photodiodes Description PerkinElmer Optoelectronics offers a broad array of Silicon and InGaAs PIN and APDs.

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1 photodiodes Features Low-cost visible and near-ir photodetector Excellent linearity in output photocurrent over 7 to 9 decades of light intensity Fast response times Available in a wide range of packages including epoxy-coated, transfer-molded, cast, and hermetic packages, as well as in chip form or surface mounting technology Low noise Mechanically rugged, yet compact and lightweight Available as duals, quads or as linear arrays Usable with almost any visible or near-infrared light source such as solid state laser diodes, LEDs, neon, fluorescent, incandescent bulbs, lasers, flame sources, sunlight, etc. Can be designed and tested to meet the requirements of your application Typical Applications Fiber-optic communications Instrumentation High-speed switching Spot position tracking and measurement Photometry Data transmission UV light meters Fluorescent light detection Laser range finding Barcode scanning Laser safety scanning Distance measurement Datasheets available upon request. Description PerkinElmer Optoelectronics offers a broad array of Silicon and InGaAs PIN and APDs. InGaAs Avalanche Photodiodes The high-quality InGaAs avalanche photodiodes (APDs) are packaged in hermetically sealed TO cans and ceramic blocks designed for the 900 to 1700 nm wavelength region. InGaAs PIN Photodiodes High-quality Indium Gallium Arsenide photodiodes designed for the 900 to 1700 nm wavelength region, these photodiodes are available in standard sizes ranging from 50 microns to 5 mm in diameter. Packages include ceramic submount, TO packages, and chip form. Silicon Avalanche Photodiodes These are reliable, high-quality detectors in hermetically sealed TO packages designed for high-speed and high-gain applications. A reach-through structure is utilized which provides very low noise performance at high gains and a full range of active areas. Silicon PIN Photodiodes Offered for low- to high-speed applications, these PINs are designed for the 250 nm to 1100 nm range. Standard sizes range from 100 microns to 10 mm in diameter. Silicon PN Photodiodes This format includes a variety of high-volume, low-cost silicon photodiodes that meet the demanding requirements of today s commercial and consumer markets. Selective Photodiodes These GaP and GaAIAs-based photodiodes provide high sensitivity and a narrow spectral response without additional filtering. As SMD components they are ready for automated treatment. Alternate Source/Second Source Photodiodes PerkinElmer s nearest equivalent devices are selected on the basis of general similarity of electro-optical characteristics and mechanical configuration. Interchangeability in any particular application is not guaranteed, suitability should be determined by the customer's own evaluation. Detector Modules Preamplifier modules are hybrid devices with a photodiode and a matching amplifier in a compact hermetic TO package. An integral amplifier allows for better ease of use and noise bandwidth performance. 14-pin, DIL, and/or fibered packaged modules are available on a custom basis. Please ask for our RoHs compliant products. 8

2 Photodiodes InGaAs APDs 900 nm to 1700 nm Photo Sens. Resp. Dark Spect. Noise Cap. Bandwidth VOP Part Standard Diam. A/W Curr. Curr. khz GHz 1550 nm for Number Package nm Id (na) In (pa/ Hz) Cd (pf) into 50 W pw/ Hz Gain=10 V C30644E TO window C30644ECER Ceramic C30645E TO window C30645ECER Ceramic C30662E TO window C30662ECER Ceramic Indium Gallium Arsenide PIN Photodiodes, Large-Area, and Small-Area Indium Gallium Arsenide APDs High responsivity Low capacitance for high bandwidths Available in various hermetic packages. InGaAs PIN Large-Area 900 nm to 1700 nm Photo Sens. Resp. Dark Cap. Bandwidth Max. Power Bias Volt Part Standard Diam. A/W Curr khz MHz for.15 db for These Number Package nm Id (na) pw/ Hz Cd (pf) into 50 W Linearity (dbm) Specs V C30619G TO < >+13 5 C30641G TO < >+13 2 C30642G TO C30665G TO C30723G TO InGaAs PIN Small-Area 900 nm to 1700 nm Photo Sens. Resp. Dark Spect. Noise Cap. Bandwidth Bias Volt Part Standard Diam. A/W Curr. Curr. khz GHz 1550 nm for These Number Package nm Id (na) In (pa/ Hz) Cd (pf) into 50 Ω pw/ Hz Specs V C30616ECER Ceramic < >3.5 < C30637ECER Ceramic < < C30617ECER Ceramic < < C30617B Ball lens < < C30618ECER Ceramic C30618G TO window Selective Photodiodes Based on III V Materials Selective Photodiode SR10SPD Surface mounting device High sensitivity Narrow spectral response without additional filtering Reverse Dark Active Rise/Fall Spectral Range Part Voltage Current Area Sensitivity max. Number Package* (V) (na) (mm 2 ) (A/W) tr/tf (us) (nm) SR10SPD SMD (A3) N/A SR10SPD SMD (A3) N/A SR10SPD SMD (A3) N/A * All packages are listed on our website. 9

