A Hybrid Si IGBT and SiC MOSFET Module Development
|
|
- Russell Potter
- 5 years ago
- Views:
Transcription
1 360 CES TRANSACTIONS ON ELECTRICAL MACHINES AND SYSTEMS, VOL. 1, NO. 3, DECEMBER 2017 A Hybrid Si IGBT and Module Development Puqi Ning, Member, IEEE, Lei Li, Xuhui Wen, Member, IEEE and Han Cao Abstract A compact wirebond packaged phase-leg SiC/Si hybrid was designed, developed, and tested. Details of the layout and gate drive designs are described. The IC chip for gate drive is carefully selected and compared. Dual pulse test confirmed that, the switching loss of hybrid is close to pure, and it is much less than pure Si IGBT device. The cost of hybrid is closer to Si IGBT. Index Terms Gate drive design, hybrid, SiC device. I. INTRODUCTION N recent years, the silicon carbide (SiC) power Isemiconductor has emerged as an attractive alternative that pushes the limitations of junction temperature, power rating, and switching frequency of silicon (Si) devices [1-3]. Some manufactures have successfully fabricated s which demonstrated these advantages. s have very low on-state voltage drop and faster switching speed compared to Si devices. However, the price of is commonly 3 to 5 times of the same rating Si IGBT device. Table I shows the comparison between some discrete SiC MOSFETs and some discrete Si IGBT [4]. Although the advanced properties of will lead converters to higher power density [3], some issues still need to be resolved to take full advantage of SiC. For example, almost all the SiC s are still using Si device based conventional packages. These packaging structures have large parasitic parameters (15~70 nh) and limit the operation temperature (less than 150 C). Furthermore, most of these SiC s are lack of reliability testing data. Unfortunately, these s are very expensive and some product s are listed in Table II [4]. This work is supported by The National key research and development program of China (2016YFB ), the Key Program of Bureau of Frontier Sciences and Education, Chinese Academy of Sciences (QYZDBSSW-JSC044), and the National Natural Science Foundation of China (No ). Puqi Ning is with the Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China and Collaborative Innovation Center of Electric Vehicles in Beijing ( npq@ mail.iee.ac.cn). Lei Li is with the Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China ( lilei@ mail.iee.ac.cn). Xuhui Wen is with the Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China ( wxh@ mail.iee.ac.cn). Han Cao is with the Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China ( chan@ mail.iee.ac.cn). TABLE I PRICE COMPARISON OF SIC AND SI DISCRETE DEVICES Part number Type & voltage Rated current Price ST SCT50N C C $ for 1 pc $ for 25 pc. IXYS IXFN70N120SK C C 109 $ for 1 pc $ for 25 pc. CREE C2M D C C 69.8 $ for 1 pc $ for 100 pc. Rohm SCT3030KL C C $ for 1 pc $ for 25 pc. Microsemi 56 C $ for 1 pc. APT80SM120J Infineon IGW60T120FKS A1 IXYS IXYH82N120C3 Si IGBT Si IGBT 40 C 100 C 60 C 160 C 82 C $ for 100 pc $ for 1 pc $ for 100 pc $ for 1pc $ for 1000pc. Reference [5], reported the development of a 1200 kv/880a SiC which can handle megawatt. The cost was estimated close to 2500$. Reference [6] presented the design and development of a HP1 package based SiC three-phase, and the power rating is / 300A for each phase-leg. There were 36 SiC MOSETs and 36 SiC diodes in the, which makes the cost for each close to 7000 $. An Int-A-Pak version was also presented in [6]. Without any SiC diode, the cost is cut to 5000$. All these s are too expensive for regular industrial applications. TABLE II PRICE COMPARISON OF SIC AND SI MODULES Manufacture and Part Rated voltage number and current Topology Price (US dollar) Infineon DF11MR12W1M1_B11 50 A Boost $ for 1 pc $ for 25 pc. Rohm BSM180D12P3C A Phase-leg $ for 1 pc $ for 5 pc. Rohm SiCMOSFET BSM300D12P2E A Phase-leg $ for 1 pc $ for 5 pc. CREE/ Wolfspeed SiC Phase-leg 330 $ for 1 pc. CAS120M12BM2 193 A Infineon Si IGBT Phase-leg $ for 1 pc. FF400R12KT3 Microsemi APTGLQ400A120T6G 580 A 625 A Phase-leg $ for 25 pc $ for 100 pc. Because of bipolar carriers and long tail current at turn-off phase, IGBTs can t switch over 20kHz generally. On the contrary, MOSFETs have no tail current but the rated currents become too small when the voltage is over 900 V. In many future applications, for example, Wireless power transmission (WPT) for Electric Vehicle (EV), more electric aircraft (MOA) and solid state transformer (SST), the converter requires high speed switching, medium/high power, low on-resistance and
2 NING et al. : A HYBRID SI IGBT AND SIC MOSFET MODULE DEVELOPMENT 361 reasonable price. In many countries, the line frequency of WPT of EV is set to 85 khz in standards, which bring a tough challenge to develop a 30 kw WPT fast charging converter. To overcome the challenges, the combination of IGBT and MOSFET devices was investigated by compensating disadvantages [7]. Among them, hybrid switches based on parallel connection between Si IGBT and were studied [8-10]. In these paper, the losses and costs of hybrid switches have been investigated and verified. In [11], to further reduce the switching loss, the switching pattern using commutation was analyzed in detail. Most of these papers focus on discrete device hybrid, which brings in large inductance in the circuit. They didn t demonstrate any larger current case (none is over 100 A). This paper evaluates the performance of a /200A hybrid phase-leg. The detailed packaging, development, gate drive circuit design, and performance comparison are presented. It gives an novel approach of hybrid switches used for over 10 kw applications. Based on datasheets, the conduction performance of hybrid is shown in Fig.2. The conduction loss of hybrid is very close to Si IGBT, while the cost is also close to Si IGBT. Current (A) Output Characteristics SiC MOS Si IGBT Hybrid Voltage(V) Conduction performance comparison II. HYBRID MODULE DEVELOPMENT The design target is a /200 A hybrid phase-leg. To evaluate the paralleling possibility of devices in hybrid, each leg includes two same rating Si IGBTs, one and one Si Diode. To reduce the parasitic parameters and prevent interference from the main power, Kelvin source pin of gates (Gates1 and Gates2) are added to both legs. The circuit of the hybrid is shown in Fig.1. Fig. 1. Hybrid circuit. Some high performance dies are chosen for this, and the properties are listed in Table III. Based on the safe operation suggestion from [11], the total current of s and Si IGBTs are selected as maximum 1:4 matching. Table III PROPERTIES OF SIC/SI DEVICES Device SiC Si IGBT Si Diode MOSFET Part number CPM IRG8CH97K10F IRD3CH82DB6 0025B Rated voltage (V) Rated current (A) 90@25 C 100@175 C 150@175 C 50@150 C Dimensions 4.04 mm 10.5 mm 6.44 mm 9.3 mm Cost 75$ 8.26$ 4.96$ 9.07 mm 9.07 mm Cost comparison Fig. 2. Conduction performance and cost comparison. The packaging design target is reliable 175 C operation and possible 200 C operation. Based on a comprehensive survey and lab evaluation, materials for each part of the power package were compared and selected. The final materials selection is listed in Table IV. Since high speed switching is required for this, power terminals and gate signal terminals are bonded to DBC with ultrasonic bonding methods to reduce parasitic parameters. Baseplate Substrate TABLE IV MATERIAL SELECTION FOR 200 ºC MODULE. Aluminum Silicon Carbide (AlSiC), 3 mm thick Aluminum nitride (AlN) direct bond copper (DBC) with 15 mils thick AlN, 8 mils thick copper Die attachment Au-Sn solder (280ºC melting point) Wirebond 6 mils aluminum wire for gate pads 15 mils aluminum wire for other pads Encapsulant Nusil R-2188 Power terminal 0.8 mm thick copper terminal Signal terminal 1 mm diameter copper pin The next step is layout design, and a genetic algorithm (GA) based layout optimization in [12] is utilized to generate a high performance design. The design space of the layout is fully searched. By considering the reduction of the parasitic parameters, minimizing the footprint, and balancing the thermal dissipation path, the decoupling gate paths, and the power paths, devices are placed and routed on the substrate. The compact layout is shown in Fig.3, and the fabricated prototype is shown in Fig.4.
