SHIBAURA CDE-80N Configuration & Installation Test Data Customer: TOWER Location: MEGDAL HAMEK Vendor install: Metron
Post Facilities Start-Up Checklist 1. Facilities 1.1 Power L1-L2: L2-L3 L1-L3: X1-Y1:100v 1.2 Cooling H 2 O inlet pressure: flow:6sl/min outlet pressure: 1.3 Exhaust main body:-0.04 MFC box:-0.1 2. Chiller Unit type:hx-75 - Not exist manuf.:neslab temp range:5 power:35 3. Pumping System L1-L2: L2-L3: L1-L3: type:ih 1000 - Not Exist manuf.:edwards inlet pressure:6.9 barg flow:4sl/min 4. Microwave Generator 4.1 microwave Controller model:sgpsp2-10b 4.2 microwave oscillator model:sfx-0190 4.3 auto tuner controller model:cmc-10a 4.4 tuner unit model:sma-10a serial number:tc3322a1 serial number:tc3322b3 serial number:mf237702 serial number:mf237601-2 -
Chamber Pump Down Test 1. Cassette Chamber 2. Transfer Chamber 3. Etch Chamber base prs:1.7 base prs:1.5 base prs:6.51e-1 slow exh time:120 pressure vs. time pressure vs. time pressure vs. time time pressure time pressure time pressure (sec) (Pa) (sec) (Pa) (sec) (Pa) 60 2.05 60 1.76 60 7.81E-1 120 2.45 120 1.76 120 1.04 180 2.74 180 1.76 180 1.17 240 2.98 240 1.76 240 1.43-3 -
Pressure Build Up Test 1. Cassette Chamber 2. Transfer Chamber 3. Etch Chamber base prs:8.14e-1 base prs:1.5 base prs:6.51e-1 chamber: 0,06m 3 chamber: 0,024m 3 chamber: 0,01m 3 Leakrate Q = P * V T 1.65E-4Pa*m 3 /sec 4.83E-6Pa*m 3 /sec 3.15E-5Pa*m 3 /sec specification: 3.00E -4 Pa*m 3 /sec 3.00E -4 Pa*m 3 /sec 1.00E -4 Pa*m 3 /sec pressure vs. time pressure vs. time pressure vs. time time pressure time pressure time pressure (sec) (Pa) (sec) (Pa) (sec) (Pa) 60 1.26 60 1.74 60 7.81E-1 120 1.55 120 1.76 120 1.04 180 1.76 180 1.76 180 1.17 240 1.91 240 1.76 240 1.43 300 2.03 300 1.79 300 1.56 360 2.16 360 1.79 360 1.76 420 2.24 420 1.81 420 2.02 480 2.33 480 1.83 480 2.15 540 2.41 540 1.83 540 2.34 600 2.47 600 1.84 600 2.54-4 -
Mass Flow vs. Pressure MFC type:fc-780c APC Valve: 1000 base prs:0.7 MFC# 1 Type 02 Sccm 300 S/N setpoint actual E/C press (Pa) MFC# 2 Type CF4 Sccm 400 S/N setpoint actual E/C press (Pa) 10% 30 32 4.7 10% 40 43 5.4 25% 75 77 7.75 25% 100 103 8.72 50% 150 152 11.2 50% 200 202 12.7 75% 225 227 13.9 75% 300 302 15.8 100% 300 300 16.2 100% 400 400 18.7 MFC# 3 Type N2 Sccm 500 S/N setpoint actual E/C press (Pa) 10% 50 53 5.9 25% 125 129 9.51 50% 250 254 13.8 75% 375 379 17.2 100% 500 500 20.1-5 -
APC vs. Pressure Characteristic gas condition: CF 4 / O 2 = 200 / 100 sccm APC position pressure Pa (DG1) APC position pressure Pa (DG1) 0 ALARM! 50 ALARM! 550 17.9 100 179 600 17.3 150 99.5 650 16.9 200 62.2 700 16.5 250 43 750 16.3 300 32.3 800 16.2 350 26.2 850 16.1 400 22.5 900 16 450 20.2 950 16 500 18.8 1000 16-6 -
