Sten Hellstrom ESD - The Scourge of Electronics

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1 Sten Hellstrom ESD - The Scourge of Electronics

2 Springer Berlin Heidelberg New York Barcelona Budapest Hong Kong London Milan Paris Santa Clara Singapore Tokyo

3 Sten Hellstrom ESD - The Scourge of Electronics With 174 Figures and 7 Tables Springer

4 Dr. Sten Hellstrom RELECTRONIC-ESD-HB Laxvagen Lidingo Sweden Catalogmg-in-Publication Data applied for Die Deutsche Bibliothek - CIP-Einheitsaufnahme Hellstrom, Sten: ESD - The scourge of electronics / Sten Hellstrom.- Berlin; Heidelberg; New York; Barcelona; Budapest; Hongkong ; London; Mailand ; Paris; Santa Clara; Singapur ; Tokio: Springer, 1998 ISBN-13: e-isbn-13: DOl: / This work is subject to copyright. All rights are reserved, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilm or in other ways, and storage in data banks. Duplication of this publication or parts thereof is permitted only under the provisions of the German Copyright Law of September 9, 1965, in its current version, and permission for use must always be obtained from Springer-Verlag. Violations are liable for prosecution act under German Copyright Law. Springer-Verlag Berlin Heidelberg 1998 Softcover repint of the hardcover 1St edition 1998 The use of general descriptive names, registered names, trademarks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. Coverdesign: Struve & Partner, Heidelberg Typesetting: Camera-Ready by author 62/ Printed on acid-free paper

5 List of contents LIST OF CONTENTS... V PREFACE... Vll BACKGROUND... Vll ELECTRONICS AND ELECTRICAL DISCHARGES GENERATED BY PLASTICS... VIII ACKNOWLEDGEMENTS... VIII 1 THE DISCOVERY OF STATIC ELECTRICITY AND ITS MANIFESTATION TRIBOELECTRICITY THE INDUCED ELECTRICITY ("INFLUENCE") CHARGE, POTENTIAL AND FIELD RELATION TO ELECTRONICS CHARGING DIRECT ELECTRIC DISCHARGES SELF-CHARGING CHARGING BY INDUCTION (INFLUENCE) ROLLING GATES AS ESD GENERA TORS RELATION BETWEEN CHARGING - DISCHARGING PROCESSES AND ESD- SIMULATION MODELS ESD-TESTING AND MODELS GENERAL ESD-SIMULATION MODELS COMPARISON BETWEEN DIFFERENT MODELS AND THE COMPONENTS' RESPONSES TO THEM SUSCEPTIBILITYFORESD FUTURE IMPLICATIONS OF ESD EXAMPLE OF DETERMINATION OF SUSCEPTIBILITY LEVEL FAILURE ANALYSIS GENERAL FAILURE MANIFESTATION FAILURE MODE TECHNICAL FAILURE ANALYSIS WORKS CAUSE OF FAILURE AND FAILURE MECHANISMS LATENT FAILURES TIME DEPENDENCE AND EVENT DEPENDENCE TECHNOLOGY DEPENDENCE III-V-COMPONENTS POL YSILICON RESISTORS DETECTION OF LATENT FAILURES... 86

6 VI List of contents 6.6 CONSEQUENCES AND COUNTERACTIONS INDIRECTESD E- ANDH-FIELD EXAMPLES OF PERTURBATION TESTING METHODS AND NORMS OTHER TYPES OF PERTURBATIONS IN ELECTRONICS NOISE PERTURBATION FROM TRANSIENTS EMC THE IMPACT OF ELECTRIC FIELDS AND ELECTROMAGNETIC WAVES ON THE ORGANISM COMPUTER SCREENS, TV-SETS ETC ELECTROMAGNETIC RADIATION FIELDS SIMULATION METHODS MATHEMATICAL APPROACH SIMULATION OF TRANSIENTS ACROSS AN PN-JUNCTION D AND 3D SIMULATIONS PROTECTION METHODS - ANTISTATIC MATERIALS GENERAL PROTECTION CIRCUITS IN COMPONENTS DESIGN RULES AGAINST THE IMPACT OF ESD ANTISTATIC MATERIALS EVALUATION METHODS FOR ANTISTATIC MATERIALS THE LOCALISATION OF CHARGES PROTECTION PROGRAM NORMS AND STANDARD LABELS FOR MARKING FAILURE FREQUENCY AND COSTS FOR ESD FAlLUREOCCURRANCE COST OF ESD-FAILURES INDEX REFERENCES