3 362 CES TRANSACTIONS ON ELECTRICAL MACHINES AND SYSTEMS, VOL. 1, NO. 3, DECEMBER 2017 temperature. The value can t be directly tested. The gate drive conceptual diagram is shown in Fig.6. In this paper, Delay1 is fixed to zero, and the value of Delay 3 can be estimated by datasheets of IGBTs and MOSFETs. Delay 2 is implemented by a simple analog circuit with Schmitt inverters. The length of Delay 2 can be adjusted by C1, R1 and R2. In fact, the length is adjusted and optimized during experiments. Since the turn-off delay of IGBTs is larger than those of MOSFETs, Delay 2 should be long enough to ensure the full turn-off of IGBTs before the beginning of MOSFETs turn-off. In this paper, Delay 2 is finally set to 2 μs. Fig. 3. Hybrid layout design. Fig. 4. Hybrid prototype. III. GATE DRIVE DESIGN WITHOUT MILLER CLAMP To eliminate large switching loss in Si IGBT, is turn-on earlier than Si IGBT. Then, Si IGBT will be turn-off prior to. It is also expected to realize zero voltage switching (ZVS) for IGBT for both turn-on and turn-off phase. The gate signal pattern (delay 1 and delay2) will affect the total loss of the hybrid switch. The gate drive signal (pulse1 and pulse2) and turn on/off voltage are shown in Fig.5. Fig. 6. Gate drive conceptual diagram (without miller clamp). The performance of this gate drive is evaluated by a dual pulse test setup. The dual pulse test is a classical experiment test for power semiconductor s. Most characteristics of switches and diodes within the power s can be obtained by the dual pulse test. The test principle and diagram are illustrated in Fig.7. The test setup is shown in Fig.8. Fig. 7. Dual pulse test circuit and principle. Fig.5. Gate drive time delay. Delay 1 and Delay2 can be controlled in the circuit. Delay 3 and Delay 4 will change with DC bus voltage, current and The test waveform is shown in Fig.9. During the turn-off phase, a miller effect can be clearly found from the figure. For fast switching of, high dv/dt will bring electrical interference to Si IGBT drive path. A Miller current appears and the gate voltage of Si IGBT device (V GE) increases. This
4 NING et al. : A HYBRID SI IGBT AND SIC MOSFET MODULE DEVELOPMENT 363 voltage exceeds the threshold voltage of V GE and a fault re-turn-on happens (shown in Fig.7). Si IGBTs share part of current from, and the tail current happens again. The same phenomenons can be found from [9] and [11]. IV. GATE DRIVE DESIGN WITH MILLER CLAMP Negative off-state gate voltage is generally used to prevent the Miller effect [13]. However, in each leg of this hybrid, the and Si IGBTs shares the same ground. can only accept a -5 V negative off gate voltage. While -5 V can t fully mitigate the miller effect and tail current. At the same time, additional isolated DC source should be added to the gate drive, which increase the complexity and the total cost. Fig. 8. Double Pulse Test Setup. It means that, IGBT chips are turned on in ZVS mode, but not fully ZVS in turn off phase. Although the length of the tail current is shorter than the conventional IGBT, the power loss is much larger than that of a pure turn-off. The detailed comparison is listed in Section 3. Fig. 10. Function block diagram of ACPL-332J. In [13], commercial chips ACPL-332J with built-in turn-on/turn-off path separators were utilized. When IGBT is off, a low-impedance path is established inside the gate drive chips and the gate voltage spikes can be reduced. The function block diagram of ACPL-332J is depicted in Fig.10. During turn-off, the gate voltage is monitored and the low impedance path is activated when the gate voltage goes below 2V. For Si IGBT gate, the gate drive chip HCNW3120 is changed to A332J to overcome the miller effect. HCNW3120 is still used for gate to reduce the complexity and cost. The gate drive conceptual diagram is shown in Fig.11. (a) Turn off at 600V/ 200 A (b) Turn on at 600V/ 200 A Fig. 9. Hybrid without miller clamp. Fig. 11. Gate drive conceptual diagram (with miller clamp). The improved gate drive circuit was evaluated to compare the switching losses. The hybrid was tested up to 600
5 364 CES TRANSACTIONS ON ELECTRICAL MACHINES AND SYSTEMS, VOL. 1, NO. 3, DECEMBER 2017 V/200 A. The gate resistor of is 47Ω, and the gate resistor of Si IGBT is 15Ω. The experimental results are shown in Fig.12. It is noticed that the miller effect is mitigated within an acceptable range and the induced gate voltage of Si IGBT didn t pass the threshold voltage. Thus no obvious tail current was found in the tests. To compare the hybrid performance, a /150 A prototype was fabricated with the same package, which is shown in Fig.14. The was tested up to 600 V/ 150 A by the same dual pulse test setup. One of experimental waveform is shown in Fig.15. Turn off at 600V/ 200 A Fig A. The gate resistor was also adjusted for pure. Test results of 15 Ω set and 10 Ω set are listed in Table 5. Lower speed drive (15 Ω set) has larger power loss during turn on and turn off (close to 4 times), but smaller overshoot voltage (about 60 V). Turn on at 600V/ 200 A Fig. 12. Hybrid with miller clamp. The gate resistor was also adjusted to increase the turn on/off speed of. When gate resistor is reduced to 15Ω, a clear vibration is noticed, as shown in Fig.13. During the turn off phase, is operated 3 times larger of the rated current. It is very close to the safe operation area (SOA) boundary. A over speed gate drive may induce an unreliable switching. (a) Turn off at 600V/150A (b) Turn on at 600V/ 150 A Fig. 13. Hybrid vibrates with over speed turn-off. Fig. 15. switching.