3 photodiodes Si APD Standard Types 400 nm to 1100 nm Photo Resp. Dark Spect. Noise Cap. Resp. VOP Part Standard Sens. Diam. 900 nm Curr. Curr. khz: Time 900 nm Range C30817E TO C30872E TO C30902E TO (@ 830 nm) (@ 830 nm) C30902S TO (@ 830 nm) (@ 830 nm) C30916E TO Silicon Avalanche Photodiodes Hermetically sealed packages Si APD Arrays Quadrant and Linear 400 nm to 1100 nm Photo Dark Spect. Noise Cap. Resp. VOP Part Standard Sens. Diam. Resp. Curr. Curr. khz Time NEP Range C30927E-01 TO total 15 (@1060 nm) (@1060 nm) C30927E-02 TO total 62 (@900 nm) (@900 nm) C30927E-03 TO total 55 (@830 nm) (@830 nm) C30985E Custom 0.3 pitch 31 (@830 nm) (@830 nm) Si APD Low Cost, High Volume 400 nm to 1000 nm Photo Resp. Dark Spect. Noise Cap. Resp. VOP Part Standard Sens. nm Curr. Curr. khz Time 900 nm Range C30724E TO (@ M=15) C30724P Plastic (@ M=15) C30737E TO (@ I-800 nm (@ 800 nm M=100) M=100) Si APD TE-Cooled Photo Resp. Dark Spect. Noise Cap. Resp. ADP VOP Part Standard Sens. nm Curr. Curr. khz Time 830 nm Range C30902S-TC TO C30902S-DTC TO Test conditions: T = 0ºC for -TC and -20ºC for -DTC ADP VOP Range: temperature dependent 10

4 Photodiodes Si APD NIR-Enhanced 400 nm to 1100 nm Photo Resp. Dark Spect. Noise Cap. Resp. VOP Part Standard Sens. nm Curr. Curr. khz Time 900 nm m=15 Range C30954E TO C30955E TO C30956E TO Silicon Avalanche Photodiodes Low cost, high volume Si APD Lightpipe Photo Resp. Dark Spect. Noise Cap. Resp. VOP Part Standard Sens. nm Curr. Curr. khz Time 830 nm Range C30921E TO C30921S TO Si APD Radiation Detection Photo Dark Spect. Noise Cap. Resp. VOP Part Sens. Diam. Resp. Curr. Curr. khz Time Peak Range Number mm A/W Id (na) In (pa/ Hz) Cd (pf) tr (ns) fw/ Hz V C x5 22 (@900 nm) (@900 nm) C x10 16 (@530 nm) (@530 nm)

