 00, Fx: 33-(1) 69 53 71 10 United Kingdom: Hmmtsu Photonics UK Limited: 2 Howrd Court, 10 Tewin Rod, Welwyn Grden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fx: (44) 1707-325777 North Europe: Hmmtsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Soln, Sweden, Telephone: (46) 8-509-031-00, Fx: (46) 8-509-031-01 Itly: Hmmtsu Photonics Itli S.R.L.: Strd dell Moi, 1 int. 6, 20020 Arese, (Milno), Itly, Telephone: (39) 02-935-81-733, Fx: (39) 02-935-81-741 6 Ct. No. KMPD1002E07 Oct. 2011 DN