6 NING et al. : A HYBRID SI IGBT AND SIC MOSFET MODULE DEVELOPMENT 365 Item TABLE V DOUBLE PULSE TEST RESULTS COMPARISON Hybrid without miller clamp Hybrid with miller clamp Hybrid with only IGBT operated SiC MOSFET SiC MOSFET V CC (V) I C (A) L (uh) Vge_on MOS 20 MOS 20 MOS (V) IGBT 15 IGBT 15 IGBT 15 Vge_off 0/0 0/0 0/0-5/-5-5 (V) Rg_ext MOS 5 MOS 47 IGBT (Ω) IGBT 15 IGBT 15 t rv(ns) t fi(ns) t off(ns) E off(mj) V CEpk(V) t ri(ns) t fv(ns) t on(ns) E on(mj) Table V also compares hybrid performance with and without miller clamp. To compare the performance of pure Si IGBT device, the hybrid is tested up to 600 V/200A with only IGBT switching. In this test, gate pins of SiC MOSFET (MOSg1 and MOSg2) were shorted to source pins of MOSFET (Gates1 and Gates2). Fig. 16. Time related parameter definition in Table V. The time related parameters in table 5 is defined in Fig.16. It can be learned that, with miller clamp and proper gate resistor selection, the switching loss of hybrid is close to pure, and it is much less than pure Si IGBT device. Because of the propagation delay difference and the pcb layout design, E on of hybrid with miller clamp is little larger than that of hybrid without clamp. When choosing gate drive ICs with miller clamps, small propagation delay and large supply current is preferred. In the next step, the will be evaluated by dual pulse test under 175 C and 200 C. A converter over 30 kw will be developed based on hybrid s. This converter can help to investigate the continuous performance of hybrid s. V. SUMMARY AND CONCLUSION In order to better utilize the advantages of SiC devices, this paper presents a systematic design procedure. With the details in packaging design, layout design, and gate drive design, a compact hybrid is obtained. The promising results of dual pulse tests validated the design methods and demonstrated a reasonable operation. Together with the parameter adjustment, some practical considerations in the gate drive development are presented. The hybrid combines low conduction loss of Si IGBT and low switching loss of, and the cost is closer to Si IGBT.The proved high performances of SiC/Si hybrid power will result in considerable achievement to enhance power density of a converter system. REFERENCES [1] C J. Rabkowski, D.Peftitsis, H. Nee, "Silicon Carbide power transistors: A new era in power electronics is initiated," in IEEE Industrial Electronics Magazine, Vol.6, Issue 2, pp.17-26, June [2] D. Han, J. Noppakunkajorn, B. Sarlioglu, "Comprehensive efficiency, weight, and volume comparison of SiC and Si based bidirectional DC-DC converters for hybrid electric vehicles," in IEEE Trans. on Vehicular Technology, Vol. 63, No. 7, pp , Sep [3] Y. Murakami, Y. Tajima, S. Tanimoto, "Air-Cooled Full-SiC High Power Density Inverter Unit," in Proc. IEEE EVS27, [4] [5] J. Richmond, M. Das, S. Leslie, and etc., "Roadmap for megawatt class power switch s ulilizing large area silicon carbide MOSFETs and JBS diodes," in IEEE proc. ECCE 2009, pp [6] P. Ning, L. Li and X. Wen, "Engineering Investigation on Compact Power Module for EV Application," in IEEE proc. IECON 2017, pp.1-7. [7] K. Hoffmann, J. Karst, "High frequency power switch improved performance by MOSFETs and IGBTs connected in parallel," in IEEE proc. EPE 2005, pp.11. [8] A. Deshpande, F. Luo, "Design of a silicon-wbg hybrid switch," IEEE WiPDA 2015, pp [9] J. He, R. Katebi, N. Weise, A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch Based Power Converters, in IEEE Trans. on Industrial Electronics,Vol. PP, Issue. 99, pp, 1-1, [10] D. Aggeler, F. Canales, J. Biela, and etc., Dv/Dt -Control Methods for the SiC JFET/Si MOSFET Cascode, in IEEE Trans. on Power Electronics, Vol. 28, Issue. 8, pp [11] S. Ueno, N. Kimura, T. Morizane and etc., "Study on Characteristics of Hybrid Switch using Si IGBT and depending on External Parameters," in IEEE proc. EPE2017, pp [12] P.Ning, and Xuhui Wen, "A Fast Universal Power Module Layout Method", in IEEE proc. ECCE2015, pp [13] P. Ning, F. Wang, and D. Zhang, "A High Density 250 C Junction Temperature SiC Power Module Development," in IEEE Journal of Emerging & Selected Topics in Power Electronics, pp , Puqi Ning received his Ph.D. degree from electrical engineering of Virginia Tech, Blacksburg, US in He is full professor in Institute of Electrical Engineering, Chinese Academy of Sciences. Dr. Ning has been involved in high temperature packaging and high density converter design for more than 10 years.
7 366 CES TRANSACTIONS ON ELECTRICAL MACHINES AND SYSTEMS, VOL. 1, NO. 3, DECEMBER 2017 Lei Li is a Ph.D. student in Institute of Electrical Engineering, Chinese Academy of Sciences. He has been involved in power device modeling and high density converter design for 3 years. Xuhui Wen received her B.S, M.S and PhD degree in electrical engineering from Tsinghua University in 1984, 1989, 1993 respectively. She is full professor in Institute of Electrical Engineering, Chinese Academy of Sciences. Dr. Wen has been involved in high power density electrical drive and generation especially for electric vehicle application for more than 20 years. Han Cao is a Master student in Institute of Electrical Engineering, Chinese Academy of Sciences. He has been working on power device modeling and high density converter design for 1 year.
