Mitsubishi Power Semiconductor Devices Mitsubishi Electric Corporation Power Device Works 27 th May, 2008
Major Markets Areas and and Some Product Families of of Mitsubishi Power Devices Main Product categories (examples) Major Applications Industry IGBT module (600V/1200V, 50~1000A) Standard IPM, ASIPM (600V/1200V, 4~800A) Inverter AC Servo Wind Power Solar System White goods DIP-IPM/SIP-IPM (600V, 3~75A, 6 devices, Transfer molding tech.) Air con. Refrigerator Washing machine Automobile HEV-IPM (600V/600A) HEV-IPU (600V/300A) EV/HEV for Motor drive Locomotive High power HVIPM,HVIGBT (1.7~6.5kV, 0.4~2.4kA) GCT (4.5~6.5kV, 0.4~6kA) Motor drive for Locomotive Mill machine Other IPD Acceleration Sensor HVIC
Power Density Enhancement for Medium Power PE Equipment Projected Growth of Power Density in Power Electronics System Designs Power パワー密度 Density [W/cc] (w/cc) 100 10 1 Gen-purpose Inverter ( Bipolar ) 0.1 Gen-purpose Inverter ( IPM ) Inverter for Appliances ( DIP-IPM ) Mitsubishi IGBT-G2 M-Converter (RB-IGBT) HEV Inverter Mitsubishi ( EV-IPM ) IGBT-G5 Mitsubishi (CSTBT) IGBT-G3 0.01 1980 1990 2000 2010 2020 年 Year M-Converter Inverter HEV Inverter Gen-purpose Inverter ( RC-IGBT & others ) Note: IPM: Intelligent Power Module DIP-IPM: Dual In-line Package IPM EV-IPM: IPM for EV and/or HEV applications RB-IGBT: Reverse Blocking type IGBT RC-IGBT: Reverse Conducting type IGBT M-Converter: Matrix Converter HEV Inverter: Inverter systems for hybrid vehicles Efforts toward SiC Application Integration Technology New Packaging Technologies Equipment s Power Density = P out (W) / Volume (cc)
Key Key Steps Steps of of IGBT IGBT Structural Improvements 3 rd Gen. Planar (3um), PT 1200V class IGBT E (Emitter)G (Gate) p n+ n+ p+ n- layer(epi.) n+ buffer layer(epi.) p+ substrate p+ p 250μm Shrink cell 1/10 Thinner -30% Eoff CSTBT Planar IGBT n+ buffer Layer (Epi.) E(Emitter) G(Gate) p+ n+ p n- layer (Epi.) p+substrate C (collector) 250μm C(Collector) 4 th Gen. Trench (1um), PT p+ n+ 170μm 5 th E(Emitter) G(Gate) p n n- layer (FZ) n+ buffer layer p+ C(Collector) N-type CS layer th Gen. CSTBT TM (1um), LPT V CE (sat) New structure implementing modified CSTBT cell design, optimized LPT concept and advanced fabrication process
J C (sat) [A/cm 2 ] (398K) V CE (sat) [V] (150A/cm 2,398K) 2.7 1200V IGBT 2.5 Trench IGBT 2.3 2.1 1.9 1.7 1.5 CSTBT TM 1.3 2.0 2.5 3.0 3.5 4.0 4.5 cell pitch [μm] 1050 1200V IGBT 1000 CSTBT TM 950 900 Trench IGBT 850 800 2.0 2.5 3.0 3.5 4.0 4.5 cell pitch [μm] Emitter electrode p B CS 6 th th Generation IGBT Technology n B Structural Features Trench gate Cell pitch 1.5μm1.0μm Isolation layer n E Cell pitch V GE =0V V CE =0V V V CE GE I C 50A(600A/cm 2 ) 1200V I C =0A V CE :200V/div, V GE :10V/div, I C :10A/div, time:0.5μs/div V GE =0V 800V V CE =0V I C =0A Turn-off switching -15V V GE +16V V CE Short-circuit ruggedness V CE :200V/div, V GE :20V/div, I C :20A/div, time:2μs/div I C 60A(750A/cm 2 )
IGBT s FOM Improvement FOM ratio [referenced to 1 st gen.] 14 12 10 8 6 4 2 0 1200V IGBT Trench structure Fine pattern process 2 nd gen. 1 st gen. CSTBT structure Thin wafer process 3 rd gen. 4 th gen. (with RTC) 5 th gen. 6 th gen. Figure Of Merit (FOM) = Jc / {v{ ce(sat) e off } where, J c = device s rated current density. [A/ cm2 ] v ce(sat) = saturation voltage drop at rated current density conduction with Tj at 400K. [V] e off = turn-off switching energy per pulse of operation at rated current density and Tj at 400K. [mj/pulse/a] 1985 1990 1995 2000 2005 2010 Year
