Description The IG26-series is pnchromtic PIN photodiode with nominl wvelength cut-off t 2.6 µm. This series hs been designed for demnding spectroscopic nd rdiometric pplictions. It offers excellent shunt resistnce in combintion with superior responsivity over wide rnge. Fetures 50 % cut-off wvelength > 2.45 µm Typicl pek responsivity:.45 A/W Excellent temperture stbility Reduced edge effect - Applictions Spectrophotometer Diode lser monitoring Non-contct temperture mesurement Flme control Moisture monitoring Versions Uncooled TO-cn, chip only, digitl module Cooled TE, TE2, TE3
Opticl Chrcteristics, Specifictions @ 25 C c Prt Number 50% Cut off Wvelength Pek Wvelength Pek Responsivity,b Responsivity @ 520 nm,b,d Responsivity @ 600 nm,b Responsivity @ 900 nm,b Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. S4i 250 IG26X500S4i 500 IG26X000S4i 000 IG26X300S4i 300 >2.45 2.25+/- 0..30.50 TBD 0. 0.7.0.08.36 Gi 2000 Gi 3000 Prmeter tested on btch level t T =25 C. b Responsivity mesured t 0 V Bis. c Dt re prior to window integrtion. d Preliminry dt Electro-Opticl Chrcteristics, Specifictions @ 25 C Prt Number Shunt Impednce @ = 0 mv b [kohm] Drk Current @ = 0.25 V b [µa] Pek D* f= khz [cm Hz ½ /W] Pek NEP f= khz [W/Hz ½ ] Min. Typ. Typ. Mx. Min. Typ. Mx. Typ. S4i 250 25 60 2 8 8.3 E+0.2 E+ 6.0 E-3 4.2 E-3 IG26X500S4i 500 0 25 4 25 7.4 E+0.2 E+.0 E-2 6.0 E-3 IG26X000S4i 000 3 9 8 75 5.7 E+0.0 E+.8 E-2.0 E-2 IG26X300S4i 300 4 5 50 3.7 E+0 7.6 E+0 3.0 E-2.5 E-2 Gi 2000 0.6.5 30 300 3.6 E+0 5.8 E+0 3.9 E-2 2.4 E-2 Gi 3000 0.25 0.7 75 750 2.8 E+0 4.8 E+0 6.0 E-2 3.6 E-2 Prmeter tested on btch level b Prmeter 00% tested 2
Electricl Chrcteristics, Specifictions @ 25 C Prt Number Cpcitnce @ = 0 V [pf] Forwrd Voltge [V] Typ. Typ. S4i 250 35 IG26X500S4i 500 40 IG26X000S4i 000 580 IG26X300S4i 300 040 0.48 Gi 2000 920 Gi 3000 3200 Prmeter tested on btch level Thermoelectriclly Cooled InGAs Detectors Prt Number Operting Temperture [ C] Shunt Impednce @ = 0 mv b [kohm] Pek D* [cm Hz ½ /W] Pek NEP [W/Hz ½ ] Cpcitnce @ = 0 V [pf] Min. Typ. Typ. Typ. Typ. T7 250 300 625.9 E+.2 E-3 35 IG26X000T7 000 80 40 3.6 E+ 2.4 E-3 580 IG26X300T7 300-20 5 44.5 2.6 E+ 4.3 E-3 040 T7 2000 3 33 3.5 E+ 5.0 E-3 925 T7 3000 3.5 9.2 2.8 E+ 9.6 E-3 3200 T9 250 000 2000 4.0 E+ 5.6 E-4 35 IG26X000T9 000 300 590 7.4 E+.2 E-3 580 IG26X300T9 300-40 65 95 5.5 E+ 2.0 E-3 040 T9 2000 60 35 7. E+ 2.5 E-3 920 T9 3000 5 32 5.2 E+ 5. E-3 3200 Prmeter tested on btch level b Prmeter 00% tested 3