All-SiC Module for Mega-Solar Power Conditioner
All-SiC Module for Mega-Solar Power Conditioner NASHIDA, Norihiro * NAKAMURA, Hideyo * IWAMOTO, Susumu A B S T R A C T An all-sic module for mega-solar power conditioners has been developed. The structure
More informationNewly Developed High Power 2-in-1 IGBT Module
Newly Developed High Power 2-in-1 IGBT Module Takuya Yamamoto Shinichi Yoshiwatari ABSTRACT Aiming for applications to new energy sectors, such as wind power and solar power generation, which are continuing
More informationEnhanced Breakdown Voltage for All-SiC Modules
Enhanced Breakdown Voltage for All-SiC Modules HINATA, Yuichiro * TANIGUCHI, Katsumi * HORI, Motohito * A B S T R A C T In recent years, SiC devices have been widespread mainly in fields that require a
More informationInverter Market Trends and Major Technology Changes
Inverter Market Trends 2013-2020 and Major Technology Changes February 2013 A big dive into the heart of the power electronics industry, from systems to active & passive components REPORT SAMPLE Delphi
More informationLecture 2. Power semiconductor devices (Power switches)
Lecture 2. Power semiconductor devices (Power switches) Power semiconductor switches are the work-horses of power electronics (PE). There are several power semiconductors devices currently involved in
More informationDevices and their Packaging Technology
4 th Workshop Future of Electronic Power Processing and Conversion Devices and their Packaging Technology May 2001 Werner Tursky SEMIKRON ELEKTRONIK GmbH Nuremberg, Germany 1 1. Devices 2. From Discrete
More informationSpeed Enhancement for the 3rd-Generation Direct Liquid Cooling Power Modules for Automotive Applications with RC-IGBT
Speed Enhancement for the 3rd-Generation Direct Liquid Cooling ower Modules for Automotive Applications with KOGE, Takuma * IOUE, Daisuke * ADACHI, Shinichiro * A B S T R A C T Fuji Electric has employed
More informationIntroduction of large DIPIPMP conditioner inverter. application on EV bus air. Abstract: 1. Introduction
chip,, generation ) Ver. Introduction of large DIIM conditioner inverter application on EV bus air Yinghua Ma, Qingdao Longertek Co., Ltd, Qingdao, China, myhsir@163.com Xiaoling Wang, Semiconductor division,
More informationA 10kW 3 level UPS Inverter utilizing a full SiC module solution to achieve high efficiency and reduce size and weight
A 10kW 3 level UPS Inverter utilizing a full SiC module solution to achieve high efficiency and reduce size and weight Author: Christopher Rocneanu, BDM Power, ROHM Semiconductor Author: Andreas Hensel,
More informationProviding Energy Management of a Fuel Cell-Battery Hybrid Electric Vehicle Fatma Keskin Arabul, Ibrahim Senol, Ahmet Yigit Arabul, Ali Rifat Boynuegri
Vol:9, No:8, Providing Energy Management of a Fuel CellBattery Hybrid Electric Vehicle Fatma Keskin Arabul, Ibrahim Senol, Ahmet Yigit Arabul, Ali Rifat Boynuegri International Science Index, Energy and
More informationA Novel DC-DC Converter Based Integration of Renewable Energy Sources for Residential Micro Grid Applications
A Novel DC-DC Converter Based Integration of Renewable Energy Sources for Residential Micro Grid Applications Madasamy P 1, Ramadas K 2 Assistant Professor, Department of Electrical and Electronics Engineering,
More informationAdvanced Soft Switching for High Temperature Inverters
Advanced Soft Switching for High Temperature Inverters Plenary Presentation at The 5th IEEE Vehicle Power and Propulsion Conference (VPPC'9) Jih-Sheng (Jason) Lai, Professor Virginia Polytechnic Institute
More informationIGBT Modules for Electric Hybrid Vehicles
IGBT Modules for Electric Hybrid Vehicles Akira Nishiura Shin Soyano Akira Morozumi 1. Introduction Due to society s increasing requests for measures to curb global warming, and benefiting from the skyrocketing
More informationA novel synthetic test system for thyristor level in the converter valve of HVDC power transmission
A novel synthetic test system for thyristor level in the converter valve of HVDC power transmission Longchen Liu 1, Ke Yue 2, Lei Pang 2, Xinghai Zhang 1, Yawei Li 1 and Qiaogen Zhang 2 1 State Grid Sichuan
More informationNext-Generation Power Electronics Technology with Vehicle Electrification
Next-Generation Power Electronics Technology with Vehicle Electrification Kevin (Hua) Bai, Ph.D Associate Professor Robert Bosch Endowed Professorship Department of Electrical and Computer Engineering
More informationAutomotive Power Electronics Roadmap
Automotive Power Electronics Roadmap J. W. Kolar, ETH Zurich, Switzerland, M. März, Fraunhofer IISB, Germany, and E. Wolfgang, Germany Summary authored by S. D. Round, ETH Zurich, Switzerland Automotive
More informationNEXT-GENERATION POWER SEMICONDUCTORS: MARKETS MATERIALS, TECHNOLOGIES
NEXT-GENERATION POWER SEMICONDUCTORS: MARKETS MATERIALS, TECHNOLOGIES The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to pass the $1 billion mark
More informationDesign of Three Input Buck-Boost DC-DC Converter with Constant input voltage and Variable duty ratio using MATLAB/Simulink
Design of Three Input Buck-Boost DC-DC Converter with Constant input voltage and Variable duty ratio using MATLAB/Simulink A.Thiyagarajan, B.Gokulavasan Abstract Nowadays DC-DC converter is mostly used
More informationOptimized IGBT technology for mild hybrid vehicles
EVS27 Barcelona, Spain, November 17-20, 2013 Optimized IGBT technology for mild hybrid vehicles Dr. Carlos Castro 1, Laurent Beaurenaut 1 1 Infineon Technologies AG, Am Campeon 1-12, D-85579, Neubiberg,
More informationEXPERIMENTAL VERIFICATION OF INDUCED VOLTAGE SELF- EXCITATION OF A SWITCHED RELUCTANCE GENERATOR
EXPERIMENTAL VERIFICATION OF INDUCED VOLTAGE SELF- EXCITATION OF A SWITCHED RELUCTANCE GENERATOR Velimir Nedic Thomas A. Lipo Wisconsin Power Electronic Research Center University of Wisconsin Madison
More informationMaximizing the Power Efficiency of Integrated High-Voltage Generators
Maximizing the Power Efficiency of Integrated High-Voltage Generators Jan Doutreloigne Abstract This paper describes how the power efficiency of fully integrated Dickson charge pumps in high- IC technologies
More informationSiC Hybrid Module Application Note Chapter 1 Concept and Features
SiC Hybrid Module Application Note Chapter 1 Concept and Features Table of Contents Page 1 Basic concept 2 2 Features 3 3 Switching time definition 7 Introduction The improved characteristic of SiC devices
More informationSimulation Analysis of Closed Loop Dual Inductor Current-Fed Push-Pull Converter by using Soft Switching
Journal for Research Volume 02 Issue 04 June 2016 ISSN: 2395-7549 Simulation Analysis of Closed Loop Dual Inductor Current-Fed Push-Pull Converter by using Soft Switching Ms. Manasa M P PG Scholar Department
More informationExpanded Lineup of High-Power 6th Generation IGBT Module Families
Expanded Lineup of High-Power 6th Generation IGBT Module Families Takuya Yamamoto Shinichi Yoshiwatari Hiroaki Ichikawa ABSTRACT To respond to growing demand in the renewable energy sector, including wind
More informationRealization of a New Concept for Power Chip Embedding
As originally published in the SMTA Proceedings Realization of a New Concept for Power Chip Embedding H. Stahr 1, M. Morianz 1, I. Salkovic 1 1: AT&S AG, Leoben, Austria Abstract: Embedded components technology
More informationElectric cars: Technology
In his lecture, Professor Pavol Bauer explains all about how power is converted between the various power sources and power consumers in an electric vehicle. This is done using power electronic converters.