The The fundamentals of of IPM IPM Concept: Concept: Local Local monitoring and and safe safe control control of of IGBT IGBT operation operation on on a real real time time basis basis Integrated schemes for a fast over-current detection & a speed-controlled turn-off Input Error Output Advantages: Biasing power source Drive Logic IGBT Fast detection Slow shutdown Over-current Protection FWD Current sensing by sense-cell implementation (1) Improvement of IGBT saturation voltage => Achieving lower power loss (2) Slowed over-current shutdown=> Controlling voltage over-shoot and noise (3) Monolithic integration of drive and protection circuit => Miniaturization Input Operation by a simple unipolar power source Biasing power source Drive Logic IGBT Low impedance drive for high-speed turn-off FWD Advantages: (1) Simplification of driving circuit => Miniaturization (2) Fast turn-off at normal switching => Achieving lower power loss (3) Monolithic integration of drive and protection circuit => Miniaturization
Functional Features of of Existing IPMs (5 (5 th th Gen. Level) Vcc In Supply Voltage Detection UV OT On Chip Temperature Detection 5th gen. CSTBT C Fo Fault Logic DRIVER GND SC Auxiliary Emitter Current Measurement Gate Drive adjustment for EMI optimisation E
Progressing HVIC Technology State-of-the-Art Future Prospects Higher Performance & Integration 0.5μm, 8φ, 8, 600V 1.3μm, 5φ, 5, SOI 0.8μm, 5φ, 5 with OTP, 600V 1.3μm, 5φ, 5, 600V 5μm, 5φ, 5, 600V&1200V
MFFP MFFP & Double Double Buried Buried Layer Layer Structure for for HVIC HVIC structure structure MFFP (Multiple Floating Field Plate): Surface electric field is relaxed by MFFP. Double Buried Layer: Avalanching points are shifted from surface to substrate by an unique Double Buried Layer Structure to stabilize breakdown voltage. MFFP Structure High Voltage Al Wiring n + p + n - n + n + p - n + /n - Double Buried Layer n -
Category Low Power IPM/IGBT For Industry/ Consumer/ Automotive fields Medium Power IPM/IGBT For Industry/ Consumer/ Automotive fields Progressing Package Technology Transfer-molded type Version 3 DIP-IPM High Rel. DIP-IPM Low Rth, Small size 1.2KV/25A DIP-IPM Case type Metal base plate) (Cu/Al203/AlN) Base plate-less Super-mini DIP-IPM DIP-CIB High current Transfer-molded Housing (TPM) High current DIP-IPM Progress based on molding technology Direct lead-bonded (DLB) Housing Common Platform New Gen Mold type (Under feasibility study) New molding concept (synergic) New Case type (Nx series) Compact Flexible and easy-to-use Standardized Heat-sink Integration High Power High Voltage IPM/IGBT For Traction/ Large drives Case type (Cu/AlN) Case type (AlSiC/AlN) For 1.7kV class For 6.5kV class High Tj housing New VHV structure Compact Higher P/C & H/C endurance Higher isolation capability Lower thermal resistance State-of-the-Art Future Prospects