Absolute Mximum Rtings Min. Mx. Storge Temperture [ C] -55 +25 Operting Temperture [ C] -40 +85 Reverse Bis, cw [V] - Forwrd Current, cw [ma] - Soldering Temperture, 5 sec. [ C] - 260 ESD Dmge Threshold, Humn Body Model Clss 0*, [V] 0 <250 TE Cooler Voltge [V] - 3.7 TE Cooler Current [A] -. *ANSI/ ESD STN5. -2007 4
Fig. : Spectrl Response Spectrl Response Zoom 2 Typicl, T = 25 C,6 Typicl,75,4,5,2 Responsivity (A/W),25 0,75 0,5 Responsivity (A/W) 0,8 0,6 0,4 0,25 25C -20C -40C 65C 0 450 700 950 200 450 700 950 2200 2450 2700 2950 Wvelength (nm) 65 C 0,2 25 C 0-40 C -20 C 2200 2400 2600 Wvelength (nm) Fig. 2: Drk Current vs. Reverse Voltge Fig. 3: Shunt Resistnce vs. Temperture,00E-03 Typicl, T = 25 C,00E+04 Typicl, Vr = 0 mv Drk Current (A),00E-04 IG26X300,00E-05 IG26X000,00E-06,00E-07,00E-08 0 0,05 0, 0,5 0,2 0,25 0,3 Reverse Voltge (V) Shunt (kω),00e+03,00e+02,00e+0,00e+00,00e-0,00e-02-40 -20 0 20 40 60 80 00 Temperture ( C) IG26X000 IG26X300 Fig. 4: Detectivity vs. Shunt x Are Fig. 5: Cpcitnce vs. Reverse Voltge 0 Typicl, T = 25 C,00E+04 Typicl Detectivity D* x 0 0 (cm Hz /2 / W) 9 8 7 IG26X000 Cpcitnce (pf),00e+03,00e+02,00e+0 IG26X300 IG26X000 6 40 45 50 55 60 Ro Are (cm² Ω),00E+00 0 2 3 4 5 6 Reverse Voltge (V) 5
Fig. 6: Responsivity Temperture Coefficient I Fig. 7: Responsivity Temperture Coefficient II 0,05 Typicl 0,95 Typicl 0,03 0,75 % Chnge / C 0,0-0,0-0,03 25 C to 65 C -40 C to 25 C % Chnge / C 0,55 0,35 0,5 25 C to 65 C -40 C to 25 C -0,05 400 600 800 000 200 400 600 800 2000 2200 Wvelength (nm) -0,05 2200 2250 2300 2350 2400 2450 2500 2550 2600 Wvelength (nm) Fig. 8: Smple Pulse Response Fig. 9: Linerity,2 05 Typicl, Wvelength = 30 nm Normlized Response (.u.) 0,8 0,6 0,4 0,2 Typicl, λ Test =30nm, Frequency = 00kHz RL = 50Ω, Bis = 0V Reltive Sensitivity (%) 00 95 90 85 80 75 0 0 2 3 4 5 6 7 8 9 0 Time (μs) 70 0 2 4 6 8 0 2 Incident Light Level (mw) 6
Nomenclture C- I G 2 6 X 2 5 0 S 4 i Type Pckge Style Chip only Extended InGAs PIN Photodiode 250 = 250 µm 500 = 500 µm S4i - TO-46, isolted S4ix - TO-46, no window 000 = mm Gi - TO-39, isolted 300 =.3 mm Gix - TO-39, no window 2000 = 2 mm T7 - TO-37, single stge TEC 3000 = 3 mm T9 - TO-66, dul stge TEC M2-2 pd PCB SMD L5 - TO-46 lens cp Stndrd window: Borosilicte glss Pckge drwings, TEC nd thermistor curves cn be found on seprte dtsheet. Product Chnges LASER COMPONENTS reserves the right to mke chnges to the product(s) or informtion contined herein without notice. No libility is ssumed s result of their use or ppliction. Ordering Informtion 702/6 / V4 / HW / lcdgi/ig26-series Products cn be ordered directly from LASER COMPONENTS or its representtives. For complete listing of representtives, visit our website t