More informationIsolated Bidirectional DC DC Converter for SuperCapacitor Applications
European Association for the Development of Renewable Energies, Environment and Power Quality (EA4EPQ) International Conference on Renewable Energies and Power Quality (ICREPQ 11) Las Palmas de Gran Canaria
More informationDevelopment and Analysis of Bidirectional Converter for Electric Vehicle Application
Development and Analysis of Bidirectional Converter for Electric Vehicle Application N.Vadivel, A.Manikandan, G.Premkumar ME (Power Electronics and Drives) Department of Electrical and Electronics Engineering
More informationCHOOSING THE RIGHT POWER MODULE FOR INVERTER DESIGNS. By Mark Steinmetz, Field Applications Engineer Vincotech GmbH
CHOOSING THE RIGHT POWER MODULE FOR INVERTER DESIGNS By Mark Steinmetz, Field Applications Engineer Vincotech GmbH As Solar and UPS companies start to discuss the next generation inverter products, many
More informationFuji Electric Power Semiconductors
Fuji Electric Power Semiconductors Device Application Technology Dept. Semiconductors Division-Sales Group Fuji Electric. Co., Ltd. July 2018 Fuji Electric Co., Ltd. All rights reserved. 1 Fuji Electric
More informationDesigning with SiC & GaN devices with Emphasis on EMC & Safety considerations
Designing with SiC & GaN devices with Emphasis on EMC & Safety considerations Dr. Supratim Basu, Prof. Tore Undeland & Prof. Jorma Kyyrä Seminar Presentation Time: Full day Seminar Presentation Abstract:
More informationBidirectional Intelligent Semiconductor Transformer
Journal of Engineering and Fundamentals Vol. 2(2), pp. 9-16, December, 2015 Available online at http://www.tjef.net ISSN: 2149-0325 http://dx.doi.org/10.17530/jef.15.08.2.2 Article history Received: 24.05.2015
More informationSoft Switching of Two Quadrant Forward Boost and Reverse Buck DC- DC Converters Sarath Chandran P C 1
IJSRD - International Journal for Scientific Research & Development Vol. 3, Issue 02, 2015 ISSN (online): 2321-0613 Soft Switching of Two Quadrant Forward Boost and Reverse Buck DC- DC Converters Sarath
More informationHIGH VOLTAGE, HIGH CURRENT, HIGH DI/DT SOLID STATE SWITCH
HIGH VOLTAGE, HIGH CURRENT, HIGH DI/DT SOLID STATE SWITCH Steven C. Glidden Applied Pulsed Power, Inc. Box 1020, 207 Langmuir Lab, 95 Brown Road, Ithaca, New York, 14850-1257 tel: 607.257.1971, fax: 607.257.5304,
More informationPower & Industrial Systems Group, Hitachi Europe Ltd., Maidenhead, Berkshire, UK
3.3kV High Speed IGBT Module For Bi-directional and Medium Frequency Application Masashi Shinagawa 1, Takashi Waga 2, Yoshiaki Toyota 3, Yasushi Toyoda 2, Katsuaki Saito 2 1 Power & Industrial Systems
More information5 kw Multilevel DC-DC Converter for Hybrid Electric and Fuel Cell Automotive Applications
1 5 kw Multilevel DC-DC Converter for Hybrid Electric and Fuel Cell Automotive Applications Faisal H. Khan 1,2 Leon M. Tolbert 2 fkhan3@utk.edu tolbert@utk.edu 2 Electric Power Research Institute (EPRI)
More informationRotor Position Detection of CPPM Belt Starter Generator with Trapezoidal Back EMF using Six Hall Sensors
Journal of Magnetics 21(2), 173-178 (2016) ISSN (Print) 1226-1750 ISSN (Online) 2233-6656 http://dx.doi.org/10.4283/jmag.2016.21.2.173 Rotor Position Detection of CPPM Belt Starter Generator with Trapezoidal
More informationSilicon Carbide (SiC)
Silicon Carbide (SiC) High junction temperature Hans Bängtsson 2013-05-08 Properties of Silicon Carbide Important properties of SiC in traction applications High junction temperature Low losses, especially
More informationNext-generation Inverter Technology for Environmentally Conscious Vehicles
Hitachi Review Vol. 61 (2012), No. 6 254 Next-generation Inverter Technology for Environmentally Conscious Vehicles Kinya Nakatsu Hideyo Suzuki Atsuo Nishihara Koji Sasaki OVERVIEW: Realizing a sustainable
More informationPower through Innovation. UK and China Joint R&D & Wide Band Gap Semiconductors: UK operating in global market. Yangang Wang
Power through Innovation UK and China Joint R&D & Wide Band Gap Semiconductors: UK operating in global market Yangang Wang Company Profile CRRC is a world leading rail transportation equipment manufacturer
More informationDEVELOPMENT OF COMPACT VARIABLE- VOLTAGE, BI-DIRECTIONAL 100KW DC-DC CONVERTER
DEVELOPMENT OF COMPACT VARIABLE- VOLTAGE, BI-DIRECTIONAL KW DC-DC CONVERTER Leonid Fursin, Maurice Weiner, Jason Lai 2, Wensong Yu 2, Junhong Zhang 2, Hao Qian 2, Kuang Sheng 3, Jian H. Zhao 3, Terence
More informationPASSIVE SOFT SWITCHING SNUBBER FOR SPWM INVERTERS
International Journal of Advances in Applied Science and Engineering (IJAEAS) ISSN (P): 2348-1811; ISSN (E): 2348-182X Vol-1, Iss.-4, SEPTEMBER 2014, 36-41 IIST PASSIVE SOFT SWITCHING SNUBBER FOR SPWM
More informationEV/HEV Automotive Power Modules: Innovations and trends
EV/HEV Automotive Power Modules: Innovations and trends Elena Barbarini, Phd IMAPS 2018, 8th November 22 Bd Benoni Goullin 44200 NANTES - FRANCE +33 2 40 18 09 16 info@systemplus.fr www.systemplus.fr 2018
More informationFast thyristors. When burning for induction heating solutions.
