Semiconduttori di Potenza per Automotive 17 th November 2016
Topics 2 ST/PTD Introduction Focus on Traction Inverter SiC MOSFET features SiC MOSFET in traction inverter Package options Focus on OBC Conclusion
Flexible and Independent Manufacturing 3 France (Crolles, Rousset, Tours) Italy (Agrate, Catania) China (Shenzhen) Morocco Malta Malaysia Philippines Singapore Front-End Back-End
PTD Power Transistors Division as part of Automotive & Discrete Group 4 A Complete Portfolio for Power Applications Power Discrete and Intelligent Power Module JAPAN & KOREA 9,2% AMERIC A 15,1% Intelligent Power Module Power MOSFETs Si and SiC based IGBTs Power Module GC&SA 51,4% EMEA 24,4% Major Application Energy Management Lighting Server Solar 600M$ in 2015 Motor Control AC/DC & Isolated DC/DC Power Supply Automotive Home appliance
Socio-Economic Megatrends & Power Discretes Population and Aging Megacities: Mobility, Communication, Buildings Energy: Availability, Efficiency and Cost GDP growth 1990 2007 New Economies Power Transistors Focus Power & Energy Hybrid & Electric Vehicles Lighting, Building Automation Industrial Motor Drives * Lighting including LED only, no ballasts or HID
Power Transistors applications for Automotive from ICE powered Cars to E-Cars 6 LV Power MOSFET Up to to 200V Medium Voltage MOSFET Up to 400V Power Bipolar and Darlington Up to 100V High Voltage MOSFET From 400V up to 1500V IGBT Planar PT and Trench Gate Field Stop up to 1700V EPS, ABS/ESP, Start&Stop, Airbag, water/oil pump driving, LED Lighting Piezo Injection, E-bike/Escooter General Purpose switch, current buffer Injection, Discharger, HID Lighting Ignition, Injection, HID Lighting Exponential growth in the Electric Car, several subsystems to cover: Traction inverter, on-board charger, charging station, auxiliary DC-DC, Aircon and auxiliary inverter, Battery Junction BOX. SiC MOSFET From 650V up to 3300V
Automotive Megatrends: Semiconductor Content Increasing 7 Silicon Pervasiveness: 2015 semiconductor content per vehicle Safer and More Connected Greener Driving Experience $500 $150 $200 $1.390 $50 $60 $100 $330 Semiconductor content ICE Standard Car Powertrain Chassis Infotainment & Connectivity Application Megatrend ADAS Electrification Premium add-on Semiconductor content electric Premium Car Traction will continue to drive the highest demand for power devices, with hybrid and pure electric drivetrains exhibiting the highest growth in power semiconductor demand (source: Strategy Analytics) Toyota will use SiC for the next gen vehicles (main inverter and OBC)
e-vehicles block diagram HEV/EV 8 HEV ECU Aux LV battery (12V or 24V) El motor / generator ICE (no EV) DC/DC converter DC/DC converter Traction inverter Hybrid drive unit (HDU) EPS, ICE cooling inverters On-board charger Aircon inverter Auxiliary inverter M M AC loads HV Bus Cells balancing HV battery pack (200V to 450V) Battery module Silicon content Mechanical or electro-mechanical Batteries (ACinput) Fast charging (DC)
Focus on Traction Inverter
Power Transistors offer for Traction Inverter DC voltage up to 450V 600-650V rated devices 10 Inverter stage Permanent magnet M Traction Inverter Customized 650V TGFS IGBT based on mission profile 650V SiC MOSFET
Power Transistors offer for Traction Inverter DC voltage up to 800V 1200V rated devices 11 HV DC/DC converter Inverter stage Permanent magnet M HV Bidirectional DC-DC and Traction Inverter Customized 1200V TGFS IGBT based on mission profile 1200V SiC MOSFET
Silicon-Carbide MOSFET introduction 12 Extremely low Switching Losses and Low Ron especially at very high Tj Higher operating frequency for Smaller and ligther systems Thermal Performance High operating temperature ( T jmax = 200 C) Reduced cooling requirements Increased life time Easy to Drive Fully compatible with standard Gate Drivers Very fast and robust intrinsic body diode More compact inverters
SiC Positioning vs. IGBT 13 Parameter Si IGBT SiC MOSFET Switching Principle Normally-OFF Normally-OFF Control parameter Voltage Voltage Control power Low Low Control circuit Simple Simple On-resistance Low Low Switching speed Medium Fast Switching loss Medium Extremely low Efficiency at low current Low High Operating junction temperature Up to 175 C > 200 C Extremely low Power losses SiC Main Benefits at Component Level Reduction of cooling requirements and heatsink sizes High operating frequencies Reduction of bulky passive components Extended junction temperature up to 200 C For extended reliability and reduction of heat-sink sizes