Package Outline Transfer-mold DIP-IPM IPM Package Structure Large DIP-IPM Package Outline Mini DIP-IPM Al wire HVIC, ASIC Cu frame Diode, IGBT Au wire New Mini DIP-IPM Super mini DIP-IPM 2 nd Mold resin 1 st Mold resin Al heat sink Large DIP-IPM Mold resin Diode Al Wire Au Wire IGBT Cu Frame HVIC, ASIC Al Wire Diode Au Wire Cu Frame HVIC, ASIC IGBT Mold resin Thermal-sheet for heat dissipation and electrical insulation (Cu foil + Resin) Advanced DIP-IPM Structure Mini DIP-IPM
M size base NX package concept M size case pin bush Double terminal substrate terminal cover
New Power Semiconductor Material Si power devices : approaching theoretical limit Can SiC be a choice!? How!? SiC Wide band gap (3 times of Si) Higher operating temperature Breakdown strength (10 times of Si) Higher blocking voltage with thin layer Thermal conductivity (3 times of Si) MOSFET MOS gate controlled unipolar switching device Easy to control by gate voltage variation Low carrier storing effect, low switching loss No latch-up, No secondary breakdown Material Si 4H-SiC Next generation ideal power switch SiC-MOSFET Comparison of physical properties between Si and SiC Bandgap [ev] 1.1 3.3 Electron Mobility [cm 2 /Vs] 1500 1140 Dielectric Breakdown [MV/cm] 0.3 3 Theoretical limit for unipolar devices, R on.sp @ 1.2kV [mω cm 2 ] ~ 300 < 1
3.7kW/400V motor drive Overview of the experimental motor drive system SiC inverter 4HSiC-MOSFET inverter operation Phase current (A) 3-phase output current at full-load motor drive operation Time (msec) 3.7kW/400V motor Fabrication for R&D work. Dynamometer Power loss in inverter module (arb. units) Carrier frequency (khz)
High Power Density Inverter Fabrication and Evaluation Using 1200V SiC-MOSFET/SBD W81 D98 H55 Experimental Inverter (3.7kW/400V/3ph) Fabricated SiC Module Fabrication for R&D work Achieved Power Density: 9W/cm 3
80 High hfe Bipolar Tr Improvement of of Operating Power Power Losses Losses 85 90 95 00 05 10 1 st Gen 2 nd Gen 3 rd Gen 4 th Gen 5 th Gen 6 th Gen device SiC device FR-Z200 FR-A200 FR-A500 FR-A700 Design rule : 5μm 3μm 1μm 1μm Current density : 100A/cm 2 135A/cm 2 180A/cm 2 200A/cm 2 Saturation voltage : 2.4v 2.2v 1.6v 1.6v Power loss 100 % Transistor turn-off loss Transistor on-state loss 67% 50% Power loss on inverter operation 100% 33% 27% 22% 17% Transistor turn-on loss ~Bipolar Planar IGBT Trench IGBT SiC!? power loss reduction 10%? 0st Gen. 1 st Gen. 2 nd Gen. 3 rd Gen. 4 th Gen. 5 th Gen. 6 th Gen. 7th Gen. ~
Output Capacity of PE System (VA) 100M 10M 1M 10OK 10K 1K 100 10 Possible Enhancement of Power Device Application Range by SiC Thyristor Bipolar solution Power Transmission Triac GTO GCT Bipolar Transistor Module Large Drive Traction SiC potential Si SiC IPM IGBT Module New Application Trend Automotive Inverter UPS High speed Low loss Downsizing High temp. operation Discrete IGBT Power Supply Communication MOSFET 10 100 1K 10K 10OK 1M Operation Frequency (Hz) Industrial Equipment Power Supplies Medical Equipment Consumer Electronics Unipolar solution Heavy PE Systems Traction PE Automotive PE
Major Technological Trends Higher operating temperature Lower storage temperature New Material Higher power density and integration Lower losses Robustness / Wider SOA Higher PC/TC capability Improved heat dissipation Balance Packages featuring compatibility Eoff Von SOA