Fast thyristors. When burning for induction heating solutions. By Ladislav Radvan, ABB s.r.o., Semiconductors. Published by Power Electronics Europe (August 2014) Induction heating is one of the key metal
More informationPOWER TRANSMISSION OF LOW FREQUENCY WIND FIRMS
Available Online at www.ijcsmc.com International Journal of Computer Science and Mobile Computing A Monthly Journal of Computer Science and Information Technology IJCSMC, Vol. 3, Issue. 10, October 2014,
More informationMaximizing the Potential of WBG Devices for EV Battery Chargers
Maximizing the Potential of WBG Devices for EV Battery Chargers Hua Kevin Bai Presentation for Knoxville, TN August 24 th, 2018 Battery Chargers- Si Version 11kW charger (grid side, 2011) (2010) 2/29 11kW
More informationBasic Concepts and Features of X-series
Chapter 1 Basic Concepts and Features of X-series 1. Basic Concept of X-series 1-2 2. Chip Features of X-series 1-3 3. Package Technology Characteristics of X-series 1-7 4. Expansion of Current Rating
More informationShaft Grounding Rings. Protecting VFD Driven Motors from Bearing Currents
Shaft Grounding Rings Protecting VFD Driven Motors from Bearing Currents Variable Frequency Drives and Electric Induction Motors When pulse width modulation (PWM) Variable Frequency Drives (VFDs) were
More informationCircuits for Protecting and Triggering SCRs in High Power Converters
168 1 Circuits for Protecting and Triggering SCRs in High Power Converters Angelo L. GATTOZZI and John A. PAPPAS Abstract-- The performance of high-power converters employing SCRs operating at several
More informationSilicon Carbide Semiconductor Products
Power Matters Silicon Carbide Semiconductor Products Low Switching Losses Low Gate Resistance High Power Density High Thermal Conductivity High Avalanche (UIS) Rating Reduced Heat Sink Requirements High
More information3rd-Generation Direct Liquid Cooling Power Module for Automotive Applications
3rd-Generation Direct Liquid Cooling Power Module for Automotive Applications ARAI, Hirohisa HIGUCHI, Keiichi KOYAMA, Takahiro ABSTRACT Fuji Electric has developed a 3rd-generation direct liquid cooling
More informationPerformance Analysis of Bidirectional DC-DC Converter for Electric Vehicle Application
IJIRST International Journal for Innovative Research in Science & Technology Volume 1 Issue 9 February 2015 ISSN (online): 2349-6010 Performance Analysis of Bidirectional DC-DC Converter for Electric Vehicle
More informationAdaptive Power Flow Method for Distribution Systems With Dispersed Generation
822 IEEE TRANSACTIONS ON POWER DELIVERY, VOL. 17, NO. 3, JULY 2002 Adaptive Power Flow Method for Distribution Systems With Dispersed Generation Y. Zhu and K. Tomsovic Abstract Recently, there has been
More informationPower Electronics Roadmap. Updated by the Advanced Propulsion Centre in collaboration with and on behalf of the Automotive Council
Power Electronics Roadmap Updated by the Advanced Propulsion Centre in collaboration with and on behalf of the Automotive Council Executive summary: Power electronics The 2013 roadmap was developed alongside
More informationCapacity Design of Supercapacitor Battery Hybrid Energy Storage System with Repetitive Charging via Wireless Power Transfer
Capacity Design of Supercapacitor Battery Hybrid Energy Storage System with Repetitive Charging via Wireless Power Transfer Toshiyuki Hiramatsu Department of Electric Engineering The University of Tokyo
More informationRich, unique history of engineering, manufacturing and distributing
Rich, unique history of engineering, manufacturing and distributing United Silicon Carbide, inc. is a semiconductor company specializing in the development of high efficiency Silicon Carbide (SiC) devices
More informationHigh Speed V-Series of Fast Discrete IGBTs
High Speed V-Series of Fast Discrete IGBTs Taketo Watashima Ryu Araki ABSTRACT Fuji Electric has developed and commercialized the High Speed V-Series of discrete IGBTs (insulated gate bipolar transistors)
More informationMulti-Port DC-DC Converter for Grid Integration of Photo Voltaic Systems through Storage Systems with High Step-Up Ratio
Multi-Port DC-DC Converter for Grid Integration of Photo Voltaic Systems through Storage Systems with High Step-Up Ratio CH.Rekha M.Tech (Energy Systems), Dept of EEE, M.Vinod Kumar Assistant Professor,
More informationECPE 24/11/2011 : Power Electronics Research in Europe
Regis Meuret SAFRAN Hispano-Suiza ECPE 24/11/2011 : Power Electronics Research in Europe ECPE 24/11/2011 1 AGENDA INTRODUCTION: CREAM context POWER ELECTRONIC OBJECTIVES IN CREAM CREAM IN THE HT SAFRAN
More informationICEC The 27 th International Conference on Electrical Contacts. presented by Peter Meckler
Authors: Peter Meckler, E-T-A Elektrotechnische Apparate GmbH, Altdorf, Germany Frank Gerdinand, E-T-A Elektrotechnische Apparate GmbH, Altdorf, Germany Roland Weiss, Siemens AG, Erlangen, Germany Ulrich
More information690-V Inverters Equipped with SiC Hybrid Module FRENIC-VG Stack Series
690-V Inverters Equipped with SiC Hybrid Module FRENIC-VG Stack Series SATO, Kazuhisa TAKANO, Makoto NOMURA, Kazuki ABSTRACT Fuji Electric offers 690-V stack type of the FRENIC-VG Series that has the highest-level
More informationOverview of Power Electronics for Hybrid Vehicles
Overview of Power Electronics for Hybrid Vehicles P. T. Krein Grainger Center for Electric Machinery and Electromechanics Department of Electrical and Computer Engineering University of Illinois at Urbana-Champaign
More informationIGBT5 and. The new Chip Generation and its innovative Interconnection Technology. PCIM 2014, Nuremberg