ST SiC Advantages in high power INVERTERS 14 Higher efficiency vs. Si IGBT at low and medium loads MOSFET/unipolar conduction mechanism and specific R DS(on) Switching performance ON-resistance stability over wide temperature range (25-200 C) 200 C in conventional plastic package Reduced commutation speed to improve dv/dt, di/dt Enabling lower gate resistance for E off optimization at low frequency Gate oxide performance Proven reliability at both +22V and -10V gate drive (rated at 200 C) Safe negative gate drive prevents parasitic turn-on during off-state Body diode with low recovery charge Third quadrant operation requires no additional external fast-recovery diodes
[mωxcm 2 ] ST 1200V 2 nd Gen. SiC MOSFET R DS(on) *A (FOM) vs. temperature 15 R DS(on) x Area vs. temperature ST 2nd GEN Best Competitor 2 nd 2nd GEN GEN ST 1st GEN 16,00 14,00 12,00 10,00 8,00 6,00 4,00 2,00 0,00 0 25 50 75 100 125 150 175 200 Temperature [ºC] ST SiC 2 nd Generation FOM is two times better than competition at 150 C
Ron*Area (normalized value) SiC Trench MOSFET 16 Tatsuya Kimoto; Hiroki Yoshioka; T. Nakamura Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on Strength Well established expertise on Si-based Trench devices Opportunity Exploit mobility increase along vertical channel 1.0 0.5 Planar MOSFET Trench MOSFET Target To halve Planar MOSFET on-resistance*area First prototypes by the end of Q1 2017
Manufacturing Strategy Wafer Size Evolution 17 2003 2 2006 3 2011 4 2016 6 In progress 3 SiC 4 SiC 6 SIC Move to 6 2 in SiC 2016 : Fab is fully equipped to process at 6 State-of-art Epi reactor already installed in ST facility : make epy in house
1200V SiC MOSFET vs Si IGBT in Traction Inverter INTRODUCTION 18 Both Si and SiC solutions have been dimensioned in order to get a junction temperature equivalent to roughly 80% of the absolute maximum rating (140 C for IGBT, 160 C for SiC MOSFET) The overall working conditions are below reported: Peak-power condition at 180kW (198A rms - 10 seconds). Normal working condition up to 90kW (94A rms ). SiC MOSFET is exceptional at low load thanks to V DS(on) linear with current but must be sized properly to manage overcurrent. Static drop SiC vs IGBT SiC Advantage area IGBT advantage area
1200V SiC MOSFET vs Si IGBT Application simulation in Traction Inverter (PEAK POWER 190kW, 8kHz) 19 * Typical power losses values at peak power 190kW Loss Energy Total chip-area Si-IGBTs + Si-diodes Solution 400 mm² (IGBT) + 200mm 2 (diode) Full-SiC Solution 80 mm² > 7x lower SiC vs Si per switch (S1+D1) > 7x lower Conduction losses* (W) 121.9 192 Switching losses* (W) 357 31 (S1+D1) Total losses* (W) 479 223 Junction Temperature ( ) 135.1 154.8 > 11x lower > 50% lower T J ~ 80% Tjmax Topology: Three phase inverter PWM Strategy: Bipolar DC-link voltage: 850V dc Switching frequency: 8kHz T j 80%*T jmax at any condition P OUT =90kW (peak power 180kW) SiC MOSFET solution must be sized carefully by taking into account its exceptional R ds(on) x Area FOM.
SiC solution: lower losses and higher efficiency 100% LOAD 90kW,8kHz 20 From about 2% at max load up to 8% higher efficiency at low load!!! * The simulated efficiency takes into account only the losses due to the switches and diodes forming the bridge inverter
Si Solution IGBT+ Diode SiC solution: Power losses Reduction PEAK POWER 190kW, 8kHz SiC Solution 21 4x20 mm 2 SiC solution vs Si Solution Power losses 500 400 4x100 mm 2 + 4x50 mm 2 300 200 100 0 Conduction losses* (W) Turn-on losses* (W) Turn-off losses* (W) Diode s conduction losses* (W) Diode s Qrr losses* (W) Total losses* (W) * Typical power losses values Si-IGBTs + Si-diodes Solution Full-SiC Solution
A projection for 2025 1200V SiC based Traction Inverter: how to benefit from SiC 22 Challenge/target to reach 80% volume + 5-10% fuel improvement Traction inverter Low Frequency Operation High Power High Thermal environment DC/DC Converters High Frequency High Passive Content Compactness Smaller and lighter cooling systems Much smaller Silicon size Introducing SiC Smaller Passive components Light & compact systems
A projection for 2025 How to get to 80% Inverter volume reduction? 23 Higher switching frequency brings 8 times smaller passives DC/DC converter + Main Inverter Introducing SiC MOSFET 60% Volume Reduction Introducing Tjmax=250 C 80% Volume Reduction X5 form factor reduction Average 80% loss reduction brings 80% smaller Inverter cooling system
Advanced Discrete as alternative to Modules for Electric Vehicles main inverter 24 200 A Irms 400 A Irms MAX247 option with Clip SMD discrete option with Clip 4 Leads option G D S It is not the final form factor. Just for reference ST will offer Sintering process capability in 2017 Temperature cycling capability comparison between a sintered and a soldered die (Sintered is 5x higher).