7 Preface This book on electrostatic discharge phenomena is essentially a translation and update ofa Swedish edition from The book is intended for people working with electronic circuits and equipments, in application and development. All personnel should be aware of the ESD-hazards, especially those responsible for quality. ESD-prevention is a part of TQM (Total Quality Management). The book is also usable for courses on the subject. Background It was soon realised that the MOS-circuits (MOS=Metal Oxide Semiconductor), which appeared in the beginning of the 1960-ties were sensitive to electrostatic discharges. But a severe accident accelerated the search for materials that do not generate electric charges. In April 1964 three people were working inside a satellite at Cape Kennedy Space Center. They suddenly screamed "we are burning". They died. The satellite incapsulation was covered with untreated plastics to protect against dust. When the plastics was pulled off both this and the metal incapsulating got charged. A discharge from the metal ignited inflammable parts of the satellite. Eleven more people were injured and the cost of the accident amounted to about 55 billions USD. A chemist, Dan Andersson, then at Allied Chemical, later at Richmond Technology, was charged by the defence authorities to develop a plastic, that does not generate electric charges. His method was to use a basic material, polyethene, incorporated with a conducting fluid, that migrates to the surface keeping this somewhat conducting independently of the surrounding humidity. That was the birth of what now is called antistatic materials. To separate this from ordinary plastics, it is given a pink colour and is also known on the market as "pink-poly". Plastics loaded with carbon (soot) to make it conducting had already been prepared and came now to an extended use. Another incident illustrates the danger of electrostatic discharge in daily life. A telephone operator got an inquiry, for which she needed her computer to answer. The screen was dusty and when talking in her phone she wiped it with a wet serviette. Suddenly she heard a strong crack in one ear and the phone connection was broken. She had got charged by the wiping. Analysis and simulation of the situation proved, that a discharge took place from an ear-ring through the electronic circuit of the phone to earth. She felt pain, got chocked and her hearingability was lowered temporarily!

8 VIn List of contents Electronics and electrical discharges generated by plastics. In 1968 an American firm manufactured film resistors of high precision to be exported to the German Space industry. The export was executed by an other firm in USA, that made the final inspections. The components were packed in closed cardboards. No failing parts had been discovered at the inspection. But for the components to be handled in clean-rooms they got repacked in clean polyethene bags! Arrival inspection in Germany revealed that out of 5000 items 190 resistance values were changed with as much as 6%, acceptable tolerance being 0.1 %! The wife of the chief engineer in the manufacturing company heard about this and exclaimed: "Surely it is due to that plastics". She was no scientist but had experienced that plastic bags and nylon clothes could cause violent discharges. The chief engineer then made experiments with the plastic bags and the components, rubbing the latter with a bag. Checking the resistance values afterwards showed change of them. Then the long struggle for protective materials started. Pink-poly got new applications as well as carbon loaded plastics, called "carbon black" in this context. Many new materials have been developed see, chapter 11. Acknowledgements I am much obliged to my coauthors of the Swedish edition, Mr Per EkIi.if of Celsius-Tech, Sweden, and Mr Anders Welander of the Defence Materials Administration, Sweden. Likewise prof. Viktor Scuka, High Voltage Laboratory at the university of Uppsala, Sweden, is recognised for his comments as well as prof. Niels Jonassen, the Technical university of Denmark for discussion on ionization problems. Many worthful experiences were gained from members of the US ESD Ass. and Swedish colleagues. Dr C. Duvvury and Mr L. Caliciotti of Texas Instruments (Dallas, USA and Avezzano, Italy) gave information on memory submicron technology. Mr M. Honda, Impulse Physics lab., Inc. Japan, is recognised for supplying valuable data on indirect ESD. I thank dr L.O. Eriksson, Institute of Applied Mathematics, Sweden and prof. E. Velrnre, dr B. Freydin, dr A. Udal, Technical University of Tallinn, Estonia for collaboration on ESDsimulations. A special thank is given to prof dr A. Birolini of ETH, Zurich, Switzerland for supporting this edition. Finally I will thank Springer Verlag, Heidelberg and Berlin, Germany, for the publication. SDR Scandinavian Data Resource AB, Taby, Sweden, made the PC performance of the book.

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