IGBT5 and The new Chip Generation and its innovative Interconnection Technology, Nuremberg IGBT5 and.xt Technology offers Key Features Useable operation temperature up to Tvjop=175 C Optimized switching
More informationImplementation of low inductive strip line concept for symmetric switching in a new high power module
Implementation of low inductive strip line concept for symmetric switching in a new high power module Georg Borghoff, Infineon Technologies AG, Germany Abstract The low inductive strip line concept offers
More informationResearch Paper MULTIPLE INPUT BIDIRECTIONAL DC-DC CONVERTER Gomathi.S 1, Ragavendiran T.A. S 2
Research Paper MULTIPLE INPUT BIDIRECTIONAL DC-DC CONVERTER Gomathi.S 1, Ragavendiran T.A. S 2 Address for Correspondence M.E.,(Ph.D).,Assistant Professor, St. Joseph s institute of Technology, Chennai
More informationINTERNATIONAL JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY (IJEET)
INTERNATIONAL JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY (IJEET) Proceedings of the 2 nd International Conference on Current Trends in Engineering and Management ICCTEM -2014 ISSN 0976 6545(Print)
More informationDevelopment of Emergency Train Travel Function Provided by Stationary Energy Storage System
150 Hitachi Review Vol. 66 (2017), No. 2 Featured Articles III Development of Emergency Train Travel Function Provided by Stationary Energy System Yasunori Kume Hironori Kawatsu Takahiro Shimizu OVERVIEW:
More informationIJSRD - International Journal for Scientific Research & Development Vol. 4, Issue 02, 2016 ISSN (online):
IJSRD - International Journal for Scientific Research & Development Vol. 4, Issue 02, 2016 ISSN (online): 2321-0613 Bidirectional Double Buck Boost Dc- Dc Converter Malatesha C Chokkanagoudra 1 Sagar B
More informationChina. Fig. 1 Chain SVG Electrical Diagram
Applied Mechanics and Materials Submitted: 2014-07-20 ISSN: 1662-7482, Vols. 644-650, pp 3861-3865 Accepted: 2014-07-22 doi:10.4028/www.scientific.net/amm.644-650.3861 Online: 2014-09-22 2014 Trans Tech
More informationCooliR 2 - New Power Module Platform for HEV and EV Traction Inverters.
CooliR 2 - New Power Module Platform for HEV and EV Traction Inverters. Jack Marcinkowski Abstract The paper introduces an innovative CooliR 2 high power semiconductor packaging platform from International
More informationOptimal Design Methodology for LLC Resonant Converter in Battery Charging Applications Based on Time-Weighted Average Efficiency
LeMeniz Infotech Page number 1 Optimal Design Methodology for LLC Resonant Converter in Battery Charging Applications Based on Time-Weighted Average Efficiency Abstract The problems of storage capacity
More informationEffect of driving pattern parameters on fuel-economy for conventional and hybrid electric city buses
EVS28 KINTEX, Korea, May 3-6, 2015 Effect of driving pattern parameters on fuel-economy for conventional and hybrid electric city buses Ming CHI 1, Hewu WANG 1, Minggao OUYANG 1 1 Author 1 State Key Laboratory
More informationPhilosophy of Topology and Component Selection for Cost and Performance in Automotive Converters.
Philosophy of Topology and Component Selection for Cost and Performance in Automotive Converters. Alexander Isurin and Alexander Cook ISO 9001:2000 / TS-16949:2002 Registered Company 1 Introduction Engineering
More informationDesign and Simulation of Grid Connected PV System
Design and Simulation of Grid Connected PV System Vipul C.Rajyaguru Asst. Prof. I.C. Department, Govt. Engg. College Rajkot, Gujarat, India Abstract: In this paper, a MATLAB based simulation of Grid connected
More informationDual power flow Interface for EV, HEV, and PHEV Applications
International Journal of Engineering Inventions e-issn: 2278-7461, p-issn: 2319-6491 Volume 4, Issue 4 [Sep. 2014] PP: 20-24 Dual power flow Interface for EV, HEV, and PHEV Applications J Ranga 1 Madhavilatha
More informationINDUCTION motors are widely used in various industries
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 44, NO. 6, DECEMBER 1997 809 Minimum-Time Minimum-Loss Speed Control of Induction Motors Under Field-Oriented Control Jae Ho Chang and Byung Kook Kim,
More informationPower Semiconductor Switches
Power Semiconductor Switches Pekik Argo Dahono Power Semiconductor Switches Diodes (Uncontrolled switches) Thyristors (Controllable at turn-on but uncontrolled at turn-off or commonly called as latched
More information1-1. Basic Concept and Features
Chapter 1 Basic Concept and Features 1. 2. 3. 4. 5. 6. Basic Concept of the Automotive Module Direct Liquid-cooling Structure 1-3 Feature of X-series Chips On-chip Sensors Application of High-strength
More informationDesign of Four Input Buck-Boost DC-DC Converter for Renewable Energy Application
Design of Four Input Buck-Boost DC-DC Converter for Renewable Energy Application A.Thiyagarajan Assistant Professor, Department of Electrical and Electronics Engineering Karpagam Institute of Technology
More informationEPE 18 ECCE Europe: LIST OF KEYWORDS
EPE 18 ECCE Europe: LIST OF KEYWORDS AC machine AC-cable AC/AC converter Accelerators Acoustic noise Active damping Active filter Active Front-End Actuator Adaptive control Adjustable speed drive Adjustable
More informationExperimental Performance Evaluation of IPM Motor for Electric Vehicle System
IOSR Journal of Engineering (IOSRJEN) e-issn: 2250-3021, p-issn: 2278-8719 Vol. 3, Issue 1 (Jan. 2013), V3 PP 19-24 Experimental Performance Evaluation of IPM Motor for Electric Vehicle System Jin-Hong
More informationEvaluation of Temperature for an Electronic Enclosure