Extended Mileage SiC Value Proposition in EV/HEV Main Inverter 25 +8 % Up to 8% efficiency improvement (80% lower loss) Longer Battery life Longer autonomy Smaller Battery/Lower Overall System Cost Smart Power ICs Innovative active cell load balancin More than 50% cooling system downsize on Inverter side Smaller and Lighter Power Unit Body diode with low recovery charge: No need external freewheeling diode. Much smaller semiconductor area Ultra compact solution Reduced DeltaTj Increased number of Power Cycles
STA5 Prototype Power Module (SiC) 26 High End Six Pack Power Module 1200V SiC MOSFETS (30 mω) 8 paralleled SiC MOSFETs per switch (eq. 3.75mΩ) Designed for Electric Traction AlN DBC High Current Capability Isolated AlSiC Base Plate with Fins Liquid Cooled Integrated NTC Sensors Gate resistors embedded Desaturations diodes embedded 48 SiC MOSFET Dice «Long signal pins» for smart plugin
1200V Discrete Inverter 27 Rated power 50kW Inverter for traction Discrete IGBT Liquid Cooled 6 IGBT per switch Main Products Discrete IGBT STGYA120M65DF2AG (650V IGBT,120 A low loss) STGAP1S (gapdrive ) 3W DC/DC Monholitic module (+15/-10 V output) The high level of modularity of the Platform allow to test different devices into a complete Inverter system Control + Driving + Power : stacked system.
Focus on OBC
Plug-in battery charger AC input (on Board Charger) PLM communication CAN bus communication 29 AC DC Plug-in Battery Charger Key Features: Power level up to 20kW Input voltage 230 Vac (European mains) or 120Vac 400 Vac Three phase Voltage output range: 250VDC-500VDC Main blocks: PFC + isolated DC/DC converter Automotive grade components (mounted in the car) Charging time from 2 to 10 hours depending on the battery
Single phase AC input main topology 30 LLC FB DC/DC AC or or MDmesh TM DM2, available MDmesh TM M6, see roadmap MDmesh TM DM6 with fast diode, see roadmap Load Gate driver Gate driver Gate driver Gate driver Gate driver Vbatt = [250V-500V] Gate driver Single or interleaved PFC Single or Interleaved Bridgeless PFC MDmesh TM M5, available MDmesh TM M6, see roadmap MDmesh TM M9, see roadmap 650V SiC MOSFET, see roadmap or or Phase Shift FB DC/DC MDmesh TM DM2, available MDmesh TM DM6 with fast diode, see roadmap AC Gate driver Gate driver Gate driver Gate driver Gate driver Vbatt = [250V-500V] Gate driver
A Single-phase PFC topology ENABLED by SiC MOSFET Totem-pole Bridgeless PFC Boost rectifier 31 AC Gate driver Rectifier Output Large reverse recovery charge (Q rr ) of existing silicon MOSFET makes the CCM operation of the totem-pole bridgeless PFC impractical. Since this topology requires a fast switching device with ultra-fast free-wheeling diode, SiC MOSFET is the best candidate Gate driver Single or interleaved PFC Single or Interleaved Bridgeless PFC 650V HB series TGFS IGBTs, available 650V SiC MOSFET, see roadmap
System cost ($) Key Challenge in Electric Vehicles Conclusions Mileage extension 32 Performance Power Unit Downsizing Cost Efficiency Increased Power Density 6 inches wafers from 2017 Cost competitiveness SiC Si IGBT SiC MOSFET Si +6 % AVG Power 100mm 2 20mm 2 Power Control Unit X5 form factor redux 8 inches wafers under study Cost competitiveness Extended Mileage Solution/Cost Si SiC today year
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