Microwave Calibration and Discharge Inspection Data gas condition: CF 4 / O 2 / N 2 = 250 / 250 / 100 etch pressure: 70 Pa 1. output calibration power (W) PF out (V) power (W) PF out (V) 100 1 600 6 200 2 700 7 300 3 800 8 400 4 900 9 500 5 1000 9.98 2. input calibration power (W) PF in (V) power (W) PF in (V) 50 0.5 550 5.5 100 1 600 6 150 1.5 650 6.5 200 2 700 7 250 2.5 750 7.5 300 3 800 8 350 3.5 850 8.5 400 4 900 9 450 4.5 950 9.5 500 5 1000 9.98 3. discharge inspection setpoint microwave fwd pwr (W) microwave ref pwr (W) microwave anode (ma) microwave anode (V) screen fwd pwr (W) screen fwd pwr (W) 100 98.9 9.2 27.2 3320 101 3 200 198.8 1.6 101.6 3346 201 0 300 298.7 1.9 148.8 3319 301 0 400 398.3 1.5 197.3 3300 402 0 500 498.8 1.6 246.4 3314 502 0 600 598.7 1.6 292.8 3264 602 0 700 698.7 1.8 338.9 3247 703 0 800 798.8 1.9 387.2 3236 803 0 900 898.8 1.4 429.8 3307 903 0 1000 996.9 1.7 478.3 3282 1000 0 REMARK: the voltage on paragraph 1 and 2 are for input and output voltage that are set in the software for accepting the correct power and they referring only to the generator that makes this records. - 7 -
Water Circulator Temperatur Check chiller setpoint chiller display cde-80 display ( o C) ( o C) ( o C) 15 15 14 20 20 19 25 25 24 30 30 29-8 -
Data Set Check Sheet 1.sequence parameter set build up exh time 120sec CC base press 7Pa build up sample time 60sec TC base press 50Pa build up leakrate CC 3E-4Pa*m 3 /sec EC base press 1Pa build up leakrate TC 3E-4Pa*m 3 /sec CC slow vent time 60sec build up leakrate EC 1E-4Pa*m 3 /sec CC & TC slow vent time 120sec slow exh time 60sec CC & TC & EC slow vent time 120sec 2. Life Time Set actual set quarz tube 0.1 11 hour Elede 0.3 9999.9 hour Microwave 265 99999 hour Pump 112 9999 hour 3. Permissible Error Limit Set allowable Start-up stable Varying MFC 1 5% 10sec 5sec 5sec MFC 2 5% 10sec 5sec 5sec MFC 3 5% 10sec 5sec 5sec MFC 4 % sec sec sec MFC 5 % sec sec sec power 3% 10sec 5sec 5sec PF/PR 3% 10sec 5sec 5sec press 20Pa 15sec 5sec 5sec DCS 100Pa 10sec 5sec 5sec - 9 -
Data Set Check Sheet 4. Teaching Elevator Data Arm 1 Arm 2 Trans Pos. +2090 +2080 Lowest Wafer +6397 Wafer Thickness +300 Arm 1 Data Ext Rot Elevator +13590 +54680 Pusher 1 +14566 +4680 Arm 2 Data Ext Rot Elevator -13515 +4730 Pusher 1-14497 +54730-10 -
EMO- INTERLOCKS LOCATION Side Panel EMO Local controller EMO Remote controller EMO Elcatrical enclousre EMO Side panel interlocks Power shutoff interlocks Rear panel EMO STATUS OK OK OK OK OK OK OK - 11 -
Power Supply Check Set Actual 5 V 5V 12V 11.96V +15 V +14.93V -15V -15.03V 24V 24.19V - 12 -
Microwave Power Leak Test gas condition: CF 4 / O 2 / N 2 = 400 / 400 / 100 etch pressure: 70 Pa etch power: 800 W microwave leak detector type: leakrate mw/cm 2 A B C D E F 0 0 0 0 0 0 G H I J K 0 0 0 0 0-13 -
1000 Wafer Running Transfer Test gas condition: CF 4 / O 2 / N 2 = 250 / 250 / 50 etch pressure: 70 Pa etch power:400 W etch time:10 sec trial # 1 Lot finished comment Lot finished comment 1 21 2 22 3 23 4 24 5 25 6 26 7 27 8 28 9 29 10 30 11 31 12 32 13 33 14 34 15 35 16 36 17 37 18 38 19 39 20 40-14 -
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