Evaluation of Temperature for an Electronic Enclosure [1] Ajay Kumar [2] Mrs. Manjula S [1] M.Tech Student, [2] Assistant Professor Computational analysis in Mechanical Science Department Government Engineering
More informationIsolated Bidirectional DC DC Converter for SuperCapacitor Applications
Downloaded from orbit.dtu.dk on: Oct 15, 2018 Isolated Bidirectional DC DC Converter for SuperCapacitor Applications Dehnavi, Sayed M. D.; Sen, Gokhan; Thomsen, Ole Cornelius; Andersen, Michael A. E.;
More informationDual-Rail Domino Logic Circuits with PVT Variations in VDSM Technology
Dual-Rail Domino Logic Circuits with PVT Variations in VDSM Technology C. H. Balaji 1, E. V. Kishore 2, A. Ramakrishna 3 1 Student, Electronics and Communication Engineering, K L University, Vijayawada,
More informationComparison of Standard and Fast Charging Methods for Electric Vehicles
Comparison of Standard and Fast Charging Methods for Electric Vehicles Petr CHLEBIS, Martin TVRDON, Ales HAVEL, Katerina BARESOVA Department of Electronics, Faculty of Electrical Engineering and Computer
More informationBenefits of SiC MOSFET technology in powertrain inverter of a Formula E racing car
Benefits of SiC MOSFET technology in powertrain inverter of a Formula E racing car Dr.-Ing. Felipe Filsecker Application Engineer ROHM Semiconductor GmbH ROHM SiC device development 18 years of experience
More informationThe Application of UKF Algorithm for type Lithium Battery SOH Estimation
Applied Mechanics and Materials Online: 2014-02-06 ISSN: 1662-7482, Vols. 519-520, pp 1079-1084 doi:10.4028/www.scientific.net/amm.519-520.1079 2014 Trans Tech Publications, Switzerland The Application
More informationTransient analysis of a new outer-rotor permanent-magnet brushless DC drive using circuit-field-torque coupled timestepping finite-element method
Title Transient analysis of a new outer-rotor permanent-magnet brushless DC drive using circuit-field-torque coupled timestepping finite-element method Author(s) Wang, Y; Chau, KT; Chan, CC; Jiang, JZ
More informationVEHICLE ELECTRICAL SYSTEMS INTEGRATION (VESI) PROJECT
EP/I038543/1 VEHICLE ELECTRICAL SYSTEMS INTEGRATION (VESI) PROJECT Phil Mawby University of Warwick 2 Facts & Figures EPSRC-funded project: 3.8 M Low TRL (1-3) to support EV technology development 10 partners
More informationDesign of Integrated Power Module for Electric Scooter
EVS27 Barcelona, Spain, November 17-20, 2013 Design of Integrated Power Module for Electric Scooter Shin-Hung Chang 1, Jian-Feng Tsai, Bo-Tseng Sung, Chun-Chen Lin 1 Mechanical and Systems Research Laboratories,
More informationFuzzy logic controlled Bi-directional DC-DC Converter for Electric Vehicle Applications
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE) e-issn: 2278-1676,p-ISSN: 2320-3331, Volume 12, Issue 3 Ver. IV (May June 2017), PP 51-55 www.iosrjournals.org Fuzzy logic controlled
More informationFrom Discrete IGBT Modules to Power Stacks
From Discrete IGBT Modules to Power Stacks APEC 2015 March 19 th 2015 Charlotte, NC SEMIKRON Inc. G. Genet P. Drexhage K. Haddad Slide - 1 - What is a power stack? 1. Heatsink 2. Thermal Interface Material
More informationAnalysis and Design of Improved Isolated Bidirectional Fullbridge DC-DC Converter for Hybrid Electric Vehicle
Analysis and Design of Improved Isolated Bidirectional Fullbridge DC-DC Converter for Hybrid Electric Vehicle Divya K. Nair 1 Asst. Professor, Dept. of EEE, Mar Athanasius College Of Engineering, Kothamangalam,
More information1. Troubleshooting 4-2 MT5F Fuji Electric Co., Ltd. All rights reserved.
Chapter 4 Troubleshooting 1. Troubleshooting 4-2 MT5F33743 Fuji Electric Co., Ltd. All rights reserved. 4-1 This chapter describes how to deal with troubles that may occur while the automotive IGBT module
More informationFuzzy Logic Control Based MIMO DC-DC Boost Converter for Electric Vehicle Application Ans Jose 1 Absal Nabi 2 Jubin Eldho Paul 3
IJSRD - International Journal for Scientific Research & Development Vol. 3, Issue 10, 2015 ISSN (online): 2321-0613 Fuzzy Logic Control Based MIMO DC-DC Boost Converter for Electric Vehicle Application
More informationE-DRIVE: HIGHLY INTEGRATED AND HIGH EFFICIENT
E-DRIVE: HIGHLY INTEGRATED AND HIGH EFFICIENT Korea EV Engineering & Testing Exhibition Roger Perthen AVL List GmbH (Headquarters) KEY ASPECTS FOR BATTERY ELECTRIC VEHICLES (BEVs) E-DRIVE: AFFORDABLE -
More informationMaking Silicon Carbide Schottky Diodes and MOSFETs Mainstream Demands New Approaches to Wafer Fabrication and Converter Design
Making Silicon Carbide Schottky Diodes and MOSFETs Mainstream Demands New Approaches to Wafer Fabrication and Converter Design by Corey Deyalsingh, Littelfuse and Sujit Banerjee, Monolith Semiconductor
More informationElectric Drive Technologies Roadmap Update
Electric Drive Technologies Roadmap Update Burak Ozpineci Greg Smith Oak Ridge National Laboratory burak@ornl.gov @burakozpineci ORNL is managed by UT-Battelle for the US Department of Energy Oak Ridge
More informationLOSSES COMPARISON FOR INVERTERS WITH Si AND SiC DEVICES FROM PUMPED STORAGE SYSTEMS
Bulletin of the ransilvania University of Braşov Vol. 8 (57) No. 2-2015 Series I: Engineering Sciences LOSSES COMPARISON FOR INVERERS WIH Si AND SiC DEVICES FROM PUMPED SORAGE SYSEMS A. BUSCA-FORCOS 1
More informationII. ANALYSIS OF DIFFERENT TOPOLOGIES
An Overview of Boost Converter Topologies With Passive Snubber Sruthi P K 1, Dhanya Rajan 2, Pranav M S 3 1,2,3 Department of EEE, Calicut University Abstract This paper does the analysis of different
More information