5 photodiodes Si PINs Window and Lightpipe Packages, Fast Response 400 nm to 1100 nm Photo Resp. Dark Spect. Noise Cap. Resp. Bias Volt Part Standard Sens. nm Curr. Id Curr. khz Time 830 nm for These Number Package mm A/W na In (fa/ Hz) Cd (pf) tr (ns) fw/ Hz Specs V C30971E TO C30971EL TO-18 Lightpipe Test conditions: T = 22 C Si PINs Large Area, Fast Response 400 nm to 1100 nm Silicon PIN Photodiodes and Modules Broad range of photosensitive areas Low operating voltage Hermetically sealed packages SMD-Devices Photo Resp. Dark Spect. Noise Cap. Resp. Bias Volt Part Standard Sens. nm Curr. Id Curr. khz Time 900 nm for These Number Package mm A/W na (fa/ Hz) Cd (pf) tr (ns) fw/ Hz Specs V FFD-100 TO FFD-200 TO Test conditions: T = 22 C Si PINs Quadrant 220 nm to 1100 nm Photo Resp. Dark Spect. Noise Cap. Resp. Bias Volt Part Standard Sens. nm Curr. Id Curr. khz Time 900 nm for These Number Package total mm A/W na In (fa/ Hz) Cd (pf) tr (ns) fw/ Hz Specs V C30845E TO UV-140BQ-4 TO-5 1.3x1.3 (x4) <1 µsec 7 0 YAG-444-4A Custom 11.4 µm Test conditions: T = 22 C Si PINs Standard N-Type 400 nm to 1100 nm Si PIN Surface Mounting Device CFD10 Large radiant sensitivity area Photo Resp. Dark Spect. Noise Cap. Resp. Bias Volt Part Standard Sens. nm Curr. Id Curr. khz Time 900 nm for These Number Package mm A/W na In (fa/ Hz) Cd (pf) tr (ns) fw/ Hz Specs V C30807E TO C30808E TO C30822E TO C30809E TO C30810E Custom Test conditions: T = 22 C CR50DE Solid state ceramic chip High thermal conductivity Special type (CR50DE-DLF) with daylight filter on request Si PIN-Diodes Surface Mounting Devices Reverse Dark Active Rise/Fall Part Voltage Current Area Sensitivity Time Capacitance Number Package* (V) (na) (mm 2 ) (A/W) tr/tf (us) (pf) CFD10 SMD (D) CR10DE Ceramic SMD (A1) CR50DE Ceramic SMD (A2) SR10BP SMD (A3) N/A SR10BP-B SMD (A3) N/A * All packages are listed on our website. 12

6 Photodiodes Si PINs UV Enhanced, Low Noise 220 nm to 1100 nm Photo Resp. Shunt Spect. Noise Cap. Part Standard Sens. Diam. A/W Resis. Curr. khz: 900 nm Number Package nm Rd MW In (fw/ Hz) Cd (pf) fa/ Hz UV-040BQ TO UV-100BQ TO UV-215BQ TO UV-245BQ TO-8 4.4x UV-140BQ-2 TO-5 2.5x1.3 (x2) UV-140BQ-4 TO-5 1.3x1.3 (x4) Silicon PINs UV Enhanced Test conditions: T = 22 C Si PIN Modules Low Bandwidth 1 khz to 50 khz Photo Resp. Spect. Noise Bandwidth Bias Volt Part Standard Sens. Diam. MV/W Volt. Dens. 900 nm khz for These Number Package nm Vn (µv/ Hz) pw/ Hz into 50 W Specs V HUV-2000B Custom HUV-1100BG TO Si PIN & APD Modules High Bandwidth 40 MHz to 100 MHz PIN Photo Sens. Resp. Lin.Volt. Spect. Noise NEP Bandwidth Photo. Diod. Part or APD Standard nm Out. Swing Volt. nm MHz (3 db, Bias Number Used Package mm kv/w (V) 50 Ω Vn (nv/ Hz) pw/ Hz into 50 Ω) Volt V C30608E C30971 P (@830 nm) (@830 nm) (Si PIN) C30950E C30817 L (Si APD) C30919E C30817 N (temp. compens.) (Si APD) Typical T = 22ºC Si InGaAs APD Modules High Bandwidth 50 MHz to 200 MHz Photo Sens. λ Lin. Volt. Spect. Noise Bandwidth Photo.Diod. Part APD Optimum Standard Diam. of APD Out Volt. Dens. λ MHz Bias Number Chip Resp. λ Package mm (kv/w) Swing (V) Vn (nv/ Hz) fw/ Hz (-3 db) Volt V C C30902E 900 L R5B (Si APD) C C30817E 900 L R8A (Si APD) C C30954E 1060 L R8B (Si APD) C C30956E 1060 L A (Si APD) C C30645E 1550 L R08B (InGaAs APD) C C30662E 1550 L R2A (InGaAs APD) Typical T = 22ºC, 50 Ω load 13

7 photodiodes Silicon PN VTS Series (Low Capacitance, Large Area) Part I sc TC I sc I D TC I D R SH C J S R Re t R/t F V oc TC V oc Active Area Number ma %/ C na %/ C MΩ nf A/W A/(W/cm 2 ) µsec V mv/ C mm 2 VTS VTS VTS VTS VTS VTS VTS Silicon PN Photodiodes Electro-optical 25 C Table Key VTS Series I SC TC I SC I D TC I D R SH C J S R R E t R /t R V OC TC V OC Short-Circuit Current H=1000 lux, 2850 K I SC Temperature Coefficient H=1000 lux, 2850 K Dark Current H=0, V R =100 mv ID Temperature Coefficient H=0, V R =100 mv Shunt Resistance H=0, V R =10 mv Junction Capacitance H=0, V=0 V, 1 MHz 400 nm Responsivity 400 nm, 0.18 A/W Rise/Fall 1 KΩ load V R =1 V, 830 nm Open-Circuit Voltage H=1000 lux, 2850 K V OC Temperature Coefficient H=1000 lux, 2850 K Silicon PN VTA Series Arrays Part Active Area Pitch I L I D C J S R λ range λ p Number Elements mm 2 mm Uniformity na max. pf A/W nm nm VTA (max./min.) max. 0.3 min Electro-optical 25 C Table Key VTA Series Arrays I L uniformity 550 nm, 30 nw/cm 2 S R 550 nm C J H=0, V R =0 I D H=0, V R = 10 mv Active Area Per Element 14

8 Photodiodes Silicon PN VTP Series (Fast Response, High Dark Resistance) Part I sc TC I sc V oc TC V oc I D R SH C J Re S R λ range λ p V BR Active Area Number µa %/ C mv mv/ C na max. GΩ pf A/(W/cm 2 ) A/W nm nm V Package mm 2 VTP max Flat Sidelooker IRT 7.45 VTP100C max Flat Sidelooker 7.45 VTP max TO VTP max TO-46 Lensed 1.6 VTP1188S Lensed Ceramic 11 VTP1220FB 0.7 min max T1-3/4 flat IRB VTP min min max T1-3/ VTP1232F 21 min max T1-3/4 flat VTP min max T1-3/4 IRT VTP1332F 17 min max T1-3/4 flat IRT VTP3310LA max T VTP3410LA max T1 IRT VTP max Lensed sidelooker 7.45 VTP Ceramic 21 VTP4085S Ceramic 21 VTP max TO VTP max TO VTP max Lateral VTP max Lateral IRT VTP max @10 ma Lensed Sidelooker IRT 5.27 VTP max Ceramic 7.45 VTP max mm Ceramic 5.16 VTP max Mini-DIP 7.45 VTP max Mini-DIP IRT 7.45 VTP8740 TR min max min. SMT Clear plastic VTP8840 TR min max min. SMT IRT VTP max mm Ceramic 1.6 Electro-optical 25 C Table Key VTP Series I SC TC I SC V OC TC V OC I D R SH C J R E S R λ range λ p V BR IRT IRB Short-Circuit Current H=100 fc, 2850 K I SC Temperature Coefficient, 2850 K Open-Circuit Voltage H=100 fc, 2850 K V OC Temperature Coefficient, 2850 K Dark Current H=0, V R =10, 50, 100 V Shunt Resistance H=0, V=10 mv Junction Capacitance H=0, V=0, 3, 15 V Responsivity nm Peak Spectral Application Range Spectral Peak Breakdown Voltage Infrared Transmitting Infrared Blocking 15

9 photodiodes Silicon PN VTD Series (Alternate Source/Second Source) Part I sc TC I sc V oc TC V oc I D C J t R/t F S R λ range λ p V BR Active Area Number µa %/ C mv mv/ C na max. pf nsec A/W nm nm V Package mm 2 VTD31AA max min. Ceramic VTD min. Mini DIP 7.45 VTD34F min. Mini DIP IRT 7.45 VTD34SM SMT 7.45 VTD34FSM max min. SMT IRT 7.45 VTD TO-92 IRT (Round Lens) 7.41 VTD205K TO-92 (Round Lens) 7.41 VTD TO-92 IRT (Flat Lens) 7.41 VTD206K TO-92 (Flat Lens) 7.41 VTH Black Ceramic Electro-optical 25 C Table Key VTD Series / VTB Series I SC TC I SC V OC TC V OC I D R SH TC R SH C J t R /t R S R λ range λ p V BR Short-Circuit Current 940 nm, H=0.5 mw/cm 2 (VTD205, VTD206) H=5 mw/cm 2, 2850 K (VTD31AA, VTB Series) 100 Lux, 2850 K (VTD34, VTD205K) 100 Lux, 2856 K (VTD206K) I SC Temperature Coefficient 2850 K (VTD31AA, VTD34, VTD34F, VTB Series) 2856 K (VTD205, VTD205K, VTD206, VTD206K) Open-Circuit Voltage 940 nm, H=0.5 mw/cm 2 (VTD 205, VTD205K, VTD206, VTD206K) 2850 K (VTD31AA, VTD34, VTD34F) V OC Temperature Coefficient 2850 K (VTD31AA, VTD34, VTD34F, VTB Series) 2856 K (VTD205, VTD205K, VTD206, VTD206K) Dark Current H=0, V R =2 V (VTB Series) H=0, V R =10 V (VTD34, VTD34F, VTD205, VTD205K, VTD206, VTD206K, VTB100) H=0, V R =15 V (VTD31AA) Shunt Resistance H=0, V=10 mv (VTB Series) R SH Temperature Coefficient H=0, V=10 mv (VTB Series) Junction Capacitance H=0, V R =0 V, 1 MHz (VTD205, VTD205K, VTD206, 1 MHz, V R =0 V (VTD34, VTD34F) H=0, V=0 V (VTD31AA, VTB Series) Rise/Fall RL=50 Ω, V R =5 V, 850 nm (VTD205, VTD205K, VTD206, RL=1 kω Lead, V R =10 V, 833 nm (VTD34, VTD34F) Peak 365 nm (VTB Series) Spectral Application Range Spectral Peak Breakdown Voltage 16

10 Photodiodes Silicon PN VTB Series (Blue Enhanced, Ultra High Dark Resistance) Part I sc TC I sc V oc TC V oc I D R SH TC R SH C J S R λ range λ p V BR Active Area Number µa %/ C mv mv/ C pa max. G Ω %/ C nf A/W nm nm V Package mm 2 VTB max Flat Sidelooker 7.45 VTB TO VTB1012B TO-46 IRB 1.60 VTB TO VTB1013B TO-46 IRB 1.60 VTB TO-46 Lensed 1.60 VTB1112B TO-46 IRB Lensed 1.60 VTB TO-46 Lensed 1.60 VTB1113B TO-46 IRB Lensed 1.60 VTB Ceramic 14.8 VTB TO VTB5051B TO-5 IRB 14.8 VTB5051J TO VTB5051UV TO VTB5051UVJ TO VTB TO VTB6061B TO-8 IRB 37.7 VTB6061CIE TO VTB6061J TO VTB6061UV TO VTB6061UVJ TO VTB Ceramic 5.16 VTB mm Ceramic 5.16 VTB8440B mm Ceramic IRB 5.16 VTB mm Ceramic 5.16 VTB8441B mm Ceramic IRB 5.16 VTB mm Ceramic 1.60 VTB9412B mm Ceramic IRB 1.60 VTB mm Ceramic 1.60 VTB9413B mm Ceramic IRB